• Title/Summary/Keyword: Deposition Equipment

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High resolution size characterization of particulate contaminants for radioactive metal waste treatment

  • Lee, Min-Ho;Yang, Wonseok;Chae, Nakkyu;Choi, Sungyeol
    • Nuclear Engineering and Technology
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    • v.53 no.7
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    • pp.2277-2288
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    • 2021
  • To regulate the safety protocols in nuclear facilities, radioactive aerosols have been extensively researched to understand their health impacts. However, most measured particle-size distributions remain at low resolutions, with the particle sizes ranging from nanometer to micrometer. This study combines the high-resolution detection of 500 size classes, ranging from 6 nm to 10 ㎛, for aerodynamic diameter distributions, with a regional lung deposition calculation. We applied the new approach to characterize particle-size distributions of aerosols generated during the plasma arc cutting of simulated non-radioactive steel alloy wastes. The high-resolution measured data were used to calculate the deposition ratios of the aerosols in different lung regions. The deposition ratios in the alveolar sacs contained the dominant particle sizes ranging from 0.01 to 0.1 ㎛. We determined the distribution of various metals using different vapor pressures of the alloying components and analyzed the uncertainties of lung deposition calculations using the low-resolution aerodynamic diameter data simultaneously. In high-resolution data, the changes in aerosols that can penetrate the blood system were better captured, correcting their potential risks by a maximum of 42%. The combined calculations can aid the enhancement of high-resolution measuring equipment to effectively manage radiation safety in nuclear facilities.

Aerosol Deposition Nozzle Design for Uniform Flow Rate: Divergence Angle and Nozzle Length

  • Kim, Jae Young;Kim, Young Jin;Jeon, Jeong Eun;Jeon, Jun Woo;Choi, Beom Soo;Choi, Jeong Won;Hong, Sang Jeen
    • Journal of the Semiconductor & Display Technology
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    • v.21 no.2
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    • pp.38-44
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    • 2022
  • Plasma density in semiconductor fabrication equipment becomes higher to achieve the improved the throughput of the process, but the increase of surface corrosion of the ceramic coated chamber wall has been observed by the increased plasma density. Plasma chamber wall coating with aerosol deposition prefer to be firm and uniform to prevent the potential creation of particle inside the chamber from the deformation of the coating materials, and the aerosol discharge nozzle is a good control factor for the deposited coating condition. In this paper, we investigated the design of the nozzle of the aerosol deposition to form a high-quality coating film. Computational fluid dynamics (CFD) study was employed to minimize boundary layer effect and shock wave. The degree of expansion, and design of simulation approach was applied to found out the relationship between the divergence angle and nozzle length as the key parameter for the nozzle design. We found that the trade-off tendency between divergence angle and nozzle length through simulation and quantitative analysis, and present the direction of nozzle design that can improve the uniformity of chamber wall coating.

Abnormal Detection in 3D-NAND Dielectrics Deposition Equipment Using Photo Diagnostic Sensor

  • Kang, Dae Won;Baek, Jae Keun;Hong, Sang Jeen
    • Journal of the Semiconductor & Display Technology
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    • v.21 no.2
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    • pp.74-84
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    • 2022
  • As the semiconductor industry develops, the difficulty of newly required process technology becomes difficult, and the importance of production yield and product reliability increases. As an effort to minimize yield loss in the manufacturing process, interests in the process defect process for facility diagnosis and defect identification are continuously increasing. This research observed the plasma condition changes in the multi oxide/nitride layer deposition (MOLD) process, which is one of the 3D-NAND manufacturing processes through optical emission spectroscopy (OES) and monitored the result of whether the change in plasma characteristics generated in repeated deposition of oxide film and nitride film could directly affect the film. Based on these results, it was confirmed that if a change over a certain period occurs, a change in the plasma characteristics was detected. The change may affect the quality of oxide film, such as the film thickness as well as the interfacial surface roughness when the oxide and nitride thin film deposited by plasma enhenced chemical vapor deposition (PECVD) method.

In-situ Process Monitoring Data from 30-Paired Oxide-Nitride Dielectric Stack Deposition for 3D-NAND Memory Fabrication

  • Min Ho Kim;Hyun Ken Park;Sang Jeen Hong
    • Journal of the Semiconductor & Display Technology
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    • v.22 no.4
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    • pp.53-58
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    • 2023
  • The storage capacity of 3D-NAND flash memory has been enhanced by the multi-layer dielectrics. The deposition process has become more challenging due to the tight process margin and the demand for accurate process control. To reduce product costs and ensure successful processes, process diagnosis techniques incorporating artificial intelligence (AI) have been adopted in semiconductor manufacturing. Recently there is a growing interest in process diagnosis, and numerous studies have been conducted in this field. For higher model accuracy, various process and sensor data are required, such as optical emission spectroscopy (OES), quadrupole mass spectrometer (QMS), and equipment control state. Among them, OES is usually used for plasma diagnostic. However, OES data can be distorted by viewport contamination, leading to misunderstandings in plasma diagnosis. This issue is particularly emphasized in multi-dielectric deposition processes, such as oxide and nitride (ON) stack. Thus, it is crucial to understand the potential misunderstandings related to OES data distortion due to viewport contamination. This paper explores the potential for misunderstanding OES data due to data distortion in the ON stack process. It suggests the possibility of excessively evaluating process drift through comparisons with a QMS. This understanding can be utilized to develop diagnostic models and identify the effects of viewport contamination in ON stack processes.

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ELECTROSLAG STRIP OVERLAY OF PIPE, FITTINGS, AND PRESSURE VESSELS

  • Dan, Capitanescu
    • Proceedings of the KWS Conference
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    • 2002.10a
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    • pp.355-360
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    • 2002
  • ElectroSlag Strip Overlaying (ESSO) process has been around since 1970. ESSO process had limited acceptance due to a few problems associated with the use of this process in its very early stage. Limited knowledge and, most significantly, poor quality of the equipment and welding flux gave the ESSO process a bad name. However, this process is well accepted today and used in North America, Europe and Japan. The ESSO process provides low dilution overlays at high deposition rates, excellent and consistent deposit chemistry with excellent surface quality, and virtually no defects. Capitan has taken this process one step further through extensive research and development of the process itself as well as the equipment. The improvement brought to the process warranted the issuance in May 2000 of an US patent. This study demonstrates the feasibility of this process with immediate positive production results. The main achievements of this work are as follows: $\textbullet$ Development of six various strip-flux combinations on three different base materials: carbon steel, $\frac{1}{4}$ Cr/.5 Mo and 2 $\frac{1}{4}$ Cr/l Mo, fully tested with: penetrant, ultrasound, bends, hardness, overlay chemistry, corrosion and hydrogen disbonding. $\textbullet$ 12" dia. 90 hot formed elbows from straight pipe electroslag overlayed with "1 layer" and "2 layer" Alloy 625 $\textbullet$ a very unique development of miniaturized overlaying equipment able to perform overlay in pipe with diameters as low as 10" (254 mm). This development has large applications in the field of offshore, petrochemical, refining, pulp and paper and power generation industries. The aftermath of this development was its immediate acceptance by major end users with the completion of four projects of overlayed pipe in the USA and Far East Asia.

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A Study on Wind-drift Sand Deposition by Vegetation and Coastal Debris using a Wind Tunnel Test (식생 및 해안표착물에 의한 비사 퇴적 풍동실험 연구)

  • Je, Young Jun;Jeon, Yong Ho;Yoon, Han Sam
    • Journal of the Korean Society for Marine Environment & Energy
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    • v.16 no.3
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    • pp.163-170
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    • 2013
  • The correlation and interaction mechanisms between marine debris and the vegetation zone were studied on the Jinu-do natural beach of the Nakdong river estuary. Laboratory wind tunnel experiments were carried out under the wind-field and bottom-sand conditions using wind tunnel test equipment to investigate the sedimentation characteristics of wind-drift sand deposition around marine debris and the vegetation zone. The major environmental factors/loads considered in this study were the motion of sand by wind on the beach, deposition of marine debris, and change in the vegetation zone/line. When the marine debris was installed in the wind tunnel, deposition at the front of the structure appeared first by wind action, and then deposition developed from behind at 70% of the front ground level. In contrast, in the case of vegetation, the deposition phenomenon appeared first from behind the vegetation zone/line, and was 60% higher than the front. When the height of the debris and vegetation was the same, the required experimental time to bury the vegetation completely was about twice that of the marine debris.

A study on copper thin film growth by chemical vapor deposition onto silicon substrates (실리콘 기판 위에 화학적 방법으로 증착된 구리 박막의 특성 연구)

  • 조남인;박동일;김창교;김용석
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.6 no.3
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    • pp.318-326
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    • 1996
  • This study is to investigate a chemical vapor deposition technique of copper film which is expected to be more useful as metallizations of microcircuit fabrication. An experimental equipment was designed and set-up for this study, and a Cu-precursor used that is a metal-organic compound, named (hfac)Cu(I)VTMS ; (hevaflouoroacetylacetonate trimethyvinylsilane copper). Base pressure of the experimental system is in $10^{-6}$ Torr, and the chamber pressure and the substrate temperature can be controlled in the system. Before the deposition of copper thin film, tungsten or titanium nitride film was deposited onto the silicon wafer. Helium has been used as carrier gas to control the deposition rate. As a result, deposition rate was measured as $1,800\;{\AA}/min$ at $220^{\circ}C$ which is higher than the results of previous studies, and the average surface roughness was measured as about $200\;{\AA}$. A deposition selectivity was observed between W or TiN and $SiO_{2}$ substrates below $250^{\circ}C$, and optimum results are observed at $180^{\circ}C$ of substrate temperature and 0.8 Torr of chamber pressure.

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Optimizing the Plasma Deposition Process Parameters of Antistiction Layers Using a DOE (Design of Experiment) (실험 계획법을 이용한 점착방지막용 플라즈마 증착 공정변수의 최적화 연구)

  • Cha Nam-Goo;Park Chang-Hwa;Cho Min-Soo;Park Jin-Goo;Jeong Jun-Ho;Lee Eung-Sug
    • Korean Journal of Materials Research
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    • v.15 no.11
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    • pp.705-710
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    • 2005
  • NIL (nanoimprint lithography) technique has demonstrated a high potential for wafer size definition of nanometer as well as micrometer size patterns. During the replication process by NIL, the stiction between the stamp and the polymer is one of major problems. This stiction problem is moi·e important in small sized patterns. An antistiction layer prevents this stiction ana insures a clean demolding process. In this paper, we were using a TCP (transfer coupled plasma) equipment and $C_4F_8$ as a precursor to make a Teflon-like antistiction layer. This antistiction layer was deposited on a 6 inch silicon wafer to have nanometer scale thicknesses. The thickness of deposited antistiction layer was measured by ellipsometry. To optimize the process factor such as table height (TH), substrate temperature (ST), working pressure (WP) and plasma power (PP), we were using a design of experimental (DOE) method. The table of full factorial arrays was set by the 4 factors and 2 levels. Using this table, experiments were organized to achieve 2 responses such as deposition rate and non-uniformity. It was investigated that the main effects and interaction effects between parameters. Deposition rate was in proportion to table height, working pressure and plasma power. Non-uniformity was in proportion to substrate temperature and working pressure. Using a response optimization, we were able to get the optimized deposition condition at desired deposition rate and an experimental deposition rate showed similar results.

Progress in research and development for REBCO coated conductors by reactive co-evaporation

  • Oh, S.S.;Kim, H.S.;Ha, H.S.;Ko, R.K.;Ha, D.W.;Lee, H.;Moon, S.H.;Yoo, S.I.
    • Progress in Superconductivity and Cryogenics
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    • v.15 no.4
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    • pp.1-5
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    • 2013
  • This paper reviews recent progress in research and development (R&D) of reactive co-evaporation for high performance REBCO coated conductors in Korea. Two types of reactive co-evaporation methods were developed for the deposition of SmBCO and GdBCO superconducting layers respectively on the IBAD (Ion Beam Assisted Deposition)-MgO template in the Korean coated conductor project. Batch type reactive co-evaporation equipment and its processing were developed for SmBCO coated conductors at Korea Electrotechnology Research Institute (KERI) in conjunction with the Korea Advanced Institute of Science and Technology (KAIST), and a very high critical current exceeding 1,000 A/cm at 77 K in the self field was achieved through the optimization of deposition parameters. Reel-to-reel type reactive co-evaporation processing with a high conversion rate was also developed, while long length GdBCO coated conductors have been routinely produced by SuNAM Co. The minimum critical current of 422 A/cm-w at 77 K in self field was confirmed for 1 km-long GdBCO tape.

Atomic Layer Deposition for Display Applications

  • Park, Jin-Seong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.76.1-76.1
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    • 2013
  • Atomic Layer Deposition (ALD) has remarkably developed in semiconductor and nano-structure applications since early 1990. Now, the advantages of ALD process are well-known as controlling atomic-level-thickness, manipulating atomic-level-composition control, and depositing impurity-free films uniformly. These unique properties may accelerate ALD related industries and applications in various functional thin film markets. On the other hand, one of big markets, Display industry, just starts to look at the potential to adopt ALD functional films in emerging display applications, such as transparent and flexible displays. Unlike conventional ALD process strategies (good quality films and stable precursors at high deposition processes), recently major display industries have suggested the following requirements: large area equipment, reasonable throughput, low temperature process, and cost-effective functional precursors. In this talk, it will be mentioned some demands of display industries for applying ALD processes and/or functional films, in terms of emerging display technologies. In fact, the AMOLED (active matrix organic light emitting diode) Television markets are just starting at early 2013. There are a few possibilities and needs to be developing for AMOLED, Flexible and transparent Display markets. Moreover, some basic results will be shown to specify ALD display applications, including transparent conduction oxide, oxide semiconductor, passivation and barrier films.

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