• Journal of the Korean Ceramic Society
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• v.31 no.3
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• pp.321-329
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• 1994

Functionally gradient materials(FGM), which have the continuous or stepwise variation in a composition and microstructure, are being noticed as the material that solves problems caused by heterogeneous interface of coating or joining. And these materials also expect new functions occured by gradient composition itself. Therefore, to examine possibility of thermal barrier materials, TZP/Mo·FGM and TZP/Ni·FGM were fabricated by sintering method. As to the sintered specimens, sintering shrinkage, relative density and Vicker's hardness in each composition were examined. The phenomena due to the difference of sintering shrinkage velocity during sintering process and the thermal stress induced through differences of thermal expansion coefficient in FGM were discussed. And the structure changes at interface and microsturcture of FGM were investigated. As a results, the difference of shrinkage between ceramic and metal was about 14% in TZP/Mo and 7% in TZP/Ni. The relative density and hardness were considerably influenced by metal content changes. Owing to unbalance of sintering shrinkage velocity between ceramic and metal, various sintering defects were occured. To control these sintering defects and thermal stress, gradient composition of FGM should be narrow. The microstructure changes of FGM depended on the ceramic or metal volume percents and were analogous to the theoretical design.

• Korean Membrane Journal
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• v.10 no.1
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• pp.46-52
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• 2008

Optimization of ionomer solution was conducted in order to improve the performance of MEAs in PEMPC. The interface between membrane and electrodes in MEAs is crucial region determining fuel cell performance as well as ORR reaction at cathode. Through the modification of Nafion ionomer content at the interface between membrane and electrodes, an optimal content was obtained with Nafion 115 membranes. Two times higher current density was obtained with the outer Nafion sprayed MEA compared with the non-sprayed one. In addition, the symmetrical impedance spectroscopy mode (SM) exhibited that the resistances of membrane area, proton hydration, and charge transfer decreased as the outer Nafion is sprayed. From the polarization curves and SM, the highest current density and the lowest resistance was obtained at the outer ionomer content of $0.15\;mg\;cm^{-2}$.

• Journal of the Korean Ceramic Society
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• v.55 no.5
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• pp.407-418
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• 2018

Increasing demand for portable and wireless electronic devices with high power and energy densities has inspired global research to investigate, in lieu of scarce rare-earth and expensive ruthenium oxide-like materials, abundant, cheap, easily producible, and chemically stable electrode materials. Several potential electrode materials, including carbon-based materials, metal oxides, metal chalcogenides, layered metal double hydroxides, metal nitrides, metal phosphides, and metal chlorides with above requirements, have been effectively and efficiently applied in electrochemical supercapacitor energy storage devices. The synthesis of self-grown, or in-situ, nanostructured electrode materials using chemical processes is well-known, wherein the base material itself produces the required phase of the product with a unique morphology, high surface area, and moderate electrical conductivity. This comprehensive review provides in-depth information on the use of self-grown electrode materials of different morphologies in electrochemical supercapacitor applications. The present limitations and future prospects, from an industrial application perspectives, of self-grown electrode materials in enhancing energy storage capacity are briefly elaborated.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1646-1648
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• 2000

This paper investigated structural and electrical properties of $Y_{2}O_3$ as a buffer layer of sin91r transistor FRAM (ferroelectric RAM). $Y_{2}O_3$ buffer layers were deposited at a low substrate temperature below 400$^{\circ}C$ and then RTA (rapid thermal anneal) treated. Investigated parameters are substrate temperature, $O_2$ partial pressure, post- annealing temperature, and suppression of interfacial $SiO_2$ layer generation. for a well-fabricated sample, we achieved that leakage current density ($J_{leak}$) in the order of $10^{-7}A/cm2$, breakdown electric field ($E_{br}$) about 2 MV/cm for $Y_{2}O_3$ film. Capacitance versus voltage analysis illustrated dielectric constants of 7.47. We successfully achieved an interface state density of $Y_{2}O_3$/Si as low as $8.72{\times}10^{10}cm^{-2}eV^{-1}$. The low interface states were obtained from very low lattice mismatch less than 1.75%.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.379-379
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• 2010

Recent technical advances in OLEDs (organic light emitting devices) requires more and more the improvement in low operation voltage, long lifetime, and high luminance efficiency. Inverted top emission OLEDs (ITOLED) appeared to overcome these problems. This evolved to operate better luminance efficiency from conventional OLEDs. First, it has large open area so to be brighter than conventional OLEDs. Also easy integration is possible with Si-based driving circuits for active matrix OLED. But, a proper buffer layer for carrier injection is needed in order to get a good performance. The buffer layer protects underlying organic materials against destructive particles during the electrode deposition and improves their charge transport efficiency by reducing the charge injection barrier. Hexaazatriphenylene-hexacarbonitrile (HAT-CN), a discoid organic molecule, has been used successfully in tandem OLEDs due to its high workfunction more than 6.1 eV. And it has the lowest unoccupied molecular orbital (LUMO) level near to Fermi level. So it plays like a strong electron acceptor. In this experiment, we measured energy level alignment and hole current density on inverted OLED structures for hole injection. The normal film structure of Al/NPB/ITO showed bad characteristics while the HAT-CN insertion between Al and NPB greatly improved hole current density. The behavior can be explained by charge generation at the HAT-CN/NPB interface and gap state formation at Al/HAT-CN interface, respectively. This result indicates that a proper organic buffer layer can be successfully utilized to enhance hole injection efficiency even with low work function Al anode.

• Journal of IKEEE
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• v.23 no.2
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• pp.375-379
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• 2019

$ZnO-SnO_2(ZTO)$ was deposited by RF magnetron sputtering using a ceramic target whose Zn atomic ratio to Sn is 2:1 as a target, and the crystal structure variation with thermal treats was investigated. Transparent thin film transistors (TTFT) were fabricated using the ZTO films as active layers. About 100 nm-thick $Si_3N_4$ film grown on 100 nm-thick $SiO_2$ film was adopted as gate dielectrics. The mobility, threshold voltage, $I_{on}/I_{off}$, and interface trap density were obtained from the transfer characteristics of ZTO TTFTs. The effects of substrate temperature, and post-annealing on the property variation of ZTO TTFT were analyzed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.6
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• pp.412-417
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• 2000

High electric field stressed trap distributions were investigated in the thin silicon oxide of polycrystalline silicon gate metal oxide semiconductor capacitors. The transient currents associated with the off time of stressed voltage were used to measure the density and distribution of high voltage stress induced traps. The transient currents were due to the discharging of traps generated by high stress voltage in the silicon oxides. The trap distributions were relatively uniform near both cathode and anode interface in polycrystalline silicon gate metal oxide semiconductor devices. The stress generated trap distributions were relatively uniform the order of $10^{11}$~$10^{12}$ [states/eV/$\textrm{cm}^2$] after a stress. The trap densities at the oxide silicon interface after high stress voltages were in the $10^{10}$~$10^{13}$ [states/eV/$\textrm{cm}^2$]. It was appeared that the transient current that flowed when the stress voltages were applied to the oxide was caused by carriers tunneling through the silicon oxide by the high voltage stress generated traps.

• Nuclear Engineering and Technology
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• v.55 no.3
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• pp.895-901
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• 2023

Oxide-dispersion- strengthened nickel alloys with Hf additions are expected to present high temperature mechanical properties and durable helium resistance based on first-principles density functional theory (DFT) calculations. Energetic and charge density evaluations of the helium behaviors were performed in Ni matrix, Y₂Hf₂O₇ oxide and the oxide/matrix interface. With the presence of coherent Y₂Hf₂O₇ in Ni matrix, chances of helium bubbles in Ni can be greatly diminished. The helium atoms shall occupy the interfacial site initially, then diffuse into in the octahedral sites of Y₂Hf₂O₇, and these oxide-captured He atoms prefer to separate individually. Much higher diffusion barrier of He in Y₂Hf₂O₇ than in nickel is related to the strong hybridization between interstitial He-1s and nearest-neighboring O-2p orbitals.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.36 no.5
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• pp.819-830
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• 2016

Hydrodynamic characteristics of wave propagation through density stratification have not been identified in details. So this study conducted a numerical simulation using LES-WASS-3D ver. 2.0 for analysis of density current due to water temperature and salinity in order to analyze hydraulic characteristics under wave action in a two-layer density stratified fluid. For the validity and effectiveness of numerical wave tank used, it was compared and analyzed with the experiment to show waveform based on $3^{rd}$-order Stoke wave theory at the internal of a density stratification. Using the results obtained from numerical simulation, the surface and internal wave heights are reduced as the wave propagates in a two-layer density stratified water. And the surface or internal wave attenuation became more serious as the vorticities were increased by the velocity difference of wave propagation due to the upper-lower density difference around the interface of a density stratification. As well, the surface and internal wave attenuations became more serious with higher density difference and depth ratio between upper and lower layers when the wave propagates through a density stratification.

• Proceedings of the Computational Structural Engineering Institute Conference
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• 2005.04a
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• pp.232-239
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• 2005

The objective of this study is to evaluate the simulated effects of axial and off-axial vertical loads at the implant/bone interface and the stress distribution according to the bone density of a single-unit dental implant in the cylinder and square thread implants by 3D FEA The implants were placed in the mandibular model with 25mm in height, 15mm in width and 20mm in length; then the mandibular bone density was classified into the bone type : I, II III and IV. In addition, the force were applied into 0mm, 2mm, 4mm away from the center of the implants.