• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.420-420
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• 2013

We investigated oxygen plasma effect on defect states near the interface of AlGaN/GaN High Electron Mobility Transistor (HEMT) structure grown on a silicon substrate. After the plasma treatment, electrical properties were evaluated using a frequency dependant Capacitance-Voltage (C-V) and a temperature dependant C-V measurements, and a deep level transient spectroscopy (DLTS) method to study the change of defect densities. In the depth profile resulted from the temperature dependant C-V, a sudden decrease in the carrier concentration for two-dimensional electron gas (2DEG) nearby 250 K was observed. In C-V measurement, the interface states were improved in case of the oxygen-plasma treated samples, whereas the interface was degraded in case of the nitrogen-plasma treated sample. In the DLTS measurement, it was observed the two kinds of defects well known in AlGaN/GaN structure grown on sapphire substrate, which have the activation energies of 0.15 eV, 0.25 eV below the conduction band. We speculate that this defect state in AlGaN/GaN on the silicon substrate is caused from the decrease in 2DEG's carrier concentrations. We compared the various DLTS signals with filling pulse times to identify the characteristics of the newly found defect. In the filling pulse time range under the 80 us, the activation energies changed as the potential barrier model. On the other hand, in the filling pulse time range above the 80 us, the activation energies changed as the extended potential model. Therefore, we suggest that the found defect in the AlGaN/GaN/Si structure could be the extended defect related with AlGa/N/GaN interface states.

• Journal of the Semiconductor & Display Technology
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• v.3 no.3
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• pp.19-21
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• 2004

This paper presents a 3-dimensional diffusion simulation with adaptive solution strategy. The developed diffusion simulator VLSIDIF-3 was designed to re-refine areas. Refine scheme was calculated by the difference of doping concentration between any of two nodes. Each element is greater than tolerance and redo diffusion process until error is tolerable. Numerical experiment in low doping diffusion problem showed that this adaptive solution strategy is very efficient in both memory and time, and expected this scheme would be more powerful in complex diffusion model.

• Journal of the Korean Ceramic Society
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• v.37 no.7
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• pp.726-729
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• 2000

The entitled report revealed that ZnO phosphor samples treated at different temperatures under a given reduction atmosphere show the radiation brightness increase with increase of temperature up to about 900$^{\circ}C$ but become decreasing beyond the temperature. The brightness deterioration with curing temperature at higher temperatures was explained by the decrease of excess zinc ions resulted from their evaporation. The comments will open possibility for different discussions on the experimental result by introducing numerical relationships between the concentration of the native defects and the curing condition.

• Composites Research
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• v.29 no.6
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• pp.388-394
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• 2016

Fiber reinforced plastic (FRP) composites have drawn increasing attentions worldwide for decades due to its outstanding properties. Stress concentration factor (SCF) as an essential parameter in materials science are critically considered in structure design and application, strength assessment and failure prediction. However, investigation of stress concentration in FRP composites has been rarely reported so far. In this study, three resource-conserving analyses (Isotropic analysis, Orthotropic analysis and Finite element analysis) were introduced to plot the $K_T^A-d/W$ curve for E-glass/epoxy composite plate with the geometrical defect of circular hole placed centrally. The plates were loaded to uniaxial direction for simplification. Finite element analysis (FEA) was carried out via ACP (ANSYS composite prepost module). Based on the least squares method, a simple expression of fitting equation could be given based on the simulated results of a set of discrete points. Finally, all three achievable solutions were presented graphically for explicit comparison. In addition, the investigation into customized efficient SCFs has also been carried out for further reference.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1229-1232
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• 2004

The ratio of optimized concentration on optical characteristics for phase-separated composite organic films (PSCOF) liquid crystal display is 30% of pre-polymer (NOA65) and 70% of ferroelectric liquid crystal (Felix). The layer structure in ferroelectric liquid crystal cell made by 30% NOA65 and 70% Felix materials is tilt-bookshelf layer structure. The angle of tilt-bookshelf structure are 17$^{\circ}$, 12$^{\circ}$ which are almost same of tilt angle of ferroelectric liquid crystal in Sm $C^{\ast}$ phase. We know that this result is from compensating the layer buckling. In this paper, we will discuss the effect of layer structure in PSCOF cell on ratio of concentration between pre-polymer and liquid crystal by x-ray measurements. We believe that technology of PSCOF is a good solution to solve the problems of align-defect and mechanical shock for future TV application and plastic LCD.

• Journal of the Korean Ceramic Society
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• v.28 no.6
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• pp.495-501
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• 1991

This study is intended to make defect-free region, denuded zone at the silicon wafer surface for semiconductor device substrates. In this experiment, initial oxygen concentration of starting material CZ-grown silicon wafer, various heat treatment combinations, denuding ambient and the amounts of oxygen reduction were measured, and then denuded zone (DZ) formation and depth were investigated. In Low/High anneal (DZ formation could be achieved), the optimum temperature for Low anneal was 700$^{\circ}C$∼750$^{\circ}C$. In case of High anneal, with the time increased, DZ depth was increased at 1000$^{\circ}C$, 1150$^{\circ}C$ respectively, but on the contrary, DZ depth was decreased at low temperature 900$^{\circ}C$. As well, out-diffusion time below 2 hours was unsuitable for effective Gettering technique even though the temperature was high, and DZ formation could be achieved when initial oxygen concentration was only above 14 ppm in silicon wafer.

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.128-135
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• 1998

The paper gives a brief introduction to protonic defects and their chemistry, thermodynamics and transport in oxides. The temperature dependence of the equilibrium concentration of protons is illustrated and compared for different acceptor-doped oxides. The difficulties of saturating as well as emptying the oxides of protons are discussed. In order to illustrate the possibility of lattice relaxation of defects, a conceptual study is made of a case where the enthalpy of dissolution of protons(water) at the cost of oxygen vacancies is assumed dependent on the concentration of vacancies. It is shown how this changes the behavior of hydration curves vs temperature and water vapour pressure. finally, a discussion is given on the water uptake in heavily oxygen deficient oxides; how water uptake may affect order-disorder in the oxygen sublattice and eventually lead to defective, disordered or ordered oxyhydroxides or hydroxides of potential interest as intermediate temperature proton conductions.

• Journal of the Korean Ceramic Society
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• v.35 no.12
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• pp.1323-1328
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• 1998

The electrical conductivities of the yttria (8mol%) stabilizedzirconia-ceria solid solutions were measured as a function of oxygen partial between 80$0^{\circ}C$ and 100$0^{\circ}C$ using 4-probe d.c. method Under pure oxygen atmosphere the oxygen ionic conductivity of CeO2-ZrO2 decreased with the concentration of CeO2 Under reducing condition electronic conduction due to the redox equilibrium of Ce ion was observed. Total ionic and electronic conductivities fitted by a defect model enabled to determine the electronic transference number(tei) which increased with the concentration of CeO2 and with the degree of reduction.

• Journal of the Korean institute of surface engineering
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• v.28 no.3
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• pp.174-181
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• 1995

Multilayered silicon cantilever beams as interconnection systems for bare chip burn-in socket applications have been designed, fabricated and characterized. Fabrication processes of the beam are employing standard semiconductor processes such as thin film processes and epitaxial layer growth and silicon wet etching techniques. We investigated silicon etch rate in 1-3-10 etchant as functions of doping concentration, surface mechanical stress and crystal defects. The experimental results indicate that silicon etch rate in 1-3-10 etchant is strong functions of doping concentration and crystal defect density rather than surface mechanical stress. We suggested the new fabrication processes of multilayered silicon cantilever beams.

• Journal of Magnetics
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• v.17 no.3
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• pp.163-167
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• 2012

The effects on the ferromagnetism of the O or Zn defect in Cu-doped ZnO with the concentration of 2.77-8.33% have been investigated by the first-principles calculations. The Cu doping in ZnO was calculated to be a kind of p-type ferromagnetic half-metals. When the Zn vacancy exists in Cu-doped ZnO, the Cu magnetic moment increases, while for the O vacancy it is reduced. It is noticeable that the ferromagnetic state was originated from the hybridized O(2p)-Cu(3d)-O(2p) chain formed through the p-d coupling. The carrier-mediated ferromagnetism by nitrogen or fluorine does not depend on their concentration.