• Title/Summary/Keyword: Depletion simulation

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Low Power Consumption Scan Driver Using Depletion-Mode InGaZnO Thin-Film Transistors (공핍 모드 InGaZnO 박막 트랜지스터를 이용한 저소비전력 스캔 구동 회로)

  • Lee, Jin-Woo;Kwon, Oh-Kyong
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.49 no.2
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    • pp.15-22
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    • 2012
  • A low power consumption scan driver using depletion-mode n-type InGaZnO thin-film transistors is proposed. The proposed circuit uses 2 clock signals and generates the non-overlap output signals without the additional masking signals and circuits. The power consumption of the proposed circuit is decreased by reducing the number of the clock signals and short circuit current. The simulation results show that the proposed circuit operates successfully when the threshold voltage of TFT is varied from -3.0V to 1.0V. The proposed scan driver consumes 4.89mW when the positive and negative supply voltage is 15V and -5V, respectively, and the operating frequency is 46KHz on the XGA resolution panel.

Quantitative Analysis on Voltage Schemes for Reliable Operations of a Floating Gate Type Double Gate Nonvolatile Memory Cell

  • Cho, Seong-Jae;Park, Il-Han;Kim, Tae-Hun;Lee, Jung-Hoon;Lee, Jong-Duk;Shin, Hyung-Cheol;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.5 no.3
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    • pp.195-203
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    • 2005
  • Recently, a novel multi-bit nonvolatile memory based on double gate (DG) MOSFET is proposed to overcome the short channel effects and to increase the memory density. We need more complex voltage schemes for DG MOSFET devices. In view of peripheral circuits driving memory cells, one should consider various voltage sources used for several operations. It is one of the key issues to minimize the number of voltage sources. This criterion needs more caution in considering a DG nonvolatile memory cell that inevitably requires more number of events for voltage sources. Therefore figuring out the permissible range of operating bias should be preceded for reliable operation. We found that reliable operation largely depends on the depletion conditions of the silicon channel according to charge amount stored in the floating gates and the negative control gate voltages applied for read operation. We used Silvaco Atlas, a 2D numerical simulation tool as the device simulator.

Neutronics modelling of control rod compensation operation in small modular fast reactor using OpenMC

  • Guo, Hui;Peng, Xingjie;Wu, Yiwei;Jin, Xin;Feng, Kuaiyuan;Gu, Hanyang
    • Nuclear Engineering and Technology
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    • v.54 no.3
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    • pp.803-810
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    • 2022
  • The small modular liquid-metal fast reactor (SMFR) is an important component of advanced nuclear systems. SMFRs exhibit relatively low breeding capability and constraint space for control rod installation. Consequently, control rods are deeply inserted at beginning and are withdrawn gradually to compensate for large burnup reactivity loss in a long lifetime. This paper is committed to investigating the impact of control rod compensation operation on core neutronics characteristics. This paper presents a whole core fine depletion model of long lifetime SMFR using OpenMC and the influence of depletion chains is verified. Three control rod position schemes to simulate the compensation process are compared. The results show that the fine simulation of the control rod compensation process impacts significantly the fuel burnup distribution and absorber consumption. A control rod equivalent position scheme proposed in this work is an optimal option in the trade-off between computation time and accuracy. The control position is crucial for accurate power distribution and void feedback coefficients in SMFRs. The results in this paper also show that the pin level power distribution is important due to the heterogeneous distribution in SMFRs. The fuel burnup distribution at the end of core life impacts the worth of control rods.

Cross section generation for a conceptual horizontal, compact high temperature gas reactor

  • Junsu Kang;Volkan Seker;Andrew Ward;Daniel Jabaay;Brendan Kochunas;Thomas Downar
    • Nuclear Engineering and Technology
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    • v.56 no.3
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    • pp.933-940
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    • 2024
  • A macroscopic cross section generation model was developed for the conceptual horizontal, compact high temperature gas reactor (HC-HTGR). Because there are many sources of spectral effects in the design and analysis of the core, conventional LWR methods have limitations for accurate simulation of the HC-HTGR using a neutron diffusion core neutronics simulator. Several super-cell model configurations were investigated to consider the spectral effect of neighboring cells. A new history variable was introduced for the existing library format to more accurately account for the history effect from neighboring nodes and reactivity control drums. The macroscopic cross section library was validated through comparison with cross sections generated using full core Monte Carlo models and single cell cross section for both 3D core steady-state problems and 2D and 3D depletion problems. Core calculations were then performed with the AGREE HTR neutronics and thermal-fluid core simulator using super-cell cross sections. With the new history variable, the super-cell cross sections were in good agreement with the full core cross sections even for problems with significant spectrum change during fuel shuffling and depletion.

Modeling and Simulation for Transient Pulse Gamma-ray Effects on Semiconductor Devices (반도체 소자의 과도펄스감마선 영향 모델링 및 시뮬레이션)

  • Lee, Nam-Ho;Lee, Seung-Min
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.59 no.9
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    • pp.1611-1614
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    • 2010
  • The explosion of a nuclear weapon radiates a gamma-ray in the form of a transient pulse. If the gamma-ray introduces to semiconductor devices, much Electron-Hole Pairs(EHPs) are generated in depletion region of the devices[7]. as a consequence of that, high photocurrent is created and causes upset, latchup and burnout of semiconductor devices[8]. This phenomenon is known for Transient Radiation Effects on Electronics(TREE), also called dose-rate effects. In this paper 3D structure of inverter and NAND gate device was designed and transient pulse gamma-ray was modeled. So simulation for transient radiation effect on inverter and NAND gate was accomplished and mechanism for upset and latchup was analyzed.

Optimization of Capacitor Threshold VT Implantation for Planar P-MOS DRAM Cell (평면구조 P-MOS DRAM 셀의 커패시터 VT 이온주입의 최적화)

  • Chang Sung-Keun;Kim Youn-Jang
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.2
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    • pp.126-129
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    • 2006
  • We investigated an optimized condition of the capacitor threshold voltage implantation(capacitor $V_T$ Implant) in planar P-MOS DRAM Cell. Several samples with different condition of the capacitor $V_T$ Implant were prepared. It appeared that for the capacitor $V_T$ Implant of $BF_2\;2.0{\times}l0^{13}\;cm^{-2}$ 15 KeV, refresh time is three times larger than that of the sample, in which capacitor $V_T$ Implant is in $BF_2\;1.0{\times}l0^{13}\;cm^{-2}$ 15 KeV. Raphael simulation revealed that the lowed maximum electric field and lowed minimum depletion capacitance ($C_{MIN}$) under the capacitor resulted in well refresh characteristics.

An Analytic Model for Punchthrough Limited Breakdown Voltage of Cylindrical Junctions (Punchthrough 원통형 접합이 항복전압에 대한 해석적 모델)

  • 배동건;정상구
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.4
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    • pp.70-76
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    • 1999
  • Analytic model for punchthrough limited breakdown voltage of cylindrical junction is presented as a function of the epitaxial layer thickness and the critical depletion width of the cylindrical junction in nonpunchthrough cases. All the expressions for the distances, electric fields and potentials are normalized, allowing quick determination of the corresponding breakdown voltages. The calculated results are in good agreement with the simulations obtained from two dimensional device simulation program MEDICI.

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Study on the performance analysis of SCW geothermal system by simulation and monitoring (모니터링 및 시뮬레이션을 통한 SCW형 지열 시스템의 성능인자 분석에 관한 연구)

  • Lee, SangJun;Nam, Yujin
    • Journal of the Korean Society for Geothermal and Hydrothermal Energy
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    • v.9 no.2
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    • pp.8-15
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    • 2013
  • Recently, an interest in the use of renewable energy has been growing up due to the rise of raw material price, international oil price and depletion of fossil energy. Ground source heat pump system has a high efficiency by using the constant temperature of underground and various types of the systems have been installed and utilized in the building. there are few studies on the system performance factors in the SCW system. Furthermore, even though the performance of the system depends on the temperature of heat source, the research on their relationship is rare. In this research, in order to analyze the performance factor for the open-loop system the monitoring of the real building with the standing column well systems and the simulation with building model were conducted.

Study on the Smart Charging for Plug-in Hybrid Electric Vehicle (플러그인 하이브리드 전기자동차의 스마트 충전에 관한 연구)

  • Roh, Chul-Woo;Kim, Min-Soo
    • 한국신재생에너지학회:학술대회논문집
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    • 2008.10a
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    • pp.349-352
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    • 2008
  • The most concerning issue in these days is the energy crisis by increasing threat of global warming and depletion of natural resources. In the situations, the Plug-in Hybrid Electric Vehicle (PHEV) is drawing attention from many countries for the next generation's car which has higher fuel efficiency and lower environmental impact. This paper presents simulation results about the limit capacity of central power-grid which doesn't have enough surplus electric power for charging PHEVs. Therefore, this paper also presents a smart charging system that can charge the PHEVs with a function of distributing demands of charging. The smart charging system is an agent facility between the government and consumer, which can recommend the best time to charge the battery of PHEVs by the lowest energy cost. This function of choosing time-slots is the technical system for the government which wants to control the consumption rate of electric power for PHEVs. Finally, this paper presents the economic feasibility of PHEVs from the two kinds of price system, midnight electric price and home electric price.

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On Renewable Energy Technology Valuation Using System Dynamics and Compound Real Options (시스템다이내믹스와 복합 리얼옵션 기반 신·재생에너지 기술가치평가)

  • Jeon, Chanwoong;Shin, Juneseuk
    • Journal of Korean Institute of Industrial Engineers
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    • v.40 no.2
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    • pp.195-204
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    • 2014
  • The transition from fossil to renewable energy is inevitable due to fossil depletion. So, Renewable energy is very important for energy security and economic growth although it's R&D is long-term and high risky project. We propose new valuation method which combined system dynamics and compound real option method for long-term and high risk projects such as renewable energy. This method can show dynamic valuation results for the complex causal interaction and be easy for Monte-Carlo simulation to estimate volatility. And it can reflect the value of flexible decision for uncertainty. We applied the empirical analysis for Korea's photovoltaic industry by using this method. As results by empirical analysis, photovoltaic's R&D has high valuation using this method compared by traditional valuation methods such as DCF.