• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.18-19
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• 2005

EDDC(Evaporation using Drum in Dual Chamber) deposition system was manufactured for 100m long superconducting coated conductor. It is composed of reaction chamber, evaporation chamber and differential chamber. The drum is located across the differential and exposed to both of the evaporation chamber and the reaction chamber, and the tape is wound on the drum. The elements of superconducting material are co-evaporated from respective element boats in the evaporation chamber and deposited on the drum and reacted with oxygen in the reaction chamber. This process repeats by rotating the drum. When the total pressure of the reaction chamber was 5 mTorr, that of the evaporation chamber was $5{\sim}10^{-5}$Torr. This atmosphere can be achieved by means of differential pumping. There are four evaporator in the evaporation chamber. One is the radiation heating evaporator and the others are the high frequency induction evaporator. EDDC is one of promising methods for commercialization of superconducting coated conductor.

• 한국재료학회지
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• 제18권3호
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• pp.148-152
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• 2008

A new cost-effective atomic layer deposition (ALD) technique, known as Proximity-Scan ALD (PS-ALD) was developed and its benefits were demonstrated by depositing $Al_2O_3$ and $HfO_2$ thin films using TMA and TEMAHf, respectively, as precursors. The system is consisted of two separate injectors for precursors and reactants that are placed near a heated substrate at a proximity of less than 1 cm. The bell-shaped injector chamber separated but close to the substrate forms a local chamber, maintaining higher pressure compared to the rest of chamber. Therefore, a system configuration with a rotating substrate gives the typical sequential deposition process of ALD under a continuous source flow without the need for gas switching. As the pressure required for the deposition is achieved in a small local volume, the need for an expensive metal organic (MO) source is reduced by a factor of approximately 100 concerning the volume ratio of local to total chambers. Under an optimized deposition condition, the deposition rates of $Al_2O_3$ and $HfO_2$ were $1.3\;{\AA}/cycle$ and $0.75\;{\AA}/cycle$, respectively, with dielectric constants of 9.4 and 23. A relatively short cycle time ($5{\sim}10\;sec$) due to the lack of the time-consuming "purging and pumping" process and the capability of multi-wafer processing of the proposed technology offer a very high through-put in addition to a lower cost.

• 한국결정성장학회지
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• 제8권2호
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• pp.233-239
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• 1998

화학기상증착법을 이용하여 tetramethylsilane(TMS)과 hexamethyldisilane(HMDS)으로부터 SiC층을 증착시켰다. 반응관 내의 압력은 1torr를 유지시켰으며, $H_2$ 가스를 사용하여 precursor를 반응로내로 수송하였고 $1200^{\circ}C$의 반응온도로 SiC 증착이 이루어졌다. 기판은 tantalum으로 masking한 Si-wafer와 platinum, molybdenum으로 masking한 MgO 단결정을 사용하였다. 금속층(Ta, Pt, Mo)에서의 SiC 증착 양상과 Si, MgO 위에서의 SiC 증착 양상을 비교함으로써 SiC 증착의 선택성을 관찰하였다. 증착층의 주된 상은 X-선 회절분석에 의해 $\beta-SiC$로 확인되었다. 또한 전자현미경 분석을 통해 각 층에서의 증착 양상의 차이를 조사하였다.

• 한국표면공학회지
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• 제26권1호
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• pp.3-9
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• 1993

Chemical vapor deposited tungsten films were formed in a cold wall reactor at pressures higher (10~120torr) than those conventionally employed (<1torr). SiH4, in addition to H2, was used as the reduction gas. The effects of pressure and reaction temperature on the deposition rate and morphology of the films were ex-amined under the above conditions. No encroachment or silicon consumption was observed in the tungsten de-posited specimens. A high deposition rate of tungsten and a good step coverage of the deposited films were ob-tained at 40~80 torr and at a temperature range of $360~380^{\circ}C$. The surface roughness and the resistivity of the deposited film increased with pressure. The deposition rate of tungsten increased with the total pressure in the reaction chamber when the pressure was below 40 torr, whereas it decreased when the total pressure ex-ceedeed 40 torr. The deposition rate also showed a maximum value at $360^{\circ}C$ regardless of the gas pressure in the chamber. The results suggest that the deposition mechanism varies with pressure and temperature, the surface reac-tion determines the overall reaction rate and (2) at higher pressures(>40 torr) or temperatures(>36$0^{\circ}C$), the rate is controlled by the dtransportation rate of reactive gas molecules. It was shown from XRD analysis that WSi2 and metastable $\beta$-W were also formed in addition to W by reactions between WF6 and SiH4.

• 한국표면공학회지
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• 제52권6호
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• pp.357-363
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• 2019

We investigated a synthesis yield and diameter distribution of single-walled carbon nanotubes (SWNTs) with respect to the growth position in a horizontal chemical vapor deposition (CVD) chamber. Thin films and line-patterned Fe films (0.1 nm thickness) were prepared onto ST-cut quartz substrates as catalyst to compare the growth behavior. The line-patterned samples showed higher growth density and parallel alignment than those of the thin film catalyst samples. In addition, line density of the aligned SWNTs at central region of the chamber was 7.7 tubes/㎛ and increased to 13.9 tubes/㎛ at rear region of the CVD chamber. We expect that the enhanced amount of thermally decomposed feedstock gas may contribute to the growth yield enhancement at the rear region. In addition, the lamina flow in the chamber also contribute to the perfect alignment of the SWNTs based on the value of gas velocity, Reynold number, and Knudsen coefficient we employed.

• Environmental Engineering Research
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• 제22권4호
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• pp.347-355
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• 2017

This study investigated how the combined changes in environmental conditions and nitrogen (N) deposition influence the mineralization processes and carbon (C) dynamics of wetland soil. For this objective, we conducted a growth chamber experiment to examine the effects of combined changes in environmental conditions and N deposition on the anaerobic decomposition of organic carbon and the emission of greenhouse gases from wetland soil. A chamber with elevated $CO_2$ and temperature showed almost twice the reduction of total decomposition rate compared to the chamber with ambient atmospheric conditions. In addition, $CO_2$ fluxes decreased during the incubation under the conditions of ambient $CO_2$ and temperature. The decrease in anaerobic microbial metabolism resulted from the presence of vegetation, which influences the litter quality of soils. This can be supported by the increase in C/N ratio over the experimental duration. Principle component analysis results demonstrated the opposite locations of loadings for the cases at the initial time and after three months of incubation, which indicates a reduction in the decomposition rate and an increasing C/N ratio during the incubation. From the distribution between the decomposition rate and gas fluxes, we concluded that anaerobic decomposition rates do not have a significantly positive relationship with the fluxes of greenhouse gas emissions from the soil.

• Journal of Korean Society for Atmospheric Environment
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• 제20권E1호
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• pp.35-41
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• 2004

Aerosol wall loss is an important factor affecting smog chamber experiments, especially with chambers made of Teflon film. In this work, the aerosol wall loss was investigated in 2.5 and $5.8-m^3$ cubic-shaped Teflon film chambers filled with ambient air. The natural change in the particle size distribution was measured using a scanning mobility particle sizer in a dark environment. The rate of aerosol wall loss was obtained from the deposition theory suggested by Crump and Seinfeld (1981). The measured rates of aero-sol wall loss were In a good agreement with the theoretical and experimental values given by McMurry and Rader (1985), implying that the electrostatic effect enhances particle deposition on the chamber wall. The significance of aerosol wall loss correction was demonstrated with the photochemical reaction experiments using the ambient air.

• 한국레이저가공학회지
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• 제18권3호
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• pp.1-5
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• 2015

A 3D printer based on laser powder deposition (LPD), also known as DED (direct energy deposition), has been developed for fabricating metal parts. The printer uses a ytterbium fiber laser (1070nm, 1kW) and is equipped with an Ar purge chamber, a three-dimensional translation stage and a powder feeding system composed of a powder chamber and delivery nozzles. To demonstrate the performance of the printer, a tapered cylinder of 320mm in height has been fabricated successfully using Ti-6Al-4V powders. The process parameters including the laser output power, the scan speed, and the powder feeding rate have been optimized. A 3D printed test specimen shows mechanical properties (yield strength, ultimate tensile strength, and elongation) exceeding the criteria to employed in a variety of Ti alloy applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.461-461
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• 2010

For a low dielectric constant inter-metal dielectric application, the low-k SiCOH film with a dielectric constant of 2.8-3.2 has been deposited by plasma-enhanced chemical vapor deposition with decamethylcyclopentasiloxane, cyclohexane, and helium which is carrier gas. In this work, we investigated chemical deposition rate, dielectric constant, characterization of plasma polymer films according to temperature(25C-200C) of substrate and change of component concentration. We measured impedance by using V-I prove during process. From experimental result, deposition rate decrease with increasing temperature. Through real time impedance analysis of chamber, we find corelation between film thickness and impedance by assuming equivalent circuit.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.262.2-262.2
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• 2014

Plasma processing is an essential process for pattern etching and thin film deposition in nanoscale semiconductor device fabrication. It is necessary to maintain plasma chamber in steady-state in production. In this study, we determined plasma chamber state with residual gas analysis with self-plasma optical emission spectroscopy. Residual gas monitoring of fluorocarbon plasma etching chamber was performed with self-plasma optical emission spectroscopy (SPOES) and various chemical elements was identified with a SPOES system which is composed of small inductive coupled plasma chamber for glow discharge and optical emission spectroscopy monitoring system for measuring optical emission. This work demonstrates that chamber state can be monitored with SPOES and this technique can potentially help maintenance in production lines.