Transactions of the Korean Society of Mechanical Engineers B (대한기계학회논문집B)

The Korean Society of Mechanical Engineers (대한기계학회)
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Analysis of Radiative Heat Transfer and Mass Transfer During Multi-Wafer Low Pressure Chemical Vapor Deposition Process

저압 증기 화합물 증착 공정에서 복사열전달 및 물질전달 해석

  • 박경순 (LG전선) ;
  • 최만수 (서울대학교 기계항공공학부, 정밀기계설계 공동연구소, 나노입자제어기술 연구단) ;
  • 조형주 (서울대학교 대학원 기계공학과)
  • Published : 2000.01.01
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Abstract

An analysis of heat and mass transfer has been carried out for multi-wafer Low Pressure Chemical Vapor Deposition (LPCVD). Surface radiation analysis considering specular radiation among wafers, heaters, quartz tube and side plates of the reactor has been done to determine temperature distributions of 150 wafers in two dimensions. Velocity, temperature and concentration fields of chemical gases flowing in a reactor with multi-wafers have been then determined, which determines Si deposition growth rate and uniformity on wafers using two different surface reaction models. The calculation results of temperatures and Si deposition have been compared and found to be in a reasonable agreement with the previous experiments.

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References

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