• KSCE Journal of Civil and Environmental Engineering Research
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• v.36 no.4
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• pp.617-625
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• 2016

The objective of this study was to evaluate the groundwater drawdown and streamflow depletion due to each groundwater pumping from 110 wells located near stream using the Hunt's analytical solution (1999). The calculated results revealed that the streamflow depletion rate divided by the pumping rate for each well location mostly exceeded about 80% of pumping rate on average for 5 years. The results also showed that the stream boundary condition has made the influence distance shorter and the drawdown distribution skewed except for the streambed hydraulic conductivity and the stream bed factor (SBF) lower than $1.0{\times}10^{-9}m/s$ and 1.0, respectively. It was found that the groundwater pumping has significant impacts on the stream depletion showing above 80 % of stream depletion rate when the streambed hydraulic conductivity is higher than $1.0{\times}10^{-7}m/s$ and the stream depletion factor(SDF) is lower than 100. However, for other conditions, the SDF is not sufficient to be used as a criterion for determining whether the pumping has great impacts on stream depletion or not. Furthermore, the variation of the streambed hydraulic conductance has little change in stream depletion rate for the condition that the stream width is greater than 400 m.

• Journal of the Semiconductor & Display Technology
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• v.14 no.3
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• pp.27-31
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• 2015

It was the electrical properties of ZnS treated by the annealing in a vaccum and an atmosphere conditions to reseached the leakage current effect of semiconductor devices. Most samples were shown the non-linear with unipolar properties, but the ZnS annealed at $100^{\circ}C$ in a vaccum was only observed no leakage current in a range of -20 V< voltage < 15 V. The crystallinity of ZnS with no leakage current was improved and optical property was also improved. Because the ambipolar characteristics and low leakage currents originated from the extension effect of a depletion width by electron-hole combination in the depletion layer.

• Journal of Electrical Engineering and Technology
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• v.2 no.2
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• pp.267-273
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• 2007

A depletion-mode MOSFET has been analyzed to evaluate its electrical behavior using a novel 3-D numerical simulation package. The characterizing analysis of the BC MOSFET was performed through short-channel narrow-channel and small-geometry effects that are investigated, in detail, in terms of the threshold voltage. The DIBL effect becomes significant for a short-channel device with a channel length of $<\;3({\mu}m)$. For narrow-channel devices the variation of the threshold voltage was sharp for $<4({\mu}m)$ due to the strong narrow-channel effect. In the case of small-geometry devices, the shift of the threshold voltage was less sensitive due to the combination of the DIBL and substrate bias effects, as compared with that observed from the short-channel and narrow-channel devices. The characterizing analysis of the narrow-channel and small-geometry devices, especially with channel width of $<\;4({\mu}m)$ and channel area of $<\;4{\times}4({\mu}m^2)$ respectively, can be accurately performed only from a 3-D numerical simulation due to their sharp variations in threshold voltages.

• Journal of Sensor Science and Technology
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• v.23 no.3
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• pp.185-191
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• 2014

The width of depletion region in a varactor diode can be modulated by varying a reverse bias voltage. Thus, the preferred characteristics of depletion capacitance can obtained by the change in the width of depletion region so that it can select only the desirable frequencies. In this paper, the TV tuner varactor diode fabricated by hyper-abrupt profile control technique is presented. This diode can be operated within 3.3 V of driving voltage with capability of UHF band tuning. To form the hyperabrupt profile, firstly, p+ high concentration shallow junction with $0.2{\mu}m$ of junction depth and $1E+20ions/cm^3$ of surface concentration was formed using $BF_2$ implantation source. Simulation results optimized important factors such as epitaxial thickness and dose quality, diffusion time of n+ layer. To form steep hyper-abrupt profile, Formed n+ profile implanted the $PH_3$ source at Si(100) n-type epitaxial layer that has resistivity of $1.4{\Omega}cm$ and thickness of $2.4{\mu}m$ using p+ high concentration Shallow junction. Aluminum containing to 1% of Si was used as a electrode metal. Area of electrode was $30,200{\mu}m^2$. The C-V and Q-V electric characteristics were investigated by using impedance Analyzer (HP4291B). By controlling of concentration profile by n+ dosage at p+ high concentration shallow junction, the device with maximum $L_F$ at -1.5 V and 21.5~3.47 pF at 0.3~3.3 V was fabricated. We got the appropriate device in driving voltage 3.3 V having hyper-abrupt junction that profile order (m factor) is about -3/2. The deviation of capacitance by hyper-abrupt junction with C0.3 V of initial capacitance is due to the deviation of thermal process, ion implantation and diffusion. The deviation of initial capacitance at 0.3 V can be reduced by control of thermal process tolerance using RTP on wafer.

• The Journal of the Korea institute of electronic communication sciences
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• v.7 no.4
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• pp.833-837
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• 2012

This paper proposes a DRAM data retention time enhancement method that minimizes silicon loss and undercut at STI sidewall by reducing the SC1 (Standard Cleaning) time. SC1 time optimization debilitates the parasitic electric field in STI's top corner, which reduces an inverse narrow width effect to result in reduction of channel doping density without increasing the subthreshold leakage of cell Tr. Moreover, it minimizes the electric field in depletion area from cell junction to P-well, increasing yield or data retention time.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.32 no.9
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• pp.683-694
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• 2008

The performance and durability of Polymer Electrolyte Fuel Cells (PEFCs) are strongly influenced by the uniformity of current density, temperature, species distributions inside a cell In order to obtain uniform distributions in them, the optimal design of flowfield must be a key factor. In this paper, the numerical study of land/channel flowfield optimizations is performed, using a multi-dimensional, multi-phase, non-isothermal PEFC model. Numerical simulations reveal more uniform current density and HFR(High Frequency Resistance) distributions and thus better PEFC performance with narrower land/channel width where the less severe oxygen depletion effect near the land region and more uniform contact resistance variation along the in-plane direction are achieved. The present study elucidates detailed effects of land/channel width and assist in identifying optimal flow-field design strategies for the operation of PEFCs.

• Economic and Environmental Geology
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• v.27 no.6
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• pp.549-556
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• 1994

Geochemical studies on gold-bearing quartz veins and wallrocks from the Okgye mine were carried out in order to investigate the primary dispersion patterns of gold and associated elements and to quantify the dispersion width of elements with distance from the gold-bearing quartz veins. Gold-bearing quartz veins occur in basaltic trachyandesite of unknown age. Enrichment of $k_2O$, MnO, Au, As, Rb, Sb, Pb, Zn, Cu, Ag and Cd, and depletion of $Na_2O$ and Sr are found in altered wallrocks. The ratio of $k_2O(k_2O+Na_2O)$, alteration index for trace elements, and Rb/Sr in altered wallrocks are increased, whereas Sr/CaO ratio is decreased with approach to the gold-bearing quartz veins. The widths of primary dispersion range from 17 cm to 155 cm. The relative dispersion width increases in order Au=Cu=Zn=Ag=Cd$k_2O$=Rb and Ba< $Na_2O$ $Na_2O$, As, Sb, Sr, Pb, Au, Cu, Zn, Ag and Cd, and a quadratic function for $k_2O$, MnO, Rb and Ba.

• Journal of Sensor Science and Technology
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• v.26 no.2
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• pp.79-84
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• 2017

The drain current of the SB MOSFET was analytically modeled by an equation composed of thermionic emission and tunneling with consideration of the image force lowering. The depletion region electron concentration was used to model the channel electron concentration for the tunneling current. The Schottky barrier width is dependent on the channel electron concentration. The drain current is changed by the gate oxide thickness and Schottky barrier height, but it is hardly changed by the doping concentration. For a GaN SB MOSFET with ITO source and drain electrodes, the calculated threshold voltage was 3.5 V which was similar to the measured value of 3.75 V and the calculated drain current was 1.2 times higher than the measured.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1448-1450
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• 1994

The breakdown voltages of punchthrough-mode diodes with cylindrical junction are analytically calculated, The proposed method, which is based on th Gauss's law, estimates the lateral expansion of the depletion region as well as the electric field and the charge distribution. The proposed method is given in terms of epitaxial layer width, the epitaxial layer doping concentration, and curvature radius of the junction edge. The calculation results agree well with the MEDICI simulation results for various device parameters.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.550-553
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• 2001

In this study, unity current gain frequency f$\_$T/ of GaAs MESFET is predicted with different temperatures up to 400 $^{\circ}C$. Temperature dependence parameters of the device including intrinsic carrier concentration n$\_$i/ effective mass, depletion width are considered to be temperature dependent. Small signal parameters such as gate-source, gate dran capacitances C$\_$gs/ C$\_$gd/ are correlated with transconductance g$\_$m/ to predict the unity current gain frequency. The extrinsic capacitance which plays an important roles in high frequency region has been taken into consideration in evaluating total capacitance by using elliptic integral through the substrate. From the results, f$\_$T/ decreases as the temperature increases due to the increase of small signal capacitances and the mobility degradation. Finally the extrinsic elements of capacitances have been proved to be critical in deciding f$\_$T/ which are originated from the design rule of the device.