• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.102-105
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• 2005

In this study Al electrode for OLED was deposited by FTS(Facing Targets Sputtering) system which can deposit thin films with low substrate damage. The Al thin films were deposited on the cell (LiF/EML/HTL/Bottom electrode) as a function of working gas such as Ar, Kr or mixed gas. Also Al thin films were prepared with working gas pressure (1, 6 mTorr ). The film thickness and I-V curve of Al/cell were evaluated by $\alpha$-step and semiconductor parameter (HP4156A) measurement.

• Journal of the Korean Society for Nondestructive Testing
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• v.34 no.2
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• pp.171-175
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• 2014

In this study, we suggest a method to measure the thickness of thin films nondestructively using the dispersion characteristics of a surface acoustic wave propagating along the thin film surface. To measure the thickness of thin films, we deposited thin films with different thicknesses on a Si (100) wafer substrate by controlling the deposit time using the E-beam evaporation method. The thickness of the thin films was measured using a scanning electron microscope. Subsequently, the surface wave velocity of the thin films with different thicknesses was measured using the V(z) curve method of scanning acoustic microscopy. The correlation between the measured thickness and surface acoustic wave velocity was verified. The wave velocity of the film decreased as the film thickness increased. Therefore, thin film thickness can be determined by measuring the dispersion characteristics of the surface acoustic wave velocity.

• Journal of the Korean Ceramic Society
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• v.33 no.1
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• pp.25-34
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• 1996

Yttria stabilized zirconia (YSZ) thin films were prepared by the electrochemical vapor deposition (EVD) method on the porous Al2O3 substrates which were fabricated by different substrate thickness and porosity. Film growth rates decreased with increase on the substrate thickness and porosity and obeyed a parabolic rate law. Activa-tion energy calculated from the parabolic rate onstants was 69.9 kcal/mol. With increase on the deposition time, monoclinic phase was appeared and then disappeared. YSZ penetrated deeply into substrates when the EVD temperature decreased. Electrical conductivity of the films was 0.09 S/cm at 100$0^{\circ}C$ similar to the value of YSZ single crystal.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.274-274
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• 2013

We fabricate encapsulation-layer of OLED panel from organic-inorganic hybrid thin film by atomic layer deposition (ALD) molecular layer deposition (MLD) using Al2O3 as ALD process and Adipoyl Chloride (AC) and 1,4-Butanediamine as MLD process. Ellipsometry was employed to verify self-limiting reaction of MLD. Linear relationship between number of cycle and thickness was obtained. By such investigation, we found that desirable organic thin film fabrication is possible by MLD surface reaction in monolayer scale. Purging was carried out after dosing of each precursor to eliminate physically adsorbed precursor with surface. We also confirmed roughness of the organic thin film by atomic force microscopy (AFM). We deposit AC and 1,4-Butanediamine at $70^{\circ}C$ and investigated surface roughness as a function of increasing thickness of organic thin film. We confirmed precursor's functional group by IR spectrum. We calculated WVTR of organic-inorganic hybrid super-lattice epitaxial layer using Ca test. WVTR indicates super-lattice film can be possibly use as encapsulation in flexible devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.444-450
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• 2000

We prepared Co-Cr thin film for perpendicular magnetic recording media with facing targets sputtering system(FTS system) which can deposit a high quality thin film in plasma-free state and wide range of working pressure. The effect of sputtering conditions(argon gas pressure and substrate temperature) on the magnetic and the crystallographic characteristic of Co-Cr thin film was investigated. And the variation of perpendicular coercivity with the variation of film thickness was studied. As a result we obtained the high perpendicular coercivity of 1900Oe and the good dispersion angle of c-axis($\Delta$$\theta$$_{50}$) of 5$^{\circ}$on the film thickness of 100nm for the promising recording layer of perpendicular magnetic recording media.c recording media.a.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.324-327
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• 2000

ZnO(Zinc Oxide) thin films were deposited on glass substrate by Facing Targets Sputtering. Facing Targets Sputtering system can deposit thin films in plasma-free situation and change the sputtering conditions in wide range. The characteristics of ZnO thin films deposited at variation of sputtering conditions films thickness, power and substrate temperature were evaluated by XRD(x-ray diffractometer), ${\alpha}$-step (Tencor). The excellently c-axis oriented ZnO thin films were obtained at sputter pressure ImTorr, power 150W, substrate temperature 200$^{\circ}C$. In these conditions, the rocking curve of ZnO thin films deposited on glass was 3.3$^{\circ}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.185-188
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• 2000

Crystal orientation of Ni$_{18}$ $Fe_{19}$ thin films prepared by facing targets sputtering system was investigated. FTS system can deposit a high quality thin film and control deposition conditions in wide range. T he crystallographic characteristics of Ni$_{18}$ $Fe_{19}$ thin films on variation of thickness and substrate tempera ture was investigated by XRD and AFM. As a result, we obtained Ni$_{18}$ $Fe_{19}$ thin films prepared at subst rate temperature room temperature, thickness 160nm and over revealed good crystal orientation to [111] direction.irection.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.1
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• pp.75-80
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• 2010

Electroless nickel plating on porous carbon substrate was investigated. The pore sizes of carbon substrates were 16-20 ${\mu}m$ and over 20 ${\mu}m$. The carbon surface was changed from hydrophobic to hydrophilic after immersing the substrate in an ammonia solution for 40 min at $60^{\circ}C$. The contact angle of water was decreased from $85^{\circ}$ to less than $20^{\circ}$ after ammonia pretreatment. The content of phosphorous in nickel deposit was decreased with increasing pH and then deposits became crystallized. The thickness of nickel deposit was increased with increasing pH. The minimum concentration of $PdCl_2$ for the electroless nickel plating was 5 ppm and the thickness of nickel was not significantly affected by the concentration of $PdCl_2$.

• Economic and Environmental Geology
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• v.46 no.2
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• pp.153-163
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• 2013

The Ogcheon Au-Ag deposit consists of two quartz veins that fill the NE or NW-trending fissures in the metasedimentary rocks of unknown age. The quartz veins occur mainly in the massive type with partially breccia and cavity. They can be found along the strike for about minimum 50 m and varied in thickness from 0.1 to 0.3 m. The mineralogy of quartz veins from the Ogcheon deposit is mainly composed of hydrothermal alteration minerals such as pyrite, quartz, sericite, chlorite, clay minerals and sulfides including pyrite, pyrrhotite, arsenopyrite, sphalerite, chalcopyrite and galena. Fluid inclusion data from quartz indicate that homogenization temperatures and salinity of mineralization range from 184 to $362^{\circ}C$ and from 0.0 to 6.6 wt.% eq. NaCl, respectively. These suggest that ore forming fluids were progressively cooled and diluted from mixing with meteoric water. Sulfur(${\delta}^{34}S$: 0.4~8.4‰) isotope composition indicates that ore sulfur was derived from mainly magmatic source although there is a partial derivation from the host rocks. The calculated oxygen(${\delta}^{18}O$: 4.9~12.1‰) and hydrogen(${\delta}D$: -92~-74‰) isotope compositions suggest that magmatic and meteoric ore fluids were equally important for the formation of the Ogcheon deposit and then overlapped to some degree with another type of meteoric water during mineralization.

• Economic and Environmental Geology
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• v.41 no.5
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• pp.587-595
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• 2008

The geology of the Capim region in Brazil is composed of Ipixua Formation in Mesozoic-Tertiary(Miocene), sedimentary rocks in Miocene, Barreiras Formation(sedimentary rocks) in Pleistocene and sediments in Holocene. Kaolin deposit consists of Barreiras Formation(average depth in 120m) composed of sandstone, clay, fine sand of Miocene to Pliocene age. Kaolin of the high grade is white in color and its thickness averages 7m. The orebody formed by kaolinite was confirmed by XRD, is shape of hexagonal, SK is above 33 degree. It is class A also suit for producing a paper without filtration. According to the CPRM report, the reservation of kaolin ore is amounts of 566,819,164 tons.