• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.519-522
• /
• 2002

In this paper, we analyze the impact of plasma etching process induced device degradation on low temperature poly-Si TFTs. The results indicate the relationship between device degradation and PPID effect during plasma fabrication. The dual-gate structure, which is used to suppress leakage current, is also discussed in this research.

• Journal of Information Display
• /
• v.5 no.2
• /
• pp.14-18
• /
• 2004

The most significant degradation problem of PLED has been described and new buffer layer material aimed for use as HTL in PLED to solve this issue has been studied. This approach has enabled the increase of the green device efficiency (${\sim}$2x) and lifetime (${\sim}$5-6x).

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.49 no.1
• /
• pp.8-14
• /
• 2012

The device performances of n-channel MuGFET with different fin numbers and fin widths but the total effective channel width is constant have been characterized. Two kinds of Pi-gate devices with fin number=16, fin width=55nm, and fin number=14, fin width=80nm have been used in characterization. The threshold voltage, effective electron mobility, threshold voltage roll-off, inverse subthreshold slope, PBTI, hot carrier degradation, and drain breakdown voltage have been characterized. From the measured results, the short channel effects have been reduced for narrow fin width and large fin numbers. PBTI degradation was more significant in devices with large fin number and narrow fin width but hot carrier degradation was similar for both devices. The drain breakdown voltage was higher for devices with narrow fin width and large fin numbers. With considering the short channel effects and device degradation, the devices with narrow fin width and large fin numbers are desirable in the device layout of MuGFETs.

• Journal of Industrial and Engineering Chemistry
• /
• v.68
• /
• pp.350-354
• /
• 2018

Lifetime study of blue phosphorescent and thermally activated delayed fluorescent organic light-emitting diodes was carried out to understand the dominant degradation process during electrical operation of the devices. Doping concentration dependence of the phosphorescent and thermally activated delayed fluorescent organic light-emitting diodes was studied, which demonstrated long lifetime at low doping concentration in the phosphorescent devices and at high doping concentration in the thermally activated delayed fluorescent devices. Detailed mechanism study of the two devices described that triplet-triplet annihilation is the main degradation process of phosphorescent organic light-emitting diodes, whereas triplet-polaron annihilation is the key degradation factor of the thermally activated delayed fluorescent devices.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.10
• /
• pp.60-66
• /
• 1998

The hot carrier induced performance degradation of 0.8${\mu}{\textrm}{m}$ RF NMOSFET has been investigated within the general framework of the degradation mechanism. The device degradation model of an unit finger gate MOSFET could be applied for the device degradation of the multi finger gate RF NMOSFET. The reduction of cut-off frequency and maximum frequency can be explained by the transconductance reduction and the drain output conductance increase, which are due to the interface state generation after the hot carrier stressing. From the correlation between hot carrier induced DC and RF performance degradation, we can predict the RF performance degradation just by the DC performance degradation measurement.

• ETRI Journal
• /
• v.27 no.5
• /
• pp.628-634
• /
• 2005

From AC analysis results utilizing a 2-dimensional device simulator, we extracted an AC-equivalent circuit of a grounded-gate NMOS (ggNMOS) electrostatic discharge (ESD) protection device. The extracted equivalent circuit is utilized to analyze the effects of the parasitics in a ggNMOS protection device on the characteristics of a low noise amplifier (LNA). We have shown that the effects of the parasitics can appear exaggerated for an impedance matching aspect and that the noise contribution of the parasitic resistances cannot be counted if the ggNMOS protection device is modeled by a single capacitor, as in prior publications. We have confirmed that the major changes in the characteristics of an LNA when connecting an NMOS protection device at the input are reduction of the power gain and degradation of the noise performance. We have also shown that the performance degradation worsens as the substrate resistance is reduced, which could not be detected if a single capacitor model is used.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.30A no.9
• /
• pp.38-45
• /
• 1993

In this study, the degradation characteristics of drain output resis-tance was described due to hot electron effects. An semi-empirical model for the degraded drain output resistance was derived from the measured device characteristics. The suggested model was verified from the measured data and the device parameter dependence was also analyzed. The degradation of drain output resistance was increased with stress time and had linear relationship with the degradation of drain current. The device lifetime which was defined by failure criteria of drain output resistance (such as $\Delta$ro/roo=5%) was equivalent to that of failure criteria of drain current (such as $\Delta$ID/ID=5%)

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.51 no.9
• /
• pp.443-448
• /
• 2002

The degradation characteristics of R, G, B phosphor layers in AC-PDP, which is due to the discharge of plasma, are still unknown. For the successful commercialization of AC-PDP, the degradation of phosphor layers, caused by the plasma discharge must be investigated and improved. In this paper, the degradation properties of phosphor layers in AC-$PDP_S$ are investigated. It takes long time to investigate the degradation in real condition, so that the device for accelerating the degradation is devised. To prove the performance of the device, the visible emission characteristics of phosphor layers and discharge with the environmental temperature are examined. As a result, it is shown that the phosphor layers are easily degraded when the discharge is sustained under high environmental temperature condition. After accelerating the degradation of blue Phosphor layer((Ba,Eu)Mg$AI_10$$O_17$) for 48 hours, its luminance decreases about 38 % and the corresponding color purity deteriorates severely.

• Korean Journal of Materials Research
• /
• v.28 no.1
• /
• pp.18-23
• /
• 2018

To study the impedance characteristics of a fluorescent OLED according to the device structure, we fabricated Device 1 using ITO / NPB / $Alq_3$ / Liq / Al, Device 2 using ITO / 2-TNATA / NPB / $Alq_3$ / Liq / Al, and Device 3 using ITO / 2-TNATA / NPB / SH-1:BD / $Alq_3$ / Liq / Al. The current density and luminance decreased with an increasing number of layers of the organic thin films in the order of Device 1, 2, 3, whereas the current efficiency increased. From the Cole-Cole plot at a driving voltage of 6 V, the maximum impedance values of Devices 1, 2, and 3 were respectively 51, 108, and $160{\Omega}$ just after device fabrication. An increase in the impedance maximum value is a phenomenon caused by the charge mobility and the resistance between interfaces. With the elapse of time after the device fabrication, the shape of the Cole-Cole plot changed to a form similar to 0 or a lower voltage due to the degradation of the device. As a result, we were able to see that an impedance change in an OLED reflects the characteristics of the degradation and the layer.

• Progress in Superconductivity and Cryogenics
• /
• v.7 no.2
• /
• pp.11-15
• /
• 2005

The I$_{c}$ degradation behavior of Bi-2223 tapes bent at RT and 77K were investigated using the bending device invented by Goldacker. Test results on fixing the tape at RT and 17K showed no difference. At 17K and RT bending, the critical strain was 0.67 and 0.50$\%$, respectively, for the VAM-l tape. For the AMSC tape, it was 0.94 and 0.88$\%$, respectively. These results show that there is additional residual stress in the superconducting filaments to be bent at 17K which shifts the formation of cracks into smaller bending radii. This was proved by computational analysis based on the mixture rule of composites. For the VAM-l tape, the Ie degradation behavior using the Goldacker type device shifted to higher strain levels at about 0.5$\%$, as compared with the FRP sample holders which have a critical bending strain of about 0.24$\%$. Also, for the externally reinforced AMSC tape, Ie degradation using the Goldacker type device begins at a higher strain level, at 0.88$\%$ as compared with using FRP sample holders, at 0.74$\%$. The difference between both cases can be explained by the tensile' and thermal stresses that the tapes were subjected to during fixing (soldering) when the FRP sample holders were used.