• 대한전기학회논문지
• /
• 제44권7호
• /
• pp.901-907
• /
• 1995

The switching characteristics of As$_{10}$ Ge$_{15}$ Te$_{75}$ thin film were investigated under d.c. bias. And the frequency dependence of the conductivity was analysed with regard to the temperature dependence, in order to find the physical properties of the As$_{10}$ Ge$_{15}$ Te$_{75}$ thin film ; a characteristic relaxation time (.tau.$_{0}$ ), the spatial density of defect states (N), and the localized wavefunction (.alpha.$^{-1}$ ). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively. The threshold voltage is increased as the thickness and the electrode distance is increased, while the threshold voltage is decreased in proportion to the increased annealing time and temperature.

• 한국세라믹학회지
• /
• 제54권2호
• /
• pp.102-107
• /
• 2017

The dependence of the IR optical properties of PMMA/$Al_2O_3$ nanocomposite on the alumina content was investigated in the wavelength range of $3500-2800cm^{-1}$. The samples were prepared via emulsion polymerization technique using oleic acid as a coupling agent. Grafting density calculations were carried out by means of elemental analysis CHN to yield the best coupling agent content. FTIR analysis confirmed the existence of a chemical bond between aluminum oxide and oleic acid. The outcomes of XRD analyses showed the presence of cubic gamma aluminum oxide in the nanocomposite, in contrast to the amorphous nature of PMMA. TEM images showed the core-shell morphology of the particles other than pristine PMMA. Optical constants of the nanocomposite were calculated based on FTIR spectra and the Kramers-Kronig equations. The presence of nano alumina modified some of the optical indexes in IR region.

• Bulletin of the Korean Chemical Society
• /
• 제30권4호
• /
• pp.902-906
• /
• 2009

It is found that that the coating N-acetyl cysteine (NAC) on gold surfaces may be used to design the distribution of either gold particle adsorbed to the $TiO_2$ surface or vice versa by adjusting the electrostatic interactions. In this study, we investigated electrostatic properties of the NAC-coated-gold surface and the $TiO_2$ surface. The surface forces between the surfaces were measured as a function of the salt concentration and pH value using the AFM. By applying the Derjaguin-Landau-Verwey-Overbeek (DLVO) theory to the surface forces, the surface potential and charge density of the surfaces were quantitatively acquired for each salt concentration and each pH value. The surface potential and charge density dependence on the salt concentration was explained with the law of mass action, and the pH dependence was with the ionizable groups on the surface.

• 전기의세계
• /
• 제28권9호
• /
• pp.43-50
• /
• 1979

Silicon nitride films were chemically deposited on silicon substrates by reacting SiCl$_{4}$ and NH$_{3}$ in a nitrogen atmosphere at 700~1100 .deg.C. The deposition rate increased rapidly with deposition temperature upto about 1000 .deg.C, and became less temperature dependent above this temperature. The etch rate of films in buffered HF solution decreased, with an increase of deposition temperature, and a heat treatment at a temperature higher than that of the deposition considerably reduced the etch rate. It indicates that the heat treatment resulted in a densification of the films. Surface charge density of 3~4 * 10$^{11}$ /cm$^{2}$ was determined from the C-V characteristics of MNS diode, and it was also found that surface charge density depended on deposition temperature, but not film thickness. The current-voltage characteristics displayed a logI-V$^{1}$2/ dependence in the temperature range of 300~500.deg.K. Measurement of the slope of this characteristics and its dependence on temperature and bias polarity suggest that conduction in sili con nitride films arises from the Poole-Frenkel mechanism.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 하계학술대회 논문집
• /
• pp.29-32
• /
• 2000

In this paper, an analytical model for I-V characteristics of a HEMTs is Proposed. The developed model takes into account the temperature dependence of drain current. In high-speed ICs for optical communication systems and mobile communication systems, temperature variation affects performance; for example the gain, efficiency in analog circuits and the delay time, power consumption and noise mrgin in digital circuits. To design such a circuit taking into account the temperature dependence of the current-voltage characteristic is indispensible. This model based on the analytical relation between surface carrier density and Fermi potential including temperature dependent coefficients.

• 천문학회보
• /
• 제36권1호
• /
• pp.58.2-58.2
• /
• 2011

Park, Gott, & Choi (2008) found that when a galaxy is located within the virial radius from its closest neighbor and the neighbor is an elliptical, the probability of the galaxy to be an elliptical is very sensitive to the large-scale background density over a few Mpc scales. They suggested that the large-scale dependence can be arise if the temperature of a diffuse hot gas held by elliptical galaxies are higher in higher density environment. In this study, to understand the large-scale environment affects the X-ray properties of individual galaxies, we investigated the dependence of the X-ray luminosities of the elliptical galaxies on the large-scale environment using X-ray and optical data which we selected from the ROSAT All-Sky Survey and the Sloan Digital Sky Survey Data Release 7. To exclude galaxies embedded in an intra-group/cluster medium which could enhance their observed X-ray luminosity, we used isolated elliptical galaxies.

• Bulletin of the Korean Chemical Society
• /
• 제14권2호
• /
• pp.225-234
• /
• 1993

As an application of the cluster orbitals proposed previously, nickel-, palladium-, and platinum-hydrogen systems are studied. Density of states, projected density of states, HOMO levels, and stabilization energies are calculated and compared with those obtained by extended Huckel method for small clusters. These calculations are extended to large clusters to find the size dependence of several physical quantities. Reduced overlap populations are also calculated to clarify the charge transfer phenomena reported earlier. The calculated physical quantities show no dependence on the cluster size. It is also found that the charge transfer occurs due to the intrinsic character of palladium, not due to the edge effect which may be present in small clusters.

• 한국의학물리학회:학술대회논문집
• /
• 한국의학물리학회 2002년도 Proceedings
• /
• pp.94-96
• /
• 2002

In order to achieve the radiotherapy more precisely using highly energetic heavy charged particles, it is important to know the distribution of the electron density in a human body, which is highly related to the range of charged particles. We can directly obtain the 2-D distribution of the electron density in a sample from a heavy ion CT image. For this purpose, we have developed a heavy ion CT system using a broad beam. The performance, especially the position resolution, of this system is estimated in this work. All experiments were carried out using the heavy ion beam from the HIMAC. We have obtained the projection data of polyethylene samples with various sizes using He 150 MeV/u, C 290 MeV/u and Ne 400 MeV/u beams. The used targets are the cylinders of 40, 60 and 80 mm in diameter, each of them has a hole of 10 mm in diameter at the center of it. The dependence of the spatial resolution on the target size and the kinds of beams will be discussed.

• 한국화재소방학회논문지
• /
• 제14권1호
• /
• pp.1-7
• /
• 2000

절연재료의 내부에서 부분방전이 발생하면 국부파괴와 완전절연파괴의 원인이 된다. 부분방전으로 생기는 트리잉은 절연재료를 열화시키고 절연 수명을 단축시키는 중요한 원인이 된다. 따라서 절연파괴의 예측과 절연재료의 수명을 진단할 수 있는 방법에 대한 연구는 매우 중요하다. 고전압 하에서 일어나는 트리잉 현상에 대해서 저밀도 폴리에틸렌의 트리잉 개시 전압과 그 진전 과정을 진성파괴의 견해에서 고찰하였다. 이러한 관점에서 본 연구는 고전압하에서 일어나는 트리잉현상에 대해서 저밀도폴리에틸렌에서 트리형상의 전계의존성에 관하여 고찰하였다. 결과로서 트리의 성장을 그 내부가 각각 유전체 혹은 도체라고 가정했을 때의 중간적인 특성을 갖는다는 추리하에 이론적으로 검토한 결과, 실험결과와도 잘 일치됨을 알 수 있었다.

• 한국전기전자재료학회논문지
• /
• 제21권9호
• /
• pp.848-852
• /
• 2008

Characteristics of microcrystalline-silicon thin-films deposited by plasma-enhanced chemical-vapor deposition (PECVD) method were studied. There were optimum values of RF power density and $H_2$ dilution ratio $(H_2/(SiH_4+H_2))$; maximum grain size of about 35 nm was obtained at substrate temperature of 250 $^{\circ}C$ with RF power density of 1.1 W/$cm^2$ and $H_2$ dilution ratio of 0.91. Larger grain was obtained with higher substrate temperature up to 350 $^{\circ}C$. Grain size dependence on RF power density and $H_2$ dilution ratio could be explained by etching effects of hydrogen ions and changes of species of reactive precursors on growing surface. Surface-mobility activation of reactive precursors by temperature could be a reason of grain-size dependence on the substrate temperature. Microcrystalline-silicon thin-films that could be used for flat-panel electronics such as active-matrix organic-light-emitting-diodes are expected to be fabricated successfully using these results.