• 대한금속재료학회지
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• 제50권2호
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• pp.152-158
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• 2012

The effect of current waveform on Cu filling into TSV (through-silicon via) and the bottom-up ratio of Cu were investigated for three dimensional (3D) Si chip stacking. The TSV was prepared on an Si wafer by DRIE (deep reactive ion etching); and its diameter and depth were 30 and $60{\mu}m$, respectively. $SiO_2$, Ti and Au layers were coated as functional layers on the via wall. The current waveform was varied like a pulse, PPR (periodic pulse reverse) and 3-step PPR. As experimental results, the bottom-up ratio by the pulsed current decreased with increasing current density, and showed a value of 0.38 on average. The bottom-up ratio by the PPR current showed a value of 1.4 at a current density of $-5.85mA/cm^2$, and a value of 0.91 on average. The bottom-up ratio by the 3-step PPR current increased from 1.73 to 5.88 with time. The Cu filling by the 3-step PPR demonstrated a typical bottom-up filling, and gave a sound filling in a short time.

• 대한금속재료학회지
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• 제49권5호
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• pp.388-394
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• 2011

High speed copper filling into TSV (through-silicon-via) for three dimensional stacking of Si chips was investigated. For this study, a tapered via was prepared on a Si wafer by the DRIE (deep reactive ion etching) process. The via had a diameter of 37${\mu}m$ at the via opening, and 32${\mu}m$ at the via bottom, respectively and a depth of 70${\mu}m$. $SiO_2$, Ti, and Au layers were coated as functional layers on the via wall. In order to increase the filling ratio of Cu into the via, a PPR (periodic pulse reverse) wave current was applied to the Si chip during electroplating, and a PR (pulse reverse) wave current was applied for comparison. After Cu filling, the cross sections of the vias was observed by FE-SEM (field emission scanning electron microscopy). The experimental results show that the tapered via was filled to 100% at -5.85 mA/$cm^2$ for 60 min of plating by PPR wave current. The filling ratio into the tapered via by the PPR current was 2.5 times higher than that of a straight via by PR current. The tapered via by the PPR electroplating process was confirmed to be effective to fill the TSV in a short time.

• Corrosion Science and Technology
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• 제9권6호
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• pp.276-280
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• 2010

Copper(Cu) as an interconnecting metal layer can replace aluminum (Al) in IC fabrication since Cu has low electrical resistivity, showing high immunity to electromigration compared to Al. However, it is very difficult for copper to be patterned by the dry etching processes. The chemical mechanical polishing (CMP) process has been introduced and widely used as the mainstream patterning technique for Cu in the fabrication of deep submicron integrated circuits in light of its capability to reduce surface roughness. But this process leaves a large amount of residues on the wafer surface, which must be removed by the post-CMP cleaning processes. Copper corrosion is one of the critical issues for the copper metallization process. Thus, in order to understand the copper corrosion problems in post-CMP cleaning solutions and study the effects of DC biases and post-CMP cleaning solution concentrations on the Cu film, a constant voltage was supplied at various concentrations, and then the output currents were measured and recorded with time. Most of the cases, the current was steadily decreased (i.e. resistance was increased by the oxidation). In the lowest concentration case only, the current was steadily increased with the scarce fluctuations. The higher the constant supplied DC voltage values, the higher the initial output current and the saturated current values. However the time to be taken for it to be saturated was almost the same for all the DC supplied voltage values. It was indicated that the oxide formation was not dependent on the supplied voltage values and 1 V was more than enough to form the oxide. With applied voltages lower than 3 V combined with any concentration, the perforation through the oxide film rarely took place due to the insufficient driving force (voltage) and the copper oxidation ceased. However, with the voltage higher than 3 V, the copper ions were started to diffuse out through the oxide film and thus made pores to be formed on the oxide surface, causing the current to increase and a part of the exposed copper film inside the pores gets back to be oxidized and the rest of it was remained without any further oxidation, causing the current back to decrease a little bit. With increasing the applied DC bias value, the shorter time to be taken for copper ions to be diffused out through the copper oxide film. From the discussions above, it could be concluded that the oxide film was formed and grown by the copper ion diffusion first and then the reaction with any oxidant in the post-CMP cleaning solution.

• 대한소아치과학회지
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• 제36권1호
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• pp.30-37
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• 2009

초기 법랑질 우식은 환자의 구강 위생 증진 및 국소적 불소 도포를 통해 재광화가 가능하나 이는 환자의 협조도에 전적으로 의존하게 되어 있어 임상적 효과를 확신하기 힘들다. 그 대안으로 병소 진행의 보다 초기 단계에 병소의 미세 다공구조를 광중합 레진으로 전색하는 시도가 행해져 오고 있다. 그러나 법랑질 초기 우식의 표층은 병소 본체에 비해 상대적으로 낮은 세공 용적으로 인하여 접착레진의 침투를 방해할 수 있다. 따라서 적절한 표면 처리를 통한 표층의 일부 혹은 전체의 제거가 접착레진의 침투에 중요하다. 그러나 아직까지 자연적인 법랑질 초기 우식 병소의 표면 처리에 관한 연구는 부족한 실정이다. 이에 본 연구에서는 평활면 법랑질 초기 우식에 대한 접착레진 적용 전 적절한 표면 처리 방법을 알아보고자 시행되었다. 인접면에 법랑질 초기 우식을 보이는 39개의 발거된 유구치를 각기 다른 방법의 표면처리를 시행한 바, 수세만 시행한 대조군인 1군, 15초간 15% 염산 처리한 2군, 15초간 35% 인산 처리한 3군, 30초간 35% 인산 처리한 4군, 0.5% 차아염소산나트륨으로 세척한 5군의 5개 군으로 이루어졌다. 각 군당 3개의 치아는 주사전자현미경으로 관찰하고, 나머지 24개에는 접착레진을 도포하고 그 절단 시편을 공초점 레이저 주사현미경으로 관찰하여 다음과 같은 결론을 얻었다. 1. 주사전자현미경 관찰 결과, 2군에서 가장 명백한 표층 제거가 관찰되었고, 3군과 4군에서는 일부 불규칙적인 표층 제거, 5군에서는 미약한 표층 제거가 나타났다. 2. 각 군의 평균 침투 깊이는 $6.85{\sim}23.09{\mu}m$로 측정되었으며, 침투 깊이의 군간 비교에서는 2군에서 가장 크게, 이어 4군, 3군, 5군, 1군의 순이었으며, 5군을 제외한 모든 실험군에서는 대조군에 비해 크게 나타났다. (p<0.01)