• Journal of Radiation Protection and Research
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• v.23 no.4
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• pp.251-257
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• 1998

A diffusion model of radioactive gaseous effluents is improved to apply for domestic nuclear power plants. Up to now, XOQDOQ computer code package developed by U. S NRC has been used for the assessment of radioactive plume dispersion by normal operation of domestic nuclear power plants. XOQDOQ adopts the straight-line Gaussian plume model which was basically derived for the plane terrain. However, since there are so many mountains in Korea, the several shortcomings of XOQDOQ are improved to consider the complex terrain effects. In this work, wind direction change is considered by modifying the wind rose frequency using meteorological data of the local weather stations. In addition, an effective height correction model, a plume reduction model due to plume penetration into mountain, and a wet deposition model are adopted for more realistic assessments. The proposed methodology is implemented in Yongkwang nuclear power plants, and can be used for other domestic nuclear power plants.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.263-274
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• 1996

Titanium dioxide ($TiO_{2}$) film has been widely used as anti-reflection coating for solar cells but not as masking oxide for metallisation and diffusion of impurities. In this paper we have investigated the properties of $TiO_{2}$ for possible incorporation into solar cell processing sequence. Thus the use of a spray deposition system to form the $TiO_{2}$ film and the characterisation of this film to ascertain its suitability to solar cell processing. The spray-on $TiO_{2}$ film was found to be resistant to all the chemicals used in conjunction with solar cell processing. The high temperature anealing (in oxygen ambient) of the spray-on $TiO_{2}$ film resulted in an increased refractive index, which indicated the growth of an underlying thin film of $SiO_{2}$ film for the passivation of silicon surface which would reduce the recombination activities of the fabricated device. Most importantly, the successful incorporation of the $TiO{2}$ film will lead to the reduction of the many high temperature processing steps of solar cell to only one.

• Journal of the Korean Magnetics Society
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• v.3 no.2
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• pp.87-93
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• 1993

Iron nitride (Fe-N) magnetic thin films were deposited using a DC magnetron sputtering system. Microstructures and magnetic properties were examined as a function of deposition power and nitrogen gas input ratio. The nitrogen content in the film was found to be the major factor determining the microstructure and the magnetic properties. The films deposited at low nitrogen input ratios have an $\alpha$-Fe structure of which the lattice is expanded due to the nitrogen atoms incorporated at the interstitial sites. As the nitrogen content in the film increases, the degree of lat-tice expansion increases and the value of saturation magnetization decreases linearly. The films with a high degree of lattice expansion give very low values of coercivity, which is attributed to the disturbance of colunmar growth and the decrease of surface roughness. Further increase in the nitrogen input ratio causes the phase transfonnation from $\alpha$-Fe to $Fe_{2-3}N$, resulting in the marked reduction in the saturation magnetization. The phase transformation occurs when, regardless of deposition conditions, the nitrogen content reaches at 15 at.% and the lattice is expanded by 5%.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.328-333
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• 1998

Lattice-matched InAIAs epilayers were grown on (001) InP substrate by low pressure metalorganic chemical vapor deposition. The effects of growth conditions on the properties of InAIAs were analyzed, and InGaAs/InAIAs single and multiple quantum wells were successfully grown. It was observed that the optical property of InAIAs epilayers was improved in the temperature range of 620~$700^{\circ}C$ as the growth temperature increased due to the reduction of oxygen incorporation, however, the crystallinity decreased at temperatures higher than $750^{\circ}C$ due to the degraded crystallinity of the bufter layers. The enhanced incorporation of AI into epilayer was observed at high $AsH_3$flow rates and it was explained in terms of the differences in bond strengths of AI-As and In-As. The measured photoluminescence peak energies from InGaAs/InAIAs single quantum wells were consistent with the calculated ones based on transfer matrix method. High-order satellite peaks and fine thickness fringes were observed by high-resolution x-ray diffraction, implying that the high-quality multiple quantum wells with abrupt heterointerfaces were grown.

• Transactions of the Korean hydrogen and new energy society
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• v.21 no.1
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• pp.50-57
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• 2010

Stepwise production of syn-gas and hydrogen from methane on ferrite based media added with yttria-stabilized zirconia (YSZ) was carried out using a fixed bed infrared reactor. In this study, all M-ferrite (M=Co, Cu, Mn and Ni) media were prepared by co-precipitation method, and there the YSZ was added as a binder to improve thermal stability, reactivity, and resistance against carbon deposition. Most of the ferrite media containing YSZ showed the good redox property for temperature programmed reduction/oxidation (TPR/O) tests. Notably, the Cu-substituted ferrite medium with YSZ showed the great resistance against carbon deposition as well as the good reactivity for the stepwise production of syngas and hydrogen. Furthermore, it also showed the good durability without significant deactivation during five repeated cyclic tests.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.414-423
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• 2016

In the present study, the $CuN_x-Cu-CuN_x$ layer the partial pressure ratio Cu metal of Ar and $N_2$ gas using a DC magnetron sputtering device, was generated by the In-situ method. $CuN_x$ layer was able to obtain a surface reflectance reduction effect from the advantages of the process and the external light. $CuN_x$ layer is gas partial pressure, DC the Power, the deposition time variable transmittance in response to the thickness and partial pressure ratio, the reflectance was measured. $Ar:N_2$ gas ratio 10:10(sccm), DC power 0.35 A, was derived Deposition time 90 sec optimum conditions. Thus, according to the optimal thickness and the composition ratio was derived surface reflectance of 20.75%. In addition, to derive the value of ${\Delta}$ Ra surface roughness of 0.467. It was derived $CuN_x$ band-gap energy of about 2.2 eV. Thus, to ensure a thickness and process conditions can be absorbed to maximize the light in a wavelength band in the visible light region. As a result, the implementation of the $12k{\Omega}$ base line resistance of using the Cu metal. This is, 5 inch Metal mesh TSP(L/S: $4/270{\mu}m$) is in the range of the reference operation.

• Journal of computational fluids engineering
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• v.18 no.3
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• pp.67-71
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• 2013

Recently, the rapid development of the semiconductor industry induces the prompt technical progress in the area of device integration and the application of large diameter wafers for the price competitiveness. As a result of the usage of large wafers in the semiconductor industry, the silicon carbide components which have layers of silicon carbide on graphite or RBSC substrates is getting widely used due to the advantages of SiC such as high hardness and strength, chemical and ionic resistant to all the environments superior than other ceramic materials. For the uniform and homogeneous deposition of silicon carbide on these huge components, it needs to know about the gas flow in the CVD reactor, not only for the delicate adjustment of the process variables but more essentially for the cost reduction for the shape change of specimens and their holders on the stage of reactor. In this research, the CFD simulation is challenged for the prediction of the inner distribution of the gas velocity. Chemical reaction simulation is used to predict the distribution of concentration of the reacting gas with the rotating velocity of the stage. With the increase of the rotating speed, more uniform distribution of the reacting gas on the surface of the stage was obtained.

• Journal of the Korean institute of surface engineering
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• v.27 no.2
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• pp.65-73
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• 1994

Effects of deposition parameter on the ionic conductivity and structural change of the Lithium borosili-cate solid electrolyte films, prepared by rf sputtering using 7$LI_2O-3B_2O_3-1SiO_2$ single phase target and also a mosaic target enriched with $LI_2O$, were analyzed by measuring AC impedance and IR absorption spectra for the films. Thed solid electrolyte film deposited from the single phase target exhibited very low ionic conductivi-ty of $10^{-10}{\Omega}^{-1}cm{-1}$ at room temperature, a result of low $Li^+$ ion content(7.52 at%) in the film. The $Li^+$ con-ductivity for the films deposited from the mosaic target, however, significantly increased to $10^{-7}{\Omega}^{-1}cm{-1}$ due to both an increased $Li^+$content (14.75 at %) and a structural change of the films. The increased ionic conduc-tivity of the film appears to be associated with an easiness of ionic mobility by structural change of glassy film from a some close packed network structure to a open one. These structural changes of film were found to be closely related to the increase in the peak intensity at~$960cm^{-1}$ of IR absorption spectra for the glassy films. With increasing either argon pressure from 3 to 21 mtorr or rf power from 2 to 3 W/$cm^2$, the $Li^+$ conduc-tivity for the films significantly increased to an order of $10^{-6}{\Omega}^{-1}cm{-1}$ due to an increase in openness of film structure, as confirmed by both an increase in the IR absorption peak intensity at ~$960cm^{-1}$ and a resultant reduction of activation energy for mobility of $Li^+$ ion.

• Applied Chemistry for Engineering
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• v.17 no.6
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• pp.586-590
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• 2006

As one of electro active polymers for soft smart materials, the ionic polymer metal composites (IPMC) are easy to produce through chemical reduction processing and show high displacements at low voltage. When the IPMC actuates, the deformation depends on a few factors including the structure of based membrane, species and morphology of the metal electrodes, the nature of cations and the level of hydration. As previously published, we have been studying on improvement of actuation through surface electrode modification of IPMC to grasp the effect of electrode morphology on actuation. This study is comparative experiments through the chemical reaction and deposition by ion beam assisted deposition (IBAD) in order to prepare the very thin and homogeneous surface electrode of IPMC. The IPMCs were prepared with different surface roughness of polymer membrane, and the influence of the surface roughness on the actuation was studied. By investigating the electrical properties and driving displacement, the actuating properties of IPMC with different surface roughness were studied.

• Applied Chemistry for Engineering
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• v.16 no.4
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• pp.563-569
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• 2005

In a direct sea water electrolysis system, deposits on the electrode cause decrease in the performance and increase in electrode damage. To reduce the deposition on the electrode, the modified cells were developed, namely: replaced grating type anodes with plate type ones; reduced the number of anodes from 9 to 8; widened the electrode gap from 2.4 mm to 3.0 mm; and reduced the number of spacers. that maintained the electrode gap, from 27 to 10. The developed cells were installed and tested at a power plant. The modified cells reduced deposition by 36~60%. The current efficiency increased by 15~20%. The electricity consumption reduced by 20%. In each case, the comparisons were between the modified cells and standard cells.