• 제목/요약/키워드: Deposition Mechanism

검색결과 556건 처리시간 0.03초

화학증착법에 의해 성장된 TiO2박막의 증착기구와 표면형상에 미치는 증착조건의 영향 (Effect of Deposition Conditions on Deposition Mechanism and Surface Morphology of TiO2 Thin Films Deposited by Chemical Vapor Deposition)

  • 황철성;김형준
    • 한국세라믹학회지
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    • 제26권4호
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    • pp.539-549
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    • 1989
  • Polycrystalline TiO2 thin films were deposited on Si and Al2O3 substrates by CVD method. Ethyl titanate, Ti(OC2H5)4, was used as a source material for Ti and O, and Ar was used for carrier gas. In the surface chemical reaction controlled deposition condition, the apparent activation energy of 6.74 Kcal/mole was obtained, and the atomic adsorption on substrate surface was proved to be governed by Rideal-Elley mechanism. In the mass transfer controlled deposition condition, the deposition rate was in a good agreement with the result which was calculated by the simple boundary layer theory. It was also observed that TiO2 thin films show different surface morphology according to the different deposition mechanism, which was fixed by deposition conditions. This phenomenon could be well explained by the surface perturbation theory.

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레이져 CVD에 의한 $SiO_2$막의 형성기구 모델링에 관한 연구 (A Study on the mechanism of $SiO_2$ film deposition by Laser CVD)

  • 류지호;소황영;김영훈;성영권
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1995년도 하계학술대회 논문집 C
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    • pp.1149-1151
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    • 1995
  • In order to examine the deposition mechanism for $SiO_2$ by ArF(193nm) excimer Laser using $Si_2H_6$ and $N_2O$ gas mixture, deposition rate and refractive index were measured and creative modeling on film deposition was established by suggesting now precursor and film growing mechanism.

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Cu 배선의 평탄화를 위한 ECMD에 관한 연구 (Electro-chemical Mechanical Deposition for Planarization of Cu Interconnect)

  • 정석훈;서헌덕;박범영;박재홍;박성민;정문기;정해도;김형재
    • 한국전기전자재료학회논문지
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    • 제18권9호
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    • pp.793-797
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    • 2005
  • This study introduces Electro-chemical Mechanical Deposition(ECMD) lot making Cu interconnect. ECMD is a novel technique that has ability to deposit planar conductive films on non-planar substrate surfaces. Technique involves electrochemical deposition(ECD) and mechanical sweeping of the substrate surface Preferential deposition into the cavities on the substrate surface nay be achieved through two difference mechanisms. The first mechanism is more chemical and essential. It involves enhancing deposition into the cavities where mechanical sweeping does not reach. The second mechanism involves reducing deposition onto surface that is swept. In this study, we demonstrate ECMD process and characteristic. We proceeded this experiment by changing of distribution of current density on divided water area zones and use different pad types.

입자하전량에 따른 클린룸 수직벽체로의 입자침착 특성 (Characteristics of Particle Deposition onto Cleanroom Wall Panel for Varying Particle Charging Rates)

  • 김종준;노광철;성상철;백선호;오명도
    • 대한설비공학회:학술대회논문집
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    • 대한설비공학회 2008년도 하계학술발표대회 논문집
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    • pp.725-730
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    • 2008
  • In this study, we found out charged particle's deposition characteristic by experiments of $0.5{\mu}m$, $1.0{\mu}m$, $3.0{\mu}m$ size particle's concentration decay. We carried out the experiments on charged particle deposition onto the vertical cleanroom wall panel and some other fundamental experiments. The particle deposition mechanism is consist of sedimentation, convection, diffusion, thermophoresis, electrostatic and so on. Particle size determines mainly working deposition mechanism. The charged particle is made with corona discharge that are constituted field charging and diffusion charging. In addition, this combinational mechanism is called combined charging. The type of corona discharge determines quantity of particle electrical charge. In conclusion, we assumed that quantity of particle electrical charge accelerations deposition velocity onto the vertical cleanroom wall panel and proved it. And we figured out particle's deposition characteristic through compared between our experiment's results.

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A Study of Deposition Mechanism of Laser CVD SiO2 Film

  • Sung, Yung-Kwon;Song, Jeong-Myeon;Moon, Byung-Moo
    • Transactions on Electrical and Electronic Materials
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    • 제4권5호
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    • pp.33-37
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    • 2003
  • This study was performed to investigate the deposition mechanism of SiO$_2$ by ArF excimer laser(l93nm) CVD with Si$_2$H$\_$6/ and N$_2$O gas mixture and evaluate laser CVD quantitatively by modeling. With ArF excimer laser CVD, thin films can be deposited at low temperature(below 300$^{\circ}C$), with less damage and good uniformity owing to generation of conformal reaction species by singular wavelength of the laser beam. In this study, new model of SiO$_2$ deposition process by laser CVD was introduced and deposition rate was simulated by computer with the basis on this modeling. And simulation results were compared with experimental results measured at various conditions such as reaction gas ratio, chamber pressure, substrate temperature and laser beam intensity.

집속이온빔의 가공 공정 메카니즘 연구 (Manufacturing Mechanism of FIB-CVD using Focused Ion Beam)

  • 강은구;최병열;이석우;홍원표;최헌종
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2004년도 추계학술대회 논문집
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    • pp.925-928
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    • 2004
  • The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its use in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries. This paper was carried out some experiments and verifications of mechanism on FIB-CVD using SMI8800 made by Seiko. FIB-CVD has in fact proved to be commercially useful for repair processes because the beam can be focused down to 0.05$\mu\textrm{m}$ dimensions and below and because the same tool can be used to sputter off material with sub-micrometer precision simply by turning off the gas ambient. Recently the chemical vapour deposition induced ion beam has been required more deposition rate and accurate pattern because of trying to manufacture many micro and nano parts. Therefore this paper suggested the optimization parameters and discussed some mechanism of chemical vapour deposition induced ion beam on FIB-CVD for simple pattern.

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펄스레이저 증착법에 의한 실리콘 나노결정 형성 메커니즘 (Formation mechanism of silicon nanocrystals fabricated by pulsed laser deposition)

  • 김종훈;전경아;김건희;이상렬
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.162-164
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    • 2004
  • Nanocrystalline silicon(nc-Si) thin films on the silicon substrates have been prepared by pulsed laser deposition(PLD). The optical and structural properties of films have been investigated depending on deposition temperature, annealing, and oxidation process. When the deposition temperature increased, photoluminescence(PL) intensity abruptly decreased and peaks showed red shift. Annealing process could reduce the number of defect centers. Oxidation had a considerable effect upon the formation and isolation of the nanocrystals. These results indicate that the formation mechanism of Si nanocrystals grown by PLD can be explained by three steps of growth, passivating defect centers, and isolation, sequentially.

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정전압에 따른 클린룸 벽체에서의 입자침착 특성 (Characteristics of Particle Deposition onto the Cleanroom Wall Panel with Electrostatic Voltages)

  • 노광철;손영태;김종준;오명도
    • 설비공학논문집
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    • 제18권12호
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    • pp.1033-1038
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    • 2006
  • We carried out the experiments on particle deposition onto the cleanroom wall panels. And then we investigated the particle deposition characteristic coefficients for electrostatic voltages and particle size. It was found that there is little difference in characteristics of the particle deposition between the steel panel and the anti-static coating panel. In case of that the particle size is under $1.0{\mu}m$, the particle deposition characteristic coefficient becomes larger as the electrostatic voltage induced to the cleanroom wall panel is increasing. Where in case of that the particle size is over $3.0{\mu}m$, the particle deposition characteristic coefficients do not show any differences with the electrostatic voltages. It is due to that the electrostatic force is the major particle transport mechanism for submicron particles, while the gravitational settling is the major particle transport mechanism for overmicron particles when the electro-static voltages are induced to the cleanroom wall panel.

스프레이 코팅 기술 (Spray Coating Technology)

  • 이창희
    • 한국분무공학회지
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    • 제13권4호
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    • pp.193-199
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    • 2008
  • Spray coating is a versatile surface modification technology in which coating is built-up based on the successive deposition of micron-scaled particles. Depending on the coating materials, the coatings can meet the required mechanical properties, corrosion resistance, and other properties of base materials. Spraying processes are mainly classified into thermal and kinetic spraying according to their bonding mechanism and deposition characteristics. Specifically, thermal spraying process can be further classified into many categories based on the design and mechanism of the process, such as frame spraying, arc spraying, atmospheric plasma spraying (APS), and high velocity oxygen-fuel (HVOF) spraying, etc. Kinetic spraying or cold gas dynamic spraying is a newly emerging coating technique which is low-temperature and high-pressure coating process. In this paper, overall view of thermal and kinetic spray coating technologies is discussed in terms of fundamentals and industrial applications. The technological characteristics and bonding mechanism of each process are introduced. Deposition behavior and properties of technologically remarkable materials are reviewed. Furthermore, industrial applications of spray coating technology and its potentials are prospected.

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음극표면 pH 측정에 의한 Ni-P합금의 전착기구 고찰 (Investigation of the mechanism of Ni-P alloy deposition using by in-situ surface pH measurement during electrodeposition)

  • 이규환;장도연;김동수;이상열;권식철;강성군
    • 한국표면공학회지
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    • 제35권2호
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    • pp.93-100
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    • 2002
  • To better understand the codeposition mechanism of phosphorous, surface pH and potential of cathode were measured during electrodeposition of Ni-P alloys. The pH of cathode surface was measured using a flat-bottom glass pH electrode and a 500 mesh gold gauze as cathode. The cathode surface pH was increased with increasing the current density and always higher than the pH in the bulk solution. As a result of overplotting the surface pH and cathode potential on the Pourbaix diagram, it was found that cathode surface shift to the domain of predominant of $H_2$$PO3$-or $H_2$$PO_2$-. Additionally, new deposition mechanism was suggested that $H_2$ $PO_2$- and $H_2$$PO_3$- play important roles in the deposition reaction of Ni-P alloys.