• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.8
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• pp.1187-1196
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• 1989

In this paper, a method for computing the capacitance parameter for a multi-interconnection line in a multilayered dielectric region is presented. The number of interconnection lines and the number of dielectric layers are arbitrary, and the interconnection lines are finite cross section or infinite cross section. The surface of lines and dielectric interface are divided into subsection. The surface charge density of each subsection is a constant step-pulse function for each subsection. After the solution of surface charge density is effected by the method of moments, capacitance parameter is calculated.

• Nuclear Engineering and Technology
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• v.56 no.7
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• pp.2563-2569
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• 2024

The monochromatic hyperbolic neutron density wave is conceived as a Rayleigh-like wave with mixed transverse and longitudinal components. It is proved for the first time that the absolute ratio of the longitudinal to transverse interfering components, varies, with increasing the frequency of this wave, from zero to 1. Such a limited variation is to be coined as vibrational enhancement of evolutionary one-speed neutron transport.

• Journal of the Korean Vacuum Society
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• v.18 no.1
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• pp.9-14
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• 2009

We calculated tetragonal-$HfO_2$/Si superstructures using density functional theory. When a and b-axes of cubic-$HfO_2$ were increased to be matched with those of Si for epitaxy contact, c-axis was decreased by 2%. Eight models of interface layers were produced by choosing different terminating layers of tetragonal-$HfO_2$ and Si substrate at the interface. It was found that tetragonal-$HfO_2$ $(004)_{1/4}$/Si $(004)_{3/4}$ superstructure was the most favorable and tetragonal-$HfO_2$ (004)$_{1/4}$/Si (002) superstructure was the most unfavorable. In tetragonal-$HfO_2$ $(004)_{1/4}$/Si (002) superstructure, there were two oxygen vacancies in tetragonal-$HfO_2$ as two oxygen atoms were moved to Si substrate located at the interface.

• Journal of the Society of Naval Architects of Korea
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• v.39 no.1
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• pp.16-27
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• 2002

A level-set method is used for analyzing the behaviors of gas bubbles in two fluids incompressible viscous flow domain. The governing equations are solved by using a finite volume method. The numerical results are verified by comparing with the experimental and other computational results. Computations for the deformations and motions of one or multi-bubbles in the flow domain with the initial undisturbed free interface are conducted. It can be seen that numerical results for different surface tension and density ratio arise very different behaviors of bubbles. When bubbles rise near the free interface, the free interface gives some great influence on the behaviors of bubbles. The present results computed by a level-set method give useful information about the properties of bubble motions and deformations.

• The Journal of the Korea Contents Association
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• v.11 no.11
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• pp.79-90
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• 2011

The purpose of this study is to explore physical factor of digital text structure for designing e-Book interface and to develop prototype of e-Book interface by applied these factors. To address this goal, explore factor analysis and confirmatory factor analysis were employed, 237 university students were the participated in this study. According to a result, 29 items for physical feature of digital text structure were developed, 9 factors of digital text structure were also extracted; volume, depth, density, space, layout, format, signal, size, and length. Besides, to identify structure of pre-defined 9 factors, confirmatory factor analysis was conducted. As a result of CFA, the factor structure was supported by all of model fit indices.

• The Journal of Korean Academy of Prosthodontics
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• v.35 no.4
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• pp.627-646
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• 1997

In order to find the degree of osseointegration at bone-implant interface of clinically successful implants, models including the 3.75mm wide, 10mm long screw type $Br{\aa}nemark$ implant as a standard and cylinder, 15mm long, 5.0mm wide, two splinted implants, and implants installed in various cancellous bone density were designed. Also, the amount of load and material of prostheses were changed. The stress and minimum contact fraction were analyzed on each model using three-dimensional finite element method(I-DEAS and ABAQUS version 5.5). The results of this study were as follows. 1. 10mm long, 3.75mm diameter-screw type implant had $36.5{\sim}43.7%$ of minimum contact fraction. 2. Cylinder type implant showed inferior stress distribution and higher minimum contact fraction than screw type. 3. As implant length was increased, minimum contact fraction was increased a little, however, maximum principal stress was decreased. 4. Implants with a large diameter had lower stress value with slightly higher minimum contact fraction than standard screw type. 5. Two splinted implants showed no change of minimum contact fraction. 6. The higher bone density, the lower stress value. 7. The material of occlusal surface had no effect on the stress of the bone-implant interface.

• Korean Journal of Materials Research
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• v.12 no.9
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• pp.724-728
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• 2002

Inductively-coupled $N_2$O plasma was utilized to grow silicon dioxide at low temperature and applied to fabricate polycrystalline-silicon thin film transistors. At $400^{\circ}C$, the thickness of oxide was limited to 5nm and the oxide contained Si≡N and ≡Si-N-Si≡ bonds. The nitrogen incorporation improved breakdown field to 10MV/cm and reduced the interface charge density to $1.52$\times$10^{11}$ $cm^2$ with negative charge. The $N_2$O plasma gate oxide enhanced the field effect mobility of polycrystalline thin film transistor, compared to $O_2$ plasma gate oxide, due to the reduced interface charge at the $Si/SiO_2$ interface and also due to the reduced trap density at Si grain boundaries by nitrogen passivation.

• Geomechanics and Engineering
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• v.14 no.4
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• pp.387-398
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• 2018

The present study evaluates the interface shear strength between sand and different construction materials, namely steel and concrete, using direct shear test apparatus. The influence of surface roughness, mean size of sand particles, relative density of sand and size of the direct shear box on the interface shear behavior of sand with steel and concrete has been investigated. Test results show that the surface roughness of the construction materials significantly influences the interface shear strength. The peak and residual interface friction angles increase rapidly up to a particular value of surface roughness (critical surface roughness), beyond which the effect becomes negligible. At critical surface roughness, the peak and residual friction angles of the interfaces are 85-92% of the peak and residual internal friction angles of the sand. The particle size of sand (for morphologically identical sands) significantly influences the value of critical surface roughness. For the different roughness considered in the present study, both the peak and residual interaction coefficients lie in the range of 0.3-1. Moreover, the peak and residual interaction coefficients for all the interfaces considered are nearly identical, irrespective of the size of the direct shear box. The constitutive modeling of different interfaces followed the experimental investigation and it successfully predicted the pre-peak, peak and post peak interface shear response with reasonable accuracy. Moreover, the predicted stress-displacement relationship of different interfaces is in good agreement with the experimental results. The findings of the present study may also be applicable to other non-yielding interfaces having a similar range of roughness and sand properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.6
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• pp.436-439
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• 2010

SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. In this work, we report the effect of the interface states ($Q_f$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized by using a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. When the $SiO_2$/SiC interface charge decreases, power losses and switching time also decrease, primarily due to the lowered channel mobilities. High density interface states can result in increased carrier trapping, or more recombination centers or scattering sites. Therefore, the quality of $SiO_2$/SiC interfaces has a important effect on both the static and transient properties of SiC MOSFET devices.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1108-1111
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• 1999

The Peltier heat absorbed or evolved at the solidiliquid interface in the unidirectional solidification process could contribute to the increase of temperature gradient in liquid and growth velocity, and the enhancement of crystal orientation. In this study, in order to measure the Peltier heat generated at the solidiliquid interface as a way of application to crystal growth, the thermoelectric effects were investigated on the temperature changes at the solid- and liquid-phase of the same material and its interface. Through the theoretical consideration, it was possible to separate sole Peltier. Thomson or Joule heat from the temperature changes due to current density, polarity, and temperature gradient. Thomson coefficient of solid- and liquid-phase as well as Peltier coefficient at the solid/liquid interface could be obtained.