• JSTS:Journal of Semiconductor Technology and Science
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• 제7권3호
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.459-459
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• 2009

태양전지 모듈은 다양한 환경에 노출 되지만 그중에서도 고온의 상태는 태양전지 모듈의 출력 특성에 심각한 영향을 미친다. 본 논문에서는 그와 같은 환경변화 실험의 일환으로 고온의 태양전지 모듈을 외부환경에 노출되었을 때 dark 전류의 변화를 관찰함으로써 최적의 설치 환경에 관한 자료로써 이용 될 수 있을 뿐만 아니라 설치이후 외부 환경 온도 변화에 의한 출력 감소를 예측할 수 있을 것이다.

• Journal of Microbiology and Biotechnology
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• 제22권11호
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• pp.1471-1477
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• 2012

Carotenoids produced by non-photosynthetic bacteria protect organisms against lethal photodynamic reactions and scavenge oxygenic radicals. However, the carotenoid produced by Gordonia alkanivorans SKF120101 is coupled to reducing power generation. SKF120101 selectively produces carotenoid under light conditions. The growth yield of SKF120101 cultivated under light conditions was higher than that under dark condition. In the cyclic voltammetry, both upper and lower voltammograms for neutral red (NR) immobilized in intact cells of SKF120101 were not shifted in the condition without external redox sources but were commonly shifted downward by glucose addition and light. Electric current generation in a biofuel cell system (BFCS) catalyzed by harvested cells of SKF120101 was higher under light than dark condition. The ratio of electricity generation to glucose consumption by SKF120101 cultivated in BFCS was higher under light than dark condition. The carotenoid produced by SKF120101 catalyzes production of reducing power from light energy, first evaluated by the electrochemical technique used in this research.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.435-437
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• 1995

It is important to understand tile behaviours of tile high pressure DC glow discharge with a micro gap inside a pixel of the plasmas display panel. We prepared a narrow gap discharge system and have measured electron temperature and density by means of double probe methods in high pressure which was between 100torr and 200torr. And the electrode gap was 7mm. When the pressure varied from 100torr to 200torr, the negative glow was created at a distance less than 1mm from the cathode. And the length of the faraday dark space decreased from 8mm to 5mm. Hence probe measurements was mainly, performed in the region of the Faraday dark space. The dependence of electron temperature and density on the pressure and current density was same with that of the general flow discharge, i.e. as the pressure increased the electron temperature decreased and the density increased. But the spatial electron density distribution in the Faraday dark space was highly distorted because of the effect of high pressure.

• Journal of Information Processing Systems
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• 제19권4호
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• pp.417-426
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• 2023

To improve the effect of image restoration and solve the image detail loss, an image dehazing enhancement algorithm based on mean guided filtering is proposed. The superpixel calculation method is used to pre-segment the original foggy image to obtain different sub-regions. The Ncut algorithm is used to segment the original image, and it outputs the segmented image until there is no more region merging in the image. By means of the mean-guided filtering method, the minimum value is selected as the value of the current pixel point in the local small block of the dark image, and the dark primary color image is obtained, and its transmittance is calculated to obtain the image edge detection result. According to the prior law of dark channel, a classic image dehazing enhancement model is established, and the model is combined with a median filter with low computational complexity to denoise the image in real time and maintain the jump of the mutation area to achieve image dehazing enhancement. The experimental results show that the image dehazing and enhancement effect of the proposed algorithm has obvious advantages, can retain a large amount of image detail information, and the values of information entropy, peak signal-to-noise ratio, and structural similarity are high. The research innovatively combines a variety of methods to achieve image dehazing and improve the quality effect. Through segmentation, filtering, denoising and other operations, the image quality is effectively improved, which provides an important reference for the improvement of image processing technology.

• 한국재료학회지
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• 제28권10호
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• pp.564-569
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• 2018

$Cu_2ZnSn(S,Se)_4$ (CZTSSe) films were prepared on Mo coated soda lime glass substrates by sulfo-selenization of sputtered stacked Zn-Sn-Cu(CZT) precursor films. The precursor was dried in a capped state with aqueous NaOH solution. The CZT precursor films were sulfo-selenized in the S + Se vapor atmosphere. Sodium was doped during the sulfo-selenization treatment. The effect of sodium doping on the structural and electrical properties of the CZTSSe thin films were studied using FE-SEM(field-emission scanning electron microscopy), XRD(X-ray diffraction), XRF(X-ray fluorescence spectroscopy), dark current, SIMS(secondary ion mass spectrometry), conversion efficiency. The XRD, XRF, FE-SEM, Dark current, SIMS and cell efficiency results indicated that the properties of sulfo-selenized CZTSSe thin films were strongly related to the sodium doping. Further detailed analysis and discussion for effect of sodium doping on the properties CZTSSe thin films will be discussed.

• 한국진공학회지
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• 제4권S1호
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• pp.168-173
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• 1995

$GaxIn{1_x}As$ epitaxial layers were grown by a simplified hydrode vapor phase epitaxy(VPE) method bsed on the utilization of Ga/In alloy as the source metal. The effects of a wide range of experimental variables(i.e.,inlet mole fraction of HCI, deposition temperature, Ga/In alloy composition) on the ternary composition and growth rate were investigated. Layers of $Ga_{0.47}In_{0.53}As$ lattice matched to InP were successfully grown from alloys containing 5 to 8 at.% Ga. These layers were used to produce state-of-the art p-i-n photodetectors having the following characteristics: dark current, $I_d$(-5V) = 10-20 nA: responsivity, R=0.84-0.86 A/W; dark current, Id(-5V)=10-20 nA; responsivity, R=0.84-0.86 A/W; capacitance, C=0.88-0.92 pF; breakdown voltage, $V_b$ >40V. This study demonstrated for the first time that a simplified hydride VPE process with a Ga/In alloy source is capable of producing device quality epitaxial layers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.121-121
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• 2008

We propose a novel nanomaterial-based pn diode which constructed with an n-type ZnO nanowire (NW) and a p-type HgTe nanoparticle (NP) thin film. The photo current characteristics of a ZnO NW, a HgTe NP thin film and pn diode constructed with a ZnO NW and a HgTe NP thin film were investigated under illumination of the 325 nm and 633 nm wavelength light. The conductivities of a ZnO NW exposed to the 325 nm and 633 nm wavelength light increased, while the photocurrents taken from the HgTe NP thin film was very close to the dark currents. Moreover, The pn diode exhibited the rectifying characteristics of the dark current and of the photocurrent excited by the 633 nm wavelength light. In contrast, the ohmic characteristics for the photocurrent were observed due to the junction barrier lowering in the conduction band of the ZnO nanowire under the illumination of the 325 nm wavelength light.

• 천문학회보
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• 제42권1호
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• pp.29.4-30
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• 2017

Korea Astronomy and Space Science Institute We present a weak-lensing study of the galaxy cluster SPT-CL J2106-5844 at z=1.132 discovered in the South Pole Telescope Sunyaev-Zel'dovich (SPT-SZ) survey. The cluster is claimed to be the most massive system at z > 1 in the SPT-SZ survey. The inferred mass ($M_{200c}=(1.27{\pm}0.21){\times}10^{15}M_{sun}$) is somewhat unusual at such a high redshift given the current ΛCDM prediction. The mass estimates, however, may be biased because the hydrostatic assumption may not hold when the universe was about 40% of the current age. In this work, we reconstruct the dark matter distribution and measure the mass of this interesting cluster using weak-lensing analysis based on the images from the Advanced Camera for Surveys and Wide Field Camera 3 on-board the Hubble Space Telescope. We find that the mass distribution of the cluster is unimodal with no significant substructures. The centroid of the dark matter agrees with both galaxy luminosity and number density distributions, as well as the hot gas centroid. We confirm that the cluster is indeed extremely massive ($M_{200c}=(1.81{\pm}0.47){\times}10^{15}M_{sun}$) supporting the previous non-lensing measurements. We also discuss the rarity of the cluster in the ΛCDM cosmology, comparing with the expected abundance of similarly massive clusters.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.128.2-128.2
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• 2014

Long-wave infrared detectors using the type-II InAs/GaSb strained superlattice (T2SL) material system with the nBn structure were designed and fabricated. The band gap energy of the T2SL material was calculated as a function of the thickness of the InAs and GaSb layers by the Kronig-Penney model. Growth of the barrier material (Al0.2Ga0.8Sb) incorporated Te doping to reduce the dark current. The full width at half maximum (FWHM) of the 1st satellite superlattice peak from the X-ray diffraction was around 45 arc sec. The cutoff wavelength of the fabricated device was ${\sim}10.2{\mu}m$ (0.12eV) at 80 K while under an applied bias of -1.4V. The measured activation energy of the device was ~0.128 eV. The dark current density was shown to be $1.2{\times}10^{-5}A/cm^2$ at 80 K and with a bias -1.4 V. The responsivity was 1.9 A/W at $7.5{\mu}m$ at 80K and with a bias of -1.9V.