• Journal of the Korean Vacuum Society
• /
• v.13 no.3
• /
• pp.109-113
• /
• 2004

Zn diffusions in InP have been studied by electrochemical capacitance voltage. The InP layer was grown by metal organic chemical vapor deposition, and $Zn_3P_2$ thin film was deposited on the epitaxial substrates. The samples annealed in a rapid thermal annealing. It is demonstrated that surface hole concentration as high as $1\times10^{19}\textrm{cm}^{-3}$ can be achieved. When the Zn diffusion was carried at $550^{\circ}C$ and 5-20 min., the diffusion depth of hole concentration moves from 1.51$\mu\textrm{m}$ to 3.23 $\mu\textrm{m}$, and the diffusion coeffcient of Zn is $5.4\times10^{-11}\textrm{cm}^2$/sec. After activation, the concentration is two orders higher than that of untreated sample at 0.30 $\mu\textrm{m}$ depth. As the annealing time is increase, the hole concentration remains almost constant, except deep depth. It means that excess Zn interstitials exist in the doped region is rapidly diffusion into the undoped region and convert into substitutional When the thickness of $SiO_2$ thin film is above 1,000$\AA$, the hole concentration becomes stable distribution.

• Korean Journal of Materials Research
• /
• v.16 no.4
• /
• pp.231-234
• /
• 2006

To obtain balanced white-emission and high efficiency of the organic light-emitting diodes (OLEDs), a deep blue emitter made of N,N'-diphenyl-N,N'-bis(1-naphthyl)- (1,1'-biphenyl)-4,4'-diamine (NPB) emitter and a new red emitter made of the Bis(2,4 -dimethyl-8-quinolinolato)(triphenylsilanolato)aluminum(III) (24MeSAlq) doped with red fluorescent 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H -pyran (DCJTB) were used and the device was tuned by varying the thickness of the DCJTB-doped 24MeSAlq and $Alq_3$. For the white OLED with 10 nm thickness DCJTB (0.5%) doped 24MeSAlq and 45 nm thick $Alq_3$, the maximum luminance of about 29,700 $Cd/m^2$ could be obtained at 14.8 V. Also, Commission Internationale d'Eclairage (CIE) chromaticity coordinates of (0.32, 0.28) at about 100 $Cd/m^2$, which is very close to white light equi-energy point (0.33, 0.33), could be obtained.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.8 no.3
• /
• pp.244-250
• /
• 2008

An inductively coupled plasma etching process to replace an existing slower rate reactive ion etching process for $60{\mu}m$ diameter via-holes using Cl2/BCl3 gases has been investigated. Process pressure and platen power were varied at a constant ICP coil power to reproduce the RIE etched $200{\mu}m$ deep via profile, at high etch rate. Desired etch profile was obtained at 40 m Torr pressure, 950 W coil power, 90W platen power with an etch rate ${\sim}4{\mu}m$/min and via etch yield >90% over a 3-inch wafer, using $24{\mu}m$ thick photoresist mask. The etch uniformity and reproducibility obtained for the process were better than 4%. The metallized via-hole dc resistance measured was ${\sim}0.5{\Omega}$ and via inductance value measured was $\sim$83 pH.

• Transactions on Electrical and Electronic Materials
• /
• v.11 no.1
• /
• pp.37-41
• /
• 2010

The authors investigated the photoluminescence (PL) and the electron paramagnetic resonance (EPR) from an magnesium (Mg)-doped GaN thin film with a delta-doped layer. The regularly doped sample shows a PL peak at 2.776 eV for the as-grown sample, and the peak shifts to 2.904 eV and increases in intensity for the annealed sample. The delta-doped sample also shows the same PL peak as does the regularly doped sample. However, only the annealed delta-doped layer shows a sharp EPR with a small isotropic Lande g-factor, $g_{II}$, of 2.029. This resonance is attributed to the delta-doped layer, which forms a hole-bound Mg-N atomic structure instead of the $Mg_{Ga}-V_N$ defect complex, indicating that the delta-doped sample was not optically activated to form PL centers but was instead electrically activated to form a hole-bound state.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 1995.10a
• /
• pp.105-108
• /
• 1995

So far,in deep drilling process there are several manufacturing problems such as hole deviation, hole over size, circularity,straightness and surface roughness. Whit regard to these problems, we atudied the abrasion process on carbided tip of BTA drill and got the follow test results through the abrasion characteristic test and analysis on cutting mechanism for the drill tooth and guide pad. 1) In SM55C drilling process, the most stable and reasonable drilling speed range for optmum abrasion characteristic of drill tooth was 60m.min. 2) The total drilling torque was about 60kg .deg.cm on condition drilling speed 60m/min and 0.15mm/rev. These results show that the theoretical burnising torque is well accord with the tested torque which is working on guide pad.

• Journal of the Microelectronics and Packaging Society
• /
• v.21 no.2
• /
• pp.53-57
• /
• 2014

Thin glass (< 100 microns) is a promising material from which advanced interposers for high density electrical interconnects for 2.5D chip packaging can be produced. But thin glass is extremely brittle, so mechanical micromachining to create through glass vias (TGVs) is particularly challenging. In this article we show how laser processing using deep UV excimer lasers at a wavelength of 193 nm provides a viable solution capable of drilling dense patterns of TGVs with high hole counts. Based on mask illumination, this method supports parallel drilling of up over 1,000 through vias in 30 to $100{\mu}m$ thin glass sheets. (We also briefly discuss that ultrafast lasers are an excellent alternative for laser drilling of TGVs at lower pattern densities.) We present data showing that this process can deliver the requisite hole quality and can readily achieve future-proof TGV diameters as small $10{\mu}m$ together with a corresponding reduction in pitch size.

• Laser Solutions
• /
• v.12 no.1
• /
• pp.14-18
• /
• 2009

Ripple formation of femtosecond laser in stainless steel is investigated using 184 fs pulses with a center wavelength of 785 nm. The effect of the laser polarization relative to the translation direction is observed. For drilling with a certain aspect ratio, reflections at the hole walls take place, leading to a non-uniform intensity distribution deep inside the formed hole. Finally, it is shown that a circular polarization during the drilling process significantly improves the quality of the produced holes.

• Journal of the Korean Society of Manufacturing Technology Engineers
• /
• v.5 no.4
• /
• pp.98-107
• /
• 1996

In order to predict analytically torque, thrust force, tool life and chip formation in drilling, cutting models for chisel edge with various tool-chip contact length were developed in this type. Also, the experimental tests are run with various pilot holes. The following conclusions were obtained from the analysis. \circled1 It's also found experimentally that thrust force(Fz) decreases as pilot hole diameter increases. \circled2 Surface roughness for material(G) is larger that for material(J). The difference over two materials in roughness value about 0.5$mu extrm{m}$. \circled3 Flank wear of the drill in cutting material of G less than any other kinds of materials(F, G, H, I, J). \circled4 In drilling a deep hole on a workpiece over SM45C either twist drill. The chip was conical helix type at the fist suspensely change the two segment type and than two a long pitch helix style.

• Journal of Ocean Engineering and Technology
• /
• v.13 no.1 s.31
• /
• pp.70-78
• /
• 1999

오늘날 기계공업 현장에서 심공드릴가공은 광범위한 응용과 양호한 생산성으로 인하여 그 요구가 증가 되고 있다. 그러므로, 본 연구는 난삭재인 SKD11고합금공구강을 여러가지 절삭조건하에서 BTA드릴가공하여 얻은 실험결과(표면조도, 진직도, 진원도, 원통도, 구멍확대량, 등)를 다루었으며 이들의 이론적 배경과 실험을 비교 분석하였다. 프레스금형 부품과 기계부품으로 사용되고 있는 SKD11고합금공구강은 기계가공이 힘든 난삭재료로서 그 어려움이 크므로 본 연구는 생산현장에 보다 나은 심공드릴가공결과와 관련 지식을 제공 할수 있다고 사료된다.

• The Bulletin of The Korean Astronomical Society
• /
• v.36 no.1
• /
• pp.48.2-48.2
• /
• 2011

Using the newly commissioned Fiber-Multi-Object-Spectrograph at the Subaru telescope, we obtained near-IR spectra of a sample of 19 AGNs at 0.6 < z < 2.6, selected from the NOAO Deep Wide-Field Survey (NDWFS) Bootes field, in order to calibrate high-z black hole mass (MBH) estimators. MBHs are generally determined through the kinematics of ionized gas clouds around the black hole assuming virial equilibrium. The velocity profiles of $H{\beta}/H{\alpha}$, MgII and CIV are used to infer the gas kinematics of low-z, mid-z, and high-z quasars, respectively. However, the MBH based on MgII and CIV is not very well calibrated. We compare the $H{\alpha}$ - based MBH estimates from the new FMOS near-IR spectra, with the MgII-based MBH estimates from our existing optical spectra, and investigate the systematic differences.