• Advances in nano research
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• v.12 no.2
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• pp.151-165
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• 2022

Micro-scale serpentine structure fibers are widely used as flexible sensor in the manufacturing of micro-nano flexible electronic devices because of their outstanding non-linear mechanical properties and organizational flexibility. The use of melt electrowriting (MEW) technology, combined with the axial bending effect of the Taylor cone jet in the process, can achieve the micro-scale serpentine structure fibers. Due to the interference of the process parameters, it is still challenging to achieve the precise deposition of micro-scale and high-consistency serpentine structure fibers. In this paper, the micro-scale serpentine structure fiber is produced by MEW combined with axial bending effect. Based on the controlled deposition of MEW, applied voltage, collector speed, nozzle height and nozzle diameter are adjusted to achieve the precise deposition of micro-scale serpentine structure fibers with different morphologies in a single motion dimension. Finally, the influence mechanism of the above four parameters on the precise deposition of micro-scale serpentine fibers is explored.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.980-986
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• 2009

In a triple-layered structure of ITO/N,N'-diph enyl-N,N'bis(3-methylphenyl)-1,1' - biphenyl-4,4'-diamine(TPD)/tris(8-hydroxyquinoline)aluminum($Alq_3$)/(2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline(BCP)/Al device, we have studied the electrical and optical characteristics of organic light-emitting diodes(OLEDs) depending on the deposition condition of BCP layer. Several different sizes of holes on boat and several different deposition rates were employed in evaporating the organic materials. And then, electrical properties of the organic light-emitting diodes were measured and the performance of the devices was analyzed. It was found that the hole-size of crucible boat and the evaporation rate affect on the surface roughness of BCP layer as well as the performance of the device. When the hole-size of crucible boat and the deposition rate of BCP are 1.2 mm and $1.0\;{\AA}/s$, respectively, average surface roughness of BCP layer is lower and the efficiency of the device is higher than the ones made with other conditions. From the analysis of current density-luminance-voltage characteristics of a triple layered device, we divided the conductive mechanism by four region according to applied voltage. So we have obtained a coefficient of ${\beta}_{ST}$ in schottky region is $3.85{\times}10^{-24}$, a coefficient of ${\beta}_{PF}$ in Poole-Frenkel region is $7.35{\times}10^{-24}$, and a potential barrier of ${\phi}_{FN}$ in Fower-Nordheim region is 0.39 eV.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.351-352
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• 2012

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.312.1-312.1
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• 2016

We have deposited ZnO thin films by ultraviolet (UV) enhanced atomic layer deposition using diethylznic (DEZ) and water (H2O) as precursors with UV light. The atomic layer deposition relies on alternating dose of the precursor on the surface and subsequent chemisorption of the precursors with self-limiting growth mechanism. Though ALD is useful to deposition conformal and precise thin film, the surface reactions of the atomic layer deposition are not completed at low temperature in many cases. In this experiment, we focused on the effects of UV radiation during the ALD process on the properties of the inorganic thin films. The surface reactions were found to be complementary enough to yield uniform inorganic thin films and fully react between DEZ and H2O at the low temperature by using UV irradiation. The UV light was effective to obtain conductive ZnO film. And the stability of TFT with UV-enhanced ZnO was improved than ZnO by thermal ALD method. High conductive UV-enhanced ZnO film have the potential to applicability of the transparent electrode.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 2000.06a
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• pp.127-142
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• 2000

The charged cluster model states that chemical vapor deposition (CVD) begins with gas phase nucleation of charged clusters followed by cluster deposition on a substrate surface to form a thin film. A two-chambered CVD system, separated by a 1-mm orifice, was used to study gold deposition by thermal evaporation in order to determine if the CCM applies in this case. At a filament temperature of 1523 and 1773 K, the presence of nano-meter sized gold clusters was found to be positive and the cluster size and size distribution increased with increasing temperature. Small clusters were found to be amorphous and they combined with clusters already deposited on a substrate surface to form larger amorphous clusters on the surface. This work revealed that gold thin films deposited on a mica surface are the result of the sticking of 4-10 nm clusters. The topography of these films was similar to those reported previously under similar conditions.

• Journal of Korean Society for Atmospheric Environment
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• v.12 no.1
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• pp.101-112
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• 1996

Dry and wet deposition is an impertant removal mechanism of the amobient aerosol in the atmospheric environment. Since the deposition flut provides adverse impacts on various encironmental media including aquatic and ecological system as well as human health, it is essential to quantitatively estimate the removal fluxes of many air pollutants. Thus, the purposes of this experimental study are to investigate seasonal deposition flux variations of the total dustfall and various inorganic elements in the local ambient air and then to finally estimate their dry deposition velocities. To perform the study, the total of 90 dustfall samples were collected from January, 1994 thru February, 1995 in 5 different cities of Korea including Seoul, Suwon, Daejon, Kwangju, and Kangrung. Each sample was analyzed by an AAS and an ICP to determine the quantities of the 11 inorganic elements, such as Zn, Cd, Cr, K, Na, Pb, Ca, Fe, Mn, Mi, and Cu. As results, deposition fluxes, soluble/insoluble fractions, and deposition velocities for each element were extensively investigated. The resulting dry deposition velocities of some elements in Suwon were estimated by ranges of 0.57 .sim. 0.87 cm/sec for Zn, 0.35 .sim. 0.45 cm/sec for Pb, 1.25 .sim. 3.52 cm/sec for Ca, 0.21 .sim. 0.48 cm/sec for Fe, 0.95 .sim. 9.31 cm/sec for Mn, and 2.08 cm/sec for Cu.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.326-326
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• 2009

• Transactions of the Korean Society of Mechanical Engineers B
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• v.20 no.8
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• pp.2626-2636
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• 1996

A study of soot deposition and reentrainment was carried out both theoretically and experimentally to understand behavior of soot formed by incomplete combustion in a diesel engine. Theoretically, soot deposition on engine cylinder wall and/or piston head was studied with a stagnation point flow approximation. Soot reentrainment occurred upon exhaust gas blowdown was also studied by assuming a long-normal shear velocity distribution. Experimentally, a LPG$O_2/N_2$ flame impinging on a disk, produced by a concentric tubular burner, was chosen as deposition configuration and a shear flow unit with compressed air was installed for the study of reentrainment. For selected flame configuration, soot deposition measurements were conducted and showed that the dominant deposition mechanism was thermophoresis. Distributions of gas temperature and soot number density were estimated by combining data obtained by a B-type thermocouple with a thermophoretic transport theory. Disk temperature distributions were directly measured using a K-type thermocouple. Soot size and morphology were estimated from a TEM photograph. Ratios of soot deposit to reentrained amount were measured for a wide range of shear flow velocities, which showed that the reentrainment model was reasonable.

• Journal of the Korean Ceramic Society
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• v.45 no.9
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• pp.567-571
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• 2008

The properties of a grown film by the chemical vapor deposition process depend on the deposition temperature because the deposition mechanism of the CVD film is controlled by the deposition temperature. The preferred orientation of the zrC film changed from (111) to (220) or (200) with an increase of the deposition temperature. The grain size of the ZrC film changes from $0.8{\mu}m$ to $2.5{\mu}m$ in the range of 1350 to $1500^{\circ}C$. The hardness of the deposited ZrC film depended on the preferred orientation and the grain size. The hardness of the ZrC film deposited at $1400^{\circ}C$ was 31 GPa.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.438-439
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• 2013

Microelectronic devices의 접촉저항의 향상을 위해 Metal silicides의 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 지난 수십년에 걸쳐, Ti silicide, Co silicide, Ni silicide 등에 대한 개발이 이루어져 왔으나, 계속적인 저저항 접촉 소재에 대한 요구에 의해 최근에는 Rare earth silicide에 관한 연구가 시작되고 있다. Rare-earth silicide는 저온에서 silicides를 형성하고, n-type Si과 낮은 schottky barrier contact (~0.3 eV)를 이룬다. 또한, 비교적 낮은 resistivity와 hexagonal AlB2 crystal structure에 의해 Si과 좋은 lattice match를 가져 Si wafer에서 high quality silicide thin film을 성장시킬 수 있다. Rare earth silicides 중에서 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 낮은 schottky barrier 응용에서 쓰이고 있다. 이로 인해, n-channel schottky barrier MOSFETs의 source/drain으로써 주목받고 있다. 특히 ytterbium과 molybdenum co-deposition을 하여 증착할 경우 thin film 형성에 있어 안정적인 morphology를 나타낸다. 또한, ytterbium silicide와 마찬가지로 낮은 면저항과 electric work function을 갖는다. 그러나 ytterbium silicide에 molybdenum을 화합물로써 높은 농도로 포함할 경우 높은 schottky barrier를 형성하고 epitaxial growth를 방해하여 silicide film의 quality 저하를 야기할 수 있다. 본 연구에서는 ytterbium과 molybdenum의 co-deposition에 따른 silicide 형성과 전기적 특성 변화에 대한 자세한 분석을 TEM, 4-probe point 등의 다양한 분석 도구를 이용하여 진행하였다. Ytterbium과 molybdenum을 co-deposition하기 위하여 기판으로 $1{\sim}0{\Omega}{\cdot}cm$의 비저항을 갖는 low doped n-type Si (100) bulk wafer를 사용하였다. Native oxide layer를 제거하기 위해 1%의 hydrofluoric (HF) acid solution에 wafer를 세정하였다. 그리고 고진공에서 RF sputtering 법을 이용하여 Ytterbium과 molybdenum을 동시에 증착하였다. RE metal의 경우 oxygen과 높은 반응성을 가지므로 oxidation을 막기 위해 그 위에 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, 진공 분위기에서 rapid thermal anneal(RTA)을 이용하여 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium silicides를 형성하였다. 전기적 특성 평가를 위한 sheet resistance 측정은 4-point probe를 사용하였고, Mo doped ytterbium silicide와 Si interface의 atomic scale의 미세 구조를 통한 Mo doped ytterbium silicide의 형성 mechanism 분석을 위하여 trasmission electron microscopy (JEM-2100F)를 이용하였다.