• Nuclear Engineering and Technology
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• v.51 no.1
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• pp.60-72
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• 2019

The air-cooled passive decay heat removal system (APDHR) was proposed to provide the ultimate heat sink for non-LOCA accidents. The APDHR is a modified one of Passive Auxiliary Feed-water system (PAFS) installed in APR+. The PAFS has a heat exchanger in the Passive Condensate Cooling Tank (PCCT) and can remove decay heat for 8 h. After that, the heat transfer rate through the PAFS drastically decreases because the heat transfer condition changes from water to air. The APDHR with a vertical heat exchanger in PCCT will be able to remove the decay heat by air if it has sufficient natural convection in PCCT. We conducted the thermal-hydraulic simulation by the MARS code to investigate the behavior of the APR + selected as a reference plant for the simulation. The simulation contains two phases based on water depletion: the early phase and the late phase. In the early phase, the volume of water in PCCT was determined to avoid the water depletion in three days after shutdown. In the late phase, when the number of the HXs is greater than 4089 per PCCT, the MARS simulation confirmed the long-term cooling by air is possible under extended Station Blackout (SBO).

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1337-1339
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• 1998

The trench termination scheme is introduced for high voltage devices. The curvature of the depletion region at field limiting ring is critical factor to determine the breakdown voltage. The smooth curvature of the depletion junction alleviate the electric field crowding effect around this region. In the trench field limiting ring, the radius of the depletion region is smaller than conventional field limiting ring, but the distance between every trench is spaced small enough to punchthrough before initiation of local breakdown. The trench field limiting ring on silicon can ne formed by RIE followed by oxidation on side wall surface of the trench, and polysilicon filling. The combined termination of this trench floating field ring and field plate have been designed and analyzed. The breakdown simulation by 2-dimensional TCAD shows that the cylindrical junction breakdown voltage for substrate doping might be 99 percent of the ideal breakdwon voltage for substrate doping concentration of $3\times10^{14}cm^{-3}$ with about $100{\mu}m$ of lateral termination width.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.12
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• pp.2166-2172
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• 2007

In this study a low-signal equivalent circuit based on the Double Schottky Barrier model is proposed for ZnO-based varistor. Since pin-lead inductance and stray capacitance are considered in pin-lead type ZnO varistor these inductance and capacitance could be removed from the experimental dielectric data of the varistor. According to the equivalent circuit simulation results the higher the varistor-voltage of varistor sample the capacitance of dielectric layer is larger, and the capacitances of semiconducting layer and depletion layer are smaller, while the parallel resistances of semiconducting layer and depletion layer are more larger values. Spectra of the dielectric loss factor $tan{\delta}$ show 2 peaks in low frequency and high frequency regions respectively. The low-frequency peak is due to the relaxation by deep donors and the high-frequency peak is due to the relaxation by shallow donors. Above results are well consistent with the theoretical mechanism of ZnO varistor.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.10 s.352
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• pp.10-21
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• 2006

We have studied the characteristics of oxide VCSELS when their off-current and on-current are kept small in order to find out the possibility of low current operation. A large signal equivalent circuit model has been used. By comparing measured data and simulation results, the parameters of the large signal models are obtained including the capacitances. Using the large signal model, we have investigated the effects of capacitance and on/off currents upon the turn-on/turn-off characteristics and eye diagram. According to the experiment and simulation, the depletion capacitance, which has been neglected, is found to have significant influence on the him-on delay and eye-diagram. Therefore, for high speed and low current operation, the reduction of the depletion capacitance is essential.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.6
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• pp.379-383
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• 2003

The subthreshold characteristics of Double-Gate MOSFETs are analyzed for various Tsi. In the lightly-doped asymmetric device, it is found that the subthreshold current dramatically increases as the Tsi increases and this phenomenon is due to the linear distribution of potential in the channel region with low depletion-charge. Further, we derived an analytical equation which can explain this phenomenon and verified the accuracy of analytical equation by comparing with the result of device simulation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.4
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• pp.49-56
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• 2008

This paper introduces a compact analytical current conduction model of long-channel depletion-mode n-type nanowire field-effect transistors (NWFETs). The NWFET used in this work was fabricated with the bottom-up process and it has a bottom-gate structure. The model includes all current conduction mechanisms of the NWFET operating at various bias conditions. The results simulated from the newly developed NWFET model reproduce a reported experimental results within a 10% error.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.395-396
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• 2008

There is difficulty in predicting the program efficiency of NOR type nonvolatile memory device adopting channel hot electron injection (CHEI) as program operation mechanism accurately since MOSFET on SOI has floating body. In this study, the dependence of program efficiency for SOI nonvolatile memory device of 200 nm channel length on SOI depletion conditions, partial depletion and full depletion, was quantitatively investigated with the aid of numerical device simulation [1].

• Journal of Electrical Engineering and Technology
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• v.2 no.2
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• pp.267-273
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• 2007

A depletion-mode MOSFET has been analyzed to evaluate its electrical behavior using a novel 3-D numerical simulation package. The characterizing analysis of the BC MOSFET was performed through short-channel narrow-channel and small-geometry effects that are investigated, in detail, in terms of the threshold voltage. The DIBL effect becomes significant for a short-channel device with a channel length of $<\;3({\mu}m)$. For narrow-channel devices the variation of the threshold voltage was sharp for $<4({\mu}m)$ due to the strong narrow-channel effect. In the case of small-geometry devices, the shift of the threshold voltage was less sensitive due to the combination of the DIBL and substrate bias effects, as compared with that observed from the short-channel and narrow-channel devices. The characterizing analysis of the narrow-channel and small-geometry devices, especially with channel width of $<\;4({\mu}m)$ and channel area of $<\;4{\times}4({\mu}m^2)$ respectively, can be accurately performed only from a 3-D numerical simulation due to their sharp variations in threshold voltages.

• Nuclear Engineering and Technology
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• v.52 no.11
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• pp.2667-2677
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• 2020

A domain decomposition (DD) scheme for GPU-based Monte Carlo (MC) calculation which is essential for whole-core depletion is introduced within the framework of the modified history-based tracking algorithm. Since GPU-offloaded MC calculations suffer from limited memory capacity, employing DDMC is inevitable for the simulation of depleted cores which require large storage to save hundreds of newly generated isotopes. First, an automated domain decomposition algorithm named wheel clustering is devised such that each subdomain contains nearly the same number of fuel assemblies. Second, an innerouter iteration algorithm allowing overlapped computation and communication is introduced which enables boundary neutron transactions during the tracking of interior neutrons. Third, a bank update scheme which is to include the boundary sources in a way to be adequate to the peculiar data structures of the GPU-based neutron tracking algorithm is presented. The verification and demonstration of the DDMC method are done for 3D full-core problems: APR1400 fresh core and a mock-up depleted core. It is confirmed that the DDMC method performs comparably with the standard MC method, and that the domain decomposition scheme is essential to carry out full 3D MC depletion calculations with limited GPU memory capacities.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.41 no.4
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• pp.257-268
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• 2017

This paper proposes an efficient two-dimensional simulation model for solid oxide fuel cells (SOFCs) based on the electrochemical effectiveness model. The effectiveness model is known to accurately predict the current generation performance of SOFC electrodes, by considering the complex reaction/transport processes that occur within thin active functional layers near the electrolyte. After validation tests, the two-dimensional simulation model was used to calculate the distribution of current density and oxygen concentration transverse to the flow channel in anode-supported SOFCs, with which the oxygen depletion characteristics were investigated in detail. In addition, simulations were also conducted to determine the minimum number of grids required in the transverse direction to efficiently obtain accurate results.