• Transactions on Electrical and Electronic Materials
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• 제5권1호
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• pp.11-14
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• 2004

An rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of E${\times}$B field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.180-180
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• 2010

The design and implementation of high rate deposition process and anti-scratch property of silicon oxide film by PECVD with UHF power were investigated according to the effect of UHF input power with HF bias. New regime of high rate deposition of SiOx films by hybrid plasma process was investigated. The dissociation of OMCTS (C8H24Si4O4) precursor was controlled by plasma processes. SiOx films were deposited on polyethylene terephthalate (PET) and polycarbonate substrate by plasma enhanced chemical vapor deposition (PECVD) using OMCTS with oxygen carrier gas. As the input energy increased, the deposition rate of SiOx film increased. The plasma diagnostics were performed by optical emission spectrometry. The deposition rate was characterized by alpha-step. The mechanical properties of the coatings were examined by nano-indenter and pencil hardness, respectively. The deposition rate of the SiOx films could be controlled by the appropriate intensity of excited neutrals, ionized atoms and UHF input power with HF bias at room temperature, as well as the dissociation of OMCTS.

• 한국결정성장학회지
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• 제7권4호
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• pp.578-588
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• 1997

RTCVD법으로 $SiH_4$과 $GeH_4$ 가스를 이용하여 oxidized Si 위에 SiH$_4$: $GeH_4$ flow ratio(1 : 0.1~2 : 1), 증착온도(400~$600^{\circ}C$) 그리고 증착압력(1~50 torr)인 조건에서 다결정 $Si_{1-x}Ge_x$박막을 증착하여, 증착변수 변화에따른 $Si_{1-x}Ge_x$ 박막의 Ge 조성 변화와, Ge 조성이 증착속도에 미치는 영향 등에 대해 살펴보았다. 실험결과, 증착온도와 Ge 조성 증가에따라 증착속도는 증가하였으나 증착온도 증가에따라 Ge 조성이 감소하였다. 또한 증착압력 변화에따른 증착속도와 Ge조성 변화는, 증착압력 10 torr까지는 거의 직선적으로 증가하였으나 그이상에서는 서서히 증가함을 알 수 있었다. 이와같이 10 torr 이상의 증착압력에서 증착속도가 서서히 증가하는것은 물질전달 속도에 비해 표면반응 속도가 늦어져 나타난 현상으로 생각된다.

• 한국표면공학회지
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• 제26권1호
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• pp.3-9
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• 1993

Chemical vapor deposited tungsten films were formed in a cold wall reactor at pressures higher (10~120torr) than those conventionally employed (<1torr). SiH4, in addition to H2, was used as the reduction gas. The effects of pressure and reaction temperature on the deposition rate and morphology of the films were ex-amined under the above conditions. No encroachment or silicon consumption was observed in the tungsten de-posited specimens. A high deposition rate of tungsten and a good step coverage of the deposited films were ob-tained at 40~80 torr and at a temperature range of $360~380^{\circ}C$. The surface roughness and the resistivity of the deposited film increased with pressure. The deposition rate of tungsten increased with the total pressure in the reaction chamber when the pressure was below 40 torr, whereas it decreased when the total pressure ex-ceedeed 40 torr. The deposition rate also showed a maximum value at $360^{\circ}C$ regardless of the gas pressure in the chamber. The results suggest that the deposition mechanism varies with pressure and temperature, the surface reac-tion determines the overall reaction rate and (2) at higher pressures(>40 torr) or temperatures(>36$0^{\circ}C$), the rate is controlled by the dtransportation rate of reactive gas molecules. It was shown from XRD analysis that WSi2 and metastable $\beta$-W were also formed in addition to W by reactions between WF6 and SiH4.

• 약학회지
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• 제29권3호
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• pp.124-129
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• 1985

A dissolution characteristics of phenylbutazone deposited on Avicel and dibasic calcium phosphate by solvent deposition method were studied. The solvent deposition was confirmed by scanning electron microscopy. Avicel was superior to dibasic calcium phosphate as excipient in dissolution rate. Total amount of phenylbutazone dissolved from Avicel deposition system at 30minutes were enhanced 1.2-1.6 times compared with physical mixtures of them. The dissolution rate of 10% solvent deposition system was highest and that of 75% solvent deposition system was lowest in Avicel system and dibasic calcium phosphate system. Dissolution profile of commercial products was dependent on manufacturing conditions and dissolution rate of 10% Avicel system was greater than that of commercial products.

• 한국세라믹학회지
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• 제33권4호
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• pp.441-447
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• 1996

Sb doped SnO2(ATO:Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using oxide target and the deposition characteristics were investigated. The experimental conditions are as follows :Ar flow rate : 100 sccm oxygen flow rates ; 0-100 sccm deposition temperature ; 250 -40$0^{\circ}C$ DC sputter powder ; 150~550 W and sputtering pressure ; ; 2~7 mTorr. Deposition rate greatly depends not on the deposition temperature but on the reaction pressure oxygen flow rate and sputter power,. when the sputter powder is low ATO thin films with (110) preferred orientation are deposited. And when the sputter power is high (110) prefered orientation appeares with decreasing of oxygen flow rate and increasing of suputte-ring pressure.

• 한국표면공학회지
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• 제37권1호
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• pp.13-21
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• 2004

The deposition rate, the current efficiency and surface morphology of trivalent Cr deposits were investigated according to additives in sulfate bath and current density. The deposition rate of the Cr deposits plated from the formic acid complexed bath was noticeably higher than that of the glycine complexed bath. The current efficiency of the deposition from formic acid bath was higher than that of the glycine bath and increased with current density in the range of 20-50 A/d$\m^2$. The current efficiency of the deposition from the formic acid bath with boric acid buffer was higher than that of the bath with aluminum sulfate or boric acid-aluminum sulfate buffers. The nodular crystallite size of the Cr deposits increased with current density and the uniform and crack-free growth of the deposits for the aluminum sulfate was observed compared to the other buffers.

• 한국환경보건학회지
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• 제31권4호
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• pp.260-265
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• 2005

Indoor air quality might be affected by source strength of indoor pollutants, ventilation rate, decay rate, outdoor level, and so on. Although technologies measuring these factors exist directly, direct measurements of all factors are not always practical in most field studies. The purpose of this study was to develop an alternative method to estimate the source strength and deposition constant by application of multiple measurements. For the total duration of 60 days, indoor and outdoor $NO_2$ concentrations every 3 days were measured in 30 houses in Seoul, Asan and Daegu. Using a compartment model by mass balance and linear regression analysis, penetration factor (ventilation divided by sum of air exchange rate and deposition constant) and source strength factor (emission rate divided by sum of air exchange rate and deposition constant) were calculated. Subsequently, the source strength and deposition constant were estimated. Natural ventilation was $1.80{\pm}0.42\;ACH,\;1.11{\pm}0.50\;ACH,\;0.92{\pm}0.26\;ACH$ in Seoul, Asan and Daegu, respectively. Calculated deposition constant(K) and source strength of $NO_2,$ in this study were $0.98{\pm}0.28\;hr^{1}\;and\;16.28{\pm}7.47\;ppb/h,$ respectively.

• 한국표면공학회지
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• 제28권1호
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• pp.3-13
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• 1995

Electroless Ni and Cu platings were conducted on $B_4C$ and SiC. In the electroless Ni plating, the deposition rate on $B_4C$ was higher than on SiC. However, the electroless Cu deposition occured with high deposition rate regardless of the carbide substrates used in this study. Uniformity of the deposits was better in the electroless Cu deposition than in the electroless Ni deposition. In the topographies of the electroless depositions, Ni deposits have grown as colony, whereas Cu deposits have grown as fine individual grains.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.154-156
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• 2005

In the device structure of ITO/tris (8-hydroxyquinoline) aluminum(Alq3)/Al, we investigated the Organic Light-Emitting Diodes (OLEDs) properties as a function of the deposition rate of the $Alq_3$. The deposition rate was from 0.5 to 2.0 $[{\AA}/s]$ in a base pressure of $5{\times}10^{-6}$ [Torr]. It was found that a $Alq_3$ deposition rate of around 1.5 $[{\AA}/s]$ is the optimum for the maximum luminous properties. The optimum deposition rate of $Alq_3$ is 1.5 $[{\AA}/s]$.