• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집
• /
• pp.301-304
• /
• 2002

We investigated the structural and electrical properties of Ce-doped Ba($Zr_{0.2}Ti_{0.8}$)$O_3$(BCZT) thin films with a mole fraction of x=0.2 and a thickness about 100 nm. BCZT films were prepared on Pt/Ti/$SiO_2$/Si substrate by a RF magnetron sputtering system. We have measured the thickness profile with Ar/$O_2$ ratio and the surface roughness. It was observed that the oxygen gas, which introduced during the film deposition, have an influence on the roughness of the film and the film roughness was reduced by annealing from 2.33 nm to 2.02 m (RMS at $500^{\circ}C$, Ar:6 scrim, $O_2$:6 sccm). We have found that annealing procedure after top electrode deposit can reduce the dissipation factor.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
• /
• pp.151-154
• /
• 2003

AlN/Al/SiO$_2$/Si thin films for application to FBAR(Film Bulk Acoustic Resonator) devices were prepared by FTS(Facing Targets sputtering system) apparatus which provides a stable discharge at low gas pressures and can deposit high quality thin films because of the substrate located apart from the plasma. The AlN thin films were deposited on a $SiO_2(1{\mu}m)/Si(100)$ substrate using an Al bottom electrode. The process parameters were fixed such as sputering power of 200W, working pressures of 1mTorr and AlN thin film thickness of 800nm, respectively and crytallographic characteristics of AlN thin films were investigated as a function of $N_2$ gas flow rate$[N_2/(N_2+Ar)]$. Thickness of AlN thin films were measured by $\alpha$-step, the crystallographic characteristics and c-axis preferred orientation were evaluated by XRD.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
• /
• pp.103-106
• /
• 2002

We prepared $Co_{77}Cr_{20}Ta_{3}$ thin film with Facing Targets Sputtering Apparatus. which can deposit a high quality thin film CoCrTa magnetic layer for Perpendicular magnetic recording media. In order to obtain Good Crystal orientation of CoCrTa thin films. We prepared Thin Films on slide glass substrate. The thickness of Buffer-layer were varied from 10 to 50 nm and Magnetic layer thickness fixed 100[nm]. input current was varied from 0.2[A] to 0.5[A]. Substrate temperature was varied from room temperature to ${250^{\circ}C}$ respectively. The crystal orientation of the CoCrTa film were examined with XRD. Introduce Buffer-layer thin films showed improvement of dispersion angle of c-axis orientation (${\Delta\theta}_{50}$).

• 대한기계학회논문집A
• /
• 제30권10호
• /
• pp.1314-1319
• /
• 2006

This paper describes the novel fabrication method of the high-aspect-ratio nano structure which is impossible by conventional method using a shadow mask and a Deep X-ray Lithography (DXRL). The shadow mask with $1{\mu}m-sized$ apertures is fabricated on the silicon membrane using a conventional UV-lithography. The size of aperture is reduced to 200nm by accumulated low stress silicon nitride using a LPCVD (low pressure chemical vapor deposition) process. The X-ray mask is fabricated by depositing absorber layer (Au, $3{\mu}m$) on the back side of nano shadow mask. The thickness of an absorber layer must deposit dozens micrometers to obtain contrast more than 100 for a conventional DXRL process. The thickness of $3{\mu}m-absorber$ layer can get sufficient contrast using a central beam stop method, blocking high energy X-rays. The nano circle and nano line, 200nm in diameter in width, respectively, were demonstrated 700nm in height with a negative photoresist of SU-8.

• 한국전기전자재료학회논문지
• /
• 제16권5호
• /
• pp.361-364
• /
• 2003

It was investigated that the structural and electrical Properties of Ce-doped Ba(Zr$_{x}$Ti$_{1-x}$ )O$_3$ (BCZT) thin films with a mole fraction of x=0.2 and a thickness about 100 nm. BCZT films were prepared on Pt/Ti/SiO$_2$/Si substrate by a RF magnetron sputtering system. We have measured the thickness profile with Ar/O$_2$ ratio and the surface roughness. It was observed that the oxygen gas, which introduced during the film deposition, have an influence on the roughness of the film and the film roughness was reduced by annealing from 2.33 nm to 2.02 nm (RMS at 500 $^{\circ}C$, Ar:6 sccm, $O_2$:6 sccm). It was found that annealing procedure after top electrode deposit can reduce the dissipation factor.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
• /
• pp.448-448
• /
• 2007

OLED has many advantages of low voltage operation, self radiation, light weight, thin thickness, wide view angle and fast response time to overcome existing liquid crystal display (LCD)'s weakness. Therefore, It draws attention as promising display and has already developed for manufactured goods. Also, OLED is regarded as a only substitute of flexible display with a thin display. However, Indium tin oxide(ITO) thin film for electrode of OLED shows a low electrical properties and is impossible to deposit at high thermal condition because electrical characteristics of ITO is getting worse. One of the ways to realize an improved flexible OLED is to use high internal efficiency electrodes, which have higher work function than those single layer of ITO films of the same thickness. The high internal efficiency electrodes film is developed with structure of nickel oxide for bottom Emission Type of OLED.

• Nuclear Engineering and Technology
• /
• 제50권5호
• /
• pp.724-730
• /
• 2018

Chromium and chromium nitride were selected as potential barriers to prevent fuel-clad chemical interaction (FCCI) between the cladding and the fuel material. In this study, ferritic/martensitic HT-9 steel and misch metal were used to simulate the reaction between the cladding and fuel fission product, respectively. Radio frequency magnetron sputtering was used to deposit Cr and CrN films onto the cladding, and the gas flow rates of argon and nitrogen were fixed at certain values for each sample to control the deposition rate and the crystal structure of the films. The samples were heated for 24 h at 933 K through the diffusion couple test, and considerable amount of interdiffusion (max. thickness: $550{\mu}m$) occurred at the interface between HT-9 and misch metal when the argon and nitrogen were used individually. The elemental contents of misch metal were detected at the HT-9 through energy dispersive X-ray spectroscopy due to the interdiffusion. However, the specimens that were sputtered by mixed gases (Ar and $N_2$) exhibited excellent resistance to FCCI. The thickness of these CrN films were only $4{\mu}m$, but these films effectively prevented the FCCI due to their high adhesion strength (frictional force ${\geq}1,200{\mu}m$) and dense columnar microstructures.

• 지구물리
• /
• 제9권3호
• /
• pp.273-286
• /
• 2006

The Kyongsang Basin is the most representative Cretaceous basin in the Korean Peninsula where extensive crustal deformation and non-marine sedimentation took place in the early Cretaceous period. The lithology of the basement of the basin and adjacent areas is comprised of mainly Precambrian gneiss complex and Mesozoic granite intrusions. We have carried out magnetotelluric (MT) surveys to investigate the deep geoelectric structure around the Kyongsang Basin. The MT data were collected in the frequency range from 0.00042 to 320 Hz at 24 sites along a profile across the northern part of Kyongsang Basin. The results of MT inversion show that the thickness of sediments is estimated about 3 km to 9 km and the depth to base of granite intrusion is about 20 km. A remarkable discovery in this study is the highly conductive layer beneath the basin, having the resistivity of 1 ohm-m to 30 ohm-m and the thickness of about 3 km to 4 km or more. Although we are not able to reveal the nature of this layer, the result of this study could provide some basic information with respect to the formation process and deposit environment of the proto-Kyongsang Basin.

• 반도체디스플레이기술학회지
• /
• 제22권3호
• /
• pp.101-105
• /
• 2023

Organic photo Diodes (OPDi) give multiple advantages in the growing interest of the flexible optoelectronic devices. Organic semiconductors are freeform as they can deposit on any substrate, so it could be flexible. But the inorganic material photodiodes (PDs) are usually fabricated on silicon wafers which are solid. So, normally PDs are inflexible. By those reasons, we decided to make the vacuum deposited small molecule OPDi. We have investigated the OPDi's J-V characteristic by changing the thickness of p-type layer of OPDi. This device consists of indium-tin-oxide (ITO) / 2,3:6,7-dibenzanthracene (pentacene) / buckminsterfullerene (C60) / aluminum (Al). Its J-V characteristics were measured in the probe station(4156C) that can give dark condition while measuring. And for the luminance characteristics, the photocurrent was measured with the bright halogen lamp and a probe station.

• 비파괴검사학회지
• /
• 제18권3호
• /
• pp.205-210
• /
• 1998

이미 오래전부터 국내외에서 석유화학공장 등의 보온 배관에서 보온재를 벗기지 않고 배관의 부식 손상 및 잔존두께를 평가하는데 방사선투과시험법을 적용해 오고 있다. 그러나 배관 용접부의 결함 탐상에 관한 방사선투과법에 대한 국제 및 국내 코드는 이미 마련되어 있지만 배관의 두께와 내부에 존재하는 부착물(deposit) 등의 두께를 측정하는 것에 관련한 국제 및 국내 코드는 미비되어 시험 절차 및 시험 결과에 대한 시비가 근본적으로 존재할 수 밖에 없을 뿐만 아니라 표준화된 시험 기술의 미비로 현장에서 많은 시행착오를 동반하였다. 그러나 최근 이 시험법에 대한 관련 원안(protocol)을 확정하기 위해 각국에서 개별적으로 수행되었던 기존의 연구 결과들이 취합되고 있으며 부족한 부분들에 대한 연구가 국제 공동 연구 형식으로 이뤄지고 있다. 따라서 본 연구에서는 tangential radiography를 적용하여 보온된 배관의 잔존 두께를 평가할 수 있는 시험 방법을 제시하고자 하였다.