• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권12호
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• pp.573-578
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• 2003

In this study, new type of induction charging system for electrostatic spraying was manufactured and proposed to improve the electrical safety and charging efficiency. And parameters of proposed system to generate the maximum deposition current with electrical safety were selected and investigated. The selected parameters were frequency of square pulse and thickness of insulation material, outer diameter of device and thickness and positions of electrode. Charging quantity of water drop was measured by deposition current detected from sensing plate indirectly. The maximum deposition current for each parameter were 3.5[uA] at the frequency of 15[kHz] and thickness of 0.25[mm] insulating layer. And maximum deposition currents were 2.8[uA] and 3.0[uA] at 25[mm] outer diameter of charging device and 0.25[mm] thickness of electrode each. Effects of electrode position from spraying nozzle on deposition current was a little.

• 한국재료학회지
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• 제27권2호
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• pp.69-75
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• 2017

To establish low-temperature process conditions, process-property correlation has been investigated for Ga-doped ZnO (GZO) thin films deposited by pulsed DC magnetron sputtering. Thickness of GZO films and deposition temperature were varied from 50 to 500 nm and from room temperature to $250^{\circ}C$, respectively. Electrical properties of the GZO films initially improved with increase of temperature to $150^{\circ}C$, but deteriorated subsequently with further increase of the temperature. At lower temperatures, the electrical properties improved with increasing thickness; however, at higher temperatures, increasing thickness resulted in deteriorated electrical properties. Such changes in electrical properties were correlated to the microstructural evolution, which is dependent on the deposition temperature and the film thickness. While the GZO films had c-axis preferred orientation due to preferred nucleation, structural disordering with increasing deposition temperature and film thickness promoted grain growth with a-axis orientation. Consequently, it was possible to obtain a good electrical property at relatively low deposition temperature with small thickness.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
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• pp.46-49
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• 2001

To estimate the influence of electrical properties due to the poly back seal(PBS). we were investigated defect density in surface by deposition thickness and breakdown voltage in specimens. Deposition thickness of specimen is prepared from 7,000[$\AA$] to 13,000[$\AA$], respectively. From the results, it is confirmed that PBS deposition thickness of 10,000[$\AA$] among the specimen is decreased defect density by contribution of the gettering effect.

• 한국환경과학회지
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• 제11권12호
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• pp.1235-1242
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• 2002

The purpose of this study is to estimate wet deposition flux and to investigate wet deposition characteristics by using the ADOM model. Wet deposition flux of highly reactive $SO_2$ is estimated by applying observed meteorological parameters and concentrations of chemical species to the ADOM model. Wet deposition is largely dependent on large scale precipitation and cloud thickness. Wet deposition flux of sulfate depends on $SO_2$ oxidation in clouds. When large amount of $SO_2$ is converted to sulfate, deposition flux of sulfate increases, but wet deposition flux of $SO_2$ is small. On the whole, the pattern of sulfate wet deposition flux agrees with the typical pattern of sulfate wet deposition that is high in the summer(July) and low in the winter(January).

• 한국전기전자재료학회논문지
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• 제11권1호
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• pp.33-40
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• 1998

The composite SiO$_2$/Si$_3$N$_4$/SiO$_2$(ONO) film formed by oxidation on nitride film has been widely studied as DRAM stacked capacitor multi-dielectric films. Load lock(L/L) LPCVD system by HF cleaning is used to improve electrical capacitance and to scale down of effective thickness for memory device, but is brings a new problem. Nitride film deposited using HF cleaning shows selective deposition on poly silicon and oxide regions of capacitor. This problem is avoidable by carpeting chemical oxide using $H_2O$$_2$cleaning before nitride deposition. In this paper, we study the limit of nitride thickness for abnormal oxidation and the initial deposition time for nitride deposition dependent on underlayer materials. We proposed an advanced fabrication process for stacked capacitor in order to avoid selective deposition problem and show the usefulness of nitride deposition using L/L LPCVD system by $H_2O$$_2$cleaning. The natural oxide thickness on polysilicon monitor after HF and $H_2O$$_2$cleaning are measured 3~4$\AA$, respectively. Two substrate materials have the different initial nitride deposition times. The initial deposition time for polysilicon is nearly zero, but initial deposition time for oxide is about 60seconds. However the deposition rate is constant after initial deposition time. The limit of nitride thickness for abnormal oxidation under the HF and $H_2O$$_2$cleaning method are 60$\AA$, 48$\AA$, respectively. The results obtained in this study are useful for developing ultra thin nitride fabrication of ONO scaling and for avoiding abnormal oxidation in stacked capacitor application.

• 소성∙가공
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• 제27권5호
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• pp.314-322
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• 2018

AlSi12 is a heat-resistant aluminum alloy that is lightweight, corrosion-resistant, machinable and attracting attention as a functional material in aerospace and automotive industries. For that reason, AlSi12 powder has been used for high performance parts through 3D printing technology. The purpose of this study is to observe deposition characteristics of AlSi12 powder in a direct energy deposition (DED) process (one of the metal 3D printing technologies). In this study, deposition characteristics were investigated according to various process parameters such as laser power, powder feed rate, scan speed, and slicing layer thickness. In the single track deposition experiment, an irregular bead shape and balling or humping of molten metal were formed below a laser power of 1,000 W, and the good-shaped bead was obtained at 1.0 g/min powder feed rate. Similar results were observed in multi-layer deposition. Observation of deposited height after multi-layer deposition revealed that over-deposition occurred at all conditions. To prevent over-deposition, slicing layer thickness was experimentally determined at given conditions. From these results, this study presented practical conditions for good surface quality and accurate geometry of deposits.

• 대한기계학회논문집
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• 제19권11호
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• pp.3063-3071
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• 1995

An experimental study has been carried out for the heat transfer and particle deposition during the Outside Vapor Deposition process. The surface temperatures of deposited layers, and the rates, efficiencies and porosities of particle deposition were measured. It is shown that the axial variation of the surface temperature can be assumed to be quasi-steady and that as the traversing speed of burner is increased, the deposition rate, efficiency and porosity increase due to the decreased surface temperature. As the flow rate of the chemicals is increased, both the thickness of deposition layers and the surface temperature increase. Deposition rate also increases, however, deposition efficiency decreases for tests done. Later passes in early deposition stage result in higher surface temperatures due to increased thickness of porous deposited layers, which cause the deposition rate, efficiency, and porosity to decrease.

• 한국표면공학회지
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• 제29권5호
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• pp.301-313
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• 1996

The texture of vapor deposits(PVD and CVD) changes from the orientation that places the lowest energy lattice plane parallel to the substrate under the condition of low atom or ion concentration adjacent to the deposit, to the orientation that places the higher energy crystal planes parallel to the substrate as the atom or ion concentration adjacent to the deposit increases. However, in the early stage of deposition, the deposit-substrate interface energy and the surface energy constitute the most important energies of the system. Therefore, if the lattice match is established between the substrate and the deposit without generating much strain energy, the epitaxial growth takes place to reduce the interfacial energy. When the epitaxial growth does not take place, the surface energy is dominant in the early stage of deposition and the lowest energy crystal plane tends to be placed parallel to the substrate up to a critial thickness. The thickness depends on the deposition condition. If the deposition condition does not favor placing the lowest energy crystal plane parallel to the substrate, the initial texture will change to that compatible with the deposition condition as the film thickness increases, and the texture turnover thickness will be short. The microstructure and surface topography of deposits are related to their texture.

• Journal of Advanced Marine Engineering and Technology
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• 제33권5호
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• pp.637-645
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• 2009

The main purpose of this study lies on the improvement of micro dilution tunnel based on the typical porous tube type chamber. The characteristics of flow and temperature fields for steady state has been obtained by numerical analysis using FLUENT. Three different geometrical variations of the porous tube; a) increase of thickness at center, b) step increase of thickness at center and downstream, c) tapered increase of thickness, have been proposed. Accordingly results are obtained and compared in terms of penetration velocity and velocity ratio to therrmophoretic velocity for improvement against particulate deposition inside the tube. The penetration velocity and velocity ratio distributions in the upstream portion and portion of impinging of dilution air are apparently shown to be improved for the case of the step and tapered change of porous tube. The tapered change of tube thickness addition are shown to be the most effective among three geometrical changes. In addition, the considerable improvement against deposition are shown that its thickness should be at least 2mm.

• Journal of Radiation Protection and Research
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• 제43권4호
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• pp.131-136
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• 2018

Background: We investigated the current characteristics of a thin-film Ag electrode on a chemical vapor deposition (CVD) diamond. The CVD diamond is widely recognized as a radiation detection material because of its high tolerance against high radiation, stable response to various dose rates, and good sensitivity. Additionally, thin-film Ag has been widely used as an electrode with high electrical conductivity. Materials and Methods: Considering these properties, the thin-film Ag electrode was deposited onto CVD diamonds with varied deposition thicknesses (${\fallingdotseq}50/98/152/257nm$); subsequently, the surface thickness, surface roughness, leakage current, and photo-current were characterized. Results and Discussion: The leakage current was found to be very low, and the photo-current output signal was observed as stable for a deposited film thickness of 98 nm; at this thickness, a uniform and constant surface roughness of the deposited thin-film Ag electrode were obtained. Conclusion: We found that a CVD diamond radiation detector with a thin-film Ag electrode deposition thickness close to 100 nm exhibited minimal leakage current and yielded a highly stable output signal.