• Proceedings of the Korean Nuclear Society Conference
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• 1996.05d
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• pp.133-138
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• 1996

For the application of hydrogenated amorphous silicon (a-Si:H) p-i-n structural diode as the alpha particle spectroscopy, the induced charge collection was simulated based on a relevant non-uniform charge generation model. The simulation was accomplished for two extreme cases of the incident direction of alpha particle, p-and n-side, respectively. As expected, for the complete charge collection, the hole collection should be severely considered due to its poor mobility and the full depletion bias required. For the comparison of signal corresponding to the detector configuration or structure, although n-i-p configuration shows a wider range of linearity to the energy, p-i-n configuration is more suitable in the viewpoint of linearity and signal value for the considering energy range.

• 한국태양에너지학회:학술대회논문집
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• 2011.11a
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• pp.196-201
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• 2011

The energy used in Korea is strongly dependent on that produced by foreign countries. Accordingly, saving energy is more important than ever, because of the rise of international oil prices and depletion of oil resources. The development of energy efficient buildings is required especially for public buildings in Korea. In this study, the energy use of public buildings is identify. Then, the analysis of energy usage through regional offices in Busan City offers energy performance for public buildings.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.12
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• pp.1872-1876
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• 2012

A calculation method of the breakdown voltage for the drain region with the cylindrical structure in LDMOS is proposed. The depletion region of the drain is divided into many smaller regions and the doping concentration of each split region is assumed to be uniformly distributed. The field and potential in each split region is calculated by the integration of the Poisson equation and the ionization integral method is used to compute the breakdown voltage. The breakdown voltage resulted from the proposed method shows the maximum relative error of 2.2% compared with the result of the 2-dimensional device simulation using BANDIS.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1471-1473
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• 2000

In this study capacitance and dielectric loss factor were measured with low-voltage signal and the simulation of equivalent circuits for the data were conducted. As the result it was showed that the equivalent circuit model considered the gram-boundary structure with semiconducting layer, dielectric layer and depletion layer was well approximated with the observed data. Various parameters were determined by a optimum curve-fitting method and could be used to analyze the varistor-voltages and the nonlinear coefficient of varistors. It also seems that the proposed equivalent circuit model will be adopted for other BL type varistors.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.15 no.1
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• pp.9-14
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• 1990

In this paper, I derived a two-dimensional analytical closed-form expression of the threshold voltage for small size MOSFET. The invalid assumptions of constant surface portential or uniform depletion depth were corrected. A comparison between the results of pre-models analyses and the present's proved that this paper's model is quite accurate. Therefore, this model will become a useful design tool for short channel MOSFET.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.5
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• pp.794-803
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• 1987

In this paper, the SPICE 2.G6 JFET subroutine and other related subroutines are modified for circuit simulation of GaAs MESFET IC's. The hyperbolic tangent model is used for the drain current-voltage characteristics of GaAs MESFET's and derived channel-conductance and drain-conductance model from the above current model are implemented into small-signal model of GaAs MESFET's. And, device capacitance model which consider after-pinch-off state are modified, and device charge model for SPICE 2G.6 are proposed. The result of modification is shown to be suitable for GaAs circuit simulator, showing good agreement with experimetal results. Forthermore the DC convergence of this paper is better than that of SPICE 2.G JFET subroutine. GaAs MESFET model in this paper is applied for both depletion mode GaAs MESFET and enhancement-mode GaAs MESFET without difficulty.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.8
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• pp.34-45
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• 1994

We studied threshold voltages and I-V characteristics. considering short channel effect of the fully depleted thin film n-channel SOI MOSFET. We presented a charge sharing model when the back surface of short channel shows accumulation depletion and inversion state respectively. A degree of charge sharing can be compared according to each of back-surface conditions. Mobility is not assumed as constant and besides bulk mobility both the mobility defined by acoustic phonon scattering and the mobility by surface roughness scattering are taken into consideration. I-V characteristics is then implemented by the mobility including vertical and parallel electric field. kThe validity of the model is proved with the 2-dimensional device simulation (MEDICI) and experimental results. The threshold voltage and charge sharing region controlled by source or drain reduced with increasing back gate voltage. The mobility is dependent upon scattering effect and electric field. so it has a strong influence on I-V characteristics.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.1
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• pp.61-65
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• 2010

Threshold voltage is one of the most important factors in a device modeling. In this paper, analytical method to calculate threshold voltage for recessed channel (RC) MOSFETs is studied. If we know the fundamental parameter of device, such as radius, oxide thickness and doping concentration, threshold voltage can be obtained easily by using this model. The model predicts the threshold voltage which is the result of 2D numerical device simulation.

• Journal of Communications and Networks
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• v.18 no.4
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• pp.551-558
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• 2016

In multifiber all-optical networks, optical amplifiers are used for amplifying multiple optical signals with different wavelengths in fibers. An optical amplifier operates when any of lightpaths passes through it. Therefore, it should simultaneously amplify as many lightpaths as possible for efficiently utilizing its power. This paper proposes a dynamic lightpath establishment scheme considering the use efficiency of the optical amplifiers and the depletion of the wavelength resources in multifiber all-optical networks. The proposed scheme provides a routing and wavelength assignment strategy that reduces both the power consumption of the optical amplifiers and the blocking probability of the lightpath establishment. Through simulation experiments, we demonstrate the effectiveness of the proposed scheme.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.4
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• pp.1059-1067
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• 1996

A 128/129 dual-modulus prescalar IC is designed for application to frequency synthesizers in high frequency communication systems. The FET logic used in this design is SCFL(Source Coupled FET Logic), employing depletion-mode 1.mu.m gate length GaAs MESFETs with the threshold voltage of -1.5V. This circuit consists of 8 flip-flops, 3 OR gates, 2 NOR gates, a modulus control buffer and I/O buffers, which are integrated with about 440 GaAs MESFETs on dimensions of 1.8mm. For $V_{DD}$ and $V_{SS}$ power supply voltages 5V and -3.3V Commonly used in TTL and ECL circuits are determined, respectively. The simulation results taking into account the threshold voltage variation of .+-.0.2V and the power supply variation of .+-.1V demonstrate that the designed prescalar can operate up to 2GHz. This prescalar is fabricated using the ETRI MMIC foundary process and the measured maximum operating frquency is 621MHz.