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A Study on Characteristics of Microcrystalline-silicon Films Fabricated by PECVD Method

플라즈마 화학증착법으로 제작한 미세결정질 실리콘 박막 특성에 관한 연구

  • 이호년 (순천향대학교 전자정보공학과) ;
  • 이종하 (순천향대학교 전자정보공학과) ;
  • 이병욱 (순천향대학교 전자정보공학과) ;
  • 김창교 (순천향대학교 전자정보공학과)
  • Published : 2008.09.01

Abstract

Characteristics of microcrystalline-silicon thin-films deposited by plasma-enhanced chemical-vapor deposition (PECVD) method were studied. There were optimum values of RF power density and $H_2$ dilution ratio $(H_2/(SiH_4+H_2))$; maximum grain size of about 35 nm was obtained at substrate temperature of 250 $^{\circ}C$ with RF power density of 1.1 W/$cm^2$ and $H_2$ dilution ratio of 0.91. Larger grain was obtained with higher substrate temperature up to 350 $^{\circ}C$. Grain size dependence on RF power density and $H_2$ dilution ratio could be explained by etching effects of hydrogen ions and changes of species of reactive precursors on growing surface. Surface-mobility activation of reactive precursors by temperature could be a reason of grain-size dependence on the substrate temperature. Microcrystalline-silicon thin-films that could be used for flat-panel electronics such as active-matrix organic-light-emitting-diodes are expected to be fabricated successfully using these results.

Keywords

References

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