• Economic and Environmental Geology
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• v.2 no.2
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• pp.73-75
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• 1969

Ogbang scheelite deposit imbedded in amphibolite of unknown age was believed, by the previous workers, to be of pegmatite vein. The vein material is composed mainly of plagioclase (albite and oligoclase) and minor amount (less than 5 to 10% each) of hornblende, biotite and quartz. Orthoclose and tourmaline are accompanied in few places and scheelite and minor amount of fluorite, are the ore minerals. On the basis of mineralogical constituents of the vein, vein structures, mode of occurrence of the vein and gradational contact between veins and amphibolite, the present writer conclude that the deposit was formed by segregation from the parent basic igneous rock of amphibolite. The main portions of the deposit were formed by intrusion of ore solution into already solidified amphibolite after being segregated in deeper horizone, whereas the minor portion by segregation of ore solution in situ.

• The Korean Journal of Quaternary Research
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• v.9 no.1
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• pp.43-60
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• 1995

The Kanweoldo Deposit in the Cheonsoo Bay western coast of Korean Peninsula is considered to be influenced by severe freezing condition under cold humid environment of the last glacial age. The evidence of severe freezing in the some upper part of the fine-grained Kanweoldo Deposit is characteristically irregular wavy la-mellar structure with the interval of 2∼8mm. In particular lamina show very compacted fabrics composed of rounded or spheroidal discrete aggregates covered by silt caps. Such laminar structure and associated micro-fabrics might owe to soil freezing such as ice segregation in lens form cryophoresis pressure from growing ice and disturbance by frost-creep. Furthermore pedogenesis of cold-humid type such as gleyzation or peseudo-gleyzation also might af-fect the kanweoldo Deposit in the priod of severe cold-humid cli-mate of the Wrm. The Kanweoldo sediment and organic remnant(16,708 B.P. with error limit of 250 years) affected by severe cryogenic activities sug-gest that the paleoclimate of Late Wrm in Korea might be so cold and humid as to engender the cryogenic structure in subaerial silty and sandy silt deposits.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.6
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• pp.854-859
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• 2016

Recently, GeSn is drawing great deal of interests as one of the candidates for group-IV-driven optical interconnect for integration with the Si complementary metal-oxide-semiconductor (CMOS) owing to its pseudo-direct band structure and high electron and hole mobilities. However, the large lattice mismatch between GeSn and Si as well as the Sn segregation have been considered to be issues in preparing GeSn on Si. In this work, we deposit the GeSn films on Si by DC magnetron sputtering at a low temperature of $250^{\circ}C$ and characterize the thin films. To reduce the stresses by GeSn onto Si, Ge buffer deposited under different processing conditions were inserted between Si and GeSn. As the result, polycrystalline GeSn domains with Sn atomic fraction of 6.51% on Si were successfully obtained and it has been demonstrated that the Ge buffer layer deposited at a higher sputtering power can relax the stress induced by the large lattice mismatch between Si substrate and GeSn thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.708-711
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• 1999

The Cu/Ni/Au lamellar structure is extensively used as an under bump metallization on silicon file, and on printed circuit board(PCB) pads. Ni is plated Cu by either electroless Ni plating, or electrolytic Ni plating. Unlike the electrolytic Ni plating, the electroless Ni plating does not deposit pure Ni, but a mixture of Ni and phosphorous, because hypophosphite Is used in the chemical reaction for reducing Ni ions. The fracture crack extended at the interface between solder balls of plastic ball grid (PBGA) package and conducting pads of PCB. The fracture is duets to segregation at the interface between Ni$_3$Sn$_4$intermetallic and Ni-P layer. The XPS diffraction results of Cu/Ni/Au results of CU/Ni/AU finishs showed that the Ni was amorphous with supersaturated P. The XPS and EDXA results of the fracture surface indicated that both of the fracture occurred on the transition lesion where Sn, P and Ni concentrations changed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.573-578
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• 2003

Low temperature selective epitaxial growth of Si and SiGe has been obtained using an industrial single wafer chemical vapor deposition module operating at reduced pressure. Epitaxial Si and heteroepitaxial SiGe deposition with Ge content about 20 % has been studied as extrinsic base for self-aligned heterojunction bipolar transistors(HBTs), which helps to reduce the parasitic resistance to obtain higher maximum oscillation frequencies(f$\_$max/). The dependence of Si and SiGe deposition rates on exposed windows and their evolution with the addition of HCl to the gas mixture are investigated. SiH$_2$Cl$_2$ was used as the source of Si SEG(Selective Epitaxial Growth) and GeH$_4$ was added to grow SiGe SEG. The addition of HCl into the gas mixture allows increasing an incubation time even low growth temperature of 675∼725$^{\circ}C$. In addition, the selectivity is enhanced for the SiGe alloy and it was proposed that the incubation time for the polycrystalline deposit on the oxide is increased probably due to GeO formation. On the other hand, when only SiGe SEG(Selective Epitaxial Growth) layer is used for extrinsic base, it shows a higher sheet resistance with Ti-silicide because of Ge segregation to the interface, but in case of Si or Si/SiGe SEG layer, the sheet resistance is decreased up to 70 %.

• Journal of the Korean Geosynthetics Society
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• v.13 no.2
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• pp.1-10
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• 2014

In this study, two different types of dredged fill injection methods are introduced and filling experiments were conducted to analyze the impact of each technique to the distribution and deposition of dredged soil fill and how it influence the final tube shape. Two transparent plastic tubes were fabricated to observe the deposition behavior of the deposited fill material. Both tubes measured 4.0 meters in length (L) and has vinyl tube diameters (D) of 0.5m and 0.7m. T-type and I-type inlet system are also introduced in this paper. The influence of this inlet systems to the distribution and deposition behavior of dredged soil fill inside the vinyl tubes were observed during the experiment. After the sedimentation of the slurry mixture, the water on top of the soil sediments are removed and the slurry mixture was re-injected into the vinyl tube, this process was carried out repeatedly. The shape changes of the vinyl tube, e.g. the changes in both tube height and width, are constantly monitored after each slurry injection and water draining phases. Crater formation was observed in the case of I-Type inlet system and a non-uniform sediment distribution occurred. For the diffusion deposit of soil particles to long distance are minimal shape technique using the T-Type inlet system. Therefore the undrain filling height ratio ($H/D_0$) was found to be around 0.54 to 0.64 and the horizontal strain ratio ($W/D_0$) ranges from 1.45 to 1.54. The filling soil height is proportional to dredged-material filling phases, but, horizontal strain ratio is constant or inversely reduced so that the center of tube body is raised in the upward direction.