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Growth and Characterization of $CuInTe_2$ Single Crystal thin Films by Hot Wall Epitaxy (Hot Wall Epitaxy(HWE) 방법에 의한 $CuInTe_2$ 단결정 박막 성장과 특성에 관한 연구)

  • 홍광준;이관교;이상열;유상하;정준우;정경아;백형원;방진주;신영진
    • Korean Journal of Crystallography
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    • v.11 no.4
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    • pp.212-223
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    • 2000
  • A stochiometric mix of CuInTe₂ polycrystal was prepared in a honizonatal furnace. To obtain the single crystal thin films, CuInTe₂ mixed crystal was deposited on throughly etched GaAs(100) by the HWE system. The source and substrate temperatures were 610℃ and 450℃ respectively, and the thickness of the deposited single crystal thin film was 2.4㎛. CuInTe₂ single crystal thin film was proved to be the optimal growth condition when the excition emission spectrum was the strongest at 1085.3 nm(1.1424 eV) of photoluminescence spectrum at 10 K, and also FWHM of Double Crystal X-ray Rocking Curve (DCRC) was the smallest, 129 arcsec. The Hall effect on this sample was measured by the method of Van der Pauw, and the carrier density and mobility dependent on temperature were 9.57x10/sup 22/ electron/㎥, 1.31x10/sup -2/㎡/V·s at 293 K, respectively. The ΔCr(Crystal field splitting) and the ΔSo (spin orbit coupling splitting( measured at f10K from the photocurrent peaks in the short wavelength of the CuInTe₂ single crystal thin film were about 0.1200 eV, 0.2833 eV respectively. From the PL spectra of CuInTe₂ single crystal thin film at 10 K, the free exciton (E/sub x/) was determined to be 1064.5 nm(1.1647 eV) and the donor-bound exciton(D/sup 0/, X) and acceptor-bound exciton (A/sup 0/, X) were determined to be 1085.3 nm(1.1424 eV) and 1096.8 nm(1.1304 eV0 respectively. And also, the donor-acciptor pair (DAP)P/sub 0/, DAP-replica P₁, DAP-replica P₂ and self-activated (SA) were determined to be 1131 nm (1.0962 eV), 1164 nm(1.0651 eV), 1191.1 nm(1.0340 eV) and 1618.1 nm (0.7662 eV), respectively.

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Health-Care Providers' Perspectives towards Childhood Cancer Treatment in Kenya

  • Njuguna, F;Burgt, RHM van der;Seijffert, A;Musimbi, J;Langat, S;Skiles, J;Sitaresmi, MN;Ven, PM van de;Kaspers, GJL;Mostert, S
    • Asian Pacific Journal of Cancer Prevention
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    • v.17 no.9
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    • pp.4445-4450
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    • 2016
  • Background: This study explored perspectives of health-care providers on childhood cancer treatment in Kenya. Materials and Methods: A self-administered questionnaire was completed by 104 health-care providers in January and February 2013. Results: Seventy six percent of the health-care providers believed cancer to be curable. More doctors than other health-care providers had this positive opinion (p=0.037). The majority of health-care providers (92%) believed that most children with cancer will not be able to finish their treatment due to financial difficulties. They considered that prosperous highly-educated parents adhere better with treatment (88%) and that doctors adhere better with treatment for prosperous highly-educated parents (79%). According to 74% of health-care providers, quality of care is better for prosperous highly-educated parents (74%). Most health-care providers reported giving more explanation (71%), work with greater accuracy (70%) and use less difficult vocabulary (55%) to prosperous more educated families. Only 34% of health-care providers reported they feel more empathy towards patients from prosperous families. Reasons for non-adherence with the protocol according to health-care providers are: family refuses drugs (85%), inadequate supply of drugs at pharmacy (79%), child looks ill (75%), and financial difficulties of parents (69%). Conclusions: Health-care providers' health beliefs and attitudes differ for patients with families having high versus low socio-economic backgrounds.

Growth and Optical Properties for ZnO Thin Film by Pulesd Laser Deposition (펄스 레이저 증착(PLD)법에 의한 ZnO 박막 성장과 광학적 특성)

  • 홍광준;김재열
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 2004.10a
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    • pp.233-244
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    • 2004
  • ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$)substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}$ and $299\;{\textrm}cm^2/V.s$ at 293K. respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T+463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{zn},\;Vo,\;Zn_{int},\;and\;O_{int}$ obtained by PL measurements were classified as a donors or acceptors type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in $ZnO/Al_2O_3$ did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.

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Growth and Effect of Thermal Annealing for ZnO Thin Film by Pulsed Laser Deposition (펄스 레이저 증착(PLD)법에 의한 ZnO 박막 성장과 열처리 효과)

  • 홍광준
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.5
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    • pp.467-475
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    • 2004
  • ZnO epilayer were synthesized by the pulsed laser deposition(PLD) process on $Al_2$ $O_3$substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire(A $l_2$ $O_3$) substrate at a temperature of 400 $^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are 8.27${\times}$$10^{16}$$cm^{-3}$ and 299 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}$(T)= 3.3973 eV - (2.69 ${\times}$ 10$_{-4}$ eV/K) $T^2$(T+463k). After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Zn}$ , $V_{o}$ , Z $n_{int}$, and $O_{int}$ obtained by PL measurements were classified as a donors or accepters type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in ZnO/A $l_2$ $O_3$did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.s.s.s.

Growth and photocurrent properties for ZnO Thin Film by Pulsed Laser Deposition (펄스 레이저 증착(PLD)법에 의한 ZnO 박막 성장과 특성)

  • Hong, Kwang-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.74-75
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    • 2005
  • ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$) substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence. The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}cm^{-3}$ and $299cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 3.3973 eV - ($2.69{\times}10^{-4}$ eV/K)$T_2$/(T + 463 K). The crystal field and the spin-orbit splitting energies for the valence band of the ZnO have been estimated to be 0.0041 eV and 0.0399 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the $\triangle$so definitely exists in the $\ulcorner_6$ states of the valence band of the ZnO. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

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Growth of ZnO thin film by pulsed laser deposition and photocurrent study on the splitting of valance band (펄스 레이저 증착(PLD)법에 의한 ZnO 박막 성장과 가전자대 갈라짐에 대한 광전류 연구)

  • Hong, Kwang-Joon
    • Journal of Sensor Science and Technology
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    • v.14 no.3
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    • pp.160-168
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    • 2005
  • ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_{2}O_{3}$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_{2}O_{3}$) substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence. The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}1016cm^{-3}$ and $299cm^{2}/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$=3.3973 eV-($2.69{\times}10^{-4}$ eV/K)$T^{2}$/(T+463K). The crystal field and the spin-orbit splitting energies for the valence band of the ZnO have been estimated to be 0.0041 eV and 0.0399 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{6}$ states of the valence band of the ZnO. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-$, and $C_{1}-$exciton peaks for n = 1.

Development of a User-friendly Continuous-system Simulation Language (사용자 편의성을 고려한 연속체계 모의실험 언어의 개발)

  • 민경하;임창관;박찬모
    • Proceedings of the Korea Society for Simulation Conference
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    • 1993.10a
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    • pp.12-13
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    • 1993
  • 컴퓨터를 이용한 모의 실험 방법은 과학 및 공학 분야뿐만 아니라 경제,사회 현상등에도 널리 적용될 수 있는 유용한 도구이다. 그 중에서도 연속체계 모의 실험은 미분 방정식으로 모델링되는 시스템을 대상으로 하는 경우가 맡으며, 이를 위하여 그동안 맡은 연속체계 모의 실험 언어들이 개발되었다. 그러나 그들은 대부분 사용하기가 복잡하여 사용자 편의성을 고려한 모의 실험 언어에 대한 필요성이 증대되었다. 본 연구에서는 사용자에개 최대한 편의성을 제공하는 연속체계 모의 실험 언어인 PCSL (Postech Continuous-system Simulation language)을 개발하였다. PCSL 프로그램은 프로그램 헤더, 상수 정의부, 함수 정의부, 매개 변수 정의부, 초기화 선언부, 모델 정의부, 종료 조건 선언부, 출력 선언부 등으로 나누어 진다. 그리고 출력으로는 계산 결과를 파일에 저장, 흑은 수치로 인쇄하거나 그래프로 그려서 보여준다. PCSL 처리 시스템은 모델 정의부에서 주어진 미분방정식을 해석해서 digital-analog simulation 기법으로 풀 수 있는 형태로 변환하는 번역기와 이렇게 변환된 형태의 미분방정식과 여러 가지 조건들을 고려해서 C 프로그램을 생성해주는 생성기, 생성된 C 프로그램을 실행시켜서 그 결과를 얻는 실행기,그리고 사용자에게 편리한 입출력 방법을 제공하는 사용자 인터페이스로 구성된다. 번역기에서는 모델로 주어진 미분방정식의 종류를 결정한 후에 이들을 digital-analog simulation 기법으로 풀 수 있는 형태로 변환한다. 생성기에서는 번역기의 결과를 받고,프로그램 상의 여러 가지 조건들을 고려해서 C 프로그램을 생성한다. 여기서 생성된 C프로그램은 미분방정식을 포함하는 ‘f.c'와 조건들을 포함하는'main.h', 그리고 digital-analog simulation 기법을 이용하는 모의 실험 알고리즘을 구현한 'main.c'로 구성된다. 그리고 실행기에서는 생성기에서 생성한 C 프로그램을 실행시켜서 결과를 얻는다. 여기에서 필요로 하는 PCSL 프로그램의 내응은 종료 조건 선언부, 출력 선언부 등이다. 마지막으로 사용자 인터페이스는 사용자가 간편하게 PCSL 프로그램을 입력할 수 있게 도와주며 모의 실험 결과를 쉽게 화면상에 보여주기 위한 것이다. 이 때에 사용자가 원하면 계산 결과를 그래프로 그려서 보여주는 기능과 화면에 보이는 결과를 프린터로 출력할 수 있는 기능을 제공한다. 실형 결과로는 먼저 선형 상미분방정식의 예로 mass-damper-spring system, 비선형 상미분방정식의 예로는 van der Pol 방정식, 연립 상미분방정식의 예로는 mixing tank problem 등을 보였으며, 그의 공학에서 일어나는 여러 가지 문제들도 다루었다.

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A Study on Bond Strength of Procelain with Non Precious Alloy (도재전장관용 비귀금속합금과 도재의 융착결합에 관한 연구)

  • Kang, Sung-Hyun
    • The Journal of Korean Academy of Prosthodontics
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    • v.18 no.1
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    • pp.49-57
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    • 1980
  • The adhesive mechanisms on the metal-ceramic restorations have been reported to be mechanical interlocking, chemical bonding, compressive force, and Van der Waal's force, etc. Of these, the mechanical interlocking and chemical bonding forces are thought to affect the adhesive force between Ni-Cr alloy and porcelain. This study investigates the adhesion of Ni-Cr alloy to porcelain according to surface treatment. For this purpose, the following experiments were made; The compositions of Ni-Cr alloy as cast by emission spectrograph, and the oxides produced on Ni-Cr alloy during degassing at $1850^{\circ}F$ for 30 minutes in air and in vacuum were analyzed by X-ray diffractograph. The metal phases of Ni-Cr alloy were observed according to porcelain-baking cyclic heat treatment by photo microscope and the distribution and the shift of elements of Ni-Cr alloy and porcelain and the failure phases between Ni-Cr alloy and porcelain by scanning electron microscope. The adhesive force between Ni-Cr alloy and porcelain was measured according to surface treatment with oxidization and roughening by Instron Universal Testing Machine. Results were as follows; 1. The metal phases of Ni-Cr alloy as cast and degassing state showed the enlarged and fused core, but when subjected to porcelain-baking cyclic heat treatment, showed a dendrite growing. 2. The kinds of metal oxides produced on Ni-Cr alloy during degassing were found to be NiO and $Cr_2O_3$. 3. The distribution of elements at the interface of Ni-Cr alloy and porcelain in degassing state showed demarcation line, but in roughening state, showed mechanical interlocking phase. 4. The shift of elements at the interface occurred in both states, but the shift amount was found to be larger in roughening than in degassing. 5. The adhesive force between Ni-Cr alloy and porcelain was found to be $3.45{\pm}0.93kg/mm^2$, in degassing and $3.82{\pm}0.99kg/mm^2$, in roughening. 6. The failure phase between Ni-Cr alloy and porcelain showed the mixed type failure.

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The Structure of 1-[2-[[(4-chlorophenyl)-methyl]thio]-2-(2, 4-dichlorphenyl)ethyl]-1H imidazole (Sulconazole) nitrate, C18H16Cl3N3O3S

  • Shin, Hyun-So;Song, Hyun;Cho, Sung-Il;Pakr, Keun-Il
    • Bulletin of the Korean Chemical Society
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    • v.18 no.1
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    • pp.14-18
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    • 1997
  • Sulconazole nitrate, C18H16Cl3N3O3S, crystallizes in monoclinic, space group C2/c, with a=14.401(1), b=8.051(1), c=34.861(2) Å, β=95.9(1)°, g=0.58 mm-1, Dc=1.523 g/cm3, Dm=1.522 g/cm3, F(000)=1888.0, and z=8. Intensities for 2460 unique reflections were measured on a CAD4 diffractometer with graphited-monochromated Mo-Kα radiation. The structure was solved by direct method and refined by full matrix least squares to a final R=0.071 for 2182 reflections (Io > 2σIo). The bond lengths and angles are comparable with the values found in the analogues imidazole derivatives. The 2,4-dichlorophenyl ring(A) and the p-chlorophenyl ring(B) are almost planar with different heights [dihedral angle 17.3°] while the imidazole ring(C) is nearly perpendicular to the two phenyl rings[dihedral angles about the two rings A, B are 110.8° and 96.1° respectively]. In order to understand the overall conformation we calculated the selected distances (l1, l2, l3) among the center of the three rings and considered the imaginary plan D[C(7), C(9) and C(16)]. The two polar group S(8) and N(19) do not have gauche conformation and l2 value (4.47 Å) is shorter than the other imidazole derivatives. One -NO3 group are hydrogen bonded the two neighbored sulconazole molecules. The molecular crystal packing is also formed by two hydrogen bondings and van der Waals forces.

Interobserver agreement for detecting Hill-Sachs lesions on magnetic resonance imaging

  • Alkaduhimi, Hassanin;Saarig, Aimane;Amajjar, Ihsan;van der Linde, Just A.;van Wier, Marieke F.;Willigenburg, Nienke W.;van den Bekerom, Michel P.J.
    • Clinics in Shoulder and Elbow
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    • v.24 no.2
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    • pp.98-105
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    • 2021
  • Background: Our aim is to determine the interobserver reliability for surgeons to detect Hill-Sachs lesions on magnetic resonance imaging (MRI), the certainty of judgement, and the effects of surgeon characteristics on agreement. Methods: Twenty-nine patients with Hill-Sachs lesions or other lesions with a similar appearance on MRIs were presented to 20 surgeons without any patient characteristics. The surgeons answered questions on the presence of Hill-Sachs lesions and the certainty of diagnosis. Interobserver agreement was assessed using the Fleiss' kappa (κ) and percentage of agreement. Agreement between surgeons was compared using a technique similar to the pairwise t-test for means, based on large-sample linear approximation of Fleiss' kappa, with Bonferroni correction. Results: The agreement between surgeons in detecting Hill-Sachs lesions on MRI was fair (69% agreement; κ, 0.304; p<0.001). In 84% of the cases, surgeons were certain or highly certain about the presence of a Hill-Sachs lesion. Conclusions: Although surgeons reported high levels of certainty for their ability to detect Hill-Sachs lesions, there was only a fair amount of agreement between surgeons in detecting Hill-Sachs lesions on MRI. This indicates that clear criteria for defining Hill-Sachs lesions are lacking, which hampers accurate diagnosis and can compromise treatment.