• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.727-732
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• 1998

Ag-deposited graphite powder was prepared by a chemical reduction method of metal particles onto graphite powder. X-ray diffraction observation of Ag-deposited graphite powder revealed that silver existed in a metallic state, but not in an oxidized one. From SEM measurement, ultrafine silver particles were highly dispersed on the surface of graphite particles. Cylindrical lithium ion secondary battery was manufactured using Ag-deposited graphite anodes and $LiCoO_2$ cathodes. The cycleability of lithium ion secondary battery using Ag-deposited graphite anodes was superior to that of original graphite powder. The improved cycleability may be due to both the reduction of electric resistance between electrodes and the highly durable Ag-graphite anode.

• Journal of the Korean Ceramic Society
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• v.45 no.4
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• pp.245-249
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• 2008

The SiC and ZrC are critical and essential materials in TRISO coated fuel particles since they act as protective layers against diffusion of metallic and gaseous fission products and provides mechanical strength for the fuel particle. However, SiC and ZrC have critical disadvantage that SiC loses chemical integrity by thermal dissociation at high temperature and mechanical properties of ZrC are weaker than SiC. In order to complement these problems, we made new combinations of the coating layers that the ZrC layers composed of SiC. In this study, after Silicon carbide(SiC) were chemically vapor deposited on graphite substrate, Zirconium carbide(ZrC) were deposited on SiC/graphite substrate by using Zr reaction technology with Zr sponge materials. The different morphologies of sub-deposited SiC layers were correlated with microstructure, chemical composition and mechanical properties of deposited ZrC films. Relationships between deposition pressure and microstructure of deposited ZrC films were discussed. The deposited ZrC films on SiC of faceted structure with smaller grain size has better mechanical properties than deposited ZrC on another structure due to surface growth trend and microstructure of sub-deposited layer.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.101-107
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• 1995

To improve the leakage current, we developed two step sputtering method where PZT thin film in first deposited at room temperature followed by 600.deg. C deposition. The method used an amorphous PZT layer deposited at room temperature to keep a stable interface during sputtering at high temperature. PZT thin films were deposited on Pt/Ti/SiO$_{2}$/Si substrate at room temperature and 600.deg. C sequentially. The effect of the layer deposited at room temperature was investigated with regard to I-V characteristics and P-E hysteresis loop. In the case of the sample with the layer deposited at room temperature, both leakage current and dielectric constant were decreased. The thicker the layer deposited at room temperature was, the lower dielectric constant was. However, leakage current was indepenent of the variation of the thickness ratio. The sample with 200$\AA$ of the layer deposited at room temperature showed the most promising results in both dielectric constant and leakage current.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.64-68
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• 1995

Silicon films were deposited at $430^{\circ}C$ by remote plasma chemical vapor deposition(RPECVD) with a gas mixture of $Si_2H_6/SiF_4/H_2$. The silicon films deposited without and with $SiF_4$ were characterized using atomic force microscopy(AFM), transmission electron microscopy(TEM) and X-ray diffraction(XRD). Both silicon films have the same rugged surface morphology, but, the silicon film deposited with $SiF_4$ exhibits more rugged. The silicon film deposited without $SiF_4$ is amorphous, whereas the silicon film deposited with $SiF_4$ is polycrystalline with very small needle-like grains which are perpendicular to the substrate and uniformly distributed in the thickness of the film. The silicon film deposited with $SiF_4$ was found to have a preferred orientation along the growth direction with the<110> of the film parallel to the <111> of the substrate. The effect of $SiF_4$ during RPECVD was discussed.

• Fashion & Textile Research Journal
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• v.22 no.3
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• pp.386-398
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• 2020

This study compared dip-coating and in situ polymerization methods for the development of nanofiber-based E-textile using polypyrrole. Nanofiber webs were fabricated by electrospinning an aqueous poly (vinyl alcohol) (PVA) solution. Subsequently, the PVA nanofiber web underwent thermal treatment to improve water resistance. Dip-coating and in situ polymerization methods were used to deposit polypyrrole on the surfaces of the nanofiber web. An FE-SEM analysis was also conducted to examine specimen surface characteristics along with EDS and FT-IR that analyzed the chemical bonding between polypyrrole and specimens. The line resistance and sheet resistance of the treated specimens were measured. Finally, an electrocardiogram (ECG) was measured with textile sensors made of the polypyrrole-deposited PVA nanofiber webs. The polypyrrole-deposited PVA nanofiber webs fabricated by dip-coating dissolved in the dip-coating solution and indicated damage to the nanofibers. However, in the case of in situ polymerization, polypyrrole nanoparticles were deposited on the surface and inter-web structure of the PVA nanofiber web. The resistance measurements indicated that polypyrrole-deposited PVA nanofiber webs fabricated by in situ polymerization with an average sheet resistance of 5.3 k(Ω/□). Polypyrrole-deposited PVA nanofiber webs fabricated by dip-coating showed an average sheet resistance of 57.3 k(Ω/□). Polypyrrole-deposited PVA nanofibers fabricated by in situ polymerization showed a lower line and sheet resistance; in addition, they detected the electrical activity of the heart during ECG measurements. The electrodes made from polypyrrole-deposited PVA nanofiber webs by in situ polymerization showed the best performance for sensing ECG signals among the evaluated specimens.

• Korean Journal of Materials Research
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• v.30 no.4
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• pp.169-175
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• 2020

Silicon nitride thin films are deposited by RF (13.57 MHz) magnetron sputtering process using a Si (99.999 %) target and with different ratios of Ar/N₂ sputtering gas mixture. Corning G type glass is used as substrate. The vacuum atmosphere, RF source power, deposit time and temperature of substrate of the sputtering process are maintained consistently at 2 ~ 3 × 10^-3 torr, 30 sccm, 100 watt, 20 min. and room temperature, respectively. Cross sectional views and surface morphology of the deposited thin films are observed by field emission scanning electron microscope, atomic force microscope and X-ray photoelectron spectroscopy. The hardness values are determined by nano-indentation measurement. The thickness of the deposited films is approximately within the range of 88 nm ~ 200 nm. As the amount of N₂ gas in the Ar:N₂ gas mixture increases, the thickness of the films decreases. AFM observation reveals that film deposited at high Ar:N₂ gas ratio and large amount of N₂ gas has a very irregular surface morphology, even though it has a low RMS value. The hardness value of the deposited films made with ratio of Ar:N₂=9:1 display the highest value. The XPS spectrum indicates that the deposited film is assigned to non-stoichiometric silicon nitride and the transmittance of the glass with deposited SiO₂-Si_xN_y thin film is satisfactory at 97 %.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.862-868
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• 1996

Cadmium sulfide is commonly used as the window material for thin film solar cells, and can be prepared by several techniques such as sputtering, spray pyrolysis, close spaced sublimation (CSS), thermal evaporation, solution growth methods, etc. In this study, CdS films were deposited by thermal evaporation, close spaced sublimation, and solution growth methods, respectively, and the effects of the methods on physical properties of polycrystalline CdS deposited on ITO/glass were investigated. Also, the effects of variously prepared CdS thin films on the physical properties of CdTe deposited on the CdS were investigated. The thickness of polycrystalline CdS films was maintained at $0.3\mu\textrm{m}$ except for the solution grown CdS when $0.2\mu\textrm{m}$ thick CdS was deposited. After the deposition, all the samples were annealed at $400^{\circ}C$ or $500^{\circ}C$ in H2 atmosphere. To investigate physical properties of the deposited and annealed CdS thin films, UV-VIS spectro-photometry, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES), and cross sectional transmission electron microscopy(XTEM) were used to analyze grain size, crystal structure, preferred orientation, optical properties, etc. The annealed CdS showed the bandedge transition at 510nm and the optical transmittance high than 80% for all of the variously deposited films. XRD results showed that CdS thin films variously deposited and annealed had the same hexagonal structures, however, showed different preferred orientations. CSS grown CdS had [103] preferred orientation, thermally evaporated CdS had [002], and CdS grown by the solution growth had no preferred orientation. The largest grain size was obtained for the CSS grown CdS while the least grain size was obtained for the solution grown CdS. Some of the physical properties of CdTe deposited on the CdS thin film such as grain size at the junction and grain orientation were affected by the physical properties of CdS thin films.

• Journal of the Korean institute of surface engineering
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• v.35 no.1
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• pp.33-38
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• 2002

For the evaluation of nucleation and growth behaviors influenced by substrate properties, such as surface energy, structure and electrical properties, chromium nitride films (CrN) were deposited on various substrates (glass, AISI 1040 steel and Si (110) by unbalanced magnetron sputtering. X-ray diffraction and Atomic Force Microscopy (AFM) were used to study the microstructure and grain growth as a function of deposition time. The diffraction patterns of CrN thin films deposited on Si (110) exhibited crystalline structure with highly preferred orientation of (200) plane parallel to the substrate, whereas the films deposited on glass and AISI 1040 exhibited preferred orientations (200) and minor orientation (111), (311) or (220) plane. The orientation of films deposited both on glass and Si substrates did not depend on the bias voltage (Vs). The grain growth and structure of film deposited on AISI 1040 steel substrate are strongly influenced by the substrate bias in comparison with that deposited onto glass and Si substrates. The differences in the structure and grain growth of CrN films deposited onto different substrates are predominantly related to the properties of the substrate (structure and electrical conductivity).

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.20 no.12
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• pp.113-122
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• 2021

Complicated residual stress distributions occur in the vicinity of a deposited region via directed energy deposition (DED) process owing to the rapid heating and cooling cycle of the deposited region and the substrate. The residual stress can cause defects and premature failure in the vicinity of the deposited region. Several heat treatment technologies have been extensively researched and applied on the part deposited by the DED process to relieve the residual stress. The aim of this study was to investigate the residual stress characteristics of a specimen fabricated by DED and a quenching process using thermomechanical analyses. A coupled thermomechanical analysis technique was adopted to predict the residual stress distribution in the vicinity of the deposited region subsequent to the quenching step. The results of the finite element (FE) analyses for the deposition and the cooling measures show that the residual stress in the vicinity of the deposited region significantly increases after the completion of the elastic recovery. The results of the FE analyses for the heating and quenching stages further indicate that the residual stress in the vicinity of the deposited region remarkably increases at the initial stage of quenching. In addition, it is observed that the residual stress for quenching is lesser than that after the elastic recovery, irrespective of the deposited material.

• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.886-892
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• 1994

Structural and electrical properties of BaTiO3 thin films deposited on Pt/SiO2/Si substrates by RF magnetron sputtering method have been investigated. Crystallization behavior and electrical properties were studied for the films deposited under various sputtering gas compositions (Ar+O2 gas mixture) and substrate temperatures. All the films deposited above 50$0^{\circ}C$ were all crystallized and their preferred orientation changed from (001) to (111) with the addition of oxygen gas. The dielectric constant of films deposited in pure argon was about 110 and showed little dependence on the substrate temperature. But that was increased as the ratio of O2/Ar increased and its substrate temperature dependence was discernible. The highest dielectric constant reached to 550. In addition, the films deposited in mixed gas showed stable dielectric properties against the frequency and temperature.