• Title/Summary/Keyword: Deposition system

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Charging Characteristics of Electrostatic Sprayer Applied Square Pulse (구형파 펄스를 인가한 정전분무 장치의 대전량 특성)

  • 박승록;문재덕
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.12
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    • pp.573-578
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    • 2003
  • In this study, new type of induction charging system for electrostatic spraying was manufactured and proposed to improve the electrical safety and charging efficiency. And parameters of proposed system to generate the maximum deposition current with electrical safety were selected and investigated. The selected parameters were frequency of square pulse and thickness of insulation material, outer diameter of device and thickness and positions of electrode. Charging quantity of water drop was measured by deposition current detected from sensing plate indirectly. The maximum deposition current for each parameter were 3.5[uA] at the frequency of 15[kHz] and thickness of 0.25[mm] insulating layer. And maximum deposition currents were 2.8[uA] and 3.0[uA] at 25[mm] outer diameter of charging device and 0.25[mm] thickness of electrode each. Effects of electrode position from spraying nozzle on deposition current was a little.

Development of a new deposition system for a 12m long YBCO coated conductor (12m 길이의 YBCO 초전도선재 개발을 위한 새로운 증착방법)

  • Lee, Byoung-Su;Kim, Ho-Sup;Youm, Do-Jun
    • 한국초전도학회:학술대회논문집
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    • v.9
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    • pp.319-321
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    • 1999
  • To solve the problems in the present ree1-to-reel deposition method, we have developed a new deposition system for a 12m long YBCO coated conductor. The system comprises two chambers, a reaction chamber and a evaporation chamber which are connected through window. A tan long fi tape textured by RABiTS was wound around a cylinderical sample holder of 20cm diameter. The cylinder was rotated in the reaction chamber during deposition of YBCO film by coevaporation. We'll describe the details of the performance of this system as well as the RABiTS process for a 12m long Ni tape.

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Film Coating and Micro - Pattering Process of Nano-particle Conductive Ink System by Using ESD Method

  • Yang, Jong-Won;Jo, Sang-Hyeon;Sin, Na-Ri;Kim, Jin-Yeol
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.238.1-238.1
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    • 2011
  • 본 연구에서는 non-contact deposition method의 일환인 ESD (electroctatic deposition)의 박막공정을 이용하여 Conductive layer 위에 Gold nanoparticles 및 Silver nanoparticles 등 organic/inorganic nano particle conductive ink system의 단분산 2D 박막을 제조를 연구하였다. ESD head를 통해 여러가지 organic / inorganic nano particle conductive ink system을 Deposition하였으며 분산도가 높고 균일한 단분산의 2차원 박막 구조를 얻을 수 있었으며, 전도성 PEDOT과의 Hybridization을 통해 균일상의 표면 Morphology를 갖는 고 전도성 투명 필름을 제작하였다. ESD technique를 이용하는 박막공정 기술은 나노입자 및 나노구조물의 박막화 패턴화를 포함하는 새로운 Deposition 기술로써 이를 응용하여 금속 나노입자의 2차원의 패턴화된 박막 구현을 통해 유기반도체 및 전자소자에의 응용성을 증거할 수 있었다.

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A Study on the Abnormal Oxidation of Stacked Capacitor due to Underlayer Dependent Nitride Deposition (질화막 성장의 하지의존성에 따른 적층캐패시터의 이상산화에 관한 연구)

  • 정양희
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.1
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    • pp.33-40
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    • 1998
  • The composite SiO$_2$/Si$_3$N$_4$/SiO$_2$(ONO) film formed by oxidation on nitride film has been widely studied as DRAM stacked capacitor multi-dielectric films. Load lock(L/L) LPCVD system by HF cleaning is used to improve electrical capacitance and to scale down of effective thickness for memory device, but is brings a new problem. Nitride film deposited using HF cleaning shows selective deposition on poly silicon and oxide regions of capacitor. This problem is avoidable by carpeting chemical oxide using $H_2O$$_2$cleaning before nitride deposition. In this paper, we study the limit of nitride thickness for abnormal oxidation and the initial deposition time for nitride deposition dependent on underlayer materials. We proposed an advanced fabrication process for stacked capacitor in order to avoid selective deposition problem and show the usefulness of nitride deposition using L/L LPCVD system by $H_2O$$_2$cleaning. The natural oxide thickness on polysilicon monitor after HF and $H_2O$$_2$cleaning are measured 3~4$\AA$, respectively. Two substrate materials have the different initial nitride deposition times. The initial deposition time for polysilicon is nearly zero, but initial deposition time for oxide is about 60seconds. However the deposition rate is constant after initial deposition time. The limit of nitride thickness for abnormal oxidation under the HF and $H_2O$$_2$cleaning method are 60$\AA$, 48$\AA$, respectively. The results obtained in this study are useful for developing ultra thin nitride fabrication of ONO scaling and for avoiding abnormal oxidation in stacked capacitor application.

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Comparison between Bi-superconducting Thin Films Fabricated by Co-Deposition and Layer-by-Layer Deposition

  • Yang, Sung-Ho;Park, Yong-Pil
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.9
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    • pp.796-800
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    • 2000
  • Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{y}$(n$\geq$0; BSCCO) thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.on.n.

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Comparison between BSCCO Thin Films Fabricated by Co-Deposition and Layer-by-Layer Deposition

  • Lee, Hee-Kab;Park, Yong-Pil;Lee, Joon-Ung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.230-234
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    • 2000
  • Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{y}$(n$\geq$0; BSCCO)thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-law growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.on.n.

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Numerical Investigation on Wall Flow Control for Preventing Contaminants Deposition inside a Duct (덕트 내 오염물질 퇴적 방지를 위한 벽면유동 제어에 관한 해석적 연구)

  • Lee, Banguk;Lee, Jeekeun
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.25 no.5
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    • pp.261-268
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    • 2013
  • Technologies for preventing contaminants deposition are a key issue in a modern duct system. When particulate matters deposit inside the exhaust pipes, which are widely used in the Urea-SCR system to reduce $NO_x$ emission from heavy duty diesel engines, many problems arise associated with increased flow resistance and corrosion. Therefore, the development of the urea deposition avoidance technologies is being treated as an important issue of the Urea-SCR system. An analytical study was carried out to investigate the effects of the wall flow around the mixer with the variation of the mixer housing surrounding and supporting the mixer, which is designed to increase the wall flow and then to reduce droplet deposition. The housing angles and the position of the mixer were changed:angles of $0^{\circ}$, $1^{\circ}$, $2^{\circ}$, and $3^{\circ}$, and mixer positions of 0 L, 0.5 L, and 1 L. The axial velocity distributions, maximum velocity, the half-width, and momentum distribution of the wall flow were investigated to examine the effect of the mixer-housing assembly geometry.

Effect Analysis in Laser Metal Deposition of SKD61 by Track Pitch (트랙 이행거리에 따른 SKD61 재질의 레이저 메탈 디포지션 기초 특성 분석)

  • Kim, Won-Hyuck;Jung, Byung-Hun;Oh, Myeong-Hwan;Choi, Seong-Won;Kang, Dae Min
    • Journal of Power System Engineering
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    • v.18 no.5
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    • pp.94-99
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    • 2014
  • In this study, AISI M2 powder was selected primarily through various literature in order to improve the hardness and wear resistance. Among the laser metal deposition parameters, laser power was studied to improve the deposition efficiency in the laser metal deposition using a diode pumped disk laser. SKD61 hot work steel plate and AISI M2 powder were used as a substrate and powder for laser metal deposition, respectively. Fixed parameters are CTWD, focal position, travel speed, powder feed rate, etc. Experiments for the laser metal deposition were carried out by changing laser power. Through optical micrographs analysis of cross-section in LMD track, effect of the major parameters were predicted by track pitch. As the track pitch increased, so the reheated zone width, the overlap width and the minimum thickness was decreased. The hardness was decreased in the HAZ area, the hardness in the reheated HAZ area was decreased significantly and regularly in particular.

Deposition and Optimization of Al-doped ZnO Thin Films Fabricated by In-line Sputtering System (인라인 스퍼터를 이용한 알루미늄 도핑된 산화아연 박막의 증착 및 특성 최적화 연구)

  • Kang, Dong-Won
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.66 no.8
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    • pp.1236-1241
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    • 2017
  • We deposited Al-doped ZnO (ZnO:Al) thin films on glass substrates ($200mm{\times}200mm$) by using in-line magnetron sputtering system. Effects of various deposition parameters such as working pressure, deposition power and substrate temperature on optoelectronic characteristics including surface-texture etching profiles were carefully investigated in this study. We found that relatively low working pressure and high deposition power offered to obtain enhanced conductivity and optical transmittance. Haze properties showed similar trend with the transmittance. Furthermore, surface-texture etching study exhibited good morphologies when the films were deposited at $200-300^{\circ}C$. On the basis of these optimizations, we could find the deposition region that produces highly transparent and conductive properties including efficient light scattering capability.

COMPUTATIONAL ANALYSIS FOR IMPROVING UNIFORMITY OF $SNO_2$ THIN FILM DEPOSITION IN AN APCVD SYSTEM ($SnO_2$ 박막증착을 위한 APCVD Reactor 내 유량 균일도 향상에 대한 수치 해석적 연구)

  • Park, J.W.;Yoon, I.R.;Chung, H.S.;Shin, S.W.;Park, S.H.;Kim, H.J.
    • 한국전산유체공학회:학술대회논문집
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    • 2010.05a
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    • pp.567-570
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    • 2010
  • With continuously increasing flat panel display size, uniformity of thin film deposition has been drawing more attentions and associated fabrication methodologies are being actively investigated. Since the convective flow field of mixture gas plays a significant role for deposition characteristics of thin film in an APCVD system, it is greatly important to maintain uniform distribution and consistent concentration of mixture gas species. In this paper, computational study has been performed for the improvement of flow uniformity of mixture gas in an APCVD reactor during thin film deposition process. A diffuser slit has bee designed to spread the locally concentrated gas flow exiting from the flow distributor. A uniform flow distributor has been developed which has less dependency on operating conditions for global flow uniformity

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