• 제목/요약/키워드: Deposition during growth

검색결과 294건 처리시간 0.021초

마이크로웨이브 화학 기상 증착법을 이용한 다이아몬드 박막의 증착 (Deposition of diamond thin film by MPECVD method)

  • Sung Hoon Kim;Young Soo Park;Jo-Won Lee
    • 한국결정성장학회지
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    • 제4권1호
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    • pp.92-99
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    • 1994
  • 마이크로웨이브 화학 기상 중착법을 이용하여 n 형 Si(100) 기팡위에 다이아몬드 박막을 증착하였다. 다이아몬드의 핵생성 밀도를 향상시키기 위하여 Si 기판을 다이아몬드 분말로 전처리 하거나 negative bias를 인가하여 다이아몬드 박막을 증착하였다. 전처리한 기판에서는 다이아몬드의 순수도가 전체압력이 증가함에 따라 (20~150 Torr)향상되었으며 bias 인가시에는$CH_4$ 농도와 전체압력에 따라 다이아몬드의 생성유무가 결정되었다.플라즈마의 이온에 의해 가판위에 생성되는 전류를 $CH_4$ 농도, bias 전압, 그리고 전체압력에 따라 측정하였으며 그 결과를 다이아몬드 박막의 생성 조건과 관련시켜 검토 하였다.

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Oxidation Behavior of Oxide Particle Spray-deposited Mo-Si-B Alloys

  • Park, J.S.;Kim, J.M.;Kim, H.Y.;Perepezko, J.H.
    • 열처리공학회지
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    • 제20권6호
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    • pp.299-305
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    • 2007
  • The effect of spray deposition of oxide particles on oxidation behaviors of as-cast Mo-14.2Si-9.6B (at%) alloys at $1200^{\circ}C$ up to for 100 hrs has been investigated. Various oxide powders are utilized to make coatings by spray deposition, including $SiO_2,\;TiO_2,\;ZrO_2,\;HfO_2$ and $La_2O_3$. It is demonstrated that the oxidation resistance of the cast Mo-Si-B alloy can be significantly improved by coating with those oxide particles. The growth of the oxide layer is reduced for the oxide particle coated Mo-Si-B alloy. Especially, for the alloy with $ZrO_2$ coating, the thickness of oxide layer becomes only one fifth of that of uncoated alloys when exposed to in air for 100 hrs. The reduction of oxide scale growth of the cast Mo-Si-B alloy due to oxide particle coatings are discussed in terms of the change of viscosity of glassy oxide phases that form during oxidation at high temperature.

실리콘 상온 전해 도금 박막 제조 및 전기화학적 특성 평가 (Room Temperature Preparation of Electrolytic Silicon Thin Film as an Anode in Rechargeable Lithium Battery)

  • 김은지;신헌철
    • 한국재료학회지
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    • 제22권1호
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    • pp.8-15
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    • 2012
  • Silicon-based thin film was prepared at room temperature by an electrochemical deposition method and a feasibility study was conducted for its use as an anode material in a rechargeable lithium battery. The growth of the electrodeposits was mainly concentrated on the surface defects of the Cu substrate while that growth was trivial on the defect-free surface region. Intentional formation of random defects on the substrate by chemical etching led to uniform formation of deposits throughout the surface. The morphology of the electrodeposits reflected first the roughened surface of the substrate, but it became flattened as the deposition time increased, due primarily to the concentration of reduction current on the convex region of the deposits. The electrodeposits proved to be amorphous and to contain chlorine and carbon, together with silicon, indicating that the electrolyte is captured in the deposits during the fabrication process. The silicon in the deposits readily reacted with lithium, but thick deposits resulted in significant reaction overvoltage. The charge efficiency of oxidation (lithiation) to reduction (delithiation) was higher in the relatively thick deposit. This abnormal behavior needs to clarified in view of the thickness dependence of the internal residual stress and the relaxation tendency of the reaction-induced stress due to the porous structure of the deposits and the deposit components other than silicon.

압전 소자용 ZnO 박막의 증착 및 물성 분석 (Deposition and characterization of ZnO thin films for piezo-electric devices)

  • 이진복;김귀현;신양호;서수형;박진석
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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    • pp.959-961
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    • 1999
  • ZnO thin films are deposited by using an RF magnetron sputtering system. Structural and electrical properties are analyzed as a function of deposition conditions, such as RF power, Ar/($Ar+O_2$) ratio, and substrate temperature. The c-axial growth of ZnO is observed to be preferable to the $SiO_2$/Si substrate, rather than the Si substrate. By adding the oxygen gas during deposition, the electrical resistivity of films is increased, but the c-axial growth is inhibited. A pizoelectric resonator of Al/ZnO/Al is also fabricated to estimate the electric-mechanical coupling coefficient($k^2$) of ZnO film. The value of $k^2$ obtained from our work is about 10.14 %.

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티타늄과 ITO유리기판에 전착법으로 성장된 $Hg_{1-x}Cd_xTe$ 박막과 성장 조건이 결정구조 및 성분 조성비에 미치는 영향 (Influence of Growth Conditions on the Structural and Atomic Fractional Properties of $Hg_{1-x}Cd_xTe$ Films Electrodeposited onto Titanium and ITO glass)

  • 최춘태
    • 센서학회지
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    • 제10권1호
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    • pp.80-85
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    • 2001
  • $Hg_{1-x}Cd_xTe$(MCT)박막을 $CdSO_4$, $TeO_2$, 및 $HgCl_2$이 혼합된 수용액을 사용하여 음극 전착법으로 ITO 유리와 티타늄기판 위에 성장하였다. 주된 박막의 성장 조건 변수로 전착전위와 성장 온도를 고려하였다. 전착된 MCT 박막은 SEM사진과 XRD 및 EPMA측정을 통하여 박막의 성장 조건이 결정 구조와 성분 조성비에 미치는 영향을 분석 연구하였다. XRD 분석으로부터 전착된 MCT 박막은 cubic zinc blonde 구조임을 알 수 있었고, EPMA에 의한 성분조성비의 분석결과로부터 전착전위를 변화시키므로서 MCT의 성분 조성비를 조절할 수 있음을 알 수 있었다.

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증착조건에 따른 undoped ZnO 박막의 특성 변화 (Property variations of undoped ZnO thin films with deposition conditions)

  • 남형진;이규항;조남인
    • 반도체디스플레이기술학회지
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    • 제7권3호
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    • pp.51-54
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    • 2008
  • In this study, we investigated variations in undoped ZnO thin film properties with working pressure, $O_2$/Ar ratio, and annealing ambient. Higher vacuum pressure during deposition was observed to bring about slower growth rate resulting in samples with better crystallinity as well as hole generation efficiency through formation of shallower oxygen interstitial. Given that $O_2$/Ar ratio is greater than unity, O provided from the ambient to ZnO during annealing was found to preferably situate at interstitial sites. When He was used for the second annealing, significant changes were not observed. On the other hand, O ambient caused increased density of oxygen interstitial, thereby making the film more intrinsic-like high resistivity ZnO.

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MOCVD에 의한 Al 박막 증착 중의 표면 반사도 측정을 통한 박막 성장 메커니즘 분석 (Analysis of Growth Mechanism of Al Thin Film by in-situ Surface Reflectance Measurement During MOCVD Process)

  • 김기수;서문규
    • 한국전기전자재료학회논문지
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    • 제28권2호
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    • pp.104-108
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    • 2015
  • Al thin films were deposited on TiN/Si(100) via metal-organic chemical vapor deposition using N-methylpyrrolidine alane as a precursor. Characterization of the deposited films were investigated with SEM, XRD, ${\alpha}$-step, AFM, 4-point probe. The early stage of Al thin film deposition was analyzed by in-situ surface reflectance measurement with laser and photometer apparatus. The surface reflectance were changed greatly during the initial 30~40 seconds. There were two increases and two decreases in the surface reflectance, thus the sequence of Al films were deposited at 8 significant points of the surface reflectance change. Surface topograph and cross-sectional view of each film were analyzed with SEM. Al films were grown in the complex mechanism of Volmer-Weber and Stranski-Krastanov process.

운동에너지를 가지는 알루미늄 덩어리 충돌 및 증착에 관한 분자동력학 연구 (Molecular Dynamics Study of the Energetic Aluminum Cluster Impact and Deposition)

  • 강정원;황호정
    • 한국진공학회지
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    • 제10권3호
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    • pp.283-288
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    • 2001
  • 본 연구에서는 분자동력학 방법을 사용하여 알루미늄 덩어리 충돌에 관하여 연구하였다. 충돌에 따른 운동량 및 충격력 변화를 통하여, 덩어리 충돌은 단일입자충돌(single particle collision) 특성 일부와 선형사슬충돌(linear chain collisions) 특성 일부를 가지는 것을 살펴보았다. 또한 연속적인 덩어리 증착을 통하여 성장된 박막의 특성을 살펴보았다 원자당 에너지가 너무 낮은 경우보다는 일정 에너지 이상에서 혼합(intermixing) 발생이 잘 이루어지며 짝은 어닐링 공정으로 좋은 박막을 얻을 수 있다는 것을 살펴보았다.

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Deposition of ZrO$_2$ and TiO$_2$ Thin Films Using RF Magnet ron Sputtering Method and Study on Their Structural Characteristics

  • Shin, Y.S.;Jeong, S.H.;Heo, C.H.;Bae, I.S.;Kwak, H.T.;Lee, S.B.;Boo, J.H.
    • 한국표면공학회지
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    • 제36권1호
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    • pp.14-21
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    • 2003
  • Thin films of ZrO$_2$ and TiO$_2$ were deposited on Si(100) substrates using RF magnetron sputtering technique. To study an influence of the sputtering parameters, systematic experiments were carried out in this work. XRD data show that the $ZrO_2$ films were mainly grown in the [111] orientation at the annealing temperature between 800 and $1000^{\circ}C$ while the crystal growth direction was changed to be [012] at above $1000^{\circ}C$. FT-IR spectra show that the oxygen stretching peaks become strong due to $SiO_2$ layer formation between film layers and silicon surface after annealing, and proved that a diffusion caused by either oxygen atoms of $ZrO_2$ layers or air into the interface during annealing. Different crystal growth directions were observed with the various deposition parameters such as annealing temperature, RF power magnitude, and added $O_2$ amounts. The growth rate of $TiO_2$ thin films was increased with RF power magnitude up to 150 watt, and was then decreased due to a sputtering effect. The maximum growth rate observed at 150 watt was 1500 nm/hr. Highly oriented, crack-free, stoichiometric polycrystalline $TiO_2$<110> thin film with Rutile phase was obtained after annealing at $1000^{\circ}C$ for 1 hour.

Effects of controlled environmental changes on the mineralization of soil organic matter

  • Choi, In-Young;Nguyen, Hang Vo-Minh;Choi, Jung Hyun
    • Environmental Engineering Research
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    • 제22권4호
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    • pp.347-355
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    • 2017
  • This study investigated how the combined changes in environmental conditions and nitrogen (N) deposition influence the mineralization processes and carbon (C) dynamics of wetland soil. For this objective, we conducted a growth chamber experiment to examine the effects of combined changes in environmental conditions and N deposition on the anaerobic decomposition of organic carbon and the emission of greenhouse gases from wetland soil. A chamber with elevated $CO_2$ and temperature showed almost twice the reduction of total decomposition rate compared to the chamber with ambient atmospheric conditions. In addition, $CO_2$ fluxes decreased during the incubation under the conditions of ambient $CO_2$ and temperature. The decrease in anaerobic microbial metabolism resulted from the presence of vegetation, which influences the litter quality of soils. This can be supported by the increase in C/N ratio over the experimental duration. Principle component analysis results demonstrated the opposite locations of loadings for the cases at the initial time and after three months of incubation, which indicates a reduction in the decomposition rate and an increasing C/N ratio during the incubation. From the distribution between the decomposition rate and gas fluxes, we concluded that anaerobic decomposition rates do not have a significantly positive relationship with the fluxes of greenhouse gas emissions from the soil.