• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.3
• /
• pp.18-27
• /
• 1998

Molecular dynamicsinvestigations of ion implantation considering point defect generation were performed with ion energies in the range of ~1keV, Simulation starts perfect diamond cubic lattice site. Stillinger-Weber potential and ZBL potential were used to calculate forces between atoms. We have simulated slowing-down of ion velocity, ion trajectory and coupled-coing between ion and silicon. We also discussed distribution of point defect using rdial distribution function. We found that interstitial produced by ion bombardment mainly formed interstitial cluster.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.11 no.6
• /
• pp.259-263
• /
• 2001

The continuum model of transient point defect dynamics to predict the concentrations of interstitial and vacancy is established by estimating expressions for the thermophysical properties of intrinsic point defects. And the point defect distribution in a Czochralski-grown 200 mm silicon crystal and the location of oxidation-induced stacking fault ring(OiSF-ring) created during the cooling of crystals are calculated by using the numerical analysis. The purpose of this paper is to show that his approach lead to predictions that are consistent with experimental results. Predicted point defect distributions by transient point defect dynamic analysis are in good qualitative agreement with experimental data under widely and abruptly varying crystal pull rates when correlated with the position of the OiSF-ring .

• 한국연소학회:학술대회논문집
• /
• 2005.10a
• /
• pp.328-336
• /
• 2005

Effects of surface defect distribution on flame instability during flame-surface interaction are experimentally investigated. To examine the chemical quenching phenomenon, we prepared thermally grown silicon oxide plates with well-defined defect density. Ion implantation was used to control the number of defects, i.e. oxygen vacancies. In an attempt to preferentially remove the oxygen atoms from silicon dioxide surface, argon ions with low energy level from 3keV to 5keV were irradiated at the incident angle of $60^{\circ}C$. Compositional and structural modification of $SiO_2$ induced by low-energy $Ar^+$ ion irradiation has been characterized by Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS). The analysis shows that as the ion energy increases, the number of structural defect also increases and non-stoichiometric condition of $SiO_x(x{\le}2)$ plates is enhanced. From the quenching distance measurements, we found out that when the surface temperature is under $300^{\circ}C$, the quenching distance decreases on account of reduced heat loss; as the surface temperature increases over $300^{\circ}C$, however, quenching distance increases despite reduced heat loss effect. Such aberrant behavior is caused by heterogeneous chemical reaction between active radicals and surface defect sites. The higher defect density, the larger quenching distance. This results means that chemical quenching is governed by radical adsorption and can be parameterized by the oxygen vacancy density on the surface.

• Journal of Korean Institute of Industrial Engineers
• /
• v.21 no.3
• /
• pp.371-385
• /
• 1995

The yield of semiconductor chips is dependent not only on the average defect density but also on the distribution of defects over a wafer. The distribution of defects leads to consider a cluster index. This paper briefly reviews the existing yield prediction models ad proposes a new cluster index, which utilizes the information about the defect location on a wafer in terms of the coefficient of variation. An extensive simulation is performed under a variety of defect distributions and a yield prediction model is derived through the regression analysis to relate the yield with the proposed cluster index and the average number of defects per chip. The performance of the proposed simulation-based yield prediction model is compared with that of the well-known negative binomial model.

• Journal of the Korean Society of Safety
• /
• v.14 no.3
• /
• pp.25-32
• /
• 1999

This study has been performed to investigate the stress distribution around defects that behave as stress concentrators. Besides, the effect of stress interaction effects on the initiation of primary cracks were also investigated by rotary bending fatigue tests which were performed with specimens drilled micro surface defects and the stress distribution was analyzed using Finite Element Method. In addition, the stress interaction effects around defects and cracks were investigated by comparing the results of experiments and F.E.M. The results obtained are summarized as follows ; 1) Area which slip and micro cracks initiated at micro surface defects is between the maximum shear stress points and this area is over than ${\pm}30^{\circ}$ from the maximum stress point along the defect edge. 2) The stress interaction effect for the small size defect is larger than that of large size defect when the interval between them is near 3) Interval which there is no shear stress interaction effect analyzed by F.E.M. is larger than that of experimental results.

• International Journal of Precision Engineering and Manufacturing
• /
• v.4 no.6
• /
• pp.12-19
• /
• 2003

This paper presents the effect of boundary conditions in various failure pressure models published for the estimation of failure pressure. Furthermore, this approach is extended to the failure prediction with the aid of a failure probability model. The first order Taylor series expansion of the limit state function is used in order to estimate the probability of failure associated with each corrosion defect in buried pipelines for long exposure period with unit of years. A failure probability model based on the von-Mises failure criterion is adapted. The log-normal and standard normal probability functions for varying random variables are adapted. The effects of random variables such as defect depth, pipe diameter, defect length, fluid pressure, corrosion rate, material yield stress, material ultimate tensile strength and pipe thickness on the failure probability of the buried pipelines are systematically investigated for the corrosion pipeline by using an adapted failure probability model and varying failure pressure model.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.20 no.8
• /
• pp.181-189
• /
• 2019

An aircraft power distribution device distributes and controls the power generated by the generator and provides overcurrent protection. There are many defect phenomena that make AC power distribution impossible during flight, which poses a problem in because some electronic equipment cannot be operated. We describe a process of deriving the root cause of defects by using vibration testing equipment to simulate the vibration conditions during aircraft flight, which result in defects. The results show that the cause of the defect is internal wiring damage caused by the vibration of the contactor of the AC power distribution device. Therefore, the shape of the contactor was improved to solve this problem. We also improved the test procedure by performing defect detection tests using vibration testing equipment to detect a faulty contactor. As a result of the improvements, a component certification test and flight test proved that the defect phenomena of the AC electrical master box were improved.

• Journal of Korea Multimedia Society
• /
• v.18 no.3
• /
• pp.312-322
• /
• 2015

In this paper a new defect detection method for flat panel display that does not require any separately prepared reference images and shows robustness against problems with regard to pixel tolerance and nonuniform illumination condition is proposed. In order to perform defect detection under any magnification value of camera, the proposed method automatically obtains the value of pattern interval through an image analysis. Using the information for pattern interval, an advanced PCSR-G method presented in this paper utilizes neighboring patterns as its reference images instead of utilizing any separately prepared reference images. Also this paper proposes a scheme to improve the performance of the conventional PCSR-G method by extracting and applying additional information for pixel tolerance and intensity distribution considering the value of pattern interval. Simulation results show that the performance of the proposed method utilizing pixel tolerance and intensity distribution is superior to that of the conventional method. Also, it is proved that the proposed method that is implemented using parallel technique based on GPGPU can be applied to real system.

• Korean Journal of Crystallography
• /
• v.14 no.2
• /
• pp.84-92
• /
• 2003

The fast pulling is easy to modify the distribution of grown-in defects toward fine size, which can be readily removed by additional treatment. In this experiment, The fast pulled crystals with high pulling late over 1.0 mm/min were grown and their grown-in defect distributions were investigated. In our recent developments in the growth of Cz-Si, it could be found that the cooling rate in a specific temperature range and the uniformity of temperature gradient at solid/liquid interface are more important for the formation of grown-in defect than the pulling rate itself. We analyzed these cooling rates and temperature gradients for the various fast pulled crystals and compared them to the observed formation behavior of the grown-in defects. The effective factor (Ω) for the void defect formation was introduced and it could explain the radial distribution of void defects in the fast-pulled crystals effectively.

• Journal of Distribution Science
• /
• v.17 no.4
• /
• pp.51-57
• /
• 2019

Purpose - This study aims to improve the distribution structure of the OLED market and develop cost-effective optimization techniques. Specifically, it is a study on the optimization of ferric chloride to improve the etch of SUS MASK for OLED. Research design, data, and methodology - Applying the optimal conditions of the experiment, the final confirmation was evaluated for improvement by the Process Capability Index (Cpk). It is possible to derive social performance such as improvement of precision of SUS MASK manufacturing, economic performance such as defect rate, reduction of waste generation and treatment cost, technological achievement such as SUS MASK production technology, improvement of profit structure of technology development and process improvement do. Results - The improvement of the Cpk before the improvement was made was confirmed to be 0.57% with a defect estimate of 25.07% with a failure estimate of 0.57% after the improvement, and 8.84% with a failure estimate of 0.57% level after the improvement. Conclusions - If the conclusions obtained from the specimen experiment are applied to the manufacturing process of SUS MASK, it will be possible to expect excellent cost-effective competitiveness due to the improvement of precision and reduction of defect rate to enhance the OLED market penetration.