• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.4
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• pp.625-630
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• 1987

Thermal evaporated SiO rf sputtered SiO2 thin films were most widely used to the gate oxide of TFTs. In this paper, the difference of trap density and distribution between SiO2 and SiO2 film were studied. TFTs using SiO and SiO2 thin film for the gate oxide were fabricated. The output characteirstics of TFTs and the time dpendencd of the leakage current were measured. Models of the carrier transport and carrier trapping in TFT were proposed. The trap density was obtained by substituting measured value for the equation derived from the proposed model. It was found that rf sputtered SiO2 had more traps at interface than thermal evaporated SiO.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.2
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• pp.17-24
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• 2000

In this paper, the stress and transient currents associated with the on and off time of applied voltage were used to measure the density and distribution of high voltage stress induced traps in thin silicon oxide films. The transient currents were due to the discharging of traps generated by high stress voltage in the silicon oxides. The trap distributions were relatively uniform new both cathode and anode interface. The trap densities were dependent on the stress polarity. The stress generated trap distributions were relatively uniform the order of 1011~1021[states/eV/cm2] after a stress voltage. It appear that the stress and transient current that flowed when the stress voltage were applied to the oxide was caused by carriers tunneling through the silicon oxide by the high voltage stress generated traps.

• Proceedings of the Safety Management and Science Conference
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• 2002.11a
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• pp.273-277
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• 2002

In the electrode fabrication of unit cell, we found that optimal the electrochemical characteristics were obtained with at 90 wt.% of activated carbon(BP-20), 5 wt.% of conducting agent(Ppy, Super P) and 5 wt.% of P(VdF-co-HFP)/PVP mixed binder. The electrochemical characteristics of unit cell with Ppy improver were as follows : 37.6 F/g of specific capacitance, 0.98 $\Omega$ of AC-ESR, 2.92 Wh/kg and 6.05 Wh/L of energy density, and 754 W/kg and 1,562 W/L of power density. It was confirmed that internal resistance were reduced due to the increase of electrical conductivity and filling density by the introduction of conductivity agent, and content of conducting agent was suitable in the range of 4~6 wt.%. According to the impedance measurement of the electrode with conductivity agent, we found that it was possible to charge rapidly by the fast steady-state current convergence due to low equivalent series resistance(AC-ESR), fast charge transfer rate at interface between electrode and electrolyte, and low RC time constant.

• Bulletin of the Korean Chemical Society
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• v.31 no.11
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• pp.3183-3189
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• 2010

In order to increase the specific capacitance and energy density of supercapacitors, non-aqueous supercapacitors were prepared using lithium transition-metal oxides and activated carbons as active materials. The electrochemical properties were analyzed in terms of the content of lithium transition-metal oxides. The results of cyclic voltammetry and AC-impedance analyses showed that the pseudocapacitance may stem from the synergistic contributions of capacitive and faradic effects; the former is due to the electric double layer which is prepared in the interface of activated carbon and organic electrolyte, and the latter is due to the intercalation of lithium ($Li^+$) ions. The specific capacitance and energy density of a supercapacitor improved as the lithium transition-metal oxides content increased, showing 60% increase compared to those of supercapacitor using a pure activated carbon positive electrode.

• Transactions on Electrical and Electronic Materials
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• v.10 no.3
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• pp.80-84
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• 2009

The microstructure, voltage-current, capacitance-voltage, and dielectric characteristics of CCT doped Zn/Pr-based varistors were investigated at different sintering temperatures. As the sintering temperature increased, the average grain size increased from 4.3 to 5.1 ${\mu}m$ and the sintered density was saturated at 5.81 g $cm^{-3}$. As the sintering temperature increased, the breakdown field decreased from 7,532 to 5,882 V $cm^{-1}$ and the nonlinear coefficient decreased from 46 to 34. As the sintering temperature increased, the donor density, density of interface states, and barrier height decreased in the range of (9.06-7.24)${\times}10^{17}\;cm^{-3}$, (3.05-2.56)${\times}10^{12}\;cm^{-2}$, and 1.1-0.95 eV, respectively. The dielectric constant exhibited relatively low value in the range of 529.1-610.3, whereas the $tan{\delta}$ exhibited a high value in the range of 0.0910-0.1053.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.10 no.6
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• pp.109-115
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• 2001

This paper investigates the mechanical characteristics of angle-ply laminates with non-woven carbon tissue. The lami- nates were made by inserting non-woven carbon tissue at the interface. Specimens were rounded near the tabs by grinding and polishing to reduce the stress concentration. Cyclic loads were applied to the specimens and the stress and fatigue life curves were obtained. The matrix crack density was also evaluated to check the effects of non-woven carbon tissue on the fracture resistance of composite laminates. C-Sean technique was used to evaluate the delamination, and SEM was used to understand the fracture mechanisms of the laminates. Experimental results show that the fatigue strength and life of composite laminates were increased by inserting non- woven carbon tissues. The results also show that the matrix crack density and delamination area were reduced by inserting non-woven carbon tissues.

• Journal of Powder Materials
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• v.26 no.5
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• pp.369-374
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• 2019

The properties of powder metallurgy products are related to their densities. In the present work, we demonstrate a method to apply artificial neural networks (ANNs) trained on experimental data to predict the bulk density of barium titanates. The density is modeled as a function of pressure, press rate, heating rate, sintering temperature, and soaking time using the ANN method. The model predictions with the training and testing data result in a high coefficient of correlation (R2 = 0.95 and Pearson's r = 0.97) and low average error. Moreover, a graphical user interface for the model is developed on the basis of the transformed weights of the optimally trained model. It facilitates the prediction of an infinite combination of process parameters with reasonable accuracy. Sensitivity analysis performed on the ANN model aids the identification of the impact of process parameters on the density of barium titanates.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.226-226
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• 2016

PHOLED devices which have the structure of ITO/HAT-CN(5nm)/NPB(50nm)/EML(30nm)/TPBi(10nm)/Alq3(20nm)/LiF(0.8nm)/Al(100nm) are fabricated to investigate the green emission profile in EML by using a gasket doping method. CBP and Ir(ppy)3 (2% wt) are co-deposited homogeneously as a background material of EML for green PHOLED, then a 5nm thickness of additionally doped layer by Ir(btp)2 (8% wt) is formed as a profiler of the green emission. The total thickness of the EML is maintained at 30nm while the distance of the profiler from the HTL/EML interface side (x) is changed in 5nm steps from 0nm to 25nm. As shown in Fig. 1, the green (513nm) peak from Ir(ppy)3 is not observed when Ir(btp)2 is also doped homogeneously because Ir(ppy)3 works as an gasket dopant of the Ir(btp)2 :CBP system. Therefore, in this experment, Ir(btp)2 can be used as a profiler of the green emission in CBP:Ir(ppy)3 system. The emission spectra from the PHOLED devices with different x are shown in Fig. 2. In this gasket doping system, stronger red peak means more energy transfer from green to red dopant or higher exciton density by green dopant. To find the green emission profile, the external quantum efficiency (EQE) at 3mA/cm2 for red peaks are calculated. More green light emission at near EML/HBL interface than that of HTL/EML is observed (insert of Fig. 2). This means that the higher exciton density at near EML/HBL interface in homogeneously doped CBP with Ir(ppy)3. As shown in Fig. 3, excitons can be quenched easily to HTL(NPB) because the T1 level of HTL(2.5eV) is relatively lower than that of EML(2.6eV). On the other hand, the T1 level of HBL(2.7eV) is higher than that of EML.

• The Journal of Korean Academy of Prosthodontics
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• v.37 no.5
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• pp.672-686
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• 1999

The purpose of this study was to compare the casting problem and corrosion behavior in two types of HL Hexed abutments of the Steri-Oss system ; gold/plastic coping and gold coping. The anodic Polarization behavior, the galvanic corrosion between abutments and Type III gold alloys, before and after casting were analyzed, and the crevice corrosion of casting samples was analyzed with the CPPT test and the SEM. The results are as follows : 1. Anodic polarization behavior of samples ; Before casting, gold/plastic coping and gold coping was shown to have a similar corrosion pat-terns. Type III casting gold alloy was shown to have a lower corrosion potential and passivation film. Corrosion potential of the case of gold/plastic coping after casting was higher than that of gold coping, but the region of passivation film for gold/plastic coping was smaller than that of gold coping. 2. Galvanic corrosion behavior of samples ; Contact current density between casting gold alloys and gold/plastic before casting was higher than that between gold coping and casting gold alloy Galvanic corrosion of samples after casting was shown to have similar contact current density 3. Crevice corrosion behavior of samples ; Crevice corrosion resistance of casting sample using gold coping was lower than that of cast-ing sample using gold/plastic coping, and a severe corrosion pattern was observed at the abutment-casting gold alloy interface by the SEM.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.8
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• pp.59-63
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• 2015

This paper discusses the capacitance-voltage method in Metal-Oxide-Nitride-Oxide-Silicon (MONOS) devices to analyzed the characteristics of the top oxide/nitride, nitride/bottom oxide interface trap distribution. In the CV method, nitride trap density can be calculated based on the program characteristics of the nitride thickness variations. By applying this method, silicon rich nitride device found to have a larger trap density than stoichiometric nitride device. This result is consistent with previous studies. If this comparison analysis can be expected to result in improved reliability of the SONOS flash memory.