• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제19권4호
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• pp.334-338
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• 2006

Poly silicon TFT requires high quality dielectric film; conventional method of growing silicon dioxide needs highly hazardous chemicals such as silane. We have grown high quality dielectric film of silicon dioxide using non-hazardous chemical such as TFOS and ozone as reaction gases by APCVD. The films grown were characterized through C-V curves of MOS structures. Conventional APCVD requires high temperature processing where as in the process of current study, we developed a low temperature process. Interface trap density was substantially decreased in the silicon surface coated with the silicon dioxide film after annealing in nitrogen ambient. The interface with such low trap density could be used for poly silicon TFT fabrication with cheaper cost and potentially less hazards.

• Journal of the Korean Institute of Telematics and Electronics A
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• 제33A권12호
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• pp.59-64
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• 1996

InSb MIS devices prepared by remote PECVD SiO$_{2}$ were fabricated. The SiO$_{2}$ films on InSb were deposited at atemperature range of 67~190$^{\circ}$C. The effects of deposition temperature on the structural characteristics of the SiO$_{2}$ films evaluated Auger electron spectroscopy showed that atomic raito of silicon to oxygen was 0.5 and composition toms were distributed uniformaly throuout the oxide film. The transition region is about 100$\AA$ for SiO$_{2}$/InSb interface. The leakage current density at 1MV/cm and the breakdownelectric field of the MiS device using SiO$_{2}$ film deposited at 105$^{\circ}$C were about 22 nA/cm$^{2}$ and 3.5MV/cm, respectively. The interface-state density at mid-bandgap extracted from 1 MHz high frequency C-V measurement was about 2X10$^{11}$ cm$^{-2}$eV$^{-1}$.

• Proceedings of the KIEE Conference
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• 대한전기학회 1989년도 추계학술대회 논문집 학회본부
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• pp.111-113
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• 1989

Recently nitrided oxides have been investigated for the application as the replacement of thermally grown oxides in the MIS devices. In this paper, nitrided oxides which were treated by the $N_2$ plasma were fabricated with the 350 $^{\circ}C$ substrate temperature, 0.2 torr chamber pressure, 250 watt RF power, 60 seem $N_2$ flow rate, 30 mins treatment time. After the UV light is radiated on the sample, it is noticed that the interface state density, $N_{ss}$, is slightly decreased. Under the UV light, the samples are stress by $\pm$DC bias. After those treatment interface state density. $N_{ss}$, is increased.

• Proceedings of the IEEK Conference
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.711-714
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• 2003

In this presentation, we investigated the abnormal subthreshold slope of the FD SOI MOSFETs upon the rapid thermal annealing. Based on subthreshold technique and C-V measurement, we deduced that the hump of the subthreshold slope comes from the abnormal D$_{it}$ distribution after RTA. The local kink in the interface trap density distribution by RTA drastically degrades the subthreshold characteristics and mini hump can be eliminated by S-PGA.A.

• Journal of the Korean Society for Industrial and Applied Mathematics
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• 제16권4호
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• pp.225-234
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• 2012

We present two high-order potential flow models for the evolution of the interface in the Rayleigh-Taylor instability in two dimensions. One is the source-flow model and the other is the Layzer-type model which is based on an analytic potential. The late-time asymptotic solution of the source-flow model for arbitrary density jump is obtained. The asymptotic bubble curvature is found to be independent to the density jump of the fluids. We also give the time-evolution solutions of the two models by integrating equations numerically. We show that the two high-order models give more accurate solutions for the bubble evolution than their low-order models, but the solution of the source-flow model agrees much better with the numerical solution than the Layzer model.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.886-888
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• 2009

We fabricated flexible electronic paper display(EPD) by using toner particles on plastic (PC) substrate. We observed the relationship between contrast ratio and changes of rib structures. One is a fabrication of ribs on bottom substrate. The display with ribs on bottom substrate had higher contrast ratio about 46% than display with ribs on top substrate. The other is a change of density of rib. The less density of ribs fabricated, the higher the contrast ratio become.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.904-907
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• 2007

We reported a simplified circuit model to investigate the interface states and the quality of a-Si film based on a MIS structure using admittance spectroscopy. The model can be employed easily to monitor the fabrication process of thin-film transistor and to obtain the important parameters.

• Bulletin of the Korean Chemical Society
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• 제10권6호
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• pp.585-591
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• 1989

The effects of the charged metal on the overall electrostatic potential profiles and the capacitances of the electrical double layer are brought out. A model with a simplified jellium and a point-charged electrolyte is utilized in the present calculations. Electrons are assumed not to penetrate electrode surface due to a strong screening of electrolyte at the interface. Electron density functions and ion density functions are obtained, which are also based upon the Poisson equation and Boltzmann equation on either side of the interface. A complete potential profile starting from bulk electrode and ending at bulk electrolyte is obtained by connecting the two potential profiles (one inside the metal electrode, the other inside the electrolyte) with proper boundary conditions. In spite of the simplicity of the model, the present model reveals the importance of the effect of the charged metal on the electrostatic potential profile and the electrical double layer capacitances. The results are discussed and compared with the predictions by Gouy Chapman theory.

• Journal of Advanced Research in Ocean Engineering
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• 제1권1호
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• pp.36-43
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• 2015

Since the crack generation and its propagation caused by welding defects is one of the main hull damage patterns, the simulation of crack propagation process has an important significance for ship safety. Based on interface element method, a finite element model to simulate crack propagation is studied in the paper. A Lennard-Jones type potential function is employed to define potential energy of the interface element. Tensile tests of steel flat plates with initial central crack are carried out. Surface energy density and spring critical stress that are suitable for the simulation of crack propagation are determined by comparing numerical calculation and tests results. Based on a large number of simulation results, the curve of simulation correction parameter plotted against the crack length is calculated.

• Transactions of the Korean Society of Mechanical Engineers A
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• 제33권11호
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• pp.1249-1255
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• 2009

Cord-rubber composites widely used in tires show very complicated mechanical behavior such as nonlinearity and large deformation. Three-phase(cord, rubber and the interface) modeling has been used to analyze the stress distribution in the cord-rubber composites more accurately. In this study, finite element methods were performed using two-dimensional generalized plane strain element and plane strain element to investigate the stress distribution and effective modulus of cord-rubber composites. Neo Hookean model was used for rubber property and several interface properties were assumed for various loading directions. It was found that the interface properties affect the effective modulus and the distributions of shear stress.