• 제목/요약/키워드: Device failure

검색결과 680건 처리시간 0.03초

Thyristor 소자의 스트레스에 따른 소자파괴 메커니즘 연구 (Investigation of the thyristor failure mechanism induced by stress)

  • 김형우;서길수;김상철;강인호;김남균;김은동
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.129-130
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    • 2005
  • The electrical stress has a major effect on the long-term reliability of the thyristor. Therefore, it is needed to analyze the relationship between reliability and stress. In this paper, we investigate the device failure mechanism which induced by the stress. And also investigate the effect of the thermal stress on the device failure and relationship between electrical and thermal stress. Two-dimensional process simulator ATHENA and device simulator ATLAS are used to analyze the failure mechanism of the device.

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A Technique for Analyzing LSI Failures Using Wafer-level Emission Analysis System

  • Higuchi, Yasuhisa;Kawaguchi, Yasumasa;Sakazume, Tatsumi
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제1권1호
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    • pp.15-19
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    • 2001
  • Current leakage is the major failure mode of semiconductor device characteristic failures. Conventionally, failures such as short circuit breaks and gate breakdowns have been analyzed and the detected causes have been reflected in the fabrication process. By using a wafer-level emission-leakage failure analysis method (in-line QC), we analyzed leakage mode failure, which is the major failure detected during the probe inspection process for LSIs, typically DRAMs and CMOS logic LSIs. We have thus developed a new technique that copes with the critical structural failures and random failures that directly affect probe yields.

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Windows System에서 Device Driver Failure로 인한 경제적인 피해 산출 모델 연구 (Study of Economic Damage Due to Windows Device Driver Failure)

  • 김성민
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2008년도 하계종합학술대회
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    • pp.1163-1164
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    • 2008
  • From the complexities and functional/operational expectations, the compositions of PC devices requires Device Drivers to deliver full performance of the Hardware. However, due to quick transition of hardwares and expectations of better performance of the system. As a rest users are exposed of unexpected failures of device drivers which will cause malfunction of the system which consequently cause damages in quantity as well as quality wise. In this paper, the method of calculation and/or forecast to unexpected failure will be suggested. It may not be the answer but can be a guide to calculation to economic damage due to device driver failure.

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Analysis of the Failure Stress in Pyrotechnically Releasable Mechanical Linking Device

  • Lee, Yeung-Jo;Kim, Dong-Jin;Kang, Won-Gyu
    • 한국추진공학회:학술대회논문집
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    • 한국추진공학회 2008년 영문 학술대회
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    • pp.813-822
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    • 2008
  • The present work has been developed the interpretation processor including analysis of the failure stress in pyrotechnically releasable mechanical linking device, which has the release characteristic without fragmentation and pyro-shock, using SoildWorks, COSMOS Works and ANSYS programs. The aim of the invention is to propose a pyrotechnically releasable mechanical linking device for two mechanical elements that does not suffer from such drawbacks. The pyrotechnically releasable mechanical linking device according to the invention is simple, compact and inexpensive in structure. It is simple to implement and permit the use of only a reduced quantity of pyrotechnic composition, such composition possibly being devoid of any primary explosive at all. The present work is only focused on the design of structure and the material characteristics. To analyze the fracture morphology resulted from tensile test in the different ball type bolts, the present work has been performed to estimate the failure stress of material and to make the same result from tensile test. The failure stress of SUS 630 in ductile material is approximately 1050 Mpa. The failure stress of SUS 420 in brittle material is about 1790 Mpa. Among the models used the ductile material, the model 6 is suitable a design of structure compared to that of other models. The use of this interpretation processor developed the present work could be extensively helped to estimate the failure stress of material having a complex geometry such as the ball type bolt

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종합병원 진단용방사선장비의 고장유형 분석 (Studies on Failure Kind Analysis of the Radiologic Medical Equipment in General Hospital)

  • 이우철;김정래
    • 대한방사선기술학회지:방사선기술과학
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    • 제22권2호
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    • pp.33-39
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    • 1999
  • This paper included a data analysis of the unit of medical devices using mainternance recording card that had medical devices of unit failure mode, hospital of failure mode and MTBF. The results of the analysis were as follows : 1. Medical devices of unit failure mode was the highest in QC/PM such A hospital as 33.9%, B hospital 30.9%, C hospital 30.3%, second degree was the Electrical and Electronic failure such A hospital as 23.5%, B hospital 25.3%, C hospital 28%, third degree was mechanical failure such A hospital as 19.5%, B hospital 22.5%, C hospital 25.4%. 2. Hospital of failure mode was the highest in Mobile X-ray device(A hospital 62.5%, B hospital 69.5%, C hospital 37.4%), and was the lowest in Sono devices(A hospital 16.76%, B hospital 8.4%, C hospital 7%). 3. Mean time between failures(MTBT) was the highest in SONO devices and was the lowest in Mobile X-ray devices which have 200 - 400 failure hours. 4. Anverage failure ratio was the highest in Mobile X-ray devices(A hospital 31.3%, B hospital 34.8%, C hospital 18.7%), and was the lowest in Sono(Ultrasound) devices (A hospital 8.4%, B hospital 4.2%, C hospital 3.5%). 5. Failure ratio results of medical devices according to QC/PM part of unit failure mode were as follows ; A hospital was the highest part of QC/PM (50%) in Mamo X-ray device and was the lowest part of QC/PM(26.4%) in Castro X-ray. B hospital was the highest part of QC/PM(56%) in Mobile X-ray device, and the lowest part of QC/PM(12%) in Gastro X-ray. C hospital was the highest part of QC/PM(60%) in R/F X-ray device, and the lowest a part of QC/PM(21%) in Universal X-ray. It was found that the units responsible for most failure decreased by systematic management. We made the preventive maintenance schedule focusing on adjustement of operating and dust removal.

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T300/924C 탄소섬유/에폭시 복합재 적층판의 이차원 압축 강도의 크기효과 및 좌굴방지장치의 영향 (Two Dimensional Size Effect on the Compressive Strength of T300/924C Carbon/Epoxy Composite Plates Considering Influence of an Anti-buckling Device)

  • 공창덕;방조혁;이정환
    • 한국복합재료학회:학술대회논문집
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    • 한국복합재료학회 2002년도 추계학술발표대회 논문집
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    • pp.88-91
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    • 2002
  • The two dimensional size effect of specimen gauge section (length x width) was investigated on the compressive behavior of a T300/924 [45/-45/0/90]3s, carbon fiber-epoxy laminate. A modified ICSTM compression test fixture was used together with an anti-buckling device to test 3mm thick specimens with a 30$\times$30, 50$\times$50, 70$\times$70, and 90mm$\times$90mm gauge length by width section. In all cases failure was sudden and occurred mainly within the gauge length. Post failure examination suggests that $0^{\circ}$ fiber microbuckling is the critical damage mechanism that causes final failure. This is the matrix dominated failure mode and its triggering depends very much on initial fiber waviness. It is suggested that manufacturing process and quality may play a significant role in determining the compressive strength. When the anti-buckling device was used on specimens, it was showed that the compressive strength with the device was slightly greater than that without the device due to surface friction between the specimen and the device by pretoque in bolts of the device. In the analysis result on influence of the anti-buckling device using the finite element method, it was found that the compressive strength with the anti-buckling device by loaded bolts was about 7% higher than actual compressive strength. Additionally, compressive tests on specimen with an open hole were performed. The local stress concentration arising from the hole dominates the strength of the laminate rather than the stresses in the bulk of the material. It is observed that the remote failure stress decreases with increasing hole size and specimen width but is generally well above the value one might predict from the elastic stress concentration factor. This suggests that the material is not ideally brittle and some stress relief occurs around the hole. X-ray radiography reveals that damage in the form of fiber microbuckling and delamination initiates at the edge of the hole at approximately 80% of the failure load and extends stably under increasing load before becoming unstable at a critical length of 2-3mm (depends on specimen geometry). This damage growth and failure are analysed by a linear cohesive zone model. Using the independently measured laminate parameters of unnotched compressive strength and in-plane fracture toughness the model predicts successfully the notched strength as a function of hole size and width.

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심실의 부하감소 측면에서 좌심실 보조장치의 최적 치료시기 예측을 위한 시뮬레이션 연구 (Prediction of Pumping Efficacy of Left Ventricular Assist Device according to the Severity of Heart Failure: Simulation Study)

  • 김은혜;임기무
    • 한국기계가공학회지
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    • 제12권4호
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    • pp.22-28
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    • 2013
  • It is important to begin left ventricular assist device (LVAD) treatment at appropriate time for heart failure patients who expect cardiac recovery after the therapy. In order to predict the optimal timing of LVAD implantation, we predicted pumping efficacy of LVAD according to the severity of heart failure theoretically. We used LVAD-implanted cardiovascular system model which consist of 8 Windkessel compartments for the simulation study. The time-varying compliance theory was used to simulate ventricular pumping function in the model. The ventricular systolic dysfunction was implemented by increasing the end-systolic ventricular compliance. Using the mathematical model, we predicted cardiac responses such as left ventricular peak pressure, cardiac output, ejection fraction, and stroke work according to the severity of ventricular systolic dysfunction under the treatments of continuous and pulsatile LVAD. Left ventricular peak pressure, which indicates the ventricular loading condition, decreased maximally at the 1st level heart-failure under pulsatile LVAD therapy and 2nd level heart-failure under continuous LVAD therapy. We conclude that optimal timing for pulsatile LVAD treatment is 1st level heart-failure and for continuous LVAD treatment is 2nd level heart-failure when considering LVAD treatment as "bridge to recovery".

마이크로 디스플레이 디바이스의 가속수명시험에 관한 연구 (The Study of Accelerated Life Test for Micro Display Device)

  • 차상목;윤성록;조여욱
    • 한국신뢰성학회지:신뢰성응용연구
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    • 제2권1호
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    • pp.15-22
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    • 2002
  • This paper is concerned about an Accelerated Life Test for Micro Display Device which is being used in a Projection TV, in order to find a failure mode occurred in field in a short time, to identify a major factor to affect a life, and to estimate a mean life. For this purpose, we selected a temperature as a accelerated factor to perform a test and measured degradation of display device using visual inspection and chromaticity table. In the result of Accelerated Life Test, it is confirmed that failure mode is equal to the degradation of display device by vendor and the Temperature is a major factor to affect a failure. Besides, according as the display device is turned to green as degraded, it is identified that the change of the chromaticity value is one method to measure the degree of the degradation . So, we applied the optimal condition, which consider a cost and life to lower the Temperature which is a major factor acquired by the result of ALT, to PTV design

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Temporary Right Ventricular Assist Device Insertion via Left Thoracotomy after Left Ventricular Assist Device Implantation

  • Park, Ilkun;Cho, Yang Hyun;Chung, Su Ryeun;Jeong, Dong Seop;Sung, Kiick;Kim, Wook Sung;Lee, Young Tak
    • Journal of Chest Surgery
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    • 제52권2호
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    • pp.105-108
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    • 2019
  • Right heart failure is a relatively common complication after left ventricular assist device (LVAD) implantation. Severe right heart failure can be managed by temporary right ventricular assist device (RVAD) implantation. However, trans-sternal RVAD insertion requires a subsequent third sternotomy for cannula removal. Herein, we present a case of RVAD insertion via a left anterior mini-thoracotomy after LVAD implantation in a patient with alcohol-induced cardiomyopathy.

RF 고전력 스트레스에 의한 SAW Device의 고장메카니즘 분석 (Failure Mechanism Analysis of SAW Device under RF High Power Stress)

  • 김영구;김태홍
    • 한국인터넷방송통신학회논문지
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    • 제14권5호
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    • pp.215-221
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    • 2014
  • 본 논문에서는 RF 고전력 스트레스에 의한 SAW 디바이스의 신뢰성 분석을 위하여 향상된 내전력 시험시스템 및 시험방법을 제안하고 고장분석을 통해 고장메카니즘을 분석하였다. 광학현미경, SEM(Scanning Electron Microscope) 및 EDX(Energy Dispersive X-ray Spectro-scopy)장비를 이용하여 고장 분석한 결과, SAW 디바이스의 고장메카니즘은 고전류 밀도 및 고온 조건에서 줄열에 의한 Electromigration으로 분석하였다. Electromigration은 IDT전극에 void와 hillock을 생성하고, 그 결과로 전극이 단락과 단선되어 삽입손실이 증가하는 것이다. 제안된 내전력 시험시스템과 방법을 이용하여 450MHz CDMA용 SAW 필터의 가속수명시험을 수행하고, 아이링 모델과 와이블 분포를 이용하여 SAW 필터의 $B_{10}$수명은 98,500시간으로 추정하였다.