• Transactions of the Korean Society of Mechanical Engineers B
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• 제20권5호
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• pp.1671-1678
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• 1996

In external chemical vapor deposition processes including VAD and OVD the distribution of flame-synthesized silica particles is determined by heat and mass transfer limitations to particle formation. Combustion gas flow velocities are such that the particle diffusion time scale is longer than that of gas flow convection in the zone of particle formation. The consequence of these effects is that the particles formed tend to remain along straight smooth flow stream lines. Silica particles are formed due to oxidation and hydrolysis. In the hydrolysis, the particles are formed in diffuse bands and particle formation thus requires the diffusion of SiCl$\_$4/ toward CH$\_$4//O$\_$2/ combustion zone to react with H$\_$2/O diffusing away from these same zones on the torch face. The conversion kinetics of hydrolysis is fast compared to diffusion and the rate of conversion is thus diffusion-limited. In the language of combustion, the hydrolysis occurs as a Burke-Schumann process. In selected conditions, reaction zone shape and temperature distributions predicted by the Burke-Schumann analysis are introduced and compared with experimental data available. The calculated centerline temperatures inside the reaction zone agree well with the data, but the calculated values outside the reaction zone are a little higher than the data since the analysis does not consider diffusion in the axial direction and mixing of the combustion products with ambient air. The temperatures along the radial direction agree with the data near the centerline, but gradually diverge from the data as the distance is away from the centerline. This is caused by the convection in the radial direction, which is not considered in the analysis. Spatial distribution of silica particles are affected by convection and diffusion, resulting in a Gaussian form in the radial direction.

• Korean Chemical Engineering Research
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• 제60권1호
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• pp.62-69
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• 2022

Graphene has a large surface area to volume ratio and good mechanical and electrical property and biocompatibility. This study described the electrochemical deposition and reduction of graphene oxide on the surface of indium tin oxide (ITO) glass slide and electrochemical characterization of graphen-modified ITO. Cyclic voltammetry was used for the deposition and reduction of graphene oxide. The surface of graphen-coated ITO was characterized using scanning electron microscopy and energy dispesive X-ray spectroscopy. The electrodes were evaluated by performing cyclic voltammetry and electrochemical impedance spectroscopy. The number of cycles and scan rate greatly influenced on the coverage and the degree of reduction of graphene oxide, thus affecting the electrochemical properties of electrodes. Modification of ITO with graphene generated higher current with lower charge transfer resistance at the electrode-electrolyte interface. Glucose oxidase was immobilized on the graphene-modified ITO and has been found to successfully generate electrons by oxidizing glucose.

• Korean Journal of Materials Research
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• 제33권11호
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• pp.475-481
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• 2023

Recently, the electron transport layer (ETL) has become one of the key components for high-performance perovskite solar cell (PSC). This study is motivated by the nonreproducible performance of ETL made of spin coated SnO₂ applied to a PSC. We made a comparative study between tin oxide deposited by atomic layer deposition (ALD) or spin coating to be used as an ETL in N-I-P PSC. 15 nm-thick Tin oxide thin films were deposited by ALD using tetrakisdimethylanmiotin (TDMASn) and using reactant ozone at 120 ℃. PSC using ALD SnO₂ as ETL showed a maximum efficiency of 18.97 %, and PSC using spin coated SnO₂ showed a maximum efficiency of 18.46 %. This is because the short circuit current (Jsc) of PSC using the ALD SnO₂ layer was 0.75 mA/cm² higher than that of the spin coated SnO₂. This result can be attributed to the fact that the electron transfer distance from the perovskite is constant due to the thickness uniformity of ALD SnO₂. Therefore ALD SnO₂ is a candidate as a ETL for use in PSC vacuum deposition.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.701-705
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• 2002

In order to realize full color display, two approaches were used. The first method is the patterning of red, green, and blue emitters using a selective deposition. Another approach is based on a white-emitting diode, from which the three primary colors could be obtained by micro-patterned color filters. White-light-emitting organic light emitting devices (OLEDs) are attracting much attention recently due to potential applications such as backlights in liquid crystal displays (LCDs) or other illumination purposes. In order for the white OLEDs to be used as backlights in LCDs, the light emission should be bright and have Commission Internationale d'Eclairage (CIE) chromaticity coordinates of (0.33, 0.33). For obtaining white emission from OLEDs, different colors should be mixed with proper balances even though there are a few different methods for mixing colors. In this study, we will report a white organic electroluminescent device based on an incomplete energy transfer. In which the blue and green emission come from the same layer via incomplete energy transfer.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.561-561
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• 2012

Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as fast electron mobility, high thermal conductivity and optical transparency, and also found many applications such as field-effect transistors (FET), energy storage and conversion, optoelectronic device, electromechanical resonators and chemical sensors. Several techniques have been developed to form the graphene. Especially chemical vapor deposition (CVD) is a promising process for the large area graphene. For the electrically isolated devices, the graphene should be transfer to insulated substrate from Cu or Ni. However, transferred graphene has serious drawback due to remaining polymeric residue during transfer process which induces the poor device characteristics by impurity scattering and it interrupts the surface functionalization for the sensor application. In this study, we demonstrate the characteristics of solution-gated FET depending on the removal of polymeric residues. The solution-gated FET is operated by the modulation of the channel conductance by applying a gate potential from a reference electrode via the electrolyte, and it can be used as a chemical sensor. The removal process was achieved by several solvents during the transfer of CVD graphene from a copper foil to a substrate and additional annealing process with H2/Ar environments was carried out. We compare the properties of graphene by Raman spectroscopy, atomic force microscopy(AFM), and X-ray Photoelectron Spectroscopy (XPS) measurements. Effects of residual polymeric materials on the device performance of graphene FET will be discussed in detail.

• Journal of the Korea Academia-Industrial cooperation Society
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• 제7권5호
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• pp.759-765
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• 2006

Temperature distribution of the circular heat source was studied by analyzing the heat transfer of the environment of the circular source for OLED. Circular nozzle source was used to fabricate thin organic layer as the organic material in it was heated, vaporized and deposited to the large size flat panel. Circular source for large size fat panel for OLED has been modified to obtain higher productivity and heat transfer characteristics was predicted using computer simulation. Fundamentals for OVPD process also was presented to estimate flow and heat transfer characteristics of the process which can increase the material efficiency.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.357-357
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• 2012

박막트랜지스터의 전극으로 Au, Ag, Mo, ITO와 같은 물질들이 이미 많이 연구되어 왔으며, 투명 Source/Drain 전극을 활용한 물질로는 ITO에 초점이 맞춰져 왔다. 하지만 ITO의 높은 가격과 Indium의 인체 유해한 독성 때문에 ITO를 대체하는 물질에 대해 많은 연구가 진행되고 있다. 그 중 Al이 도핑된 ZnO (AZO) 는 가시광 영역에서 85% 이상의 높은 투과율과 높은 전도성, 낮은 비저항으로 다양한 광전소자의 전극과 윈도우 물질로 많은 응용 가능성을 보여주고 있다. 본 실험에서는 고 품질의 박막성장이 가능하고, 박막의 두께를 세밀하게 조절할 수 있는 Pulsed Laser Deposition (PLD) 을 이용하여 온도변화에 따라 AZO 박막을 성장시키고 구조적, 전기적, 광학적 특성을 조사하였다. 또한 온도변화가 AZO 박막 특성에 미치는 영향을 분석하여 Source/Drain 전극으로 사용하기 위한 조건을 최적화하였고, 실제 투명박막트랜지스터 제작을 통해 소자의 I-V Curve 와 Transfer 특성을 확인하고, Transfer Length Method 방법을 이용하여 투명박막트랜지스터의 접촉저항, 채널 비저항 등을 확인해 보았다. 소결된 타겟으로는 99.99%의 순도를 갖는 ZnO-$Al_2O_3$ (98:2 wt%) 타겟을 이용하였으며, 장비조건으로는 355 nm의 파장대역을 갖는 Nd:YAG 레이저를 사용하였고, 실험변수로는 온도범위 RT, $200^{\circ}C$, $400^{\circ}C$, $600^{\circ}C$에서 실험을 진행하였다. AZO 박막의 구조적, 전기적 특성을 분석하기 위해 각각 X-Ray Diffraction (XRD), Hall measurement 장비를 사용하였으며, 광학적 특성을 분석하기 위한 투과도의 측정은 UV-Visible spectrophotometer 장비를 사용하였다.

• Journal of the Microelectronics and Packaging Society
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• 제30권2호
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• pp.60-64
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• 2023

In this study, the electrical contact resistance characteristics between graphene and metals, which is one of important factors for the performance of graphene-based devices, were compared. High-quality graphene was synthesized by chemical vapor deposition (CVD) method, and Al, Cu, Ni, and Ti as electrode materials were deposited on the graphene surface with equal thickness of 50 nm. The contact resistances of graphene transferred to SiO₂/Si substrates and metals were measured by the transfer length method (TLM), and the average contact resistances of Al, Cu, Ni, and Ti were found to be 345 Ω, 553 Ω, 110 Ω, and 174 Ω, respectively. It was found that Ni and Ti, which form chemical bonds with graphene, have relatively lower contact resistances compared to Al and Cu, which have physical adsorption properties. The results of this study on the electrical properties between graphene and metals are expected to contribute to the realization of high-performance graphene-based devices including electronics, optoelectronic devices, and sensors by forming low contact resistance with electrodes.

• Korean Journal of Materials Research
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• 제30권3호
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• pp.142-148
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• 2020

Graphene has attracted the interest of many researchers due to various its advantages such as high mobility, high transparency, and strong mechanical strength. However, large-area graphene is grown at high temperatures of about 1,000 ℃ and must be transferred to various substrates for various applications. As a result, transferred graphene shows many defects such as wrinkles/ripples and cracks that happen during the transfer process. In this study, we address transfer-free, large-scale, and high-quality monolayer graphene. Monolayer graphene was grown at low temperatures on Ti (10nm)-buffered Si (001) and PET substrates via plasma-assisted thermal chemical vapor deposition (PATCVD). The graphene area is small at low mTorr range of operating pressure, while 4 × 4 ㎠ scale graphene is grown at high working pressures from 1.5 to 1.8 Torr. Four-inch wafer scale graphene growth is achieved at growth conditions of 1.8 Torr working pressure and 150 ℃ growth temperature. The monolayer graphene that is grown directly on the Ti-buffer layer reveals a transparency of 97.4 % at a wavelength of 550 nm, a carrier mobility of about 7,000 ㎠/V×s, and a sheet resistance of 98 W/□. Transfer-free, large-scale, high-quality monolayer graphene can be applied to flexible and stretchable electronic devices.

• Transactions of the Korean Society of Mechanical Engineers B
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• 제35권7호
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• pp.665-676
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• 2011

In this study, the nucleate pool boiling heat transfer coefficients (HTCs) and critical heat flux (CHF) for a smooth and square flat heater in a pool of pure water with and without carbon nanotubes (CNTs) dispersed at $60^{\circ}C$ were measured. Tested aqueous nanofluids were prepared using CNTs with volume concentrations of 0.0001%, 0.001%, and 0.01%. The CNTs were dispersed by chemically treating them with an acid in the absence of any polymers. The results showed that the pool boiling HTCs of the nanofluids are higher than those of pure water in the entire nucleate boiling regime. The acid-treated CNTs led to the deposition of a small amount of CNTs on the surface, and the CNTs themselves acted as heat-transfer-enhancing particles, owing to their very high thermal conductivity. There was a significant increase in the CHF- up to 150%-when compared to that of pure water containing CNTs with a volume concentration of 0.001%. This is attributed to the change in surface characteristics due to the deposition of a very thin layer of CNTs on the surface. This layer delays nucleate boiling and causes a reduction in the size of the large vapor canopy around the CHF. This results in a significant increase in the CHF.