• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.6
• /
• pp.458-464
• /
• 1998

This paper gives characterization of substrate and PZT(53/47) thin film deposited by metalorganic decomposition, which is concerned in deposition process and device fabrication process, to fabricate micro electro mechanical system (MEMS) device with piezoelectric material. The PZT thin films deposited by MOD at 700^{\circ}C$ for 30 minutes had a polycrystallinity, that is, no substrate dependence, while different interface were developed depending on the bottom electrodes. Such a structural variation could influence on not only the properties of the PZT film but also etching process for fabricating MEMS devices. Therefore the electrode structure is a very important factor in the deposition of the PZT film during etching process by HF acid for MEMS device with piezoelectric material. Piezoelectric coefficients of the PZT films on the different substrates were 40 and 80 pm/V at an applied voltage of 4V. Based in these results, it was possible for deposition of the PZT film by MOD to apply MEMS device fabrication process based on piezoelectricity after selection of proper bottom electrode.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2011.05a
• /
• pp.66.2-66.2
• /
• 2011

A polymer-based multi-walled carbon nanotube (MWCNT) field emission device was fabricated from a composite dispersion of MWCNTs and waterborne polymethyl methacrylate (PMMA). The waterborne PMMA synthesized through the emulsion polymerization method was added to minimize the reagglomeration of dispersed MWCNTs with surfactants in water, and increase the adhesion between the and the substrate. The field emission properties of the fabricated device were optimized by adjusting the density of the emitter and the adhesion between the MWCNTs and the substrate. These were done by controlling the polymer concentration added to the MWCNT dispersion, as well as the amount of spray coating on the substrate. The results confirm the successful fabrication of a polymer-based MWCNT field emission device with a low field of 1.07 $V/{\mu}m$ and a good electric field enhancement factor of 2445. The device was fabricated by adding 0.8 mg/mL of polymer solution to the MWCNT dispersion and applying 20 cycles of spray coating. Application of this same MWCNT/polymer composite solution to a flexible polymer substrate also resulted in the successful fabrication of an electric field emission device with uniform emission and long time stability.

• 제어로봇시스템학회:학술대회논문집
• /
• 2005.06a
• /
• pp.2175-2178
• /
• 2005

Selective Laser Sintering(SLS) method is one of Rapid Prototyping(RP) technologies. It has been used to fabricate desirable part to sinter powder and stack the fabricated layer. Since the sintering process occurs using infrared laser having high thermal energy, shrinkage and curling of the fabricated part occurs according to thermal distribution. Therefore, the fast scanning path generation is necessary to eliminate the factors of quality deterioration. In case of fabricating larger size parts, the unique scanning device and scanning path generation should be considered. In this paper, the development of SLS machines being capable of large size fabrication(800${\times}$1000${\times}$800 mm, W${\times}$D${\times}$H) will be addressed. The dual laser system and the unique scanning device have been designed and built, which employ CO2 lasers and dynamic 3-axis scanners. The developed system allows scanning a larger planar surface with the desired laser spot size. Also, to generate the fast scanning paths, adaptive path generation is needed with respect to the shape of each layer, and not simply x, y scanning, but the scanning of arbitrary direction should be enabled. To evaluate the suggested method, the complex part will be used for the experiment fabrication.

• Korean Journal of Optics and Photonics
• /
• v.10 no.4
• /
• pp.342-347
• /
• 1999

As the waveguide width and the radius of curvature get smaller for the effort of monolithic fabrication of integrated photonic devices, the waveguide characteristics change significantly according to the change of the waveguide width or the radius of curvature. Especially, variation of the waveguide width due to fabrication process errors induces a phase error for each waveguide from the change of the propagation constant. Therefore, it is important to quantify these variation effects on the device characteristics for the design and fabrication of highly integrated photonic devices. Here, we analyze four different types of waveguides to get general characteristics in propagation constant change by utilizing the effective index method and the analytic solution method. Futhermore, the output characteristics of two AWG(Arrayed Waveguide Grating) devices are simulated by a highly-functional computer code. The simulated results have been found to be similar to the realistic device characteristics. The required fabrication error limit for the ridge-type InP-AWG device should be smaller than 0.02 ${\mu}{\textrm}{m}$ to get better channel crosstalk than-25 dB, while the required fabrication error limit for rib-type silica-AWG devices may be allowed up to 0.1 ${\mu}{\textrm}{m}$ to obtain better crosstalk than -30 dB.

• Transactions on Electrical and Electronic Materials
• /
• v.7 no.4
• /
• pp.184-188
• /
• 2006

This work describes efforts in the fabrication and testing of robust microelectromechanical systems (MEMS). Robustness is typically achieved by investigating non-silicon substrates and materials for MEMS fabrication. Some of the traditional MEMS fabrication techniques are applicable to robust MEMS, while other techniques are drawn from other technology areas, such as electronic packaging. The fabrication technologies appropriate for robust MEMS are illustrated through laminated polymer membrane based pressure sensor arrays. Each array uses a stainless steel substrate, a laminated polymer film as a suspended movable plate, and a fixed, surface micromachined back electrode of electroplated nickel. Over an applied pressure range from 0 to 34 kPa, the net capacitance change was approximately 0.14 pF. An important attribute of this design is that only the steel substrate and the pressure sensor inlet is exposed to the flow; i.e., the sensor is self-packaged.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2007.11a
• /
• pp.477-478
• /
• 2007

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2007.11a
• /
• pp.26.1-26.1
• /
• 2007

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2010.11a
• /
• pp.399-400
• /
• 2010

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1994.11a
• /
• pp.94-95
• /
• 1994

• The Journal of Korean Society for Radiation Therapy
• /
• v.9 no.1
• /
• pp.8-12
• /
• 1997