• Journal of Electrical Engineering and Technology
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• 제1권2호
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• pp.233-236
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• 2006

A 3-D numerical simulation of a buried-channel CCD (Charge Coupled Device) with a deep depletion has been performed to investigate its electrical and physical behaviors. Results are presented for a deep depletion CCD (EEV CCD12; JET-X CCD) fabricated on a high-resistivity $(1.5k\Omega-cm)\;65{\mu}m$ thick epi-layer, on a $550{\mu}m$ thick p+ substrate, which is optimized for X-ray detection. Accurate predictions of the Potential minimum and barrier height of a CCD Pixel as a function of mobile electrons are found to give good charge transfer. The depletion depth approximation as a function of gate and substrate bias voltage provided average errors of less than 6%, compared with the results estimated from X-ray detection efficiency measurements. The result obtained from the transient simulation of signal charge movement is also presented based on 3-Dimensional analysis.

• Journal of Advanced Marine Engineering and Technology
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• 제30권8호
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• pp.907-918
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• 2006

In this study capacitance and dielectric loss factor were measured with low-voltage signal and the simulation of equivalent circuits for the data was conducted. As the result it was shown that the equivalent circuit model considered the grain-boundary structure with semiconducting layer, dielectric layer and depletion layer was well approximated with the observed data. Various parameters were determined by a optimum curve-fitting method and could be used to analyze the characteristics of varistor. It also seems that the proposed equivalent circuit model will be adopted for other BL type varistors.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.163.2-163.2
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• 2014

We report catalytic decomposition of few-layer graphene on an $Au/SiO_x/Si$ surface wherein oxygen is supplied by dissociation of the native $SiO_x$ layer at a relatively low temperature of $400^{\circ}C$. The detailed chemical evolution of the graphene covered $SiO_x/Si$ surface with and without gold during the catalytic process is investigated using a spatially resolved photoelectron emission method. The oxygen atoms from the native $SiO_x$ layer activate the gold-mediated catalytic decomposition of the entire graphene layer, resulting in the formation of direct contact between the Au and the Si substrate. The notably low contact resistivity found in this system suggests that the catalytic depletion of a $SiO_x$ layer could realize a new way to micromanufacture high-quality electrical contact.

• 폴리머
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• 제39권3호
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• pp.370-381
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• 2015

고분자와 용매의 굴절률이 서로 일치되어 자체 산란광의 세기가 극소화된 시스템인 폴리(비닐 아세테이트) (PVAc)/디메틸설폭사이드(DMSO) 계에 폴리스티렌 라텍스 탐침입자(표시 직경 200 nm)를 소량 첨가한 뒤 동적 광산란법으로 용액의 PVAc 농도에 대한 입자의 확산 거동을 정밀하게 조사하였다. 구형 입자의 환산확산계수의 농도의존성은 환산농도 $C[{\eta}]$의 신장지수함수로 분석할 수 있었고, 묽은 농도에서는 배제층의 두께가 일정하게 유지되었으나 초기 준희박 농도인 $1{\leq}C[{\eta}]{\leq}2.5$ 범위에서는 배제층의 사슬농도 의존지수가 -0.8로써 이론적 계산치 -0.85와 일치하였다. 그러나 보다 높은 농도에서는 배제층의 두께가 이론적 예측보다 급속히 감소하는 현상 또한 관찰되었으며, 그 원인은 인접한 탐침 입자들 사이에 존재하는 Oosawa 인력 때문인 것으로 설명할 수 있었다.

• 폴리머
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• 제36권5호
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• pp.628-636
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• 2012

폴리(비닐 알코올)(PVA)/디메틸설폭사이드 용액에 폴리스티렌 라텍스 구형입자(직경 범위: 100~300 nm)를 소량 첨가한 뒤, 구형 입자 표면에 형성된 사슬 배제층 두께가 사슬의 농도에 따라 어떻게 의존하는지를 동적 광산란법으로 조사하였다. 묽은 용액 농도에서는 배제층의 두께가 PVA 사슬의 회전반경의 $63{\pm}3%$ 수준에서 일정하게 유지되었었으나 준희박 용액 농도의 초기 영역인 $1.5{\leq}C[{\eta}]{\leq}3$ 범위에서는 배제층 두께 ${\delta}$의 고분자 농도 의존성은 이론치 -0.75와 비슷한 ${\delta}{\sim}C^{-0.8}$로 얻어졌다. 보다 높은 농도 $C[{\eta}]$ >3 이상에서는 배제층의 두께가 급격히 감소하는 것으로 나타났는데 그 이유는 탐침입자간 Oosawa 인력에 의하여 유발된 응집효과가 그 원인인 것으로 설명할 수 있었다.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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• pp.65-69
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• 2002

An Al film deposited on the Kovar alloy substrate was anodically-bonded to the borosilicate glass, and the bond interfaces was closely investigated by transmission electron microscopy. Al oxide was found to form a layer ~l0 nm thick at the bond interface, and fibrous structure of the same oxide was found to grow epitaxially in the glass from the oxide layer. The fibrous structure grew with the bonding time. The mechanism of the formation of this fibrous structure is proposed on the basis of the migration of Al ions under the electric field. Penetration of Al into glass beyond the interfacial Al oxide was not detected. The comparison of the amount of excess oxygen ions generated in the alkali depletion layer with that incorporated in the Al oxide suggests that the growth of the alkali-ion depletion layer is controlled by the consumption of excess oxygen to form the interfacial Al oxide.

• E2M - 전기 전자와 첨단 소재
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• 제9권10호
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• pp.1019-1026
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• 1996

In this study, we may be presented the carrier oscillation properties for the low-voltage varistor fabricated by a new method of three composition seed grain, in order to analyze the behavior of carriers at the its equivalent circuit model. The oscillation phenomena of carriers appeared from current-voltage characteristics under knee voltage is shown by the transient flow of nontrapped carriers group in the trap level of intergranular layer, surface state and/or depletion layer. In particularly, current oscillation phenomena is hardly shown in the high electric field. It is that the injected carriers from both electrodes are directly from the conduction band of forward biased ZnO grain through the intergranular layer into the reverse biased ZnO grain, because the trap level in the electric field above the knee voltage is mostly filled.

• Journal of Advanced Marine Engineering and Technology
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• 제28권5호
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• pp.728-734
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• 2004

Environmentally friendly refrigerants with zero ozone layer depletion potential are required to be used in refrigerators and air conditioners due to the difficulties related to ozone layer depletion and global warming. A rigorous study for the system performance with new refrigerants having zero ozone layer depletion potential is inevitable before adopting that as a new fluid. The HFC(Hydrofluorocarbon) potential has been recommended as alternatives. In this paper. system performance in the heat pump facilities were studied using R-290, R-600a. R-1270 as an environment friendly refrigerant. R-22 as a HCFC's refrigerant. The experimental apparatus has been set-up as a conventional vapor compression type heat Pump system. The test section is a horizontal double pipe heat exchanger. A tube diameter of 12.70mm with 1.315mm wall thickness is used for this investigation. The test results showed that the COP of hydrocarbon refrigerants were superior to that of R-22 and the maximum increasing rate of COP was found in R-1270. The refrigeration capacity of hydrocarbon refrigerants were higher than that of R-22. The compressor work was obtained with the maximum value in R-1270 and the minimum one in R-22.

• 한국산학기술학회논문지
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• 제19권6호
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• pp.709-714
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• 2018

반도체소자의 접합특성에 따라서 분극의 특성이 달라지는 원인을 조사하였다. 반도체소자의 접합특성은 최종적인 반도체소자의 효율과 관련되기 때문에 중요한 요소이며, 효율을 높이기 위해서는 반도체접합 특성을 이해하는 것은 매우 중요하다. 다양한 성질의 접합을 얻기위하여 n형의 실리콘 위에 절연물질인 carbon doped silicon oxide (SiOC) 박막을 증착하였으며, 아르곤 (Ar) 유량에 따라서 반도체기판의 특성이 달라지는 것을 확인하였다. 전도체인 tin doped zinc oxide (ZTO) 박막을 절연체인 SiOC 위에 증착하여 소자의 전도성을 살펴보았다. SiOC 박막의 특성은 플라즈마에 의하여 이온화현상이 일어날 때 Ar 유량에 따라서 이온화되는 경향이 달라지면서 반도체 계면에서의 공핍현상이 달라졌으며, 공핍층 형성이 많이 일어나는 곳에서 쇼키접합 특성이 잘 형성되는 것을 확인하였다. 아르곤 가스의 유량이 많은 경우 이온화 반응이 많이 일어나고 따라서 접합면에서 전자 홀쌍의 재결합반응에 의하여 전하들이 없어지게 되면 절연특성이 좋아지고 공핍층의 전위장벽이 증가되며, 쇼키접합의 형성이 유리해졌다. 쇼키접합이 잘 이루어지는 SiOC 박막에서 ZTO를 증착하였을 때 SiOC와 ZTO 사이의 계면에서 전하들이 재결합되면서 전기적으로 안정된 ZTO 박막을 형성하고, ZTO의 전도성이 증가되었다. 두께가 얇은 반도체소자에서 흐르는 낮은 전류를 감지하기 위해서는 쇼키접합이 이루어져야 하며, 낮은 전류만으로도 전기신호의 품질이 우수해지고 또한 채널층인 ZTO 박막에서의 전류의 발생도 많아지는 것을 확인하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권2호
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• pp.72-75
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• 2006

A CMOS compatible Super Junction LDMOS (SJ-LDMOS) structure, which reduces substrate-assisted depletion effects, is reported. The proposed structure uses a N-buffer layer between the pillars and P-substrate to achieve global charge balance between the pillars, the N-buffer layer and the P-substrate. The new structure features high breakdown voltage, low on-resistance, and reduced sensitivity to doping imbalance in the pillars.