• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 춘계학술회의 초록집
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• pp.8-10
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• 2010

We report the enhancement of hole injection using thermally evaporated $CuO_x$ layer between Ag anode and 4,4'-Bis[N-(1-naphthyl)-N-phenylamino]biphenyl ($\alpha$-NPD) in top-emitting organic light-emitting diode (TEOLED). The operation voltage at the current density of $1mA/cm^2$ of TEOLEDs decreased from 6.2 V to 5.0 V as the $CuO_x$ layer inserted between Ag and $\alpha$-NPD. $\alpha$-NPD was deposited in situ on Ag/$CuO_x$ and Ag anodes, and their interface dipole energies were quantitatively determined using synchrotron radiation photoemission spectroscopy. The dipole energy of Ag/$CuO_x$ was lower by 0.05 eV even though Ag/$CuO_x$ had a higher work function. The work function of Ag/$CuO_x$ is higher by 0.53 eV than that of Ag, resulting in a decrease of the turn-on voltage via reduction of hole injection barrier.

• 한국표면공학회지
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• 제39권2호
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• pp.57-63
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• 2006

In this study, In-base solder was applied to the interface between $Bi_2Sr_2Ca_1Cu_2O_x(Bi_{2212})$ superconductor and Cu-Ni shunt metal at the temperature lower than $150^{\circ}C$. Most of the cases, $Bi_{2212}$ superconductor was precoated with Ag by electroplating in order to improve the contact properties of the solder layer. When the superconductor was directly soldered on to the superconductor, the solder was easily separated without external force. The shear strength of the contact between superconductor and shunt metal increased from 69.2 kgf to 74.4 kgf and 80.1 kgf, as the current density of the Ag electroplating was changed from 63 mA to 96 mA and 126 mA, respectively. The contact strength also increased to 49.9 kgf and 69.2 kgf when thickness of the electroplated Ag layer increased to $5{\mu}m$ and $10{\mu}m$, reapectively.

• 한국표면공학회지
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• 제46권1호
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• pp.9-15
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• 2013

The effect of the additionally applied electrical current on the adhesion strength between electroless Cu and polyimide films was investigated. Peel tests were performed after applying electrical current within the range from 0.1 to 100 mA for the duration from 1 to 30 minutes. Sample with more than 1 mA of additional electrical current for 1 minute showed higher adhesion strength than that without additional electrical current. However, samples with 10 mA of additional electrical current for more than 10 miniutes showed the degradation of adhesion strength. Ra and RMS values of the peeled polyimide surface were proportional to the adhesion strength though there were no significant changes in the morphology of the peeled surfaces with varied amount and time-length of additional electrical current. Applying electrical current could increase the density of chemical bonding, which results in increase of the adhesion strength between copper and polyimide. However, in the case of applying additional electrical current for excessive amount or time, the degradation of the adhesion strength owing to the formation of copper oxide at the interface could occur.

• Journal of Ginseng Research
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• 제39권2호
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• pp.135-140
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• 2015

Background: A leaf cuticle has different structures and functions as a barrier to water loss and as protection from various environmental stressors. Methods: Leaves of Panax ginseng were examined by scanning electron microscopy and transmission electron microscopy to investigate the characteristics and development of the epicuticular structure. Results: Along the epidermal wall surface, the uniformly protuberant fine structure was on the adaxial surface of the cuticle. This epicuticular structure was highly wrinkled and radially extended to the marginal region of epidermal cells. The cuticle at the protuberant positions maintained the same thickness. The density of the wall matrix under the structures was also similar to that of the other wall region. By contrast, none of this structure was distributed on the abaxial surface, except in the region of the stoma. During the early developmental phase of the epicuticular structure, small vesicles appeared on wallecuticle interface in the peripheral wall of epidermal cells. Some electron-opaque vesicles adjacent to the cuticle were fused and formed the cuticle layer, whereas electron-translucent vesicles contacted each other and progressively increased in size within the epidermal wall. Conclusion: The outwardly projected cuticle and epidermal cell wall (i.e., an epicuticular wrinkle) acts as a major barrier to block out sunlight in ginseng leaves. The small vesicles in the peripheral region of epidermal cells may suppress the cuticle and parts of epidermal wall, push it upward, and consequently contribute to the formation of the epicuticular structure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.99-99
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• 2008

대구경, 고품질 GaN 단결정 기판은 HVPE 방법을 이용하여 제조하였다. 이때 성장 방법은 기판인 $Al_2O_3$ 단결정 기판을 질화처리 하였으며, 이종기판 성장 시 야기되는 격자 불일치와 성장 후 냉각동안에 열팽창 계수의 불일치로 야기되는 휨이나 crack 발생을 제거하기 위하여 step-growth 방법을 사용하였다. 사파이어 위에 성장된 GaN의 기판은 두께가 380um이며, 직경은 3"로 crack 발생은 없었으며, $600^{\circ}C$에서 레이저 분리 방법을 이용하여 사파이어와 분리하였다. 그러나 분리된 기판은 이종기판과의 접촉면에서 고밀도 결함발생으로 인하여 휨이 발생하였으며, 표면을 연마한 후 DCXRD의 FWHM은 107 arcsec, PL을 이용한 결함밀도는 $6.2\times10^6/cm^2$으로 나타났다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권10호
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• pp.461-466
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• 2006

In the present work, we investigated the photodissolution and photodiffusion effect on the interface of Ag/chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film by measuring the absorption coefficient, the optical density, the resistance change of Ag layer. It was found that the photodissolutioniphotodiffution ratio depends on the magnitude of photon energy absorbed in the chalcogenide thin film and the depth of photodiffution was proportional to the square root of the exposed time. Also, we have investigated the holographic grating formation with P-polarization states on chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film and $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film. Holographic gratings have been formed using He-Ne laser (632.8 nm) which have a smaller energy than the optical energy gap, $E_g\;_{opt}$ of the film, i. e., an exposure of sub-bandgap light $(h{\upsilon} under P-polarization. As the results, we found that the diffraction efficiency on $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film was more higher than that on single $As_{40}Ge_{10}Se_{15}S_{35}$ thin film. Also, we obtained that the maximum diffraction efficiency was 0.27 %, 1,000 sec on $As_{40}Ge_{10}Se_{15}S_{35}\;(1{\mu}m)/Ag$ (10 nm) double layer structure thin film by (P: P) polarized recording beam. It will offer lots of information for the photodoping mechanism and the analyses of chalcogenide thin films.

• 반도체디스플레이기술학회지
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• 제10권3호
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• pp.67-74
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• 2011

In this study, we have investigated the effect of the substrate temperature on the structural and the electrical characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering under various substrate temperature. The substrate temperature has been changed from room temperature to $400^{\circ}C$. Samples which were deposited under $250^{\circ}C$ show amorphous structure. The electrical resistivity of crystalline-IZO (c-IZO) film was higher than that of amorphous-IZO (a-IZO) film. And the electrical resistivity showed minimum value near $150^{\circ}C$ of deposition temperature. The OLED device was fabricated with different IZO substrates made by configuration of IZO/$\acute{a}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current density-voltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.

• 대한전자공학회논문지SD
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• 제41권3호
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• pp.15-30
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• 2004

본 연구는 게이트 매몰형 단채널 GaAs MESFET의 암전류 특성과 광전류 특성을 해석적으로 모델링하였다. 모델링 결과, 광조사에 의한 중성영역내의 광 전도도의 증가 보다 공핍층 내의 광 기전력 발생에 따른 공핍층 폭의 감소효과로 인한 드레인 전류의 증가가 크게 일어남을 보이고 있다. 중성영역의 케리어 밀도 변화는 1차원 케리어 연속 방정식으로부터 도출하였으며, 광 기전력 도출은 게이트-공핍층 경계면의 광전류와 열전자 방출전류가 상쇄되는 조건으로 도출하였다. 드레인전압 인가에 따른 단채널 소자의 채널 방향의 전계효과를 고려한 2차원 Poisson 방정식의 해법을 제안하였다. 모델링 결과를 시뮬레이션한 결과, 적절한 암전류 및 광전류 특성에 대한 통합적 모델이 얻어짐을 확인하였다.

• 한국결정학회지
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• 제9권1호
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• pp.30-38
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• 1998

주파수 무게센서를 장착한 자동직경제어 방식에 의해 Bi12GeO20 단결정을 쵸크랄스키법으로 육성하였다. 회전속도에 따른 계면모양의 변화를 관찰하기 위해, 회전속도를 변화시키면서 육성한 결과, 23-21rpm에서 평평한 계면이 형성되었다. Bi2O3의 휘발에 의한 화학 양론적 조성으로부터 이탈에 따른 Bi4Ge3O12의 생성과 이로 인한 색 변화를 관찰하기 위해, Bi2O3의 함량을 0.1-1mol% 보충한 결과, 0.3mol% 증발 보상을 하였을 때, 내포물이 적은 연한 갈색의 광학용 단결정을 육성할 수 있었다. 이러한 성장조건 하에서 직경 25mm x 길이 70mm 인 거의 일정한 직경을 갖는 단결정이 육성되었고 결함밀도는 103개/cm2를 나타내었다. XRD및 TEM에 의해 단결정의 우선 성장방향을 측정한 결과<110>이었다.

• 한국결정학회지
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• 제6권2호
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• pp.141-157
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• 1995

직경자동제어장치를 이용한 초크라스키법에 의해 대형 TeO2 단결정을 공기 중에서 성장시켰다. 온도구배를 가능한 한 적게 한 성장조건 하에서 단결정과 도가니의 직경비율을 60-70% 범위에서 양질의 단결정 성장이 가능하였다. 이 때 결정의 품질을 좌우하는 주요 요인은 인상 및 회전 속도였다. 무색 투명한 고품질 단결정을 육성하기 위한 인상속도는 1.2mm/hr 이하였고, 고액계면은 10-23 rpm 이하일 때 볼록하였으며, 25 rpm 이상일 때 오목하였다. 단결정의 성장은 {110} 방향의 종자결정을 사용하였다. 용융체 내의 백금 함량이 증가하면 조성적 과냉이 발생하여, 성장되는 결정 내에 기포가 포획되므로 성장된 단결정의 질이 저하된다. 적외선 측정결과 파수 2,000cm-1 이상에서 완전 투명하였고, 전위밀도를 측정 결과 직경자동제어를 이용한 경우 3×103/cm2 - 2×104/cm2로 양호하였으며 수동성장인 경우도 결정과 도가니의 직경비율이 40-45%의 범위에서는 매우 양호하였다. 또한 포유물 등 불순물에 혼입 원인에 대하여 논하였다.