• 한국세라믹학회지
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• 제26권3호
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• pp.323-330
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• 1989

Wear restance titanium carbonitride (TiCN) films were deposited on the SKH9 tool steels and WC-Co cutting tools by plasma assisted chemical vapor deposition (PACVD) using a gaseous mixture of TiCl4, CH4, N2, H2 and Ar. The effects of the deposition temperature and RF(Radio Frequency) power on the deposition rate, chlorine content and crystallinity of the deposited layer were studied. The experimental results showed that the stable and adherent films could be obtained above the deposition temperature of 47$0^{\circ}C$ and maximum deposition rate was obtained at 485$^{\circ}C$. The deposition rate was much affected by RF power and maximum at 40W. The crystallinity of the deposited layer was improved with increasing the deposition temperature and RF power. The TiCN films deposited by PACVD contained much chlorine. The chlorine content in the TiCN films was affected by deposition conditions and decreased with improving the crystallinity of the deposited layer. The deposited TiCN films deposited at the deposition temperature of 52$0^{\circ}C$ and RF power of 40W had an uniform surface with very fine grains of about 500$\AA$ size. The microhardness of the deposited layer was 2,300Kg/$\textrm{mm}^2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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• pp.117-121
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• 1992

Zinc oxide thin films were obtained from zinc acetate-2-water and oxygen by photo-CVD method. (1) The formation of ZnO films sarts from 100[$^{\circ}C$] and the deposition rate increases with increasing substrate temperature. (2) The rate of deposition was also affected by flow rates of O$_2$(reaction gas) and N$_2$(Carrier gas). (3) The deposition rate decreases with increasing O$_2$mole rate. (4) The transmission of the films was independent of oxygen mole rate and it was largely affected substrate temperature. (5) The electric resistivity of th films was largely varied at oxygen mole rate 10[%] and above 20[%], a plateau was encountered. Also, it increases with increasing substrate temperature. As the results, at substrate temperature: 200[$^{\circ}C$]; O$_2$gas mole rate:10[%]; reation time:10[min] pressure: 10$\^$-2/[atm], deposition rate; transmittance; resistivity were 780[A$\^$0/; 94[%]; 7${\times}$10$\^$-2/[$\Omega$$.$cm] respectively.

• 반도체디스플레이기술학회지
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• 제23권2호
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• pp.87-91
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• 2024

SiO₂, renowned for its excellent insulating properties, has been used in the semiconductor industry as a valuable dielectric material. High-quality SiO₂ films find applications in gate spacers and interlayer insulation gap-fill oxides, among other uses. One of the prevalent methods for depositing these SiO₂ films is plasma enhanced chemical vapor deposition (PECVD) favored for its relatively low processing costs and ability to operate at low temperatures. However, compared to the increasingly utilized atomic layer deposition (ALD) method, PECVD exhibits inferior film characteristics such as uniformity. This study aims to produce SiO₂ films with uniformity as close as possible to those achieved by ALD through the adjustment of PECVD process parameters. we conducted a total of nine PECVD processes, varying the process time and gas flow rates, which were identified as the most influential factors on the PECVD process. Furthermore, ellipsometry analysis was employed to examine the uniformity variations of each process. The experimental results enabled us to elucidate the relationship between uniformity and deposition rate, as well as the impact of gas flow rate and deposition time on the process outcomes. Additionally, thickness measurements obtained through ellipsometer facilitate the identification of optimal process parameters for PECVD.

• 한국세라믹학회지
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• 제36권9호
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• pp.901-908
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• 1999

Effects of LPMOCVD process parameters on the properties of TiO2 thin film were investigated. Depositions were made in the range of temperature 300-67$0^{\circ}C$ with various TTIP(Titanium Tetraisopropoxide) concentrations by contrlling bubbler temperature(40-8$0^{\circ}C$) and/or flow rate(30-90 sccm). Post annealing treatments were carried out at 500-80$0^{\circ}C$ range in the air. Films deposited at 40$0^{\circ}C$ have denser morphology than those of films deposited at 50$0^{\circ}C$ and $600^{\circ}C$ due to slower deposition rate. Bubbler temperature can affect on the deposition rate in mass transfer controlled regime such as 50$0^{\circ}C$ or higher but not below 50$0^{\circ}C$ where surface reaction rate becomes important. On the contrary for films deposited above 50$0^{\circ}C$ flow rate can raise deposition rate but eventually saturate it at the 50 sccm and above due to retarded adhesion of decomposed species. But for films deposited at 40$0^{\circ}C$ deposition rate increases stadily with flow rate. As the film becomes more porous A(200) texture can not be developed and AnataselongrightarrowRutile transition kinetics increases.

• 한국세라믹학회지
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• 제28권1호
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• pp.1-10
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• 1991

Zirconium dioxide(ZrO2) thin films have been deposited by chemical vapor deposition technique involving the application of gas mixture of ZrCl4, and H2O into silicon wafers. The relationships between the deposition rate and various reaction parameters such as the deposition time, the gas flow rate, the deposition temperature, and the composition of reactant gases were studied. The film was identified as nearly stoichiometric monoclinic ZrO2. The apparent activation energy is about 19Kcal/mole at surface chemical reaction controlled region. The deposition rate is mainly influenced by the H2O-forming reacting between CO2 and H2.

• 한국세라믹학회지
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• 제41권5호
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• pp.364-369
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• 2004

The barrier and optical properties of AlO$_{x}$ thin films on polycarbonate deposited by Reactive Ion Beam Sputtering (RIBS) were investigated at different oxygen partial pressure. We measured the deposition rate of AlO$_{x}$ thin films. As the oxygen partial pres-sure increased, the deposition rate increased then decreased. The changes of deposition rate are associated with the properties of deposited films. The properties of deposited AlO$_{x}$ thin films were studied using X-ray Photoelectron Spectroscopy (XPS), Scan-ning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM). Optimum deposition parameters were found for fabricat-ing aluminum oxide thin films with high optical transparency for visible light and low Oxygen Transmission Rate (OTR). The optical transmittance of AlO$_{x}$ thin film deposited on polycarbonate (PC) showed the same value of bare PC.bare PC.

• 한국전기전자재료학회논문지
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• 제22권7호
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• pp.595-601
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• 2009

For the silicon oxide $(SiO_x)$ films prepared by using the facing target sputtering (FTS) apparatus that was manufactured to enhance the preciseness of the fabricated thin-film and sputtering yield rate by forming a higher-density plasma in the electrical discharge space for using it as a thin-film passivation system for flexible organic light emitting devices (FOLEDs). The deposition characteristics were investigated under various process conditions, such as array of the cathode magnets, oxygen concentration$(O_2/Ar+O_2)$ introduced during deposition, and variations of distance between two targets and working pressure. We report that the optimum conditions for our FTS apparatus for the deposition of the $SiO_x$ films are as follows: $d_{TS}\;and\;d_{TT}$ are 90mm and 120mm, respectively and the maximum deposition rate is obtained under a gas pressure of 2 mTorr with an oxygen concentration of 3.3%. Under this optimum conditions, it was found that the $SiO_x$ film was grown with a very high deposition rate of $250{\AA}$/min by rf-power of $4.4W/cm^2$, which was significantly enhanced as compared with a deposition rate (${\sim}55{\AA})$/min) of the conventional sputtering system. We also reported that the FTS system is a suitable method for the high speed and the low temperature deposition, the plasma free deposition, and the mass-production.

• Archives of Metallurgy and Materials
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• 제65권4호
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• pp.1365-1369
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• 2020

Direct energy deposition (DED) is a three-dimensional (3D) deposition technique that uses metallic powder; it is a multi-bead, multi-layered deposition technique. This study investigates the dependence of the defects of the 3D deposition and the process parameters of the DED technique as well as deposition characteristics and the hardness properties of the deposited material. In this study, high-thermal-conductivity steel (HTCS-150) was deposited onto a JIS SKD61 substrate. In single bead deposition experiments, the height and width of the single bead became bigger with increasing the laser power. The powder feeding rate affected only the height, which increased as the powder feeding rate rose. The scanning speed inversely affected the height, unlike the powder feeding rate. The multi-layered deposition was characterized by pores, a lack of fusion, pores formed by evaporated gas, and pores formed by non-molten metal inside the deposited material. The porosity was quantitatively measured in cross-sections of the depositions, revealing that the lack of fusion tended to increase as the laser power decreased; however, the powder feeding rate and overlap width increased. The pores formed by evaporated gas and non-molten metal tended to increase with rising the laser power and powder feeding rate; however, the overlap width decreased. Finally, measurement of the hardness of the deposited material at 25℃, 300℃, and 600℃ revealed that it had a higher hardness than the conventional annealed SKD61.

• 한국재료학회지
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• 제18권8호
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• pp.406-410
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• 2008

The properties of pyrolytic carbon (PyC) deposited from $C_2H_2$ and a mixture of $C_2H_2/C_3H_6$ on $ZrO_2$ particles in a fluidized bed reactor were studied by adjusting the deposition temperature, reactant concentration, and the total gas flow rate. The effect of the deposition parameters on the properties of PyC was investigated by analyzing the microstructure and density change. The density could be varied from $1.0\;g/cm^3$ to $2.2\;g/cm^3$ by controlling the deposition parameters. The density decreased and the deposition rate increased as the deposition temperature and reactant concentration increased. The PyC density was largely dependent on the deposition rate irrespective of the type of the reactant gas used.

• 한국표면공학회지
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• 제18권1호
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• pp.5-11
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• 1985

Titanium was deposited onto AISI-430 stainless steel by chemical vapor deposition from $TiI_4\;and\;H_2$ gas mixture. Effects of temperature, flow rate of the gas, and $TiI_4$ partial pressure on the deposition rate were thoroughly investigated. The deposition rate of Ti was found to be constant at the given temperature and was increased with increasing temperature. The rate is controlled by surface reaction at the flow rate of gas higher than 500 ml/min, whereas at the flow rate lower than that by diffusional process. It is also interesting to note that the reaction mechanism changes at 1050$^{\circ}C$, at temperatures lower than 1050$^{\circ}C$ the activation energy is 56.9 Kcal/mol, whilst at temperatures higher than that is 8.3 Kcal/mol.