• 제목/요약/키워드: Device fabrication

검색결과 1,417건 처리시간 0.039초

Fabrication of OTFT-backplane with solution process for Electrophoretic Display panel

  • Lee, Myung-Won;Lee, Mi-Young;Park, Jong-Seung;Song, Chung-Kun
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.428-430
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    • 2009
  • We fabricated flexible OTFT-backplanes with combining printing technique and conventional photolithography process for the electrophoretic display(EPD). The active area size of backplane was 6" in diagonal direction and consisted of $192{\times}150$ pixels, containing 1 OTFT employed bottom contact structure and 1 capacitance in each pixel.

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경사 LIGA 공정을 이용한 미세 바늘 어레이의 제작 (Fabrication of Microneedle Array Using Inclined LIGA Process)

  • 문상준;이승섭
    • 대한기계학회논문집A
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    • 제28권12호
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    • pp.1871-1876
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    • 2004
  • We demonstrate a novel fabrication technology for the microneedle array that can be used in the medical test field, which is transdermal drug delivery and blood analyte sampling. Previous researchers have used silicon-processed micromachining, a reactive ion etching, and molding techniques for the fabrication of microneedle array. However, these fabrication techniques have somewhat limitations apply to the microneedle array fabrication according to its application. Inclined LIGA process is suggested to overcome these problems. This process provides easier, sharper and longer out-of-plane microneedle array structure than conventional silicon-processed fabrication method did. Additionally, because of the advantage of the LIGA process based on mold fabrication for mass production, the polymer, PMMA(PolyMethylMethAcrylate), based microneedle array is useful as the mold base of nickel electroplating process; on the other hand, silicon-processed microneedle array is used in itself. In this research, we fabricate different types of out-of-plane microneedle array, which have different shape of tip, base and hole structure, using the inclined LIGA process. The fabricated microneedles have proper mechanical strength, height and sharpness to puncture human hand epidermis or dermis with less pain and without needle tip break during penetrating the skin.

미세접촉프린팅 공정을 이용한 유연성 유기박막소자(OTFT)설계 및 제작 (Design and Fabrication of Flexible OTFTs by using Nanocantact Printing Process)

  • 조정대;김광영;이응숙;최병오
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2005년도 추계학술대회 논문집
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    • pp.506-508
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    • 2005
  • In general, organic TFTs are comprised of four components: gate electrode, gate dielectric, organic active semiconductor layer, and source and drain contacts. The TFT current, in turn, is typically determined by channel length and width, carrier field effect mobility, gate dielectric thickness and permittivity, contact resistance, and biasing conditions. More recently, a number of techniques and processes have been introduced to the fabrication of OTFT circuits and displays that aim specifically at reduced fabrication cost. These include microcontact printing for the patterning of metals and dielectrics, the use of photochemically patterned insulating and conducting films, and inkjet printing for the selective deposition of contacts and interconnect pattern. In the fabrication of organic TFTs, microcontact printing has been used to pattern gate electrodes, gate dielectrics, and source and drain contacts with sufficient yield to allow the fabrication of transistors. We were fabricated a pentacene OTFTs on flexible PEN film. Au/Cr was used for the gate electrode, parylene-c was deposited as the gate dielectric, and Au/Cr was chosen for the source and drain contacts; were all deposited by ion-beam sputtering and patterned by microcontact printing and lift-off process. Prior to the deposition of the organic active layer, the gate dielectric surface was treated with octadecyltrichlorosilane(OTS) from the vapor phase. To complete the device, pentacene was deposited by thermal evaporation and patterned using a parylene-c layer. The device was shown that the carrier field effect mobility, the threshold voltage, the subthreshold slope, and the on/off current ratio were improved.

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Nb SQUID가 탑재된 초고감도 캔티레버 제작 (Fabrication of Nb SQUID on an Ultra-sensitive Cantilever)

  • 김윤원;이순걸;최재혁
    • Progress in Superconductivity
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    • 제11권1호
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    • pp.36-41
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    • 2009
  • Superconducting quantum phenomena are getting attention from the field of metrology area. Following its first successful application of Josephson effect to voltage standard, piconewton force standard was suggested as a candidate for the next application of superconducting quantum effects in metrology. It is predicted that a micron-sized superconducting Nb ring in a strong magnetic field gradient generates a quantized force of the order of sub-piconewtons. In this work, we studied the design and fabrication of Nb superconducting quantum interference device (SQUID) on an ultra-thin silicon cantilever. The Nb SQUID and electrodes were structured on a silicon-on-insulator (SOI) wafer by dc magnetron sputtering and lift-off lithography. Using the resulting SOI wafer, we fabricated V-shaped and parallel-beam cantilevers, each with a $30-{\mu}m$-wide paddle; the length, width, and thickness of each cantilever arm were typically $440{\mu}m,\;4.5{\mu}m$, and $0.34{\mu}m$, respectively. However, the cantilevers underwent bending, a technical difficulty commonly encountered during the fabrication of electrical circuits on ultra-soft mechanical substrates. In order to circumvent this difficulty, we controlled the Ar pressure during Nb sputtering to minimize the intrinsic stress in the Nb film and studied the effect of residual stress on the resultant device.

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3차원 그래픽 설계와 3D 프린팅에 의한 보조기 쾌속조형 제작 방법 연구 (3D printing-based Fabrication of Orthotic Devices Using 3D Computer-Aided Design and Rapid Prototyping)

  • 최봉근;허서윤;손경태;이신영;나대영;이근민
    • 재활복지공학회논문지
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    • 제9권2호
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    • pp.145-151
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    • 2015
  • 본 연구에서는 3D 스캐닝에서 획득한 이미지 정보를 바탕으로 3차원 그래픽 제품설계와 3D 프린팅 기술을 적용한 보조기 제작방법을 제시하였다. 뇌성마비 환자를 대상으로 4가지 종류의 보조기를 기존의 수작업이 아닌 전산화된 작업 기술을 적용하여 제작해봄으로써 방법과 절차에 대한 기준을 마련하고, 이 기술이 임상적으로 사용 가능한지 여부에 대해 확인했다. 보조기 사용 시 환자만족도와 보조기 제작시간, 인장강도 등의 비교를 통하여 정량적, 정성적으로 제작방법의 적용 가능성을 검증한 결과 기존의 열가소성 수지가 표출했던 문제를 보완하고 대체가능한 방법이 될 가능성이 있음을 확인하였다.

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PLC-기반의 마흐-젠더 간섭계 센서 제작 및 특성 평가 (Fabrication and Characterization of PLC-based Mach-Zehnder Interferometer Sensor)

  • 김준형;양회영;이현용
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.390-390
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    • 2008
  • In this paper, we have designed and fabricated optical waveguides based on the Mach-Zehnder Interferometer (MZI) for application to sensor. The evanecent-wave sensor based on the MZI principle has sufficiently high sensitivity to measure the change of the refractive index on surface of a waveguide. The waveguides were optimized at a wavelength of 1550 nm and fabricated according to the design rule of 0.45 delta%, which is the difference of refractive index between the core and clad. The fabrication of MZI optical waveguides was performed by a conventional Planar Lightwave Circuit (PLC) fabrication process. The fabricated MZI optical waveguide device was measured. According to the measurement result, the insertion loss of MZI optical waveguide device was below 3.5 dB and the polarization dependent loss (PDL) was within 0.1dB. In addition, we analyzed optical properties of MZI sensor according to the refractive index change of the sensor arm.

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산화 그래핀을 절연층으로 사용한 유연한 ReRAM과 다층 절연층 ReRAM의 제작 방법 및 결과 비교 (A Review: Comparison of Fabrication and Characteristics of Flexible ReRAM and Multi-Insulating Graphene Oxide Layer ReRAM)

  • 김동균;김태헌;윤태환;박정호
    • 전기학회논문지
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    • 제65권8호
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    • pp.1369-1375
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    • 2016
  • A rapid progress of the next-generation non-volatile memory device has been made in recent years. Metal/insulator/Metal multi-layer structure resistive RAM(ReRAM) has attracted a great deal of attention because it has advantages of simple fabrication, low cost, low power consumption, and low operating voltage. This paper describes the working principle of the ReRAM device, a review of fabrication techniques, and characteristics of flexible ReRAM devices using graphene oxide as an insulating layer and ReRAM devices using multi-layered insulator. The switching characteristics of the above ReRAM devices have been compared. The oxidized graphene could be employed as an insulator of next generation ReRAM devices.

고압 중수소 열처리에 의한 MOSFETs의 특성 개선에 대한 연구 (Improvement of Electrical Characteristics of MOSFETs Using High Pressure Deuterium Annealing)

  • 정대한;구자윤;왕동현;손영서;박준영
    • 한국전기전자재료학회논문지
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    • 제35권3호
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    • pp.264-268
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    • 2022
  • High pressure deuterium (HPD) annealing is an advancing technology for the fabrication of modern semiconductor devices. In this work, gate-enclosed FETs are fabricated on a silicon substrate as test vehicles. After a cycle for the HPD annealing, the device parameters such as threshold voltage (VTH), subthreshold swing (SS), on-state current (ION), off-state current (IOFF), and gate leakage (IG) were measured and compared depending on the HPD. The HPD annealing can passivate the dangling bonds at Si-SiO2 interfaces as well as eliminate the bulk trap in SiO2. It can be concluded that adding the HPD annealing as a fabrication process is very effective in improving device reliability, performance, and variability.

Rosen type 변압기 응용을 위한 PNN-PMN-PZT 세라믹스의 전기적 특성 (Electrical Properties of PNN-PMN-PZT ceramics for Rosen Type Transformer Applications)

  • 주현규;김인성;송재성;김민수;정순종;이대수
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 제39회 하계학술대회
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    • pp.1244-1245
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    • 2008
  • Recently, piezoelectric transformer is applied to wide fields. Multi layer piezoelectric transformer has the advantage of high step up ratio, electromechanical coupling coefficient(Kp) and mechanical quality factor(Qm), but is indicated of peeling-phenomenon of electrode, rising sintering temperature made price of costly electrode. So in this study, it discuss on method for fabrication of rosen type piezoelectric transformers. For the fabrication as rosen type piezoelectric transformers, synthesized the powder using 0.01Pb$(ni_{1/3}Nb_{2/3})O_3$ - 0.08Pb$(Mn_{1/3}Nb_{2/3})O_3$ - 0.91Pb$(Zr_{0506}Ti_{0496})O_3$ (abbreviated as PNN-PMN-PZT) ceramics. The density, microstructure, dielectric and piezoelectric properties as a function of sintering temperature were investigated. The results indicated that the optimized properties of ceramics were obtained at sintering temperature of 1200$^{\circ}C$, showed the value of $d_{33}$=273pC/N, $K_p$=0.60 $Q_m$=1585, ${\varepsilon}_r$=1454, density=7.917$g/cm^3$ and $tan{\delta}$=0.0064.

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