• Korean Journal of Soil Science and Fertilizer
• /
• v.49 no.6
• /
• pp.669-676
• /
• 2016

A field study was conducted to determine the runoff loss of N and P in small scale of red pepper field plots (10% slope), consisting of three different plots with black polyethylene vinyl mulching (mulching), ridge without mulching (ridge), and flat without ridge and mulching (flat). Composted manure and urea as a basal application were applied at rates of $20MT\;ha^{-1}$ and $93kg\;N\;ha^{-1}$, respectively. Urea at $189kg\;N\;ha^{-1}$ and fused phosphate at $67kg\;P_2O_5\;ha^{-1}$ were additionally applied on June 25 with different fertilization methods, broadcast application in flat plot and hole injection in ridge and mulching plots. Plant uptake of N and P was positively correlated with their respective concentrations in surface soil: mulching > ridge > flat plots. The runoff loss by soil erosion was higher in flat plot than ridge and mulching plot with contour line. Nitrate loss by the runoff water had no significant differences among three surface management practices, but the higher average value in ridge and mulching plots than flat plot. Especially, the flat plot had no phosphate loss during summer season. This is probably due to low labile P content in surface soil of flat plot. In the summation of soil and water loss, flat plot was higher in N and P loss than ridge and mulching plot with contour line. Nevertheless, the nitrate and phosphate loss by runoff water could be more important for non-point source management because the water could meet the river easier than eroded soil because of re-deposition around slope land.

• Journal of the Korea Institute of Military Science and Technology
• /
• v.1 no.1
• /
• pp.227-237
• /
• 1998

HgCdTe Is the most versatile material for the developing infrared devices. Not like III-V compound semiconductors or silicon-based photo-detecting materials, HgCdTe has unique characteristics such as adjustable bandgap, very high electron mobility, and large difference between electron and hole mobilities. Many research groups have been interested in this material since early 70's, but mainly due to its thermodynamic difficulties for preparing materials, no single growth technique is appreciated as a standard growth technique in this research field. Solid state recrystallization(SSR), travelling heater method(THM), and Bridgman growth are major techniques used to grow bulk HgCdTe material. Materials with high quality and purity can be grown using these bulk growth techniques, however, due to the large separation between solidus and liquidus line on the phase diagram, it is very difficult to grow large materials with minimun defects. Various epitaxial growth techniques were adopted to get large area HgCdTe and among them liquid phase epitaxy(LPE), metal organic chemical vapor deposition(MOCVD), and molecular beam epitaxy(MBE) are most frequently used techniques. There are also various types of photo-detectors utilizing HgCdTe materials, and photovoltaic and photoconductive devices are most interested types of detectors up to these days. For the larger may detectors, photovoltaic devices have some advantages over power-requiring photoconductive devices. In this paper we reported the main results on the HgCdTe growing and characterization including LPE and MOCVD, device fabrication and its characteristics such as single element and linear array($8{\times}1$ PC, $128{\times}1$ PV and 4120{\times}1$ PC). Also we included the results of the dewar manufacturing, assembling, and optical and environmental test of the detectors.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.79-79
• /
• 1999

The varous techniques for fabrication of si or metal tip as a field emission electron source have been reported due to great potential capabilities of flat panel display application. In this report, 240nm thermal oxide was initially grown at the p-type (100) (5-25 ohm-cm) 4 inch Si wafer and 310nm Si3N4 thin layer was deposited using low pressure chemical vapor deposition technique(LPCVD). The 2 micron size dot array was photolithographically patterned. The KOH anisotropic etching of the silicon substrate was utilized to provide V-groove formation. After formation of the V-groove shape, dry oxidation at 100$0^{\circ}C$ for 600 minutes was followed. In this procedure, the orientation dependent oxide growth was performed to have a etch-mask for dry etching. The thicknesses of the grown oxides on the (111) surface and on the (100) etch stop surface were found to be ~330nm and ~90nm, respectively. The reactive ion etching by 100 watt, 9 mtorr, 40 sccm Cl2 feed gas using inductively coupled plasma (ICP) system was performed in order to etch ~90nm SiO layer on the bottom of the etch stop and to etch the Si layer on the bottom. The 300 watt RF power was connected to the substrate in order to supply ~(-500)eV. The negative ion energy would enhance the directional anisotropic etching of the Cl2 RIE. After etching, remaining thickness of the oxide on the (111) was measured to be ~130nm by scanning electron microscopy.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.63-63
• /
• 2010

Using both experimental and theoretical approaches, we have investigated the adsorption properties of an organic molecule (HATCN), which is used in OLEDs as an efficient hole injection layer, on metal and inert surfaces. We have also studied the structural and electronic properties of such interfaces and the dependences on deposition thickness. We have observed different trends in work function changes with different surfaces. Our photoelectron spectroscopic measurements have revealed an abnormal phenomenon in HATCN on a metal (Cu) surface: the work function decreases at lower coverage (~monolayer) of HATCN on a metal (Cu) surface, but it increases back and becomes higher than that of a bare Cu surface at higher coverage. It has, on the contrary, been observed that the work function of graphene surface just increases as the HATCN coverage increases. Our first-principles density functional calculations has not only verified our experimental observations, but also disclosed the underlying mechanism of such abnormal and different work function behaviors. We have found that the change in work function results from mutual polarization induced by the geometrical deformation and the bond dipole formed at the interface due to the charge redistribution. At low coverage of HAT-CN on Cu substrate, the former reduces the work function significantly by pulling down the vacuum level, while the latter tends to push up the vacuum level resulting in the work function increase.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.246-246
• /
• 2010

As the trench width in the interconnect technology decreases down to nano-scale below 50 nm, superconformal gap-filling process of Cu becomes very critical for Cu interconnect. Obtaining superconfomral gap-filling of Cu in the nano-scale trench or via hole using MOCVD is essential to control nucleation and growth of Cu. Therefore, nucleation of Cu must be suppressed near the entrance surface of the trench while Cu layer nucleates and grows at the bottom of the trench. In this study, suppression of Cu nucleation was achieved by treating the Ru barrier metal surface with capacitively coupled hydrogen plasma. Effect of hydrogen plasma pretreatment on Cu nucleation was investigated during MOCVD on atomic-layer deposited (ALD)-Ru barrier surface. It was found that the nucleation and growth of Cu was affected by hydrogen plasma treatment condition. In particular, as the plasma pretreatment time and electrode power increased, Cu nucleation was inhibited. Experimental data suggests that hydrogen atoms from the plasma was implanted onto the Ru surface, which resulted in suppression of Cu nucleation owing to prevention of adsorption of Cu precursor molecules. Due to the hydrogen plasma treatment of the trench on Ru barrier surface, the suppression of Cu nucleation near the entrance of the trenches was achieved and then led to the superconformal gap filling of the nano-scale trenches. In the case for without hydrogen plasma treatments, however, over-grown Cu covered the whole entrance of nano-scale trenches. Detailed mechanism of nucleation suppression and resulting in nano-scale superconformal gap-filling of Cu will be discussed in detail.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.366-366
• /
• 2012

현재 사용되고 있는 투명전극재료 중에 ITO(Indium Tin Oxide)가 가장 투명하면서 전기도 잘 통하고 생산성도 좋다. 투명전극은 비저항이 $1{\times}10^{-3}{\Omega}/cm$이하, 면 저항이 $10^3{\Omega}/sq$이하로 전기전도성이 우수하고 380에서 780 nm의 가시광선 영역에서의 투과율이 80%이상이라는 두 가지 성질을 만족시키는 박막이다. 본 연구에서 X-ray Film을 제작하기 위하여 상용화된 ITO Glass 전극 기판에 X-ray가 조사되면 직접 전자 전공 쌍(electron-hole pair)을 발생시켜 전기적 신호를 발생하는 광도전체 물질(Photoconductor)인 PbO, $PbI_2$, $HgI_2$를 스크린 프린팅(Screen Printing)법을 이용하여 각각 제작하였다. 상부 전극으로 마그네틱 스퍼터링(Magnetic Sputtering) 진공 증착 장치를 사용하여 전류, 전압, 아르곤 및 산소 유입량등을 조절하면서 상부 전극을 증착하였다. 이때 타켓으로 $In_2O_3;SnO_2$ (조성비:90:10wt%)를 사용 하였고, base pressure는 $9{\times}10^{-7}torr$, deposition pressure는 $3{\times}10^5torr$를 고정하였다. 또한 전류와 전압은 각각 0.4A, 800V로 유지하고, $O_2$:0.3 ppm, Ar의 경우 4.9 ppm에서 70 ppm까지 올려 플라즈마를 활성화 시킨 후 90초 동안 ITO를 증착하였다. 본 실험에 제작된 박막으로 X-ray을 조사하여 검출기로써 특성 평가를 실시하였으며, 실험결과 X-선 투과와 전도성 등 두가지 특성이 동시에 만족 될 만한 성능을 가질 수 있음을 확인 할 수 있었다.

• The Journal of Engineering Geology
• /
• v.11 no.3
• /
• pp.255-267
• /
• 2001

A comparison study is performed to understand the coupling behavior of the thermal, hydraulic, and mechanical interactions in the vicinity of an underground radwaste repository, assumed to be located at a depth of 500 m, within a granitic rock mass with a 58$^{\circ}$ dipping fault passing through the roof-wall intersection of the repository cavern. The two dimensional universal distinct element code, UDEC is used for the analysis. The model includes a granitic rock meas, a canister with PWR spent fuels surrounded by the compacted bentonite inside a deposition hole, and the mixed bentonite backfilled in the rest of the space within a repository cavern. The coupling behavior of hydromechanical, thermomechanical, and thermohydromechanical interaction has been studied and compared. The effect of the time-dependent decaying heat, from the radioactive materials in PWR spent fuels, on the repository and its surroundings has been studied. A steady state flow algorithm is used for the hydraulic analysis.

• Bulletin of the Korean Chemical Society
• /
• v.35 no.2
• /
• pp.441-447
• /
• 2014

$AgI/AgCl/H_2WO_4$ double heterojunctions photocatalyst was prepared via deposition-precipitation followed by ion exchange method. The structure, crystallinity, morphology, chemical content and other physical-chemical properties of the samples are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive x-ray spectra (EDX), UV-vis diffuse reflectance spectroscopy (DRS), and photoluminescence (PL). The photocatalytic activity of the $AgI/AgCl/H_2WO_4$ was evaluated by degrading methyl orange (MO) under visible light irradiation (${\lambda}$ > 400 nm). The double heterojunctions photocatalyst displayed more efficient photocatalytic activity than pure AgI, AgCl, $H_2WO_4$ and AgCl/$H_2WO_4$. Based on the reactive species and energy band structure, the enhanced photocatalytic activity mechanism of $AgI/AgCl/H_2WO_4$ was discussed in detail. The improved photocatalytic performance of $AgI/AgCl/H_2WO_4$ double heterojunctions could be ascribed to the enhanced interfacial charge transfer and the inhibited recombination of electron-hole pairs, which was in close relation with the $AgI/AgCl/H_2WO_4$ heterojunctions formed between AgI, AgCl and $H_2WO_4$.

• Proceedings of the KIEE Conference
• /
• 2006.10a
• /
• pp.53-54
• /
• 2006

Arsenic doped p-type ZnO thin films have been realized on intrinsic (100) GaAs substrate by RF magnetron sputtering and thermal annealing treatment. p-Type ZnO exhibits the hole concentration of $9.684{\times}10^{19}cm^3$, resistivity of $2.54{\times}10^{-3}{\Omega}cm$, and mobility of $25.37\;cm^2/Vs$. Photoluminescence (PL) spectra of As doped p-type ZnO thin films reveal neutral acceptor bound exciton ($A^{0}X$) of 3.3437 eV and a transition between free electrons and acceptor levels (FA) of 3.2924 eV. Calculated acceptor binding energy ($E_A$) is about 0.1455 eV. Thermal activation and doping mechanism of this film have been suggested by using X-ray photoelectron spectroscopy (XPS). p-Type formation mechanism of As doped ZnO thin film is more related to the complex model, namely, $As_{Zn}-2V_{Zn}$, in which the As substitutes on the Zn site, rather than simple model, Aso, in which the As substitutes on the O site. ZnO-based p-n junction was fabricated by the deposition of an undoped n-type ZnO layer on an As doped p-type ZnO layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.11a
• /
• pp.111-114
• /
• 1999

Electroluminescence(EL) devices based on organic thin films have been attracted lots of interests in large-area light-emitting display. In this stuffy, an emissive layer was fabricated using Langmuir-Blodgett(LB) technique in organic light-emitting (OLEDs). This emissive organic material was synthesized and named PECCP[poly(3.6-N-2-ethylhexyl carbazolyl cyanoterephthalidene)] which has a strong electron donor group and an electron acceptor group in main chain repeated unit. This material has good solubility in common organic solvents such as chloroform. THF, etc, and has a good stability in air. The Langmuir-Blodgett(LB) technique has the advantage of precise control of the thickness down to the molecular scale, In particular, by varying the film thickness it is possible to investigate the metal/polymer interface. Optimum conditions for the LB film deposition are usually determined by investigating a relationship between a surface pressure $\pi$ and an effective are A occupied by one molecule on the subphase. The LB films were deposited on an indium-tin-oxide(ITO) glass at a surface pressure of 10 mN/m and dipping speed of 12 mm/min after spreading PECCP solution on distilled water surphase at room temperature, Cell structure was ITO/PECCP LB film/Alq$_3$/Al. We considered PECCP as a hole -transport layer inserted between the emissive layer and ITO. We also used Alq$_3$ as an emissive layer and an electron transport layer. We measured current-voltage(I-V) characteristics, UV/visible absorption, PL spectrum and EL spectrum of the OLEDs.