• Smart Structures and Systems
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• v.19 no.5
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• pp.487-497
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• 2017

Semi-active devices use the building's own motion to produce resistive forces and are thus strictly dissipative and require little power. Devices that independently control the binary open/closed valve state can enable novel device hysteresis loops that were not previously possible. However, some device hysteresis loops cannot be obtained without active analog valve control allowing slower, controlled release of stored energy, and is presents an ongoing limitation in obtaining the full range of possibilities offered by these devices. This in silico study develops a proportional-derivative feedback control law using a validated nonlinear device model to track an ideal diamond-shaped force-displacement response profile using active analog valve control. It is validated by comparison to the ideal shape for both sinusoidal and random seismic input motions. Structural application specific spectral analysis compares the performance for the non-linear, actively controlled case to those obtained with an ideal, linear model to validate that the potential performance will be retained when considering realistic nonlinear behaviour and the designed valve control approach. Results show tracking of the device force-displacement loop to within 3-5% of the desired ideal curve. Valve delay, rather than control law design, is the primary limiting factor, and analysis indicates a ratio of valve delay to structural period must be 1/10 or smaller to ensure adequate tracking, relating valve performance to structural period and overall device performance under control. Overall, the results show that active analog feedback control of energy release in these devices can significantly increase the range of resetable, valve-controlled semi-active device performance and hysteresis loops, in turn increasing their performance envelop and application space.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.628-635
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• 2004

The characteristic of thin film resistor with low TCR( temperature coefficient of resistance ) and high precision are studied. The thin film resistor for 1/4W was fabricated and characteristic of these resistors was investigated. The fabricated device had the thickness of $2.48{\leqq}$ and the resistivity of $0.27{\omega}mm$. The electrical characteristic was evaluated by HP 4339B and 4284A instruments with HP l6339A. The profile of trimmed structure was also measured by non contact interferometer. The change of resistance and TCR increased with increasing roughness and resistance. To reduce the effect of stress annealing treatment was performed in the range of 563 to 623 K after trimming. The characteristic was improved after annealing. It is expected the fabricated device can be useful for high precision and low TCR. Fabricated thin film resistor has average deviation of resistance less than $0.35{\%}$ and TCR within 60.60ppm/K.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1993.10a
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• pp.42-46
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• 1993

This paper presents development of a pratical tool deflection compensation system in order to reduce the machining error by the tool deflection in the end-milling process. The system is a tool adapter which includes 2-axis force sensor for detecting tool deflection and 2-axis tool tilting device for adjusting tool position through computer interface in on-line process. In experiments, it is revealed that the force sensor applying parallel plate principle and strain gauge is proper to obtain dynamic process signal, and the tilting device using stepping motor and cam drive mechanism is suitable to have necessary action. By the system and control algorithm, it is possible to get precise machining surface profile without excessive machining error and overcut generated due to increased cutting force in more productive machining condition.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.1
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• pp.84-93
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• 1998

Planar graded index optical waveguides have been formed by Ag$^{+}$ ion exchange in the BK7 optical glass. The experimental results of diffusion and modal characteristics of Ag$^{+}$-Na$^{+}$ exchanged BK7 glass waveguides are presented. Measurements of the mode indices have been measured. We found the relations between the process and device parameters such as the diffusion depth and the square root of the diffusion time, diffusion coefficient and diffusion temperature, and diffusion ion concentration and surface index change. A theoretical gaussian function refractive index profile matched best with the measured data for all the guided modes. The empirical relations between the process and the device parameters are derived and subsequently used to formulate a systematic procedure for fabricating singlemode and multimode waveguides.uides.

• Journal of the Korean Vacuum Society
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• v.8 no.4B
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• pp.556-564
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• 1999

The analysis on heat fluxed on and transmission efficiencies by the collimators of neutral beam injection lines in KSTAR tokamak device has been carried out. And a mathematical model describing non-Gaussian beam distribution profile has been established. A neutral beam injection device is composed of 3 separate ion sources and corresponding beam transport lines, which deal with 7.8 MW of beam power, respectively. The divergence angles of ion beam are $1.2^{\circ}$and $0.5^{\circ}$, in vertical and horizontal directions, respectively. The maximum normal heat load on source exit scraper is 9.1 kW/$\textrm{cm}^2$ and net beam transmission efficiency is ~28%. The effect of misalignment of ion source and scrapers on the scraper heat load and beam transmission also has been analyzed.

• Journal of the Semiconductor & Display Technology
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• v.2 no.2
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• pp.17-20
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• 2003

The current drive in an MOSFET is limited by the intrinsic channel resistance. All the other parasitic elements in a device structure playa significant role and degrade the device performance. These other resistances need to be less than 10%-20% of the channel resistance. To achieve the requirements, we should investigate a methodology of separation and quantification of those resistances. In this paper, we developed the extraction method of resistances using calibrated TCAD simulation. The resistance of the extension region is also partially determined by the formation of a surface accumulation region that forms under the gate in the tail region of the extension profile.

• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.37-42
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• 2009

The performance of an OLED(organic luminescent emitting device) fabrication system strongly depends on the design of the evaporation cell-source. Trends in display sizes have hauled the enlargement of mother glass substrates. The enlargement of substrates requires the improvement and the enlargement of the effusion cell-source for OLED evaporation process. The deposited layers should be as uniform as possible, and therefore it is important to know the effusion profile of the molecules emitted from the cell-source. Conventional 2D DSMC algorithm cannot be used for simulating the new concept cell-source design, such as a linear source. This work concerns the development of 3D DSMC (direct simulation Monte Carlo) analysis for simulating the behavior of the evaporation cell-sources. In this paper, the 3D DSMC algorithm was developed and the film thickness profiles were obtained by the numerical analysis.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.178-178
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• 1999

Low temperature Si epitaxy can provide flexibility for a device designer to tailor or optimize the device performance. It is better method for controlling the doping thickness, concentration and profile than ion implantation and diffusion. But there is a limited growth thickness in this method. At a given temperature, the film grows epitaxially for a certain limiting thickness(hepi) and becomes amorphous. The transition from crystalline Si to amorphous Si is abrupt. In this study, Si film was deposited by ion beam sputter deposition on Si (0001) above a limiting thickness and measure the strain in the interface between crystalline Si and amorphous Si. The strain was compressive and the maximum value was about 2%.

• Journal of Korea Multimedia Society
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• v.21 no.9
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• pp.1110-1118
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• 2018

Personal sound amplifiers(PSAPs) provide accessible and affordable healthcare to individuals with hearing disability. Many studies are in progress for affordable PSAP development, but still people do not have a best fitting profile for the PSAP depending on their hearing test. As a result, they do not have a personalized and profiled music and sound, which are very helpful for those who has hearing problems. In this paper, we propose a device and mobile system to provide music with an equalizer value according to the hearing condition of an individual to prevent the hearing loss. In order to overcome the limit of frequency band of the equalizer in a smart phone, we developed bluetooth controlled equalizer based on the fitting profiles.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38C no.5
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• pp.454-463
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• 2013

The smart phone has already proliferated, and the smart devices of the living appliances and vehicles embedded with communication device, sensors and connected with the smart phone have been developed. Currently it can provide simple remote controller and user interfaces, it could be envisaged that intelligent technology is converged with the smart phone, and Personal Environment Service in which the smart devices are configured automatically as reflecting personal preference, device attribute, and living environment condition would be activated in the future. In this paper PES services, system architecture, and core technology are described.