• 제목/요약/키워드: Density of states

검색결과 555건 처리시간 0.038초

Statics variation analysis due to spatially moving of a full ocean depth autonomous underwater vehicle

  • Jiang, Yanqing;Li, Ye;Su, Yumin;Cao, Jian;Li, Yueming;Wang, Youkang;Sun, Yeyi
    • International Journal of Naval Architecture and Ocean Engineering
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    • 제11권1호
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    • pp.448-461
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    • 2019
  • Changes in gravity and buoyancy of a Full Ocean Depth Autonomous Underwater Vehicle (FOD-AUV) during its descending and ascending process must be considered very carefully compared with a Human Occupied Vehicle (HOV) or a Remotely Pperated Vehicle (ROV) whose activities rely on human decision. We firstly designed a two-step weight dropping pattern to achieve a high descending and ascending efficiency and a gravity-buoyancy balance at designed depth. The static equations showed that gravity acceleration, seawater density and displacement are three key aspects affecting the balance. Secondly, we try our best to analysis the gravity and buoyancy changing according to the previous known scientific information, such as anomaly of gravity acceleration, changing of seawater states. Finally, we drew conclusion that gravity changes little (no more than 0.1kgf, it is impossible to give a accurate value). A density-depth relationship at the Challenger Deep was acquired and the displacement changing of the FOD-AUV was calculated preciously.

아연-이온 전기화학 커패시터의 에너지 저장 성능향상을 위한 다공성 전극 제조 (Fabrication of Porous Electrodes for Zinc-Ion Supercapacitors with Improved Energy Storage Performance)

  • 안건형
    • 한국재료학회지
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    • 제29권8호
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    • pp.505-510
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    • 2019
  • Zn-ion supercapacitors (ZICs) show high energy densities with long cycling life for use in electronic devices. Porous Zn electrodes as anodes for ZICs are fabricated by chemical etching process using optimized conditions. The structures, morphologies, chemical bonding states, porous structure, and electrochemical behavior are examined. The optimized porous Zn electrode shows a root mean square of roughness of 173 nm and high surface area of $153{\mu}m^2$. As a result, ZIC using the optimized porous Zn electrode presents excellent electrochemical performance with high specific capacitance of $399F\;g^{-1}$ at current density of $0.5A\;g^{-1}$, high-rate performance ($79F\;g^{-1}$ at a current density of $10.0A\;g^{-1}$), and outstanding cycling stability (99 % after 1,500 cycles). The development of energy storage performance using synergistic effects of high roughness and high surface area is due to increased electroactive sites by surface functionalization of Zn electrode. Thus, our strategy will lead to a rational design and contribute to next-generation supercapacitors in the near future.

단일 트랜지스터용 강유전체 메모리의 Buffer layer용 $Y_{2}O_3$의 연구 ($Y_{2}O_3$ Films as a Buffer layer for a Single Transistor Type FRAM)

  • 장범식;임동건;최석원;문상일;이준신
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2000년도 하계학술대회 논문집 C
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    • pp.1646-1648
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    • 2000
  • This paper investigated structural and electrical properties of $Y_{2}O_3$ as a buffer layer of sin91r transistor FRAM (ferroelectric RAM). $Y_{2}O_3$ buffer layers were deposited at a low substrate temperature below 400$^{\circ}C$ and then RTA (rapid thermal anneal) treated. Investigated parameters are substrate temperature, $O_2$ partial pressure, post- annealing temperature, and suppression of interfacial $SiO_2$ layer generation. for a well-fabricated sample, we achieved that leakage current density ($J_{leak}$) in the order of $10^{-7}A/cm2$, breakdown electric field ($E_{br}$) about 2 MV/cm for $Y_{2}O_3$ film. Capacitance versus voltage analysis illustrated dielectric constants of 7.47. We successfully achieved an interface state density of $Y_{2}O_3$/Si as low as $8.72{\times}10^{10}cm^{-2}eV^{-1}$. The low interface states were obtained from very low lattice mismatch less than 1.75%.

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Reactive RF Magnetron Sputter Deposited $Y_2O_3$ Films as a Buffer Layer for a MFIS Transistor

  • Lim, Dong-Gun;Jang, Bum-Sik;Moon, Sang-Il;Junsin Yi
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.47-50
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    • 2000
  • This paper investigated structural and electrical properties of $Y_2$ $O_3$ as a buffer layer of single transistor FRAM (ferroelectric RAM). $Y_2$ $O_3$ buffer layers were deposited at a low substrate temperature below 40$0^{\circ}C$ and then RTA (rapid thermal anneal) treated. Investigated parameters are substrate temperature, $O_2$ partial pressure, post-annealing temperature, and suppression of interfacial $SiO_2$ layer generation. For a well-fabricated sample, we achieved that leakage current density ( $J_{leak}$) in the order of 10$^{-7}$ A/$\textrm{cm}^2$, breakdown electric field ( $E_{br}$ ) about 2 MV/cm for $Y_2$ $O_3$ film. Capacitance versus voltage analysis illustrated dielectric constants of 7.47. We successfully achieved an interface state density of $Y_2$ $O_3$/Si as low as 8.72x1010 c $m^{-2}$ e $V^{-1}$ . The low interface states were obtained from very low lattice mismatch less than 1.75%.

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비정질실리콘 pin태양전지에서 입사광 세기에 따른 전류 저압특성 (Incident Light Intensity Dependences of Current Voltage Characteristics for Amorphous Silicon pin Solar Cells)

  • 장진;박민
    • 대한전자공학회논문지
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    • 제23권2호
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    • pp.236-242
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    • 1986
  • The dependence of the current-voltage characteristics of hydrogenated amorphous silicon pin solar cells on the illumimination light intensity has been investigated. The open circuit voltage increases linearly with increasing the logarithm of light intensity up to AM 1, and nearly saturates above AM 1, indicating the open circuit voltage approaching the built-in potential of the pin solar cell above AM 1. The short circuit current density increase with light intensity in proportion to I**0.85 before and I**0.97 after light exposure. Since the series resistance devreses and shunt resistance increases with light intensily, the fill factor increases with light illumination. To increase the fill factor at high illumination in large area solar cells, t6he grid pattern on the ITO substrates should be made. Long light exposure on the solar cells gives rise to the increase of bulk resistance and defect states, resulting in the decrease of the fil factor and short circuit current density. The potential drop in the bulk of the a-Si:H pin solar cells at short circuit condition increases with decreasing temperature, and increases after long light exposure.

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Factors affecting hydraulic anisotropy of soil

  • Nurly Gofar;Alfrendo Satyanaga;Gerarldo D. Aventian;Gulnur Pernebekova;Zhanat Argimbayeva;Sung-Woo Moon;Jong Kim
    • Geomechanics and Engineering
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    • 제36권4호
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    • pp.343-353
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    • 2024
  • The hydraulic anisotropic behavior of unsaturated soil has not been fully explored in relation to the grain-size distribution. The present study conducted laboratory assessments to examine the hydraulic anisotropy condition of statically compacted specimens in various initial states. The investigation incorporated the concept of hydraulic anisotropy by employing two discrete forms of soil stratification: horizontal-layering (HL) and vertical-layering (VL). The examined soils comprised sandy silt and silty sand, exhibiting either unimodal or bimodal soil-water characteristic curve (SWCC). This study aimed to investigate the potential correlation between the hydraulic anisotropy ratio and soil properties. The present study established a correlation between the hydraulic anisotropy ratio and several soil parameters, including fine content, dry density, plastic limit, and liquid limit. The study results indicate a non-linear relationship between the percentage of fine and dry density in soils with unimodal and bimodal soil-water characteristic curve (SWCC) and hydraulic anisotropy ratio.

탄소나노튜브를 첨가한 4H-SiC MOS 캐패시터의 전기적 특성 (Electrical Characteristics of Carbon Nanotube Embedded 4H-SiC MOS Capacitors)

  • 이태섭;구상모
    • 한국전기전자재료학회논문지
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    • 제27권9호
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    • pp.547-550
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    • 2014
  • In this study, the electrical characteristics of the nickel (Ni)/carbon nanotube (CNT)/$SiO_2$ structures were investigated in order to analyze the mechanism of CNT in MOS device structures. We fabricated 4H-SiC MOS capacitors with or without CNTs. CNT was dispersed by isopropyl alcohol. The capacitance-voltage (C-V) and current-voltage (I-V) are characterized. Both devices were measured by Keithley 4200 SCS. The experimental flatband voltage ($V_{FB}$) shift was positive. Near-interface trap charge density ($N_{it}$) and negative oxide trap charge density ($N_{ox}$) value of CNT embedded MOS capacitors was less than that values of reference samples. Also, the leakage current of CNT embedded MOS capacitors is higher than reference samples. It has been found that its oxide quality is related to charge carriers and/or defect states in the interface of MOS capacitors.

Electronic transport properties of linear carbon chains encapsulated inside single-walled carbon nanotubes

  • Tojo, Tomohiro;Kang, Cheon Soo;Hayashi, Takuya;Kim, Yoong Ahm
    • Carbon letters
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    • 제28권
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    • pp.60-65
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    • 2018
  • Linear carbon chains (LCCs) encapsulated inside the hollow cores of carbon nanotubes (CNTs) have been experimentally synthesized and structurally characterized by Raman spectroscopy and transmission electron microscopy. However, in terms of electronic conductivity, their transportation mechanism has not been investigated theoretically or experimentally. In this study, the density of states and quantum conductance spectra were simulated through density functional theory combined with the non-equilibrium Green function method. The encapsulated LCCs inside (5,5), (6,4), and (9,0) single-walled carbon nanotubes (SWCNTs) exhibited a drastic change from metallic to semiconducting or from semiconducting to metallic due to the strong charge transfer between them. On the other hand, the electronic change in the conductance value of LCCs encapsulated inside the (7,4) SWCNT were in good agreement with the superposition of the individual SWCNTs and the isolated LCCs owing to the weak charge transfer.

헤비 페르미온 CePd2Si2의 전자기적 특성 (Electromagnetic Property of a Heavy Fermion CePd2Si2)

  • 정태성
    • 한국전기전자재료학회논문지
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    • 제32권5호
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    • pp.399-402
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    • 2019
  • The electromagnetic properties of heavy fermion $CePd_2Si_2$ are investigated using density functional theory using the local density approximation (LDA) and LDA+U methods. The Ce f-bands are located near the Fermi energy and hybridized with the Pd-3d states. This hybridization plays an important role in generating the physical characteristics of this compound. The magnetic moment of $CePd_2Si_2$ calculated within the LDA scheme does not match with the experimental result because of the strong correlation interaction between the f orbitals. The calculation shows that the specific heat coefficient underestimates the experimental value by a factor of 5.98. This discrepancy is attributed to the formation of quasiparticles. The exchange interaction between the local f electrons and the conduction d electrons is the reason for the formation of quasiparticles. The exchange interaction is significant in $CePd_2Si_2$, which makes the quasiparticle mass increase. This enhances the specific heat coefficient.

A DFT Study on CO2 Interaction with a BN Nano-Cage

  • Baei, Mohammad T.;Peyghan, Ali Ahmadi;Bagheri, Zargham
    • Bulletin of the Korean Chemical Society
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    • 제33권10호
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    • pp.3338-3342
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    • 2012
  • Covalent functionalization of a $B_{12}N_{12}$ nano-cage with $CO_2$ molecule has been investigated using density functional theory in terms of energetic, geometric, and electronic property analyses. Results show that besides two physisorption configurations, $CO_2$ preferably tends to perform [2+2] addition on B-N bonds of the cluster which are shared between six-membered and four-membered rings, releasing energy of 14.99 kcal/mol for adsorption of the first $CO_2$ and of 15.45 kcal/mol for the second one (per each molecule). On the basis of calculated density of states, we have found that the electronic properties of the physisorbed $B_{12}N_{12}$ by $CO_2$ have not changed, while slight changes have been predicted in the functionalized cases. Present results might be helpful to provide an effective way to modify the $B_{12}N_{12}$ properties for further purifications and applications.