• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.10a
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• pp.40-44
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• 2000

$Bi_2Sr_2Ca_nCu_{n+1}O_y$($n{\geq}0$; BSCCO)thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.3
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• pp.135-145
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• 2011

Accurate process characterization and optimization are the first step for a successful advanced process control (APC), and they should be followed by continuous monitoring and control in order to run manufacturing processes most efficiently. In this paper, process characterization and recipe optimization methods with multiple outputs are presented in high density plasma-chemical vapor deposition (HDP-CVD) silicon dioxide deposition process. Five controllable process variables of Top $SiH_4$, Bottom $SiH_4$, $O_2$, Top RF Power, and Bottom RF Power, and two responses of interest, such as deposition rate and uniformity, are simultaneously considered employing both statistical response surface methodology (RSM) and neural networks (NNs) based genetic algorithm (GA). Statistically, two phases of experimental design was performed, and the established statistical models were optimized using performance index (PI). Artificial intelligently, NN process model with two outputs were established, and recipe synthesis was performed employing GA. Statistical RSM offers minimum numbers of experiment to build regression models and response surface models, but the analysis of the data need to satisfy underlying assumption and statistical data analysis capability. NN based-GA does not require any underlying assumption for data modeling; however, the selection of the input data for the model establishment is important for accurate model construction. Both statistical and artificial intelligent methods suggest competitive characterization and optimization results in HDP-CVD $SiO_2$ deposition process, and the NN based-GA method showed 26% uniformity improvement with 36% less $SiH_4$ gas usage yielding 20.8 ${\AA}/sec$ deposition rate.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.39 no.7
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• pp.692-701
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• 1990

New selective tungsyen deposition deposition on silicon process is described which makes use of a previously unreported, alternating cyclic,

• Journal of the Korean Ceramic Society
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• v.52 no.5
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• pp.315-319
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• 2015

Yttria-stabilized zirconia (YSZ)-based micro tubular SOFC single cells were fabricated by electrophoretic deposition (EPD) process. Stable slurries for the EPD process were prepared by adding phosphate ester (PE) as a dispersant in order to control the pH, conductivity, and zeta-potential. NiO-YSZ anode support, NiO-YSZ anode functional layer (AFL), and YSZ electrolyte were consecutively deposited on a graphite rod using the EPD process; materials were then co-sintered at $1400^{\circ}C$ for 4 h. The thickness of the deposited layer increased with increasing of the applied voltage and the deposition time. A YSZ-based micro tubular single cell fabricated by the EPD process exhibited a maximum power density of $0.3W/cm^2$ at $750^{\circ}C$.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.47-48
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• 2006

Oridinal thermal spray process has developed into two ways, namely, temperature dominated represented by plasma spraying, and velocity dominated represented by HVOF. It is common for both that the particle materials sprayed are basically in melted or half melted condition. New process has developed recently, that is, Cold Spray and Aerosol Deposition. Particle's heating is limited in CS lower than half of the material's melting point. Moreover, exactly no heating is loaded in AD process. Through the investigation on common feature for these three spraying processes, potential of new material process - Particle Deposition, PD - is considered and proposed.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.23.2-23.2
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• 2009

Atomic layer deposition (ALD)have been proven to be a very attractive technique for the fabrication of advanced gate dielectrics and DRAM insulators due to excellent conformality and precise control of film thickness and composition, However, one major disadvantages of ALD is its relatively low deposition rate (throughput) because the deposition rate is typically limited by the time required for purging process between the introduction of precursors. In order to improve its throughput, many efforts have been made by commercial companies, for example,the modification reactor and development of precursors. However, any promising solution has not reported to date. We developed a new concept ALD system(Lucida TM S200) with high-throughput. In this process, a continuous flow of ALD precursor and purging gas are simultaneously introduced from different locations in the ALD reactor. A cyclic ALD process is carried out by moving the wafer holder up and down. Therefore, the time required for ALD reaction cycle is determined by speed of the wafer holder and vapor pressure of precursors. We will present the operating principle of our system and results of deposition.

• Proceedings of the Korean Ceranic Society Conference
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• 1986.12a
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• pp.211-225
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• 1986

Silicon carbide coating has been studied using a graphite substrate, a mixture of tetramethylsilane and hydrogen or argon at deposition temperature (T) of 950 to $1200^{\circ}C$ total pressure of 20 to 50 torr and carrier gas flow rate of 0 to 901/h. Deposition kinetic study has shown that a transition, from a surface reaction limited process to a diffusion limited one, takes place near $1100^{\circ}C$. Deposition rate depends directly upon the experimental parameters. The influence of the main process parameters is also discussed to relate the physiochemical properties of the coating to the deposition conditions.

• Journal of the Korean institute of surface engineering
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• v.23 no.1
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• pp.27-33
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• 1990

Thermodynamic analysis on silicon consumpton during the chemical vapor deposition of tungten was carried out by calculation equilibrium concerations of all possible product species utilizing a computer progrom according to VCS.(Villars-Cruise-Smith) algorithm. The calculation could show various reaction paths which dominate the tungsten deposition under different process conditions. According to the calculation, the consumption of silicon can also be reduced at a lower total pressure SiH4 without H2 as the reacting gas is most effective for suppression of the excessive consumption of silicon during the deposition process.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.11a
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• pp.77-78
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• 2010

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.218-218
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• 2011

The CIGS Solar Cells have the highest conversion efficiency in the film-type solar cells. They consist of p-type CuInSe2 film and n-type ZnO film. The CdS films are used as buffer layer in the CIGS solar cells since remarkable difference in the lattice constant and energy band gap of two films. The CdS films are toxic and make harmful circumstances. The CdS films deposition process need wet process. In this works, we design and make the hitter and lamp reflection part in the sputtering system for the ZnS films deposition as buffer layer, not using wet process. Film thickness, SEM, and AFM are measured for the uniformity valuation of the ZnS films. We conclude the optimum deposition temperature for the films uniformity less than 1.6%. The ZnS films deposited by the sputtering system are more dense and uniform than the CdS films deposited by the Chemical Bath Deposition Method(CBD) for the CIGS Solar Cells.