• The Bulletin of The Korean Astronomical Society
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• v.44 no.1
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• pp.77.2-77.2
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• 2019

NGC 4522 is one of the best-known examples among the Virgo galaxies undergoing active ram pressure stripping. There have been a number of detailed observational and theoretical studies on this galaxy to constrain its stripping and star formation history. However, the impact of ram pressure on the multi-phased ISM, in particular molecular gas which plays an important role in star formation, is still not fully understood. NGC 4522, as a system where the extra-planar molecular gas is identified, is an ideal case to probe in depth how ram pressure affects molecular gas properties. Aiming to get more theoretical insights on the detailed stripping process of multi-phased ISM and its consequences, we have conducted simulations using the TIGRESS which could reproduce the realistic ISM under comparable conditions as NGC 4522. In this work, we compare the fraction of gas mass to stellar mass, star formation rates and gas depletion time scales of NGC 4522 with those measured from the simulations, not only inside the disk but also in the extra-planar space.

• Journal of Sensor Science and Technology
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• v.23 no.3
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• pp.185-191
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• 2014

The width of depletion region in a varactor diode can be modulated by varying a reverse bias voltage. Thus, the preferred characteristics of depletion capacitance can obtained by the change in the width of depletion region so that it can select only the desirable frequencies. In this paper, the TV tuner varactor diode fabricated by hyper-abrupt profile control technique is presented. This diode can be operated within 3.3 V of driving voltage with capability of UHF band tuning. To form the hyperabrupt profile, firstly, p+ high concentration shallow junction with $0.2{\mu}m$ of junction depth and $1E+20ions/cm^3$ of surface concentration was formed using $BF_2$ implantation source. Simulation results optimized important factors such as epitaxial thickness and dose quality, diffusion time of n+ layer. To form steep hyper-abrupt profile, Formed n+ profile implanted the $PH_3$ source at Si(100) n-type epitaxial layer that has resistivity of $1.4{\Omega}cm$ and thickness of $2.4{\mu}m$ using p+ high concentration Shallow junction. Aluminum containing to 1% of Si was used as a electrode metal. Area of electrode was $30,200{\mu}m^2$. The C-V and Q-V electric characteristics were investigated by using impedance Analyzer (HP4291B). By controlling of concentration profile by n+ dosage at p+ high concentration shallow junction, the device with maximum $L_F$ at -1.5 V and 21.5~3.47 pF at 0.3~3.3 V was fabricated. We got the appropriate device in driving voltage 3.3 V having hyper-abrupt junction that profile order (m factor) is about -3/2. The deviation of capacitance by hyper-abrupt junction with C0.3 V of initial capacitance is due to the deviation of thermal process, ion implantation and diffusion. The deviation of initial capacitance at 0.3 V can be reduced by control of thermal process tolerance using RTP on wafer.

• Journal of the Korea Society for Simulation
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• v.16 no.3
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• pp.49-56
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• 2007

There are many application areas of wireless sensor networks, such as combat field surveillance, terrorist tracking and highway traffic monitoring. These applications collect sensed data from sensor nodes to monitor events in the territory of interest. One of the important issues in these applications is the existence of the radio-jamming zone between source nodes and the base station. Depending on the routing protocol the transmission of the sensed data may not be delivered to the base station. To solve this problem we propose a genetic algorithm based routing method for reliable transmission while considering the balanced energy depletion of the sensor nodes. The genetic algorithm finds an efficient routing path by considering the radio-jamming zone, energy consumption needed fur data transmission and average remaining energy level. The fitness function employed in genetic algorithm is implemented by applying the fuzzy logic. In simulation, our proposed method is compared with LEACH and Hierarchical PEGASIS. The simulation results show that the proposed method is efficient in both the energy consumption and success ratio of delivery.

• Nuclear Engineering and Technology
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• v.13 no.1
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• pp.1-11
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• 1981

The KINS (KAERI-Improved Nodal Simulation) program, a three-dimensional nodal simulation code for pressurized water reactors, has been developed and benchmarked against the first cycle of the Kori-1 reactor. The KINS program is based on the computational model used in FLARE code and has been modified to represent the PWR characteristics more explicitly. The critical boron concentration and three-dimensional power distribution at the beginning of life hot zero power have been calculated and compared with the operating data. A three-dimensional depletion calculation at the intervals of 1000 MWD/MTU turnup steps has been performed. As the result of comparison, our calculation is shown to be in excellent agreement with the operating data. It is displayed that, incorporated with the computing time, the KINS program is an effective and powerful tool for PWR core management.

• Nuclear Engineering and Technology
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• v.54 no.6
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• pp.2107-2119
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• 2022

Accurate remaining useful life (RUL) prediction for critical components of nuclear power equipment is an important way to realize aging management of nuclear power equipment. The electric gate valve is one of the most safety-critical and widely distributed mechanical equipment in nuclear power installations. However, the electric gate valve's extended service in nuclear installations causes aging and degradation induced by crack propagation and leakages. Hence, it is necessary to develop a robust RUL prediction method to evaluate its operating state. Although the particle filter(PF) algorithm and its variants can deal with this nonlinear problem effectively, they suffer from severe particle degeneracy and depletion, which leads to its sub-optimal performance. In this study, we combined the whale algorithm with regularized particle filtering(RPF) to rationalize the particle distribution before resampling, so as to solve the problem of particle degradation, and for valve RUL prediction. The valve's crack propagation is studied using the RPF approach, which takes the Paris Law as a condition function. The crack growth is observed and updated using the root-mean-square (RMS) signal collected from the acoustic emission sensor. At the same time, the proposed method is compared with other optimization algorithms, such as particle swarm optimization algorithm, and verified by the realistic valve aging experimental data. The conclusion shows that the proposed method can effectively predict and analyze the typical valve degradation patterns.

• Journal of the Korea Society for Simulation
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• v.17 no.3
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• pp.27-34
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• 2008

Wireless sensor networks are comprised of sensor nodes with resource-constrained hardware. Nodes in the sensor network without adequate protection may be compromised by adversaries. Such compromised nodes are vulnerable to the attacks like false reports injection attacks and false data injection attacks on legitimate reports. In false report injection attacks, an adversary injects false report into the network with the goal of deceiving the sink or the depletion of the finite amount of energy in a battery powered network. In false data injection attacks on legitimate reports, the attacker may inject a false data for every legitimate report. To address such attacks, the probabilistic voting-based filtering scheme (PVFS) has been proposed by Li and Wu. However, each cluster head in PVFS needs additional transmission device. Therefore, this paper proposes a fuzzy logic-based false report detection method (FRD) to mitigate the threat of these attacks. FRD employs the statistical en-route filtering scheme as a basis and improves upon it. We demonstrate that FRD is efficient with respect to the security it provides, and allows a tradeoff between security and energy consumption, as shown in the simulation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.1
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• pp.1-10
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• 2003

Device characteristics of the Metal-Ferroclecric-Semiconductor FET(MFSFET) are simulated in this study. The field-dependent polarization model and the square-law FET model are employed in our simulation. C-V$_{G}$ curves generated from our MFSFET simulation exhibit the accumulation, the depletion and the inversion regions clearly. The capacitance, the subthreshold and the drain current characteristics as a function of gate bias exhibit the memory windows are 1 and 2 V, when the coercive voltages of ferroelectric are 0.5 and 1 V respectively. I$_{D}$-V$_{D}$ curves are composed of the triode and the saturation regions. The difference of saturation drain currents of the MFSFET device at the dual threshold voltages in I$_{D}$-V$_{D}$ curve is 1.5, 2.7, 4.0, and 5.7 ㎃, when the gate biases are 0, 0.1, 0.2 and 0.3V respectively. As the drain current is demonstrated after time delay, PLZT(10/30/70) thin film shows excellent reliability as well as the decrease of saturation current is about 18 % after 10 years. Our simulation model is expected to be very useful in the estimation of the behaviour of MFSFET devices.T devices.

• Journal of the Korean Solar Energy Society
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• v.26 no.2
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• pp.9-18
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• 2006

In this paper, the thermodynamic performance of OTEC cycle was examined. Computer simulation programs were developed for simple Rankine cycle, regenerative Rankine cycle, Kalina cycle, open cycle and hybrid cycle. For the simple Rankine cycle, the results show that newly developed fluids such as R410A and R32 that do not cause stratospheric ozone layer depletion perform as well as R22 and ammonia. Also, simple Rankine cycle OTEC power plant can practically generate electricity when the difference in warm and cold sea water inlet temperatures are greater than $14^{\circ}C$. The regenerative Rankine cycle showed a 1.5 to 2% increase in energy efficiency compared to the simple Rankine cycle while the Kalina cycle employing ammonia/water mixture showed a 2-to-3% increase in energy efficiency, and the overall cycle efficiencies of hybrid cycle and open cycle were 3.35% and 4.86%, respectively.

• Geomechanics and Engineering
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• v.10 no.4
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• pp.423-436
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• 2016

Currently, there is a great interest in the coupling between multiphase fluid flow and geomechanical effects in hydrocarbon reservoirs and surrounding rocks. The ideal solution for this coupled problem is to introduce the geomechanical effects through the stress analysis solution and implement an algorithm, which assures that the equations governing the flow and stress analyses are obeyed in each time step. This paper deals with the implementation of a program (FORTRAN90 interface code), which was developed to couple conventional reservoir (ECLIPSE) and geomechanical (ABAQUS) simulators, using a partial coupling algorithm. The explicit coupled hydro-mechanical behavior of Iranian field during depletion and $CO_2$ injection is studied using the soils consolidation procedure available in ABAQUS. Time dependent reservoir pressure fields obtained from three dimensional compositional reservoir models were transferred into finite element reservoir geomechanical models in ABAQUS as multi-phase flow in deforming reservoirs cannot be performed within ABAQUS. The FEM analysis of the reservoir showed no sign of plastic strain under production and $CO_2$ injection scenarios in any part of the reservoir and the stress paths do not show a critical behavior.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.10
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• pp.24-31
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• 2003

Short channel effects (SCE) of bulk MOSFET with super-steep retrograded channels (SSR), fully-depleted SOI, and double-gate MOSFET have been analyzed using a evanescent-mode analysis. Analytical equations of the characteristics scaling-length (λ) for three structures have been derived and the accuracy of the calculated λ was verified by comparing to the device simulation result. It is found that the minimum channel length should be larger than 5λ and the depletion thickness of the SSR should be around 30 nm in order to be applicable to 70 nm CMOS technology. High-$textsc{k}$ dielectric shows a limitation in scaling due to the drain-field penetration through the dielectric unless the equivalent SiO2 thickness is very thin.