• Korean Journal of Optics and Photonics
• /
• v.9 no.5
• /
• pp.300-306
• /
• 1998

We have studied the optical effects in dielectric multilayer due to the interdiffusion formed during the deposition process. We suggest a numerical method to calculate the optical properties of periodical multilayer thin-films with gradient-index profiles. Using this method the spectral transmittance and reflectance were obtained for Fabry-Perot type filters, broad-band total reflectors and antireflection filters with interdiffusion layers. Interdiffusion reduced the spectral band width of high reflectance in total reflectors, and deteriorated the characteristics of multilayer AR-coatings leading to a large variation of reflectance if the number of the layers is large.

• Proceedings of the KIEE Conference
• /
• 1988.07a
• /
• pp.792-795
• /
• 1988

Titanium dioxide antireflection (AR) Coating, which is deposited on Si substrates using an organotitanium solution by the spinning technique, has been studied. The coated films on Si substrates were subsequently heated to $450^{\circ}C$. The thickness and index of refraction of films were varied continuousely from $740{\AA}$ to $1380{\AA}$ and from 1.7 to 2.1 respectively as a function of heat treatment temperature and time. Silicon solar cells AR-coated by the spinning technique showed as much as 31% improvement in conversion efficiency over the uncoated cell.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2006.05a
• /
• pp.211-215
• /
• 2006

평면 광도파로 코어로 사용되는 SiON (Silicon oxynitride)과 클래딩으로 사용되는 $SiO_2$ (Silicon oxide)의 굴절률 차이가 2.5 %인 고굴절률차 평면 광도파로용 SiON 박막을 PECVD (plasma enhanced chemical vapor deposition)로 제작하였다. PECVD에 사용된 가스는 $SiH_4,\;NH_3,\;N_{2}O$이고, Si 기판의 $SiO_2$ 막은 100 nm이다. 가스의 비율에 따라 SiON 막의 굴절률은 633 nm의 파장에서 1.476에서 1.777까지 변화하였다. 코어로 사용되는 SiON의 두께는 $2.5{\mu}m$이고 클래딩과의 굴절률 차이는 2.5 %였다.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.34D no.6
• /
• pp.50-57
• /
• 1997

TiO$_{2}$ tin films have been grown by MOCVD and their cahracteristics of crystallization and microstructures ahve been invetigated. Envelope mehtods are applied to the analysis of the transmission spectra to obtain the optical constants such as refractive indices and extinction coefficients for the TiO$_{2}$ thin films. The envelope methods are proved to be accurate by simulatin gthe transmission spectra. TiO$_{2}$ thin films start to crystallize at 350.deg.C and then crystallize fully into anatase phase at 400.deg.C or higher temperatures. Activation energies are obtained by plotting the deposition rate with varying the substrate temperature. It is 17.8 kcal/mol for the reaction limited regions. The refractive index and the extinction coefficient of the TiO$_{2}$ thin film at .gamma.=632.8 nm increases from 2.19 to 2.32 and decreases from 0.021 to 0.007, respectively, as the substrate temperature increases from 400 to 600.deg. C.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.200-201
• /
• 2008

태양전지 제작 시 반사방지막(Anti-reflection Coating)이 태양전지 효율에 미치는 영향을 알아보기 위한 실험으로 최적의 가스비를 알아보기 위하여 Plasma Enhanced Chemical Vapor Deposition(PECVD)를 이용한 Silicon nitride 증착 실험이다. SiH4 가스를 45 sccm으로 고정시킨 상태에서 NH3를 25,45,60,90,135 sccm으로 가변하여 Carrier Lifetime과 Refractive index를 측정하였다. PECVD의 조건은 기판온도 $450^{\circ}C$, Chamber 압력 1 Torr, 증착두께 $1000\AA$으로 고정하였다. 증착 후 500, 600, 700, $800^{\circ}C$로 열처리를 하고나서 Carrier Lifetime을 측정하여 열처리에 대한 효과도 알아보았다.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2003.12a
• /
• pp.130-135
• /
• 2003

Low dielectric constant SiOC(-H) films have been prepared by inductively coupled plasma chemical vapor deposition using bis-trymethylsilyl-methane (BTMSM) and $O_2$ precursors. The annealing effects on the structural and electrical properties were studied. The results indicate post-annealing could efficiently remove the hydroxyl (-OH) related groups from the as-deposited films and cause the chemical structure re-arrangement, resulting in the more nano-pores being formed in the annealed SiOC(-H) films. The dielectric constant decreased from 2.7 to 2.1, and the refractive index decreased from 1.427 to 1.32.

• Proceedings of the KIEE Conference
• /
• 1993.07b
• /
• pp.1189-1192
• /
• 1993

Organic thin films were fabricated an using interelectrode capacitively coupled type plasma polymerizaion apparatus, and their optical properties were investigated. A deposition rate of styrene thin films is linearly increased, but one or vinyl-pyridine thin films is nonlinearly increased with increasing of polymerization time, pressure and monomer flow rate. The transmittance of single layer thin films is constant, but that of multi-layer appeared irregular peak with increasing of the number of layers. And then the refractive index of organic thin films is various from 1.55 to 1.65 with wavelength, the extinction coefficient indicated $10^{-3}$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.300.1-300.1
• /
• 2013

반사방지막 코팅(Anti-reflection coating)은 태양전지(Solar cell), 발광다이오드(LED) 등의 반사율을 낮추어 효율을 증대시키기 위하여 사용되고 있다. 본 실험에서는 유리 기판 위에 실리콘 타겟을 이용한 Reactive magnetron sputtering 장비를 활용하여, 50~100 mTorr의 높은 공정 압력(High pressure)에서 증착하여 SiO2 반사방지막 코팅층을 형성하였다. Ellipsometer를 이용하여 SiO2 박막층의 굴절률(Refractive index)을 측정한 결과, 공정 압력에 따라 SiO2 박막이 다양한 굴절률을 가지는 것을 확인할 수 있었다. 또한, UV-Vis spectrometer를 이용하여, 450~600 nm 파장에서의 반사율(Reflectance)과 투과율(Transmittance)을 측정하여 비교, 분석하였다. 나아가 증착된 SiO2 반사방지막을 비정질 실리콘 박막 태양전지에 적용하여 효율 향상 효과를 실험하였다. 이를 활용하여 낮은 굴절률을 갖는 반사방지용 SiO2 코팅층을 형성하여 태양전지의 광 변환 효율을 상승 시킬 수 있고, 발광다이오드의 광 추출 효율을 증가시킬 있을 것으로 여겨진다.

• Current Applied Physics
• /
• v.18 no.11
• /
• pp.1436-1440
• /
• 2018

SiN and SiCN film production using plasma-enhanced atomic layer deposition (PE-ALD) is investigated in this study. A developed high-power and high-density multiple inductively coupled plasma (multi-ICP) source is used for a low temperature PE-ALD process. High plasma density and good uniformity are obtained by high power $N_2$ plasma discharge. Silicon nitride films are deposited on a 300-mm wafer using the PE-ALD method at low temperature. To analyze the quality of the SiN and SiCN films, the wet etch rate, refractive index, and growth rate of the thin films are measured. Experiments are performed by changing the applied power and the process temperature ($300-500^{\circ}C$).

• Korean Journal of Materials Research
• /
• v.24 no.10
• /
• pp.543-549
• /
• 2014

A zinc oxide (ZnO) hybrid structure was successfully fabricated on a glass substrate by metal organic chemical vapor deposition (MOCVD). In-situ growth of a multi-dimensional ZnO hybrid structure was achieved by adjusting the growth temperature to determine the morphologies of either film or nanorods without any catalysts such as Au, Cu, Co, or Sn. The ZnO hybrid structure was composed of one-dimensional (1D) nanorods grown continuously on the two-dimensional (2D) ZnO film. The ZnO film of 2D mode was grown at a relatively low temperature, whereas the ZnO nanorods of 1D mode were grown at a higher temperature. The change of the morphologies of these materials led to improvements of the electrical and optical properties. The ZnO hybrid structure was characterized using various analytical tools. Scanning electron microscopy (SEM) was used to determine the surface morphology of the nanorods, which had grown well on the thin film. The structural characteristics of the polycrystalline ZnO hybrid grown on amorphous glass substrate were investigated by X-ray diffraction (XRD). Hall-effect measurement and a four-point probe were used to characterize the electrical properties. The hybrid structure was shown to be very effective at improving the electrical and the optical properties, decreasing the sheet resistance and the reflectance, and increasing the transmittance via refractive index (RI) engineering. The ZnO hybrid structure grown by MOCVD is very promising for opto-electronic devices as Photoconductive UV Detectors, anti-reflection coatings (ARC), and transparent conductive oxides (TCO).