• The Bulletin of The Korean Astronomical Society
• /
• v.44 no.1
• /
• pp.57.1-57.1
• /
• 2019

In support of current and upcoming large-volume cosmological surveys such as the SDSS-IV eBOSS, LSST, and DESI, we present an extensive suite of high-resolution cosmological hydrodynamical simulations spanning a large range of cosmological and astrophysical parameters. We follow the evolution of gas, dark matter, neutrinos, and dark radiation, and consider several combinations of box sizes and number of particles - enhancing the resolution up to $3{\times}33283=110$ billion particles in a (100 h-1 Mpc)3 box size. We also provide 100,000 skewers for a variety of redshift slices and combination of cosmological and astrophysical parameters, useful for interpreting upcoming high-quality $Lyman-{\alpha}$ forest data. These novel simulations represent an improvement over our previous runs, and can be useful for a broader variety of cosmological and astrophysical applications, ranging from the three-dimensional modeling of the $Lyman-{\alpha}$ forest to cross-correlations between different probes, for studying the expansion history of the Universe including massive neutrinos, and for particle-physics related topics.

• Current Optics and Photonics
• /
• v.5 no.1
• /
• pp.40-44
• /
• 2021

In this paper, LED arrays with segmented mirrors and a mask are presented as a new dark-field illuminator for reflective Fourier ptychographic microscopy (FPM). The illuminator can overcome the limitations of the size and the position of samples that the dark-field illuminator using a parabolic mirror has had. The new concept was demonstrated by measuring a USAF 1951 target, and it resolved a pattern in group 10 element 6 (274 nm) in the USAF target. The new design of the dark-field illuminator can enhance competitiveness of the reflective FPM as a versatile measurement method in industry.

• The Bulletin of The Korean Astronomical Society
• /
• v.44 no.2
• /
• pp.59.2-59.2
• /
• 2019

In this talk, I will explain the implications of a rapid appearance of dark energy between the redshifts ($z$) of one and two on the expansion rate and growth of perturbations. Using both Gaussian process regression and a parametric model, I show that this is the preferred solution to the current set of low-redshift ($z<3$) distance measurements if $H_0=73~\rm km\,s^{-1}\,Mpc^{-1}$ to within 1\% and the high-redshift expansion history is unchanged from the $\Lambda$CDM inference by the Planck satellite. Dark energy was effectively non-existent around $z=2$, but its density is close to the $\Lambda$CDM model value today, with an equation of state greater than $-1$ at $z<0.5$. If sources of clustering other than matter are negligible, we show that this expansion history leads to slower growth of perturbations at $z<1$, compared to $\Lambda$CDM, that is measurable by upcoming surveys and can alleviate the $\sigma_8$ tension between the Planck CMB temperature and low-redshift probes of the large-scale structure.

• Journal of Biomedical Engineering Research
• /
• v.28 no.6
• /
• pp.756-767
• /
• 2007

For the combination of phosphor screens having various thicknesses and a photodiode array manufactured by complementary metal-oxide-semiconductor (CMOS) process, we report the observation of image-quality degradation under the irradiation of 45-kVp spectrum x rays. The image quality was assessed in terms of dark pixel signal, dynamic range, modulation-transfer function (MTF), noise-power spectrum (NPS), and detective quantum efficiency (DQE). For the accumulation of the absorbed dose, the radiation-induced increase both in dark signal and noise resulted in the gradual reduction in dynamic range. While the MTF was only slightly affected by the total ionizing dose, the noise power in the case of $Min-R^{TM}$ screen, which is the thinnest one among the considered screens in this study, became larger as the total dose was increased. This is caused by incomplete correction of the dark current fixed-pattern noise. In addition, the increase tendency in NPS was independent of the spatial frequency. For the cascaded model analysis, the additional noise source is from direct absorption of x-ray photons. The change in NPS with respect to the total dose degrades the DQE. However, with carefully updated and applied correction, we can overcome the detrimental effects of increased dark current on NPS and DQE. This study gives an initial motivation that the periodic monitoring of the image-quality degradation is an important issue for the long-term and healthy use of digital x-ray imaging detectors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.72-72
• /
• 2009

본 연구에서는 Photoconductor materials 기반의 평판형 X-ray Detector film 제작에 관한 연구를 수행하였다. 기존의 광도전성 물질로 사용되어 오던 비정질 셀레늄(Amorphous seleinum; a-Se) 기반의 디지털 방사선 검출기 보다 높은 신호 및 동작 특성을 가지는 Mercury Iodide(HgI2)와 열적, 전기적 특성이 안정적이며, 소자의 동작특성이 우수한 Lead Oxide(PbO) 기반의 X-ray Detector film의 개발에 있어서 각각 HgI2 및 PbO 두 물질 층을 적정비율에 맞추어 제작함으로써 최적의 X-ray Detector를 구현하고자 하였다. 이는 빠른 영상획득을 통해 기존의 방식이 가지는 문제점을 해결하고 의료기기 디지털화를 구현할 수 있는 차세대 시스템을 개발하고자 하는 것이다. 본 연구에서는 기존의 진공증착법의 두꺼운 대면적 필름의 제조가 어려운 문제점을 해결하고자 Particle In Binder method(PIB) 방법을 이용하여 $3"{\times}3"$사이즈의 두께 $200{\mu}m$의 다결정의 Photoconductor 필름을 제조하여 전기적 특성을 평가하였다. 제작된 필름의 전기적 특성을 dark current, X-선 sensitivity와 SNR(Signal to -Noise Rate) 등을 측정하여 정량적으로 평가 하였다. 기준 실험으로 진행한 DG 2.1 바인더를 사용한 single-HgI2 층에서 보다 높은 sensitivity 값을 보였지만 높은 dark current로 인해 SNR이 떨어지는 결과를 볼 수 있었다. 본 연구에서 제시하는 두 Photoconductor material의 Soaking method를 이용한 실험에서는 single-HgI2에 해당하는 높은 sensitivity 및 저감된 dark current로 인해 높은 SNR 값을 획득하였다. 하지만 습도와 같은 주변 환경에 의한 재현성 문제로 인한 신호값의 불안정성에 대한 문제점도 남아 있으므로, 차후 최적화된 material 제작 공정을 위한 연구가 꾸준히 진행 되어져야 할 것이다.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.26 no.6
• /
• pp.48-56
• /
• 1989

Contact-type linear image sensors for facsimile have been fabricated by means of rf glow discharge decomposition method of silane. The dependence of their electrical and optical properties on rf power, $SiH_4$ flow rate, ambient gas pressure, $H_2SiH_4$ ratio and substrate temperature are described. The a-Si:H monolayer demonstriated photosensitivity of 0.85 and $I_{ph}/I_d$ ratio of 100 unger 100 lux illumination. However, this monolayer has relatively high dark current due to carrier injection from both electrodes, resulting in low $I_{ph}/I_{dd}$ ratio. To suppress the dark current we have fabricated $SiO_2/i-a-Si:H/p-a-Si:H:B$ multilayer film with blocking structure. The photocurrent of this multilayer sensor with 6 V bias became saturated ar about 20nA under 10 lux illumination, while the dark current was less than 0.2 nA. Moreover, the spectral sensitivity of the multilayer film was enhanced for short wavelength visible region, compared with that of the a-Si:H monolayer. These results show that the fabricated photocon-ductive film can be used as the linear image sensor of the facsimile.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.84-87
• /
• 2003

HgTe quantum dots(QDs) were synthesized in aqueous solution by colloidal method. The absorption and photoluminescence(PL) spectrum of the synthesized HgTe QDs revealed the strong exitonic peak in the IR region. And the photocurrent measurement of colloidal QDs are performed using IR light source. The lineshape of the wavelength dependent intensity of photocurrent was very similar to the absorption spectrum, indicating the charges generated by the absorption of photons give direct contribution to photocurrent. The channels of dark current are supposed $H_2O$ containing in thiol by the remarkable drop of current at the state of vacuum. It was thought that the proper passivation layer on the top of HgTe film reduce the dark current and the adequate choice of capping material improves the efficiency of the photocurrent in the HgTe QDs. This study suggests that HgTe QDs are very prospective materials for optoelectronics including photodetectors in the IR range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11b
• /
• pp.497-500
• /
• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e.g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current. 缀Ѐ㘰〻ሀ䝥湥牡氠瑥捨湯汯杹

• Bulletin of the Korea Photovoltaic Society
• /
• v.4 no.2
• /
• pp.14-24
• /
• 2018

The potential induced degradation (PID) phenomenon of crystalline silicon photovoltaic (PV) modules has been often found in outdoor PV systems until recently since firstly reported in 2010. Many studies have been conducted about the mechanism and the preventive methods, but systematic diagnosis of the PID has not been applied on-site. This paper focuses on analysis of 5 categories and 10 PID diagnosis methods using the monitoring data, light current-voltage, dark current-voltage, infrared and electroluminescence. We expect to contribute to improvement of power generation through PID diagnosis and troubleshooting in PV plants.

• Journal of radiological science and technology
• /
• v.33 no.3
• /
• pp.289-294
• /
• 2010

The purpose of this study is an evaluation of the performance of a detector under radiographic irradiation condition by fabricating the polycrystalline $HgI_2$ film detector. The polycrystalline $HgI_2$ film detectors with thickness of 210 and $320\;{\mu}m$ were fabricated by screen print technology. Measurements of X-ray sensitivity and dark current were performed for two detectors. And measurements of the linearity of X-ray response and reproducibility were performed for the detector of thickness $320\;{\mu}m$. For applied electric field strengths from 0.05 to $2\;V/{\mu}m$ to the detector of thickness $320\;{\mu}m$, the X-ray sensitivities were measured from 233 to $1,408{\times}106\;electrons/mR{\cdot}mm^2$. And the dark currents were measured from 3.2 to $118\;pA/mm^2$. Compared with values reported by Zhong Su et al., the X-ray sensitivities exhibit about two times larger than the X-ray sensitivities measured by Zhong Su et al. And the dark currents exhibit about nine times larger than the dark currents measured by Zhong Su et al. The linearity of X-ray response acquired 0.988 as a coefficient of correlation (r). Reproducibility acquired 0.002 as a coefficient of variation. This study provides the performance data of fabricated polycrystalline $HgI_2$ film detector available for an active matrix flat panel imager under radiographic irradiation condition.