• Proceedings of the KSME Conference
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• 2007.05b
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• pp.2702-2707
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• 2007

The purpose of this study is to calculate the behavior of molecules for the generation of homogeneous thin-films in the process of spray deposition. The calculation system was composed of a suface molecular region and droplet molecular region. The thin-film was generated when droplet molecules fell to surface molecules. Lennard-Jones potential had been used as intermolecular potential, and only attraction 때 d repulsion had been used for the behavior of the droplet on the solid surface. As results, the behavior of the droplet was so much influenced by the surface temperature in the spray deposition process. High temperature of surface has higher porosity and larger spread area. It was found that simulation results generally agreed well with previous the experimental results. This simulation result will be the foundation for the deposition processes of industry.

• Journal of the Korean Society for Heat Treatment
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• v.28 no.1
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• pp.7-16
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• 2015

The fabrication of high quality graphene using chemical vapor deposition (CVD) method for application in semiconductor, display and transparent electrodes is investigated. Temperature and pressure have major impact on the growth of graphene. Graphene doping was obtained by deposition of $MoO_3$ thin films using thermal evaporator. Bilayer graphene and the metal layer graphene were obtained. According to the behavior of graphene growth P-type doping was confirmed. Graphene obtained through experiments was analyzed using optical microscopy, Raman spectroscopy, UV-visible light spectrophotometer, 4-point probe sheet resistance meter and atomic force microscopy.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.24 no.1
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• pp.9-20
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• 2000

An analysis of heat and mass transfer has been carried out for multi-wafer Low Pressure Chemical Vapor Deposition (LPCVD). Surface radiation analysis considering specular radiation among wafers, heaters, quartz tube and side plates of the reactor has been done to determine temperature distributions of 150 wafers in two dimensions. Velocity, temperature and concentration fields of chemical gases flowing in a reactor with multi-wafers have been then determined, which determines Si deposition growth rate and uniformity on wafers using two different surface reaction models. The calculation results of temperatures and Si deposition have been compared and found to be in a reasonable agreement with the previous experiments.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.28.2-28.2
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• 2009

Cobalt thin film was fabricated by a novel NH3-based plasma-enhanced atomic layer deposition(PE-ALD) using Co(CpAMD) precursor and $NH_3$ plasma. The PE-ALD Co thin films were produced well on both thermally grown oxide (100 nm) $SiO_2$ and Si(001) substrates. Chemical bonding states and compositions of PE-ALD Co films were analyzed by XPS and discussed in terms of resistivity and impurity level. Especially, we successfully developed PE-ALD Code position at very low growth temperature condition as low as $T_s=100^{\circ}C$, which enabled the fabrication of Co patterns through lift-off method after the deposition on PR patterned substrate without any thermal degradation.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.120-123
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• 2000

This paper reports a newly developed sol-gel process to synthesize dense YBCO thick films with BaTiO$_3$additives using electrophoretic deposition and metal alkoxide sol/particle suspension, which we successfully produce dense $YBCO+BaTiO_3$ ceramics at a rather low temperature, compared with the sintering temperature used in conventional methods. The thick films of HTS were prepared by electrophoretic deposition, using pre-sintered powder with barium titanate addition in the form of $BaTi(OR)_6$ solution in suspension for electrophoresis. The conditions for applied voltage and deposition times for electrophoretic deposition of HTS thick films were studied in detail.

• Electrical & Electronic Materials
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• v.9 no.8
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• pp.776-782
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• 1996

The electrical properties of vapor deposition polymerized polymide thin films for getting an in-line system with manufacturing process of semiconductor device, have been studied. Polyimide thin films fabricated by vapor deposition polymerization(VDP) method based on PMDA and 4,4'-DDE monomer were confirmed by FT-IR spectra. It is found that the major conduction carriers of thin films are ions, and the hopping length of ions is almost same with monomer length at the temperature over 120.deg. C through the analysis of electrical conduction mechanism. Also, The activation energy is about 0.69 eV at the temperature of >$30^{\circ}C$ - >$150^{\circ}C$ and it is shown that the resistivity at which thin films can be used as an insulating film between layers of semiconductor device, is 3.2*10$^{15}$ .ohm.cm.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.23 no.2
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• pp.262-271
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• 1999

A study of aerosol dynamics has been done to obtain axially and radially varying size distributions of particles generated in the Modified Chemical Vapor Deposition process. Heat and mass transfer have also been studied since particle generation and deposition strongly depend on the temperature field in a tube. Bimodal size distributions of particles have been obtained both in the particulate flow and in the deposited particle layer for the first time using the sectional method to solve aerosol dynamics. Variations of geometric mean diameter, geometric standard deviation have been studied for various parameters; flow rates and maximum wall temperature. The comparison between one-dimensional and two-dimensional approaches has also been made.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.998-1000
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• 2003

We have investigated thin film morphology of pentacene thin films by the process of low-pressure gas assisted organic vapor deposition (LP-GAOVD). Source temperature, inert gas flow rate, substrate temperature and deposition pressure during film deposition is used to vary the growth rate, thin film morphology and the crystalline grain size of pentacene thin films. The electrical properties of pentacene thin films for applications in organic thin film transistor and electrophoretic displays will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.531-534
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• 2002

NiO buffer layers for YBCO coated conductors were deposited on hi-axially textured Ni substrates by MOCVD(metal organic chemical vapor deposition) method, using single solution source. To establish the processing condition, oxygen partial pressure and deposition temperature were changed. The surface orientation and degree of texture were estimated by X-ray diffraction, X-ray pole figure and atomic force microscopy. The FWHMs of in-plane and out-of-plane of the NiO films were about 10$^{\circ}$. The surface roughness was a function of deposition temperature. The AFM surface roughness of NiO films is in the range of 3∼10 nm, when NiO films was grown at 450∼530$^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.5 no.1
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• pp.77-84
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• 1996

Silicon deposition by Penning discharge was carried out using a mixture of 5% $SiH_4/H_2$ and Ar gas, and the effects of the deposition conditions(gas mixing raito, substrate temperature. discharge power etc.) on the growth rate, crystallinity and morphology of the films deposited were investigated. The magnetic field(800 G) confined the plasma in the region between the two cathodes and enhanced the discharge current by a factor of a few hundreds below 1 mTorr. The magnetic field-enhanced plasma density resulted in a very large deposition rate of about 300 $\AA$/min at $SiH_4$ flow rate of 0.7 sccm and the substrate temperature of $800^{\circ}C$. Characterization of the films by Raman spectroscopy, X-ray diffraction, and scanning electron microscopy revealed that an epitaxial film with a smooth surface grows above 80$0^{\circ}C$, an amorphous film below $400^{\circ}C$, and a rough polycrystalline film at intermediate temperatures.