• 유통과학연구
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• 제22권8호
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• pp.17-27
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• 2024

Economic growth is influenced by various factors, including support from the banking world in channeling funds ownedthrough bank credit which will be a stimulus from economic activities as a source of economic growth. Purpose: Thisstudy aims to analyze the determinants of bank lending in supporting regional economic growth in South Sulawesi Province. Research Design, Data, and Methodology: This study uses secondary data taken from banking data and analyzed using path analysis Data analysis is carried out using the help of SPSS statistical analysis tools. Results: Non-Performance Loan, Three Partied Fund, Inflation, Exchange Rate directly affect economic growth. For the analysis of the indirect effect of Non-performance loans and Three Partied Funds have an indirect effect on economic growth through lending while the Loan to deposit Ratio, Inflation and exchange rate do not indirectly affect economic growththrough lending. Credit disbursement has a positive and significant effect on economic growth Conclusion: Economicgrowth of a region is influenced by many factors and these factors are influences from the banking world, the results ofthis study show that economic growth is strongly influenced by bank support through lending to support the economy by considering other factors such as interest rates and currency exchange rates

• 한국재료학회지
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• 제30권4호
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• pp.169-175
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• 2020

Silicon nitride thin films are deposited by RF (13.57 MHz) magnetron sputtering process using a Si (99.999 %) target and with different ratios of Ar/N₂ sputtering gas mixture. Corning G type glass is used as substrate. The vacuum atmosphere, RF source power, deposit time and temperature of substrate of the sputtering process are maintained consistently at 2 ~ 3 × 10^-3 torr, 30 sccm, 100 watt, 20 min. and room temperature, respectively. Cross sectional views and surface morphology of the deposited thin films are observed by field emission scanning electron microscope, atomic force microscope and X-ray photoelectron spectroscopy. The hardness values are determined by nano-indentation measurement. The thickness of the deposited films is approximately within the range of 88 nm ~ 200 nm. As the amount of N₂ gas in the Ar:N₂ gas mixture increases, the thickness of the films decreases. AFM observation reveals that film deposited at high Ar:N₂ gas ratio and large amount of N₂ gas has a very irregular surface morphology, even though it has a low RMS value. The hardness value of the deposited films made with ratio of Ar:N₂=9:1 display the highest value. The XPS spectrum indicates that the deposited film is assigned to non-stoichiometric silicon nitride and the transmittance of the glass with deposited SiO₂-Si_xN_y thin film is satisfactory at 97 %.

• 한국분무공학회지
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• 제12권1호
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• pp.38-44
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• 2007

Since the Liquid Phase LPG injection (LPLI) system has Advantages in power generation and emission characteristics compared to the mixer-type fuel-supply system, a variety of studies regarding LPLi system has been conducted and its applications are made in automobile industry. However, the heat extraction due to the evaporation of liquid fuel, causes not only a post-accumulation of fuel but also an icing phenomenon which is a frost of moisture in the air around the nozzle tip. Since there exists a difficulty in the accurate control of air fuel ratio in both fuel supply systems, it can result in poor engine performance and a large amount of harmful emissions. This research examines the characteristics of icing phenomenon and develops anti-icing bushing to prevent an icing on the surface of the injection tip. It was found that n-butane, which has a relatively high boiling point ($-0.5^{\circ}C$), was a main species of post-accumulation. Also the results show that the post-accumulation problem was allevaited the utilization of a large inner to outer bore ratio and smooth surface roughness. In addition, an icing phenomenon and its formation process were found to be mainly affected by the humidity and the temperature of inlet air in an inlet duct. Also, it was observed that an icing phenomenon is lessened using aluminum bushing whose end coincides with the end of fuel injection tip in length.

• 한국환경복원기술학회지
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• 제17권6호
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• pp.1-15
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• 2014

A dredging on erosion control dam has been enforced without evaluation the factors that affect the dredging. In addition, there is the negative effect much more than positive effect by dredging on erosion control dam. Therefore, this study was carried out to develop evaluation indicators and to suggest fieldbook in order to determine whether sand deposits at erosion control dam should be dredged up or not. The most important six evaluation indicators that can decide to dredge up at erosion control dam were obtained from three round delphi technique and were selected in the following order: the current sand deposit ratio(0.339), existence of cultivated land and house downstream(0.276), the slope of streambed(0.162), the amount of movable soil and gravel(0.118), the history of any disasters(0.063), the basin area(0.043). The weighted score for each evaluation indicator were acquired from AHP analysis with respect to the degree of importance and then the modified weighted score for actual measurements were classified as three categories: large(2.53), medium(1.60) and small(1.01). Based on delphi technique, erosion control dam dredging evaluation fieldbook introduced the four evaluation indicators out of the total six evaluation indicators and two low effected evaluation indicators were excluded. This results showed that the values for reliability analysis and consistency ratio were acceptable.

• 한국세라믹학회지
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• 제48권6호
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• pp.621-624
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• 2011

In order to deposit a homogeneous and uniform ${\beta}$-SiC films by chemical vapor deposition, we constructed the phase-diagram of ${\beta}$-SiC over graphite and silicon via computational thermodynamic calculation considering pressure(P), temperature(T) and gas composition(C) as variables in $C_3H_8-SiCl_4-H_2$ system. During the calculation, the ratio of Cl/Si and C/Si is maintained to be 4 and 1, respectively, and H/Si ratio is varied from 2.67 to 15,000. The P-T-C diagram showed very steep phase boundary between SiC+C and SiC region perpendicular to H/Si axis and also showed SiC+Si region with very large H/Si value of ~6700. The diagram can be applied not only to the prediction of the deposited phase composition but to compositional variation due to the temperature distribution in the reactor. The P-T-C diagram could provide the better understanding of chemical vapor deposition of silicon carbide.

• 한국진공학회지
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• 제6권1호
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• pp.85-90
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• 1997

32cm직경의 $AlCu_x$(x=0.5%)음극 타겟과 회전 자석을 이용한 상용 마그네트론 스퍼 터링 장치에서 부가적인 플라즈마 여기 방법으로 스퍼터링된 입자들을 이온화시킨후, 수십 볼트의 직류 기판 바이어스로 이온의 방향성과 에너지를 조절하여 작은 트렌치나 via를 채 울 수 있는 공정을 개발하였다. 여기에서, 반경방향의 이온 플럭스비의 균일도 문제를 개선 하기 위하여, 입자들의 가시광선 영역의 방출선을 이용한 플라즈마 진단과, 패터닝된 웨이 퍼에 대한 직접 채우기로 플라즈마 내의 입자 분포와의 상관 관계를 찾고, RF 코일 설계의 개선을 도모하였다. 가시광 방출 분광에서 $Ar^{\circ},\;Ar^+;Al^+,\;Al^{\circ}$ 입자들의 방출선 세기는 1$\mu\textrm{m}$이 하의 크기를 갖는 트렌치와 via의 바닥과 top 두께비와 밀접한 관련이 있었다. RF코일의 직 경을 29cm에서 32cm로 증가 시키고, RF 입력부에 의한 비대칭을 개선하여 이온 플럭스비 의 척도가 되는 via 채우기의 바닥과 top의 두께비에서 7.5%에서 1.5%로의 균일도 향상을 얻었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.211-211
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• 2012

The electrical loss of the photo-generated carriers is dominated by the recombination at the metal- semiconductor interface. In order to enhance the performance of the solar cells, many studies have been performed on the surface treatment with passivation layer like SiN, SiO2, Al2O3, and a-Si:H. In this work, Al2O3 thin films were investigated to reduce recombination at surface. The Al2O3 thin films have two advantages, such as good passivation properties and back surface field (BSF) effect at rear surface. It is usually deposited by atomic layer deposition (ALD) technique. However, ALD process is a very expensive process and it has rather low deposition rate. In this study, the ICP-assisted reactive magnetron sputtering method was used to deposit Al2O3 thin films. For optimization of the properties of the Al2O3 thin film, various fabrication conditions were controlled, such as ICP RF power, substrate bias voltage and deposition temperature, and argon to oxygen ratio. Chemical states and atomic concentration ratio were analyzed by x-ray photoelectron spectroscopy (XPS). In order to investigate the electrical properties, Al/(Al2O3 or SiO2,/Al2O3)/Si (MIS) devices were fabricated and characterized using the C-V measurement technique (HP 4284A). The detailed characteristics of the Al2O3 passivation thin films manufactured by ICP-assisted reactive magnetron sputtering technique will be shown and discussed.

• 폴리머
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• 제25권2호
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• pp.302-310
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• 2001

무전해도금법을 이용하여 구리/PET 필름 복합재료를 제조하였으며 에칭방법과 촉매액의 조성 및 acceleration 방법을 달리하여 PET 필름과 무전해도금된 구리 피막간의 접착력을 향상시키고자 하였다. HCl 용액으로 에칭된 PET 필름은 NaOH에 의한 것보다 더욱 세밀하게 에칭되어져 구리와 PET 필름간의 접착력은 향상되었으나 전자파 차폐효과는 유사한 경향을 보였다. 촉매액의 조성변화에 따른 영향을 살펴본 결과 PdCl$_2$:SnCl$_2$의 몰비가 1:4에서 1:16으로 증가할수록 PET 필름 위에 적층된 Pd/Sn 콜로이드 입자들의 크기가 감소하며 고르게 분포되는 경향을 보였다. 따라서 이들의 몰비가 증가할수록 구리도금이 균일하고 조밀하게 이루어져 접착력 및 차폐효과가 증가하였다. 또한 NaOH보다 HCl로 acceleration한 경우 촉매 입자의 크기가 작고 더 균일하게 분포되어 우수한 접착력과 도금물성을 나타내었다.

• 한국표면공학회지
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• 제47권2호
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• pp.68-74
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• 2014

The seed step-coverage enhancement process (SSEP) using Pd/Cu/PVP colloids was investigated for the filling of through silicon via (TSV) without void. TEM analysis showed that the Pd/Cu nano-particles were well dispersed in aqueous solution with the average diameter of 6.18 nm. This Pd/Cu nano-particles were uniformly deposited on the substrate of Si/$SiO_2$/Ti wafer using electrophoresis with the high frequency Alternating Current (AC). After electroless Cu deposition on the substrate treated with Pd/Cu/PVP colloids, the adhesive property between deposited Cu layer and substrate was evaluated. The Cu deposit obtained by SSEP with Pd/Cu/PVP colloids showed superior adhesion property to that on Pd ion catalyst-treated substrate. Finally, by implementing the SSEP using Pd/Cu/PVP colloids, we achieved 700% improvement of step coverage of Cu seed layer compared to PVD process, resulting in void-free filling in high aspect ratio TSV.

• 한국진공학회지
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• 제19권2호
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• pp.91-95
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• 2010

상온에서 고품질의 $TiO_2$ 박막을 제조하기 위하여 titanium isopropoxide [Ti(OCH$(CH_3)_2)_4$, TIP]와 $H_2O$을 이용한 자외선 활성화 원자층 증착(UV-enhanced atomic layer deposition: UV-ALD) 기술을 개발하였다. UV-ALD 기술은 상온에서 자체제어 표면 반응(self-limitting surface reaction)을 통해 균일하고 고품위 등방 특성을 갖는 순수한 $TiO_2$ 박막 증착이 가능하였다. ALD 반응 시 조사되는 자외선은 Si 기질 위에 우수한 접착력을 가지는 고품질의 $TiO_2$ 박막을 얻는데 효과적이었다. UV-ALD 기술은 높은 단차비(aspect ratio)를 가지는 trench 기질 위에 균일한 $TiO_2$ 박막을 증착하는 데에 적용되었다.