• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.474-478
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• 2007

Nanostructures of $SiN_x$ were made by bombardment of ionized $N_2$ on Si surface and subsequent annealing. Atomic force micrograph showed the density of $SiN_x$ nanostructures was $3\times10^{10}/cm^2$. Their lateral size and height were 40$\sim$60 nm and 15 nm, respectively. The chemical state of the nanostructure was measured using X-ray photoelectron spectroscopy, which changed from $SiN_x$ to $Si_3N_4\;+\;SiN_x$ as the bombarding ionized gas current increases. Upon annealing, transmission electron micrograph showed a clear evidence for crystalline Si phase formation inside the $SiN_x$ nanostructures. Photoluminescence peak observed at around 400nm was thought to be originated from the interface states between the nanocrystalline Si and surrounding $SiN_x$ nanostructures.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2001.11a
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• pp.7-7
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• 2001

The increasing interest in light weight materials coupled to the need for cost -effective processing have combined to create a significant opportunity for aluminum P/M. particularly in the automotive industry in order to reduce fuel emissions and improve fuel economy at affordable prices. Additional potential markets for Al PIM parts include hand tools. Where moving parts against gravity represents a challenge; and office machinery, where reciprocating forces are important. Aluminum PIM adds light weight, high compressibility. low sintering temperatures. easy machinability and good corrosion resistance to all advantages of conventional iron bm;ed P/rv1. Current commercial alloys are pre-mixed of either the AI-Si-Mg or AL-Cu-Mg-Si type and contain 1.5% ethylene bis-stearamide as an internal lubricant. The powder is compacted in closed dies at pressure of 200-500Mpa and sintered in nitrogen at temperatures between $580~630^{\circ}C$ in continuous muffle furnace. For some applications no further processing is required. although most applications require one or more secondary operations such as sizing and finishing. These sccondary operations improve the dimension. properties or appearance of the finished part. Aluminum is often considered difficult to sinter because of the presence of a stable surface oxide film. Removal of the oxide in iron and copper based is usually achieved through the use of reducing atmospheres. such as hydrogen or dissociated ammonia. In aluminum. this occurs in the solid st,lte through the partial reduction of the aluminum by magncsium to form spinel. This exposcs the underlying metal and facilitates sintering. It has recently been shown that < 0.2% Mg is all that is required. It is noteworthy that most aluminum pre-mixes contain at least 0.5% Mg. The sintering of aluminum alloys can be further enhanced by selective microalloying. Just 100ppm pf tin chnnges the liquid phase sintering kinetics of the 2xxx alloys to produce a tensile strength of 375Mpa. an increilse of nearly 20% over the unmodified alloy. The ductility is unnffected. A similar but different effect occurs by the addition of 100 ppm of Pb to 7xxx alloys. The lend changes the wetting characteristics of the sintering liquid which serves to increase the tensile strength to 440 Mpa. a 40% increase over unmodified aIloys. Current research is predominantly aimed at the development of metal matrix composites. which have a high specific modulus. good wear resistance and a tailorable coefficient of thermal expnnsion. By controlling particle clustering and by engineering the ceramic/matrix interface in order to enhance sintering. very attractive properties can be achicved in the ns-sintered state. I\t an ils-sintered density ilpproaching 99%. these new experimental alloys hnve a modulus of 130 Gpa and an ultimate tensile strength of 212 Mpa in the T4 temper. In contest. unreinforcecl aluminum has a modulus of just 70 Gpa.

• Journal of the Korean Society for Marine Environment & Energy
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• v.4 no.4
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• pp.21-31
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• 2001

When an oil-spilling accident occurs at sea, it is of the primary importance to predict the amount of oil leakage for the swift response and decision-making. The simplest method of oil-leakage estimation is based on the hydrostatic pressure balance between oil inside the tank and seawater outside of leakage hole, that is the so-called Torricelli equilibrium relation. However, there exists discrepancy between the reality and the Torricelli relation, since the latter is obtained from the quasi-steady treatment of Bernoulli equation ignoring viscous friction. A preliminary experiment has been performed to find out the oil-leaking speed and shape. Soy-bean oil inside the inner tank was ejected into water of the outer tank through four different leakage holes to record the amount of oil leakage. Furthermore, a CFD (Computational Fluid Dynamics) method was utilized to simulate the experimental situation. The Wavier-Stokes equations were solved for two-density flow of oil and water. VOF method was employed to capture the shape of their interface. It is found that the oil-leaking speed varies due to the frictional resistance of the leakage hole passage dependent on its aspect ratio. The Torricelli factor relating the speed predicted by using the hydrostatic balance and the real leakage speed is assessed. For the present experimental setup, Torricelli factors were in the range of 35%~55% depending on the aspect ratio of leakage holes. On the other hand, CFD results predicted that Torricelli factor could be 52% regardless of the aspect ratio of the leakage holes, when the frictional resistance of leakage hole passage was neglected.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.648-652
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• 1998

TIG remelting was performed to harden the surface of automobile earn shaft. Multipass remelting was conducted in longitudinal direction under argon gas atmosphere. The microstructure of as-east earn shaft was gray iron which consisted of flake graphite and pearlitic matrix. The remelted area had microstructue of both fine pearlite and ledeburite structure that consisted of globular austenite and $Fe_3C$. Hardness for as-cast earn shaft had HRc 25~28, however it increased at remelted area to HRc 53~55. Black line was found at heat affected zone next to the fusion line, that is remelt area of previous pass, during multipass remelting. Black line was identified as graphite, which was transformed from $Fe_3C$. in the ledeburite structure. It is observed that all graphites were nucleated at $Fe_3C$. and matrix interface. High density energy laser remelting process was also applied to verify whether black line could be eliminated. However, black line was still existed as observed in TIG remelting process. Regraphitization was simulated on the ledeburitic structure specimen using Gleeble 1500 with conditions of 1100 and 100$0^{\circ}C$ for 0.5, I, 3, 5 and 1Osee. From the fact that graphite was formed even at the simulation condition of 100$0^{\circ}C$ for 0.5sec, it is seen that regraphitization is an inevitable phenomenon generated whatever processes used during multipass overlap remelting.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.2
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• pp.47-53
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• 2015

The effects of electroless nickel immersion gold (ENIG) and organic solderability preservative (OSP) surface finishes on the in-situ intermetallics reaction and the electromigration (EM) reliability of Sn-3.0Ag-0.5Cu (SAC305) solder bump were systematically investigated. After as-bonded, $(Cu,Ni)_6Sn_5$ intermetallic compound (IMC) was formed at the interface of the ENIG surface finish at solder top side, while at the OSP surface finish at solder bottom side,$ Cu_6Sn_5$ and $Cu_3Sn$ IMCs were formed. Mean time to failure on SAC305 solder bump at $130^{\circ}C$ with a current density of $5.0{\times}10^3A/cm^2$ was 78.7 hrs. EM open failure was observed at bottom OSP surface finish by fast consumption of Cu atoms when electrons flow from bottom Cu substrate to solder. In-situ scanning electron microscope analysis showed that IMC growth rate of ENIG surface finish was much lower than that of the OSP surface finish. Therefore, EM reliability of ENIG surface finish was higher than that of OSP surface finish due to its superior barrier stability to IMC reaction.

• Korean Chemical Engineering Research
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• v.50 no.6
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• pp.1021-1026
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• 2012

The transient mass transfer in a single droplet system consisting of 1-octanol (continuous phase)/aqueous succinic acid solution (dispersed phase) was investigated in the presence of chemical reaction, which is acid/anion exchange reaction of succinic acid and tri-n-octylamine (TOA). This succinic acid extraction by TOA can be considered to occur at the interface between organic and aqueous phase, that is, heterogeneous reaction system. The basic properties of the system such as viscosity, density, distribution coefficient, terminal velocity of droplet, and diffusion coefficient were measured experimentally or calculated theoretically, and used for theoretical calculation of characteristic parameters of mass transfer later. The effects of succinic acid concentration on the terminal velocity was negligible in the existence of TOA, although the terminal velocity increases with succinic acid concentration in the absence of TOA. On the contrary, the terminal velocity decreases with TOA concentration. While droplets falls through organic phase, the trajectory of droplets is observed to oscillate around its vertical path. A mass trnasfer cell was prepared to monitor the mass transfer behavior in a single droplet and used to measure the mean concentration of succinic acid inside droplet. The results are expressed with dimensionless parameters. Under 50 g/L succinic acid condition, the system with 0.1 mol/kg TOA showed that the molar flux decreases in proportion to the decrease of concentration gradient, while in the case of 0.5 mol/kg TOA Sh increases rapidly with time indicating the molar flux of succinic acid decreases relatively slowly compared to the decrease in concentration gradient.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.247-253
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• 1996

Microscopic analysis has been performed in order to investigate effects of the microstructure of the starting feed rods on the morphology of the S-L interface and the stability of the molten zone during single crystal growth of $SrTiO_{3}$ using a floating zone method. Undoped and $Fe_{2}O_{3}$ doped $SrTiO_{3}$ doped $SrTiO_{3}$ specimens, sintered at the different temperatures have been used. In the case of the feed rods sintered at the lower temperature($1400^{\circ}C$), the poor densification made the stability of the molten zone difficult to maintain. The feed rods sintered at the higher temperature ($1600^{\circ}C$) exhibited the higher density but their molten zone was difficult to maintain due to the presence of the abnormally grown grains. It is concluded that the uniform grain size distribution of the feed rod is the critical factor to maintain the stable molten zone and therefore to give optimum growth condition during FZ single crystal growth.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.37-45
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• 2008

In this study, reliabilities of Cu (60 um)/SnAg (20 um) double-bump flip chip assemblies were investigated for the flip chip interconnections on organic substrates with 100 um pitch. After multiple reflows at $250^{\circ}C\;and\;280^{\circ}C$, bump contact resistances were almost same regardless of number of reflows and reflow temperature. In the high temperature storage test, there was no bump contact resistance change at $125^{\circ}C$ up to 2000 hours. However, bump contact resistances slightly increased at $150^{\circ}C$ due to Kirkendall voids formation. In the electromigration test, Cu/SnAg double-bump flip chip assemblies showed no electromigration until about 600 hours due to reduced local current density. Finally, in the thermal cycling test, thermal cycling failure mainly occurred at Si chip/Cu column interface which was found out the highest stress concentration site in the finite element analysis. As a result, Al pad was displaced out under thermal cycling. This failure mode was caused by normal compressive strain acting Cu column bumps along perpendicular direction of a Si chip.

• Journal of the Korean Ceramic Society
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• v.42 no.2 s.273
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• pp.104-109
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• 2005

To study the role of PbO as the buffer layer, Pt/PZT/PbO/Si with the MFIS structure was deposited on the p-type (100) Si substrate by the r.f. magnetron sputtering with $Pb_{1.1}Zr_{0.53}Ti_{0.47}O_3$ and PbO targets. When PbO buffer layer was inserted between the PZT thin film and the Si substrate, the crystallization of the PZT thin films was considerably improved and the processing temperature was lowered. From the result of an X-ray Photoelectron Spectroscopy (XPS) depth profile result, we could confirm that the substrate temperature for the layer of PbO affects the chemical states of the interface between the PbO buffer layer and the Si substrate, which results in the inter-diffusion of Pb. The MFIS with the PbO buffer layer show the improved electric properties including the high memory window and low leakage current density. In particular, the maximum value of the memory window is 2.0V under the applied voltage of 9V for the Pt/PZT(200 nm, $400^{\circ}C)/PbO(80 nm)/Si$ structures with the PbO buffer layer deposited at the substrate temperature of $300^{\circ}C$.

• Korean Journal of Materials Research
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• v.9 no.7
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• pp.753-759
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• 1999

The microstructure and electrical properties of ZNR that W $O_3$ is added in the range 0.5~4.0mol%, were investigated. The major part of W $O_3$ were segregated at the nodal point and W-rich phase was formed. Three crystalline phases, such as W-rich phase (W $O_3$), Bi-rich phase (B $i_2$W $O_{6}$ ), and spinel phase (Z $n_{2.33}$S $b_{0.67}$ $O_4$) were confirmed to be co-existed at the nodal point The average grain size increased in the range 15.5~29.9$\mu\textrm{m}$ with increasing W $O_3$ additive content. Consequently. W $O_3$ acted as a promotion additive of grain growth. As the W $O_3$ additive content increases. the varistor voltage and the nonlinear exponent decreased in the range 186.82~35.87V/mm and 20.90~3.34, respectively, and the leakage current increased in the range of 22.39~83.01 uh. With increasing W $O_3$ additive content, the barrier height and the density of interface states decreased in the range 1.93~0.43eV and (4.38~1.22)$\times$10$^{12}$ $\textrm{cm}^2$, respectively. W $O_3$ acted as an acceptor additive due to the donor concentration increasing in the range (1.06~0.38)$\times$10$^{18}$ /㎤with increasing W $O_3$ additive content.t.t.