• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1324-1326
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• 1998

To drive motor or heating machine, it needs the electric power system like the apparatus of inverter. This electric power system obviously comprises power switching devices and drivers to run them. And this system has the topology comprised one/many arm(s), - each arm has high side switching device and low side switching device. Transformer, photocoupler, and HVIC having functions of isolation and level shift which are important thing to drive high side switching device are used as component of drivers in conventional apparatus. Piezoelectric transformers are proposed in this paper, and applied to drive high side swiching device. Through experiments, the possiblities of driving high side switching device are presented and the problems are mooted concurrently. But, we also consider a counterplan for solving the mooted trouble issues.

• Proceedings of the KIEE Conference
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• 1998.07g
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• pp.2458-2460
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• 1998

To drive motor or heating machine, it needs the electric power system like the apparatus of inverter. This electric power system obviously comprises power switching devices and drivers to run them. And this system has the topology comprised one/many arm(s), - each arm has high side switching device and low side switching device. Transformer, photocoupler, and HVIC having functions of isolation and level shift which are important thing to drive high side switching device are used as component of drivers in conventional apparatus. Piezoelectric transformers are proposed in this paper, and applied to drive high side swiching device. Through experiments, the possiblities of driving high side switching device are presented and the problems are mooted concurrently. But, we also consider a counterplan for solving the mooted trouble issues.

• Proceedings of the KIPE Conference
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• 2002.11a
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• pp.227-230
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• 2002

The switching device in an inductive circuit is stressed by the over-voltage at the turn-off time. Thus if the peak value of the over-voltage is not properly limited, the switching device may be broken. Therefore, the snubber circuit should be added to protect the switching device from the over-voltage. The circuit designer must be familiar with the design of the snubber This paper tests the possibility that TVS instead of the conventional snubber can be applied to the protection circuit of the switching device without using the complicated design equations, and shows that the rating of TVS can be easily selected by considering only several parameters of TVS. The experimental results show the reduced switching voltage of the switching device at the turn-off time.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.403-404
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• 2012

We fabricated TFT devices with the GeSe channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is high. Based on the experiments, we draw the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.280-281
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• 2011

We fabricated the devices of TFT type with the amorphous chalcogenide channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is about 4 order. Based on the experiments, we contained the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.1
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• pp.94-100
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• 1988

To improve the switching time of active optical bistable devices, we propose an active optical bistable device that consists of a diode laser, a transistor, and a photodetector. By implementing the proposed device we realize the optical bistable device with a 5 nanosecond switching time. This is the fastest switching time among the hybrid type optical bistable devices. It is also experimentally demonstrated that the proposed device may be used in an optical disc pick up.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.368.1-368.1
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• 2014

We proposed amorphous GeSe-based ReRAM device of metal-insulator-metal (M-I-M) structure. The operation characteristics of memory device occured unipolar switching characteristics. By introducing the concepts of valance-alternation-pairs (VAPs) and chalcogen vacancies, the unipolar resistive switching operation had been explained. In addition, the current transport behavior were analyzed with space charge effect of VAPs, Schottky emission in metal/GeSe interface and P-F emission by GeSe bulk trap in mind. The GeSe ReRAM device of M-I-M structure indicated the stable memory switching characteristics. Furthermore, excellent stability, endurance and retention characteristics were also verified.

• Electronics and Telecommunications Trends
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• v.36 no.3
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• pp.34-40
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• 2021

For developing a switching device of a new concept that cannot be implemented with a semiconductor device, we introduce the Mott insulator-metal transition (IMT) phenomenon occurring out of the semiconductor regime, such as the temperature-driven IMT, the electric-field or voltage-driven IMT, the negative differential resistance (NDR)-IMT switching generated at constant current, and the NDR-based IMT-oscillation. Moreover, the possibilities of new concept IMT switching devices are briefly explained.

• The Transactions of the Korean Institute of Power Electronics
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• v.23 no.4
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• pp.294-297
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• 2018

This paper analyzes the losses of the switching device for a full bridge inverter connected to the grid. As the development of power conversion system, losses are dominant factors in judging the efficiency of a system. The losses of a switching device can be divided into switching loss and conduction loss, both of which can be estimated by analyzing periodic switching waveform. The switching loss is generated when the switch is turned on and off, while the conduction loss is generated when the switch is turned on. The estimated losses of the MOSFET switch are compared with the simulation results.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.384-384
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• 2012

PRAM switching device by using current pulse modulation was investigated to verify its possibility for 3D architecture. In this work, two phase change materials connected in series having a different crystallization temperature are used. Its structural for different phase change material was evaluated by electrical resistance. We confirmed that Germanium-Antimony-Tellurium (GST) alloy and Germanium- Copper-Tellurium (GCT) alloy material were selected according to crystallization temperature, ${\sim}180^{\circ}C$ for switching and ${\sim}240^{\circ}C$ for memory devices, respectively. From this research, it is expected that phase change switching device could have advantages of process in terms of material similarity and structural simplification.