• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.4
• /
• pp.373-377
• /
• 2004

We have investigated the electrical characterization of metal-oxide-semiconductor (MOS) capacitors formed on the inductively coupled plasma (ICP) etch-damaged both n- and p-type 4H-SiC. We found that there was an effect of a sacrificial oxidation treatment on the etch-damaged surfaces. Current-voltage and capacitance-voltage measurements of these MOS capacitors were used and referenced to those of prepared control samples without etch damage. It has been found that a sacrificial oxidation treatment can improve the electrical characteristics of MOS capacitors on etch-damaged 4H-SiC since the effective interface density and fixed oxide charges of etch-damaged samples have been found to increase while the breakdown field strength of the oxide decreased and the barrier height at the SiC-SiO$_2$ interface decreased for MOS capacitors on etch-damaged surfaces.

• Journal of computational fluids engineering
• /
• v.12 no.4
• /
• pp.20-27
• /
• 2007

Two-dimensional stagnation flow toward a plane wall coated with magnetic fluid of uniform thickness is investigated. The flow field is represented as a similarity solution of the Navier-Stokes equation for this incompressible laminar flow. The resulting third order ordinary differential equation is solved numerically by using the shooting method and by determining two shooting parameters so as to satisfy the boundary and interface conditions. Features of the flow including streamline patterns are investigated for the varying values of density ratio, viscosity ratio, and Reynolds number. An adverse flow with double eddy pair in magnetic fluid region is found to emerge as the Reynolds number becomes higher than a threshold value. The results for the interface velocity, interface and wall shear stress, and boundary layer and displacement thickness are also presented.

• Proceedings of the KSME Conference
• /
• 2004.04a
• /
• pp.1558-1563
• /
• 2004

This work applies the nonequilibrium molecular dynamics simulation method to study a Lennard-Jones liquid thin film suspended in the vapor and calculates the thermal conductivity by linear response function. As a preliminary test, the thermal conductivity of pure argon fluid are calculated by nonequilibrium molecular dynamics simulation. It is found that the thermal conductivity decrease with decreasing the density. When both argon liquid and vapor phase are present, the effects of the system temperature on the thermal conductivity are investigated. It can be seen that the thermal conductivity of liquid-vapor interface is constant with increasing the temperature

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.62 no.9
• /
• pp.1343-1347
• /
• 2013

This paper presents an analysis methods for current collection quality in catenary system by means of video image based monitoring system. Arcing is the sparking at the interface point between pantograph and contact wire when the electric trains have traction current values at speed. Percentage of arcing at maximum line speed is measurable parameters for compliance with the requirements on dynamic behaviour of the interface between pantograph and contact wire in accordance with requirement of IEC and EN standards. The arc detector and video is installed on a train aim at the trailing contact strip according to the travel direction. The arc detector presented and measured verity of value such as the duration and power density of each arc and the video image is measured a image when the arc is occurred in pantograph. In this paper we analysis of video image in accordance with power density of arcing from arc detector and compared with video image and power density of arcing so as to produce quality of arcing from image.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.11
• /
• pp.900-904
• /
• 2011

In this paper, we investigated an anomalous hump phenomenon under the positive bias stress in p-type LTPS TFTs. The devices with inferior electrical performance also show larger hump phenomenon. which can be explained by the sub-channel induced from trapped electrons under thinner gate oxide region. We can confirm that the devices with larger hump have larger interface trap density ($D_{it}$) and grain boundary trap density ($N_{trap}$) extracted by low-high frequency capacitance method and Levinson-Proano method, respectively. From the C-V with I-V transfer characteristics, the trapped electrons causing hump seem to be generated particularly from the S/D and gate overlapped region. Based on these analysis, the major cause of an anomalous hump phenomenon under the positive bias stress in p-type poly-Si TFTs is explained by the GIDL occurring in the S/D and gate overlapped region and the traps existing in the channel edge region where the gate oxide becomes thinner, which can be inferred by the fact that the magnitude of the hump is dependent on the average trap densities.

• Journal of Adhesion and Interface
• /
• v.24 no.3
• /
• pp.86-94
• /
• 2023

To fabricate all-solution-processed flexible Organic Light-Emitting Diodes (OLEDs), we demonstrated a bonding technology using a polyethyleneimine (PEI) as an adhesion layer between the two substrates. As the adhesion layer requires not only a high adhesion strength, but also a high current density, we have tried to find out the optimum condition which meets the two requirements at the same time by changing experimental factors such as PEI concentration, thickness of the layer and by mixing some additives into the PEI. The adhesion strength and the electrical current density were investigated by tensile tests and electron only device (EOD) experiments, respectively. The results showed that at higher PEI concentration the adhesion strength showed higher value, but the electrical current through the PEI layer decreased rapidly due to the increased PEI layer thickness. We added Sorbitol and PolyEthyleneGlycohol (PEG) into the 0.1 wt% PEI solution to enhance the adhesion and electrical properties. With the addition of the 0.5 wt% PEG into the 0.1 wt% PEI solution, the device showed an electrical current density of 900 mA/cm² and a good adhesion characteristic also. These data demonstrated the possibility of fabricating all-solution-processed OLEDs using two-substrate bonding technology with the PEI layer as an adhesion layer.

• Journal of the Korean Magnetics Society
• /
• v.22 no.5
• /
• pp.157-161
• /
• 2012

Magnetism at the interfaces of rocksalt structured half-metals, NaN and CaN were investigated by use of the first-principles band calculations. The electronic structures for the simple interface and mixed interface systems were calculated by the FLAPW (full-potential linearized augmented plane wave) method. From the calculated number of electrons in muffin-tin spheres of each atom, we found, for the simple interface system, that the magnetic moment of the N atom in the CaN (NaN) side is increased (decreased) compared to those of inner N atoms. For the mixed interface system, the magnetic moments of the interface N atoms are similar to the averaged value for the inner N atoms in CaN and NaN side. Among four interface N atoms, the N atom connected to Na atoms in the upper and down layers has the largest magnetic moment and that connected to Ca atoms has the smallest. The number of p electrons in each N atom and the calculated density of states explain well the above situation.

• Journal of the Microelectronics and Packaging Society
• /
• v.30 no.4
• /
• pp.32-43
• /
• 2023

Resistive Random Access Memory (RRAM), based on resistive switching characteristics, is emerging as a next-generation memory device capable of efficiently processing large amounts of data through its fast operation speed, simple device structure, and high-density implementation. Interface type resistive switching offer the advantage of low operation currents without the need for a forming process. Especially, for RRAM devices based on transition metal oxides, various studies are underway to enhance the memory characteristics, including precise material composition control and improving the reliability and stability of the device. In this paper, we introduce various methods, such as doping of heterogeneous elements, formation of multilayer films, chemical composition adjustment, and surface treatment to prevent degradation of interface type resistive switching properties and enhance the device characteristics. Through these approaches, we propose the feasibility of implementing high-efficient next-generation non-volatile memory devices based on improved resistive switching properties.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.32 no.5
• /
• pp.387-395
• /
• 2008

Stress distribution and interfacial debonding process at the interface between a rubber mold and a powder compact were analyzed during unloading under cold isostatic pressing. The Cap model proposed by Lee and Kim was used for densification behavior of powder based on the parameters involved in the yield function of general Cap model and volumetric strain evolution. Cohesive elements incorporating a bilinear cohesive zone model were also used to simulate interfacial debonding process. The Cap model and the cohesive zone model were implemented into a finite element program (ABAQUS). Densification behavior of powder was investigated under various interface conditions between a rubber mold and a powder compact during loading. The residual tensile stress at the interface was investigated for rubber molds with various elastic moduli under perfect bonding condition. The variations of the elastic energy density of a rubber mold and the maximum principal stress of a powder compact were calculated for several interfacial strengths at the interface during unloading.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.72-72
• /
• 2010

Recent development of organic solar cell approaches the level of 8% power conversion efficiency by the introduction of new materials, improved material engineering, and more sophisticated device structures. As for interface engineering, various interlayer materials such as LiF, CaO, NaF, and KF have been utilized between Al electrode and active layer. Those materials lower the work function of cathode and interface barrier, protect the active layer, enhance charge collection efficiency, and induce active layer doping. However, the addition of another step of thin layer deposition could be a little complicated. Thus, on a typical solar cell structure of Al/P3HT:PCBM/PEDOT:PSS/ITO glass, we used Li:Al alloy electrode instead of Al to render a simple process. J-V measurement under dark and light illumination on the polymer solar cell using Li:Al cathode shows the improvement in electric properties such as decrease in leakage current and series resistance, and increase in circuit current density. This effective charge collection and electron transport correspond to lowered energy barrier for electron transport at the interface, which is measured by ultraviolet photoelectron spectroscopy. Indeed, through the measurement of secondary ion mass spectroscopy, the Li atoms turn out to be located mainly at the interface between polymer and Al metal. In addition, the chemical reaction between polymer and metal electrodes are measured by X-ray photoelectron spectroscopy.